1. Field of the Invention
Embodiments of the invention generally relate to an integrated processing system containing multiple processing stations and robots that are capable of processing multiple substrates in parallel.
2. Description of the Related Art
The process of forming electronic devices is commonly done in a multi-chamber processing system (e.g., a cluster tool) that has the capability to sequentially process substrates, (e.g., semiconductor wafers) in a controlled processing environment. A typical cluster tool used to deposit and develop a photoresist material, commonly known as a track lithography tool, will include a mainframe that houses at least one substrate transfer robot which transports substrates between a pod/cassette mounting device and multiple processing chambers that are connected to the mainframe. Cluster tools are often used so that substrates can be processed in a repeatable way in a controlled processing environment. A controlled processing environment has many benefits which include minimizing contamination of the substrate surfaces during transfer and during completion of the various substrate processing steps. Processing in a controlled environment thus reduces the number of generated defects and improves device yield.
The effectiveness of a substrate fabrication process is often measured by two related and important factors, which are device yield and the cost of ownership (CoO). These factors are important since they directly affect the cost to produce an electronic device and thus a device manufacturer's competitiveness in the market place. The CoO, while affected by a number of factors, is greatly affected by the system and chamber throughput, or simply the number of substrates per hour processed using a desired processing sequence.
A process sequence is generally defined as the sequence of device fabrication steps, or process recipe steps, completed in one or more processing chambers in the cluster tool. A process sequence may generally contain various substrate (or wafer) electronic device fabrication processing steps. In an effort to reduce CoO, electronic device manufacturers often spend a large amount of time trying to optimize the process sequence and chamber processing time to achieve the greatest substrate throughput possible given the cluster tool architecture limitations and the chamber processing times.
In track lithography type cluster tools, since the chamber processing times tend to be rather short, e.g., about a minute to complete the process, and the number of processing steps required to complete a typical process sequence is large, a significant portion of the time it takes to complete the processing sequence is taken up transferring the substrates between the various processing chambers. A typical track lithography process sequence will generally include the following steps: depositing one or more uniform photoresist (or resist) layers on the surface of a substrate, then transferring the substrate out of the cluster tool to a separate stepper or scanner tool to pattern the substrate surface by exposing the photoresist layer to a photoresist modifying electromagnetic radiation, and then developing the patterned photoresist layer.
The longest process recipe step will generally limit the throughput of the processing sequence. Sometimes the longest step may be taken by transferring the substrate by a robot, which is generally referred as robot limited. This is usually not the case in track lithography process sequences, due to the short processing times and large number of processing steps. Typical system throughput for the conventional fabrication processes, such as a track lithography tool running a typical process, will generally be between 100-120 substrates per hour.
A track lithography process sequences is generally robot limited due to the short processing times and large number of processing steps. Therefore, reducing transferring time is sometimes an efficient way to increase system throughput and reduce CoO. Transferring time may be decided by several factors, for example the robot trajectory paths in the sequence, and the time spent on collision avoidance. There are generally multiple paths for a robot to move from one point to another point.
Other important factors in the CoO calculation are the system reliability and system uptime. These factors are very important to a cluster tool's profitability and/or usefulness, since the longer the system is unable to process substrates the more money is lost by the user due to the lost opportunity to process substrates in the cluster tool. Therefore, cluster tool users and manufacturers spend a large amount of time trying to develop reliable processes, reliable hardware and reliable systems that have increased uptime.
The push in the industry to shrink the size of semiconductor devices to improve device processing speed and reduce the generation of heat by the device, has caused the industry's tolerance to process variability to diminish. Due to the shrinking size of semiconductor devices and the ever increasing device performance requirements, the allowable variability of the device fabrication process uniformity and repeatability has greatly decreased. To minimize process variability an important factor in the track lithography processing sequences is the issue of assuring that every substrate run through a cluster tool has the same “wafer history.” A substrate's wafer history is generally monitored and controlled by process engineers to assure that all of the device fabrication processing variables that may later affect a device's performance are controlled, so that all substrates in the same batch are always processed the same way. To assure that each substrate has the same “wafer history” requires that each substrate experiences the same repeatable substrate processing steps (e.g., consistent coating process, consistent hard bake process, consistent chill process, etc.) and the timing between the various processing steps is the same for each substrate. Lithography type device fabrication processes can be especially sensitive to variations in process recipe variables and the timing between the recipe steps, which directly affects process variability and ultimately device performance. Therefore, a cluster tool and supporting apparatus capable of performing a process sequence that minimizes process variability and the variability in the timing between process steps is needed. Also, a cluster tool and supporting apparatus that is capable of performing a device fabrication process that delivers a uniform and repeatable process result, while achieving a desired substrate throughput is also needed.
Therefore, there is a need for a system, a method and an apparatus that can process a substrate so that it can meet the required device performance goals and increase the system throughput and thus reduce the process sequence CoO.
The present invention generally provides a cluster tool for processing a substrate. The cluster tool comprises a first module comprises a first processing rack having vertically stacked processing chambers, a second processing rack having vertically stacked processing chambers, wherein the first and second processing racks are positioned substantially parallel to each other, and a first robot disposed between the first and second processing racks, a second module comprises a third processing rack having vertically stacked processing chambers, a fourth processing rack having vertically stacked processing chambers, wherein the third and fourth processing racks are positioned substantially parallel to each other, and a second robot disposed between the third and fourth processing racks, and at least one buffering station, wherein the second module is positioned on one side of the first module such that the first processing rack is next to the third processing rack and the third processing rack is next to the fourth processing rack, and the at least buffering station is disposed in a location where both the first and second robots can reach.
Embodiments of the invention further provide a cluster tool for processing a substrate. The cluster tool comprises a first processing rack containing vertical stacks of substrate processing chambers, a second processing rack containing vertical stacks of substrate processing chambers, a first robot disposed between the first and second processing racks, wherein the first robot is adapted to transfer the substrate among the substrate processing chambers of the first and second processing racks, a second robot disposed between the first and second processing racks, wherein the second robot is adapted to transfer the substrate among the substrate processing chambers of the first and second processing racks, and at least one buffering station disposed between the first and second processing racks and adapted to be accessible by the first and second robots.
