The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which:
The present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. The invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to one skilled in the art.
Referring to
A sealant 124 seals the semiconductor package 100 so that only the circuit surface of the semiconductor chip 136, which is exposed by the slit, and a part of the wire 130 may be sealed. In other words, unlike the conventional package, in the semiconductor package 100 of the present invention, a portion of the wire 130 may be exposed outside of the sealant 124. Solder balls 110 are attached to a lower surface of the circuit substrate 128. A lid 140 may be formed on an upper part of the semiconductor chip 136 to protect the semiconductor chip 136 and improve the reliability of the semiconductor package 100.
The semiconductor package 100 is formed so that the sealant 124, having a high modulus in the range of 1.3 to 10 MPa, may cover only a ball bond, which is a connecting portion of the wire 130 and the semiconductor chip 136, and a stitch bond, which is a connecting portion of the wire 130 and the substrate wire 122. Since the wire 130 is only partially covered by the sealant 124, the stress on the wire 130 generated by a coefficient of thermal expansion (CTE) difference between the wire 130 and the sealant 124 is reduced. Simultaneously, the sealant 124, which is formed to partially cover the wire 130 while having a high modulus, prevents a defect such as warping of the semiconductor package 100. Accordingly, severing of the wire 130, which is caused by thermal expansion occurring when a material having a modulus less than 1.3 MPa is used as the sealant 124, can be prevented. In addition, the warping of the semiconductor package 100, which is caused by a stress occurring when a material having a modulus greater than about 1.3 MPa is used as the sealant 124, can be prevented.
When the sealant 124 covers the ball bond, the sealant 124 may partially cover the wire 130 to a thickness in the range of about 5 to about 50 μm, which is effective to prevent the wire from severing. The sealant 124 may cover the stitch bond to a thickness so that the sealant 124 may completely cover the stitch bond.
Since the sealant 124 partially covers a part of the wire 130, the wire 130 may be coated with an antioxidant which prevents oxidation of the exposed part of the wire 130.
Also, it is understood by one of ordinary skill in the art that the circuit surface of the semiconductor chip 136 may face the lid 140. In this case, a through via is formed in the semiconductor chip 136 and then the pad 134 may be formed corresponding to the semiconductor chip 136 of
Referring to
The semiconductor package 200 includes a semiconductor chip 136, wires 130, a sealant 124 and solder balls 110. The semiconductor chip 136 is attached to the circuit substrate 128 using an adhesive member 132 so that a circuit surface of the semiconductor chip 136, to which pads 134 are attached, may face the circuit substrate 128. The wires 130 electrically connect the pads 134 on the circuit surface of the semiconductor chip 136 to the substrate wire 122 through the slits of the circuit substrate 128. The sealant 124 covers only the circuit surface of the semiconductor chip 136 exposed by the slits and a part of the wires 130, for example, only a ball bond and a stitch bond. The solder balls 110 are attached to a lower surface of the circuit substrate 128.
A lid 140 may be formed on an upper part of the semiconductor chip 136 to protect the semiconductor chip 136 and improve the reliability of the semiconductor package 200. The current embodiment of the present invention is appropriate when, for example, a semiconductor chip having edge pads is applied to a wire ball grid array (WBGA) semiconductor package.
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Also, it is understood by one of ordinary skill in the art that the sealant 124 may be formed by a method including forming the sealant 124 on the entire slit and selectively etching a middle part of the sealant 124.
Referring to
According to some embodiments of the present invention, by forming a sealant only on a part of a wire, wire severing and warping of the semiconductor package can be prevented. In addition, when a stacked type semiconductor package is manufactured, chips of upper and lower packages are attached to each other. Thus, the thickness of the semiconductor package can be reduced.
According to an aspect of the present invention, there is provided a semiconductor package comprising: a circuit substrate having a slit inside the circuit substrate; a semiconductor chip formed on an upper surface of the circuit substrate; a wire connecting the semiconductor chip and the circuit substrate through the slit; and a sealant partially covering the wire.
The part of the wire partially covered with the sealant may be a ball bond which is a connecting portion of the wire and the semiconductor chip.
According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor package, comprising: forming a semiconductor chip on an upper surface of a circuit substrate on which a slit is formed; connecting the semiconductor chip and the circuit substrate through a wire; and sealing only a part of the wire using a sealant.
The sealing only the part of the wire by the sealant may comprise sealing a ball bond which is an adhesive part of the wire and the semiconductor chip by the sealant; and sealing a stitch bond which is an adhesive part of the wire and the circuit substrate by the sealant.
After the attaching of the solder balls on the lower surface of the circuit substrate, the method may further comprise stacking another semiconductor package on the semiconductor package having the same structure as that of the semiconductor package on the circuit substrate.
The stacked semiconductor package may be formed so that the solder balls of the stacked semiconductor package are connected to the upper surface of the circuit substrate of the semiconductor package.
The stacked semiconductor package may be formed so that the stacked semiconductor package is stacked as an inverted structure and each of the semiconductor chips of the stacked semiconductor package and the semiconductor package are connected to each other using an adhesive member.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by one of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims.
Number | Date | Country | Kind |
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10-2006-0101561 | Oct 2006 | KR | national |