Semiconductor device and production method thereof

Abstract

A method of producing a semiconductor device, comprising: a first plasma processing step of processing a surface of a resin layer laid on a semiconductor element and containing silicon, with a first plasma generated from a gas containing oxygen and fluorine, thereby forming an oxide film; and an electrode pad forming step of forming an electrode pad of a metal on the oxide film.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view schematically showing a semiconductor device according to the first embodiment.

FIG. 2 is a sectional view along line II-II shown in FIG. 1.

FIGS. 3A to 3C are sectional step diagrams schematically showing a production method of the semiconductor device according to the first embodiment.

FIGS. 4A to 4C are sectional step diagrams schematically showing the production method of the semiconductor device according to the first embodiment.

FIG. 5 is a plan view schematically showing a semiconductor device according to the second embodiment.

FIG. 6 is a sectional view along line VI-VI shown in FIG. 5.

Claims

1. A method of producing a semiconductor device, comprising: a first plasma processing step of processing a surface of a resin layer laid on a semiconductor element and containing silicon, with a first plasma generated from a gas containing oxygen and fluorine, thereby forming an oxide film; andan electrode pad forming step of forming an electrode pad of a metal on the oxide film.

2. The method according to claim 1, further comprising a second plasma processing step of processing a surface of the oxide film with a second plasma generated from an inert gas, between the first plasma processing step and the electrode pad forming step.

3. The method according to claim 1, wherein the electrode pad is comprised of titanium.

4. The method according to claim 1, wherein the semiconductor element is a semiconductor optical element.

5. A semiconductor device comprising: a semiconductor element;a resin layer laid on the semiconductor element and containing silicon;an oxide film laid on the resin layer and containing silicon; andan electrode pad laid on the oxide film and containing a metal.