Embodiments of the invention further provide a method for processing a substrate in a cluster tool. The method comprises providing a plurality of processing chambers vertically stacked together, providing a first robot configured to transfer substrates among the processing chambers following at least one non-orthogonal trajectory, and handling the substrate by the first robot to transfer the substrate among the processing chambers.
So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
The present invention generally provides an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, and a more repeatable wafer processing history (or wafer history) within the cluster tool. In one embodiment, the cluster tool is adapted to perform a track lithography process in which a substrate is coated with a photosensitive material, is then transferred to a stepper/scanner, which exposes the photosensitive material to some form of radiation to form a pattern in the photosensitive material, and then certain portions of the photosensitive material are removed in a developing process completed in the cluster tool.
In one aspect, the front end robot 108 is positioned in a central location between the first processing rack 308 and a second processing rack 309 of the front module 306. In another aspect, the central robot 107 is positioned in a central location between the first central processing rack 312 and a second central processing rack 314 of the central module 310.
In one embodiment, a system controller 101 is used to control all of the components and processes performed in the cluster tool 10. The system controller 101 is generally adapted to communicate with the stepper/scanner 5, monitor and control aspects of the processes performed in the cluster tool 10, and is adapted to control all aspects of the complete substrate processing sequence.
In one aspect, the rear robot 109 is positioned in a central location between the first rear processing rack 318 and a second rear processing rack 319 of the rear module 316.
The embodiments illustrated in
It should be noted that buffering stations, such as the buffering stations 1601 in cluster tool 10 of
Photolithography Process Sequence
The remove substrate from pod 508A step is generally defined as the process of having the front end robot 108 remove a substrate from a cassette 106 resting in one of the pod assemblies 105. A cassette 106, containing one or more substrates “W”, is placed on the pod assembly 105 by the user or some external device (not shown) so that the substrates can be processed in the cluster tool 10 by a user-defined substrate processing sequence controlled by software retained in the system controller 101.
The BARC coat step 510, or bottom anti-reflective coating process (hereafter BARC), is used to deposit an organic material over a surface of the substrate. The BARC layer is typically an organic coating that is applied onto the substrate prior to the photoresist layer to absorb light that otherwise would be reflected from the surface of the substrate back into the photoresist during the exposure step 538 performed in the stepper/scanner 5. If these reflections are not prevented, optical standing waves will be established in the photoresist layer, which cause feature size(s) to vary from one location to another depending on the local thickness of the photoresist layer. The BARC layer may also be used to level (or planarize) the substrate surface topography, since surface topography variations are invariably present after completing multiple electronic device fabrication steps. The BARC material fills around and over the features to create a flatter surface for photoresist application and reduces local variations in photoresist thickness. The BARC coat step 510 is typically performed using a conventional spin-on photoresist dispense process in which an amount of the BARC material is deposited on the surface of the substrate while the substrate is being rotated, which causes a solvent in the BARC material to evaporate and thus causes the material properties of the deposited BARC material to change. The air flow and exhaust flow rate in the BARC processing chamber is often controlled to control the solvent vaporization process and the properties of the layer formed on the substrate surface.
The post BARC bake step 512, is used to assure that all of the solvent is removed from the deposited BARC layer in the BARC coat step 510, and in some cases to promote adhesion of the BARC layer to the surface of the substrate. The temperature of the post BARC bake step 512 is dependent on the type of BARC material deposited on the surface of the substrate, but will generally be less than about 250° C. The time required to complete the post BARC bake step 512 will depend on the temperature of the substrate during the post BARC bake step, but will generally be less than about 60 seconds.
The post BARC chill step 514, is used to assure that the time the substrate is at a temperature above ambient temperature is controlled so that every substrate sees the same time-temperature profile; thus process variability is minimized. Variations in the BARC process time-temperature profile, which is a component of a substrate's wafer history, can have an effect on the properties of the deposited film layer and thus is often controlled to minimize process variability. The post BARC chill step 514, is typically used to cool the substrate after the post BARC bake step 512 to a temperature at or near ambient temperature. The time required to complete the post BARC chill step 514 will depend on the temperature of the substrate exiting the post BARC bake step, but will generally be less than about 30 seconds.
The photoresist coat step 520 is used to deposit a photoresist layer over a surface of the substrate. The photoresist layer deposited during the photoresist coat step 520 is typically a light sensitive organic coating that is applied onto the substrate and is later exposed in the stepper/scanner 5 to form the patterned features on the surface of the substrate. The photoresist coat step 520 is a typically performed using conventional spin-on photoresist dispense process in which an amount of the photoresist material is deposited on the surface of the substrate while the substrate is being rotated, thus causing a solvent in the photoresist material to evaporate and the material properties of the deposited photoresist layer to change. The air flow and exhaust flow rate in the photoresist processing chamber is controlled to control the solvent vaporization process and the properties of the layer formed on the substrate surface. In some cases it may be necessary to control the partial pressure of the solvent over the substrate surface to control the vaporization of the solvent from the photoresist during the photoresist coat step by controlling the exhaust flow rate and/or by injecting a solvent near the substrate surface. Referring to
The post photoresist coat bake step 522 is used to assure that most, if not all, of the solvent is removed from the deposited photoresist layer in the photoresist coat step 520, and in some cases to promote adhesion of the photoresist layer to the BARC layer. The temperature of the post photoresist coat bake step 522 is dependent on the type of photoresist material deposited on the surface of the substrate, but will generally be less than about 250° C. The time required to complete the post photoresist coat bake step 522 will depend on the temperature of the substrate during the post photoresist bake step, but will generally be less than about 60 seconds.
The post photoresist chill step 524, is used to control the time the substrate is at a temperature above ambient temperature so that every substrate sees the same time-temperature profile and thus process variability is minimized. Variations in the time-temperature profile can have an affect on properties of the deposited film layer and thus is often controlled to minimize process variability. The temperature of the post photoresist chill step 524, is thus used to cool the substrate after the post photoresist coat bake step 522 to a temperature at or near ambient temperature. The time required to complete the post photoresist chill step 524 will depend on the temperature of the substrate exiting the post photoresist bake step, but will generally be less than about 30 seconds.
The optical edge bead removal (OEBR) step 536, is a process used to expose the deposited light sensitive photoresist layer(s), such as the layers formed during the photoresist coat step 520 and the BARC layer formed during the BARC coat step 510, to a radiation source (not shown) so that either or both layers can be removed from the edge of the substrate and the edge exclusion of the deposited layers can be more uniformly controlled. The wavelength and intensity of the radiation used to expose the surface of the substrate will depend on the type of BARC and photoresist layers deposited on the surface of the substrate. An OEBR tool can be purchased, for example, from USHIO America, Inc. Cypress, Calif.
The exposure step 538 is a lithographic projection step applied by a lithographic projection apparatus (e.g., stepper scanner 5) to form a pattern which is used to manufacture integrated circuits (ICs). The exposure step 538 forms a circuit pattern corresponding to an individual layer of the integrated circuit (IC) device on the substrate surface, by exposing the photosensitive materials, such as, the photoresist layer formed during the photoresist coat step 520 and the BARC layer formed during the BARC coat step 510 (photoresist) of some form of electromagnetic radiation. The stepper/scanner 5, which may be purchased from Cannon, Nikon, or ASML.
The post exposure bake (PEB) step 540 is used to heat a substrate immediately after the exposure step 538 in order to stimulate diffusion of the photoactive compound(s) and reduce the effects of standing waves in the photoresist layer. For a chemically amplified photoresist, the PEB step also causes a catalyzed chemical reaction that changes the solubility of the photoresist. The control of the temperature during the PEB is critical to critical dimension (CD) control. The temperature of the PEB step 540 is dependent on the type of photoresist material deposited on the surface of the substrate, but will generally be less than about 250° C. The time required to complete the PEB step 540 will depend on the temperature of the substrate during the PEB step, but will generally be less than about 60 seconds.
The post exposure bake (PEB) chill step 542 is used to assure that the time the substrate is at a temperature above ambient temperature is controlled, so that every substrate sees the same time-temperature profile and thus process variability is minimized. Variation in the PEB process time-temperature profile can have an effect on properties of the deposited film layer and thus is often controlled to minimize process variability. The temperature of the post PEB chill step 542 is thus used to cool the substrate after the PEB step 540 to a temperature at or near ambient temperature. The time required to complete the post PEB chill step 542 will depend on the temperature of the substrate exiting the PEB step, but will generally be less than about 30 seconds.
The develop step 550 is a process in which a solvent is used to cause a chemical or physical change to the exposed or unexposed photoresist and BARC layers to expose the pattern formed during the exposure step 538. The develop process may be a spray or immersion or puddle type process that is used to dispense the developer solvent. In one embodiment of the develop step 550, after the solvent has been dispensed on the surface of the substrate a rinse step may be performed to rinse the solvent material from the surface of the substrate. The rinse solution dispensed on the surface of the substrate may contain deionized water and/or a surfactant.
The insert the substrate in pod step 508B is generally defined as the process of having the front end robot 108 return the substrate to a cassette 106 resting in one of the pod assemblies 105.
Processing Racks
Coater/Developer Chamber
The coater/developer chamber 60 is a processing chamber that may be adapted to perform, for example, the BARC coat step 510, the photoresist coat step 520, and the develop step 550, which are shown in
Developer Chamber
Referring to
Twin Coater and Developer Chambers
As shown in
Chill Chamber
Bake Chamber
HMDS Chamber
Post Exposure Bake Chamber
During an exposure process using a positive photoresist an insoluble photoresist material is transformed into a soluble material. During the exposure process, components in the photoresist that contain photoacid generators (or PAGS) generate an organic acid that can attack the unexposed areas of the photoresist and affect the sharpness of the pattern formed in the photoresist layer during the exposure process. The attack of the unexposed photoresist is thus affected by the migration of the generated photoacid, which is a diffusion dominated process. Since the photoacid attack of the formed pattern is a diffusion dominated process, the rate of attack is dependent on two related variables, time and temperature. The control of these variables are thus important in assuring that the critical dimension (CD) uniformity is acceptable and consistent from substrate to substrate.
In one embodiment, the PEB step 540 is performed in a bake chamber 90 as shown in
Cluster Robots Design
A. Articulated Robot
The dual blade assembly 705 generally contains a support 720, and two or more blade assemblies 715 (e.g., first blade assembly 715A, a second blade assembly 715B, etc.). The support 720 attaches to and is guided by the articulated robot 710 so that a blade in a first blade assembly 715A and a blade in a second blade assembly 715B can each pick-up and/or place a substrate in a two different processing chambers retained in a processing rack. The pitch (see item “A”), or the distance, between the robot blades is fixed by the distance between the first supporting surface 720A and second supporting surface 720B, and is designed to coincide with the pitch between two of the processing chambers retained in the processing racks. Therefore, the distance between the transfer position of the bake chambers labeled B1 and B4, for example, in the first central processing rack 152, would coincide with the pitch between the coater/developer chambers labeled CD1 and CD2 in the front end processing rack 52, so that after completing the BARC coat step 510 the substrates could then be transferred to bake chambers labeled B1 and B4 to complete the post BARC bake step 512. Referring to
In one aspect, the substrate receiving surfaces 712A-B are adapted to retain a substrate positioned on the blade (not shown) by use of an edge gripping mechanism that holds the substrate in position on the robot blade. The edge gripping mechanism can be adapted to grab the edge of the substrate at multiple points (e.g., 3 points) to hold and retain the substrate.
Referring to
In one aspect of the invention, to perform a single substrate transfer task using a robot that contains two or more fixed robot blades, i.e., contains no robot blade actuators 721, the robot is adapted to “re-position,” e.g., flip, rotate, and/or detach, at least one of the robot blades so that the “re-positioned” blade(s) will not interfere with the process of transferring a substrate on another robot blade. In this configuration a special position or chamber (e.g., support chambers) may be adapted to receive a robot blade and reposition it in a desired orientation to allow substrates to be transferred using other robot blades. The ability to re-position one or more of the robot blades may be especially useful when one or more processing chambers in a grouped transferring sequence is not operational, and thus will not allow a blade to enter the processing chamber, since it will allow other adjacent processing chamber positions to be utilized.
Referring to
In one embodiment, the front end robot 108 or the rear robot 109 are a dual blade assembly 705 as illustrated and described above in conjunction with
While
Shuttle Robot
In one embodiment, the slide assembly 113 is a linear ball bearing slide that guides the shuttle robot 110 as it transfers the substrates between the various processing chambers. The slide assembly 113 generally contains a shuttle 113A on which the robot blade actuator 112 is attached. The clamp 118 is used to attach the shuttle 113A to the belt 117 of the robot drive assembly 119 to allow the robot drive assembly 119 to move the robot blade 111 between the various processing chambers.
In one embodiment, as shown in
Integrated Bake/Chill Chamber
In one embodiment, the input region 830 is used to receive a substrate from an external robot. The input region 830 is generally an enclosed region that contains a substrate exchanging device, such as lift pins 836 or some other similar device, that is adapted to allow an external robot to pick up or drop-off a substrate in the integrated bake/chill chamber 800. The input region 830 is also configured to allow a chilled transfer arm assembly 832 to pick-up and drop off substrates from the lift pins 836.
The chilled transfer arm assembly 832 generally contains a chilled blade 833 that has a blade receiving surface 834 and a plurality of cut-outs 835 that are adapted to allow the chilled blade 833 to pick-up, retain and drop-off substrates from the various substrate exchanging devices in the various processing regions of the integrated bake/chill chamber 800. In one embodiment, the chilled blade 833 of the chilled transfer arm assembly 832 contains a heat exchanging device 837 (
Referring to
The bake region 820 may contain all of the components of a bake chamber 90, HMDS process chamber 70, or a PEB chamber 130 as illustrated and described in reference to
When the integrated bake/chill chamber 800 is in use, an external robot delivers the substrate to the lift pins 836 of the input region 830 through an access port 802. The chilled blade 833, which is positioned below the lift pins 836, then moves vertically to remove the substrate from the lift pins 836 and positions the substrate on the blade receiving surface 834. The chilled blade 833 is then moved to the bake region 820 where the chilled blade 833 deposits the substrate and then exits the bake region 820 so that a bake process can be performed on the substrate. After the bake process has been performed the chilled blade 834 picks up the substrate from the bake region 820, transfers the substrate to a substrate exchanging device in the chill region 810, and then exits the chill region 810. After a chill process has been performed, the substrate is removed from the chill region 810 through the access port 802 by use of the external robot. In one aspect, after the chill process has been performed the chilled blade 833 removes the substrate from the chill region 810 and deposits the substrate on the lift pins 836 in the input region. This configuration may be advantageous since the chill region 810 is made available to complete a chill process on a new substrate and/or it allows the external robot to pickup the substrate from the same position that it deposited the substrate.
Wafer Sequencing/Parallel Processing
In an effort to be more competitive in the market place and thus reduce CoO, electronic device manufacturers often spend a large amount of time trying to optimize the process sequence and chamber processing time to achieve the greatest substrate throughput possible given the cluster tool architecture limitations and the chamber processing times. In track lithography type cluster tools, since the chamber processing times tend to be rather short, (e.g., about a minute to complete the process) and the number of processing steps required to complete a typical track system process is large, a significant portion of the time it takes to process a substrate is taken up by the processes of transferring the substrates in a cluster tool between the various processing chambers. In one embodiment of the cluster tool 10, the CoO is reduced by grouping substrates together and transferring and processing the substrates in groups of two or more. This form of parallel processing thus increases the system throughput, and reduces the number of moves a robot has to make to transfer a batch of substrates between the processing chambers, thus reducing wear on the robot and increasing system reliability.
In one aspect of the invention, the track architecture is designed so that substrates leave the cassette 106 mounted in the pod assemblies 105A-D one-by-one, and are then grouped together in groups containing two or more substrates after being processed in the first processing station. For example, when using the process sequence shown in
In one aspect of the invention, the substrates may be grouped together at the pod assembly 105 and transferred through the cluster tool in groups, by use of a multiple bladed type front end robot 108, central robot 107 and rear robot 109.
In one embodiment, the substrates are grouped in pairs and thus the transferring process would include the grouping steps of single substrate transfer in to the first process chamber, then dual substrate transfer through the system, then single substrate transfer to and from the stepper/scanner 5, then dual substrate transfer through the system, and single substrate transfer from the last chamber to the cassette. In one embodiment, the central robot 107, as shown below in
In one embodiment of the dual blade assembly 705, the horizontal spacing of the first blade assembly 715A relative to the second blade assembly 715B is a fixed distance apart, which corresponds to the horizontal spacing of the two chambers in which the substrates are to be grouped. In this configuration, the first blade assembly 715A and the second blade assembly 715B are aligned in the horizontal plane so that the dual blade assembly 705 can access chambers spaced horizontally.
In one embodiment, a batch develop process could be performed on the substrates, in which case the substrates would be transferred in a group and then ungrouped to perform the develop process, after which they would be regrouped transferred as a group.
A non-orthogonal robot trajectory may be achieved by reorienting hardware of processing chambers, redesigning rack hardware and/or optimizing robot blade trajectory.
In one aspect of the present invention, optimally positioning of robots, grouping and/or orienting process chambers may be used in combination to improve throughput and/or reduce wear of components in a cluster tool.
While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
This application is a continuation-in-part of U.S. patent application Ser. No. 11/112,281, filed Apr. 22, 2005, now U.S. Pat. No. 7,357,842 which claims the benefit of U.S. Provisional Patent Application Ser. No. 60/639,109, filed Dec. 22, 2004. Each of the aforementioned related patent applications is herein incorporated by reference.
Number | Name | Date | Kind |
---|---|---|---|
1383093 | Finch | Jun 1921 | A |
1927677 | Bennington | Sep 1933 | A |
2578220 | Billner | Dec 1951 | A |
3193080 | Speaker et al. | Jul 1965 | A |
3206041 | McGrath | Sep 1965 | A |
3279625 | McConnell et al. | Oct 1966 | A |
3351219 | Ruderfer et al. | Nov 1967 | A |
3402835 | Saul | Sep 1968 | A |
3428195 | Pamer | Feb 1969 | A |
3610159 | Fickenacher | Oct 1971 | A |
3669206 | Tax et al. | Jun 1972 | A |
3750804 | Lemelson | Aug 1973 | A |
3782564 | Burt | Jan 1974 | A |
3796327 | Meyer et al. | Mar 1974 | A |
3876085 | Bright | Apr 1975 | A |
4027246 | Caccoma et al. | May 1977 | A |
4197000 | Blackwood | Apr 1980 | A |
4319689 | Clapp | Mar 1982 | A |
4609575 | Burkman | Sep 1986 | A |
4634655 | Yanagimoto et al. | Jan 1987 | A |
4664133 | Silvernail | May 1987 | A |
4682614 | Silvernail | Jul 1987 | A |
4750505 | Inuta et al. | Jun 1988 | A |
4755257 | Yamamoto et al. | Jul 1988 | A |
4756047 | Hayashi et al. | Jul 1988 | A |
4774552 | Nishihama et al. | Sep 1988 | A |
4778532 | McConnell et al. | Oct 1988 | A |
4788994 | Shinbara | Dec 1988 | A |
4803734 | Onishi et al. | Feb 1989 | A |
4830888 | Kobayashi et al. | May 1989 | A |
4838979 | Nishida et al. | Jun 1989 | A |
4844746 | Hörmann et al. | Jul 1989 | A |
4846623 | Otani et al. | Jul 1989 | A |
4855775 | Matsuoka | Aug 1989 | A |
4856641 | Matsumura et al. | Aug 1989 | A |
4857949 | Masuda et al. | Aug 1989 | A |
4870923 | Sugimoto | Oct 1989 | A |
4871417 | Nishizawa et al. | Oct 1989 | A |
4892761 | Yamada | Jan 1990 | A |
4895604 | Hayashi | Jan 1990 | A |
4899686 | Toshima et al. | Feb 1990 | A |
4911761 | McConnell et al. | Mar 1990 | A |
4917123 | McConnell et al. | Apr 1990 | A |
4919073 | Kobayashi et al. | Apr 1990 | A |
4922278 | Takeda et al. | May 1990 | A |
4923054 | Ohtani et al. | May 1990 | A |
4924073 | Chiba | May 1990 | A |
4924800 | Tanaka | May 1990 | A |
4966094 | Yamada | Oct 1990 | A |
4982694 | Moriyama | Jan 1991 | A |
4984597 | McConnell et al. | Jan 1991 | A |
4985720 | Masuda et al. | Jan 1991 | A |
4987687 | Sugimoto | Jan 1991 | A |
4998021 | Mimasaka | Mar 1991 | A |
5002008 | Ushijima et al. | Mar 1991 | A |
5020200 | Mimasaka et al. | Jun 1991 | A |
5032217 | Tanaka | Jul 1991 | A |
5035200 | Moriyama et al. | Jul 1991 | A |
5054332 | Terauchi et al. | Oct 1991 | A |
5061144 | Akimoto et al. | Oct 1991 | A |
5065178 | Awazu et al. | Nov 1991 | A |
5070813 | Sakai et al. | Dec 1991 | A |
5078832 | Tanaka | Jan 1992 | A |
5089305 | Ushijima et al. | Feb 1992 | A |
5127362 | Iwatsu et al. | Jul 1992 | A |
5150452 | Pollack et al. | Sep 1992 | A |
5151871 | Matsumura et al. | Sep 1992 | A |
5169408 | Biggerstaff | Dec 1992 | A |
5174855 | Tanaka | Dec 1992 | A |
5180431 | Sugimoto et al. | Jan 1993 | A |
5197846 | Uno et al. | Mar 1993 | A |
5201653 | Hasegawa et al. | Apr 1993 | A |
5209180 | Shoda et al. | May 1993 | A |
5227707 | Mitomi et al. | Jul 1993 | A |
5234499 | Sasaki et al. | Aug 1993 | A |
5240556 | Ishikawa et al. | Aug 1993 | A |
5250114 | Konishi et al. | Oct 1993 | A |
5252137 | Tateyama et al. | Oct 1993 | A |
5254367 | Matsumura et al. | Oct 1993 | A |
D341418 | Akimoto et al. | Nov 1993 | S |
5275658 | Kimura | Jan 1994 | A |
5307109 | Miyasaka et al. | Apr 1994 | A |
5308210 | Ohtani et al. | May 1994 | A |
5312487 | Akimoto et al. | May 1994 | A |
5322079 | Fukutomi et al. | Jun 1994 | A |
5331987 | Hayashi et al. | Jul 1994 | A |
5339128 | Tateyama et al. | Aug 1994 | A |
5349412 | Miyasaka | Sep 1994 | A |
5359785 | Fukutomi et al. | Nov 1994 | A |
5374312 | Hasebe et al. | Dec 1994 | A |
5376216 | Yoshioka et al. | Dec 1994 | A |
5401316 | Shiraishi et al. | Mar 1995 | A |
5405443 | Akimoto et al. | Apr 1995 | A |
5411076 | Matsunaga et al. | May 1995 | A |
5416047 | Konishi et al. | May 1995 | A |
5418382 | Blackwood et al. | May 1995 | A |
5427820 | Biche et al. | Jun 1995 | A |
5430271 | Orgami et al. | Jul 1995 | A |
5431700 | Sloan | Jul 1995 | A |
5436848 | Nishida et al. | Jul 1995 | A |
5438209 | Yamamoto et al. | Aug 1995 | A |
5443348 | Biche et al. | Aug 1995 | A |
5485644 | Shinbara et al. | Jan 1996 | A |
5501870 | Shiraishi et al. | Mar 1996 | A |
5505781 | Omori et al. | Apr 1996 | A |
5514215 | Takamatsu et al. | May 1996 | A |
5514852 | Takamori et al. | May 1996 | A |
5520744 | Fujikawa et al. | May 1996 | A |
5522215 | Matsunaga et al. | Jun 1996 | A |
5536918 | Ohkase et al. | Jul 1996 | A |
5553994 | Biche et al. | Sep 1996 | A |
5555234 | Sugimoto | Sep 1996 | A |
5571325 | Ueyama et al. | Nov 1996 | A |
5580607 | Takekuma et al. | Dec 1996 | A |
5599394 | Yabe et al. | Feb 1997 | A |
5601645 | Nonomura et al. | Feb 1997 | A |
5608943 | Konishi et al. | Mar 1997 | A |
5611685 | Nakajima et al. | Mar 1997 | A |
5618348 | Tran | Apr 1997 | A |
5620560 | Akimoto et al. | Apr 1997 | A |
5625433 | Inada et al. | Apr 1997 | A |
5626913 | Tomoeda et al. | May 1997 | A |
5633040 | Toshima et al. | May 1997 | A |
5634377 | Kimura et al. | Jun 1997 | A |
5638687 | Mizohata et al. | Jun 1997 | A |
5639301 | Sasada et al. | Jun 1997 | A |
5651823 | Parodi et al. | Jul 1997 | A |
5658615 | Hasebe et al. | Aug 1997 | A |
5665200 | Fujimoto et al. | Sep 1997 | A |
5668733 | Morimoto et al. | Sep 1997 | A |
5670210 | Mandal et al. | Sep 1997 | A |
5672205 | Fujimoto et al. | Sep 1997 | A |
5674410 | Nakajima et al. | Oct 1997 | A |
5677000 | Yoshioka et al. | Oct 1997 | A |
5681614 | Omori et al. | Oct 1997 | A |
5687085 | Morimoto et al. | Nov 1997 | A |
5688322 | Motoda et al. | Nov 1997 | A |
5688324 | Umaba | Nov 1997 | A |
5688326 | Kandori et al. | Nov 1997 | A |
5689749 | Tanaka et al. | Nov 1997 | A |
5695817 | Tateyama et al. | Dec 1997 | A |
5700046 | Van Doren et al. | Dec 1997 | A |
5701627 | Matsumura et al. | Dec 1997 | A |
5704493 | Fujikawa et al. | Jan 1998 | A |
5711809 | Kimura et al. | Jan 1998 | A |
5715173 | Nakajima et al. | Feb 1998 | A |
5730574 | Adachi et al. | Mar 1998 | A |
5733024 | Slocum et al. | Mar 1998 | A |
5762684 | Hayashi et al. | Jun 1998 | A |
5762708 | Motoda et al. | Jun 1998 | A |
5762709 | Sugimoto et al. | Jun 1998 | A |
5762745 | Hirose | Jun 1998 | A |
5763892 | Kizaki et al. | Jun 1998 | A |
5765072 | Ohtani et al. | Jun 1998 | A |
5766671 | Matsui | Jun 1998 | A |
5766824 | Batchelder et al. | Jun 1998 | A |
5772764 | Akimoto et al. | Jun 1998 | A |
5779796 | Tomoeda et al. | Jul 1998 | A |
5788742 | Sugimoto et al. | Aug 1998 | A |
5788773 | Okuda et al. | Aug 1998 | A |
5788868 | Itaba et al. | Aug 1998 | A |
5792259 | Yoshioka et al. | Aug 1998 | A |
5803932 | Akimoto et al. | Sep 1998 | A |
5803970 | Tateyama et al. | Sep 1998 | A |
5817156 | Tateyama et al. | Oct 1998 | A |
5823736 | Matsumura | Oct 1998 | A |
5826130 | Tanaka et al. | Oct 1998 | A |
5834737 | Hirose et al. | Nov 1998 | A |
5839011 | Urasaki et al. | Nov 1998 | A |
5841515 | Ohtani | Nov 1998 | A |
5843527 | Sanada | Dec 1998 | A |
5845170 | Ogata | Dec 1998 | A |
5846327 | Kawamoto et al. | Dec 1998 | A |
5853483 | Morita et al. | Dec 1998 | A |
5853812 | Kawasaki et al. | Dec 1998 | A |
5854953 | Semba | Dec 1998 | A |
5866307 | Kiba et al. | Feb 1999 | A |
5867389 | Hamada et al. | Feb 1999 | A |
5871584 | Tateyama et al. | Feb 1999 | A |
5875804 | Tanaka et al. | Mar 1999 | A |
5881750 | Yoshitani | Mar 1999 | A |
5887214 | Kuriu et al. | Mar 1999 | A |
5888344 | Ogami et al. | Mar 1999 | A |
5898588 | Morimoto | Apr 1999 | A |
5904169 | Yoshitani | May 1999 | A |
5906469 | Oka et al. | May 1999 | A |
5906860 | Motoda et al. | May 1999 | A |
5908657 | Kimura et al. | Jun 1999 | A |
5912054 | Tateyama et al. | Jun 1999 | A |
5915396 | Kinose | Jun 1999 | A |
5916366 | Ueyama et al. | Jun 1999 | A |
5919520 | Tateyama et al. | Jul 1999 | A |
5919529 | Matsumura et al. | Jul 1999 | A |
5921257 | Weber et al. | Jul 1999 | A |
5923915 | Akimoto et al. | Jul 1999 | A |
5927077 | Hisai et al. | Jul 1999 | A |
5927303 | Miya et al. | Jul 1999 | A |
5932380 | Yaegashi et al. | Aug 1999 | A |
5935768 | Biche et al. | Aug 1999 | A |
5938847 | Akimoto et al. | Aug 1999 | A |
5939130 | Shiraishi et al. | Aug 1999 | A |
5941083 | Sada et al. | Aug 1999 | A |
5942035 | Hasebe et al. | Aug 1999 | A |
5943726 | Eitoku et al. | Aug 1999 | A |
5943880 | Tateyama et al. | Aug 1999 | A |
5945161 | Hashimoto et al. | Aug 1999 | A |
5960225 | Fujimoto | Sep 1999 | A |
5962070 | Mitsuhashi et al. | Oct 1999 | A |
5963753 | Ohtani et al. | Oct 1999 | A |
5965200 | Tateyama et al. | Oct 1999 | A |
5968268 | Kitano et al. | Oct 1999 | A |
5968691 | Yoshioka et al. | Oct 1999 | A |
5970717 | Tateyama et al. | Oct 1999 | A |
5974682 | Akimoto et al. | Nov 1999 | A |
5976256 | Kawano | Nov 1999 | A |
5976620 | Sanada et al. | Nov 1999 | A |
5984540 | Mimasaka et al. | Nov 1999 | A |
5985357 | Sanada | Nov 1999 | A |
5989342 | Ikeda et al. | Nov 1999 | A |
5989346 | Hiroki | Nov 1999 | A |
5989632 | Sanada et al. | Nov 1999 | A |
5992431 | Weber et al. | Nov 1999 | A |
5993518 | Tateyama | Nov 1999 | A |
6000862 | Okuda | Dec 1999 | A |
6002108 | Yoshioka | Dec 1999 | A |
6004047 | Akimoto et al. | Dec 1999 | A |
6007629 | Ohtani et al. | Dec 1999 | A |
6010570 | Motoda et al. | Jan 2000 | A |
6012192 | Sawada et al. | Jan 2000 | A |
6012858 | Konishi et al. | Jan 2000 | A |
6013317 | Motoda et al. | Jan 2000 | A |
6015066 | Kimura et al. | Jan 2000 | A |
6017663 | Yaegashi et al. | Jan 2000 | A |
6018616 | Schaper | Jan 2000 | A |
6021790 | Yoshitani et al. | Feb 2000 | A |
6033475 | Hasebe et al. | Mar 2000 | A |
6040120 | Matsushita et al. | Mar 2000 | A |
6048400 | Ohtani | Apr 2000 | A |
6051101 | Ohtani et al. | Apr 2000 | A |
6051349 | Yoshioka | Apr 2000 | A |
6053058 | Hayashi et al. | Apr 2000 | A |
6053977 | Konishi | Apr 2000 | A |
6056998 | Fujimoto | May 2000 | A |
6059880 | Kitano et al. | May 2000 | A |
6060697 | Morita et al. | May 2000 | A |
6062240 | Sada et al. | May 2000 | A |
6062288 | Tateyama | May 2000 | A |
6062852 | Kawamoto et al. | May 2000 | A |
6063190 | Hasebe et al. | May 2000 | A |
6063439 | Semba et al. | May 2000 | A |
6067727 | Muraoka | May 2000 | A |
6074515 | Iseki et al. | Jun 2000 | A |
6076652 | Head | Jun 2000 | A |
6076979 | Mimasaka et al. | Jun 2000 | A |
6077321 | Adachi et al. | Jun 2000 | A |
6087632 | Mizosaki et al. | Jul 2000 | A |
6089762 | Mimasaka et al. | Jul 2000 | A |
6097005 | Akimoto et al. | Aug 2000 | A |
6099643 | Ohtani et al. | Aug 2000 | A |
6104002 | Hirose et al. | Aug 2000 | A |
6108932 | Chai | Aug 2000 | A |
6113695 | Fujimoto | Sep 2000 | A |
6117486 | Yoshihara | Sep 2000 | A |
6120834 | Terauchi | Sep 2000 | A |
6124211 | Butterbaugh | Sep 2000 | A |
6126725 | Tateyama et al. | Oct 2000 | A |
6128829 | Wolke et al. | Oct 2000 | A |
6129546 | Sada | Oct 2000 | A |
6138695 | Shibao et al. | Oct 2000 | A |
6142722 | Genov et al. | Nov 2000 | A |
6143087 | Walter | Nov 2000 | A |
6143478 | Toshima et al. | Nov 2000 | A |
6147329 | Okamura et al. | Nov 2000 | A |
6149727 | Yoshioka et al. | Nov 2000 | A |
6155275 | Shinbara | Dec 2000 | A |
6156125 | Harada et al. | Dec 2000 | A |
6158446 | Mohindra | Dec 2000 | A |
6159291 | Morita et al. | Dec 2000 | A |
6165270 | Konishi et al. | Dec 2000 | A |
6165273 | Fayefield et al. | Dec 2000 | A |
6168665 | Sakai et al. | Jan 2001 | B1 |
6169274 | Kulp | Jan 2001 | B1 |
6174371 | Iseki et al. | Jan 2001 | B1 |
6176667 | Fairbaim et al. | Jan 2001 | B1 |
6177133 | Gurer et al. | Jan 2001 | B1 |
6179982 | Ting et al. | Jan 2001 | B1 |
6183147 | Kimura et al. | Feb 2001 | B1 |
6185370 | Sekimoto et al. | Feb 2001 | B1 |
6190063 | Akimoto et al. | Feb 2001 | B1 |
6191394 | Shirakawa et al. | Feb 2001 | B1 |
6193783 | Sakamoto et al. | Feb 2001 | B1 |
6199568 | Arai et al. | Mar 2001 | B1 |
6200633 | Kitano et al. | Mar 2001 | B1 |
6202653 | Harada et al. | Mar 2001 | B1 |
6203969 | Ueda | Mar 2001 | B1 |
6207231 | Tateyama | Mar 2001 | B1 |
6210481 | Sakai | Apr 2001 | B1 |
6216475 | Sada et al. | Apr 2001 | B1 |
6217657 | Kiba et al. | Apr 2001 | B1 |
6221787 | Ogata | Apr 2001 | B1 |
6222161 | Shirakawa et al. | Apr 2001 | B1 |
6224638 | Jevtic et al. | May 2001 | B1 |
6227786 | Tateyama | May 2001 | B1 |
6228171 | Shirakawa et al. | May 2001 | B1 |
6228561 | Hasebe | May 2001 | B1 |
6229116 | Shirakawa et al. | May 2001 | B1 |
6235641 | Christenson | May 2001 | B1 |
6238107 | Inada | May 2001 | B1 |
6238109 | Minami | May 2001 | B1 |
6238735 | Mandal et al. | May 2001 | B1 |
6238848 | Konishi et al. | May 2001 | B1 |
6241402 | Sakamoto et al. | Jun 2001 | B1 |
6241403 | Sakamoto et al. | Jun 2001 | B1 |
6246030 | Matsuyama et al. | Jun 2001 | B1 |
6248398 | Talieh et al. | Jun 2001 | B1 |
6251195 | Wagoner | Jun 2001 | B1 |
6253118 | Koyama | Jun 2001 | B1 |
6254936 | Gurer et al. | Jul 2001 | B1 |
6257778 | Toshima et al. | Jul 2001 | B1 |
6257827 | Hendrickson et al. | Jul 2001 | B1 |
6258167 | Kawano et al. | Jul 2001 | B1 |
6260562 | Morinishi et al. | Jul 2001 | B1 |
6261007 | Takamori et al. | Jul 2001 | B1 |
6261365 | Matsuyama et al. | Jul 2001 | B1 |
6261744 | Yoshioka | Jul 2001 | B1 |
6266125 | Fukuda | Jul 2001 | B1 |
6267516 | Nagamine et al. | Jul 2001 | B1 |
6268013 | Akimoto et al. | Jul 2001 | B1 |
6273104 | Shinbara et al. | Aug 2001 | B1 |
6278089 | Young et al. | Aug 2001 | B1 |
6281145 | Deguchi et al. | Aug 2001 | B1 |
6284043 | Takekuma | Sep 2001 | B1 |
6287390 | Sakai et al. | Sep 2001 | B2 |
6291800 | Shirakawa et al. | Sep 2001 | B1 |
6292250 | Matsuyama | Sep 2001 | B1 |
6293713 | Ueda | Sep 2001 | B1 |
6299938 | Tateyama | Oct 2001 | B1 |
6300043 | Konishi et al. | Oct 2001 | B1 |
6302960 | Baroudi et al. | Oct 2001 | B1 |
6306455 | Takemori et al. | Oct 2001 | B1 |
6312171 | Matsuyama et al. | Nov 2001 | B1 |
6313441 | Schaper | Nov 2001 | B1 |
6313903 | Ogata | Nov 2001 | B1 |
6318948 | Ueda et al. | Nov 2001 | B1 |
6319317 | Takemori | Nov 2001 | B1 |
6327793 | Gurer et al. | Dec 2001 | B1 |
6332723 | Matsuyama et al. | Dec 2001 | B1 |
6336204 | Jevtic | Jan 2002 | B1 |
6340643 | Ueda | Jan 2002 | B2 |
6348101 | Walter | Feb 2002 | B1 |
6352083 | Araki et al. | Mar 2002 | B1 |
6354311 | Kimura et al. | Mar 2002 | B1 |
6359264 | Shaper | Mar 2002 | B1 |
6361600 | Tateyama et al. | Mar 2002 | B1 |
6364547 | Matsuyama et al. | Apr 2002 | B1 |
6368776 | Harada et al. | Apr 2002 | B1 |
6371667 | Kitano et al. | Apr 2002 | B1 |
6371713 | Nishimura et al. | Apr 2002 | B1 |
6379056 | Ueda et al. | Apr 2002 | B1 |
6380518 | Shirakawa et al. | Apr 2002 | B2 |
6382849 | Sakamoto et al. | May 2002 | B1 |
6383948 | Kitano et al. | May 2002 | B1 |
6384894 | Matsuyama et al. | May 2002 | B2 |
6391111 | Fujimoto et al. | May 2002 | B1 |
6398429 | Toshima et al. | Jun 2002 | B1 |
6401353 | Kimura | Jun 2002 | B2 |
6402399 | Sakamoto et al. | Jun 2002 | B2 |
6402400 | Ueda et al. | Jun 2002 | B1 |
6402508 | Harada et al. | Jun 2002 | B2 |
6402509 | Ookura et al. | Jun 2002 | B1 |
6402844 | Harada et al. | Jun 2002 | B1 |
6403924 | Hayashi | Jun 2002 | B1 |
6410194 | Yoshihara | Jun 2002 | B1 |
6416583 | Kitano et al. | Jul 2002 | B1 |
6418356 | Oh | Jul 2002 | B1 |
6419408 | Inada | Jul 2002 | B1 |
6431769 | Fukuda et al. | Aug 2002 | B1 |
6432199 | Takekuma | Aug 2002 | B1 |
6438449 | Kawamatsu et al. | Aug 2002 | B2 |
6440218 | Sanada et al. | Aug 2002 | B1 |
6443641 | Takamori et al. | Sep 2002 | B2 |
6444029 | Kimura et al. | Sep 2002 | B1 |
6446646 | Izumi | Sep 2002 | B1 |
6447608 | Sakai et al. | Sep 2002 | B1 |
6450803 | Shirakawa et al. | Sep 2002 | B2 |
6450805 | Oda et al. | Sep 2002 | B1 |
6451515 | Takamori et al. | Sep 2002 | B2 |
6454332 | Govzman et al. | Sep 2002 | B1 |
6458208 | Anai et al. | Oct 2002 | B1 |
6458607 | Rangarajan et al. | Oct 2002 | B1 |
6461438 | Ookura et al. | Oct 2002 | B1 |
6464789 | Akimoto | Oct 2002 | B1 |
6465765 | Katayama et al. | Oct 2002 | B2 |
6468586 | Gurer et al. | Oct 2002 | B1 |
6471421 | Kitamura | Oct 2002 | B2 |
6471422 | Ueda et al. | Oct 2002 | B1 |
6474986 | Oda et al. | Nov 2002 | B2 |
6475279 | Akimoto et al. | Nov 2002 | B1 |
6485782 | Takamori | Nov 2002 | B2 |
6485893 | Matsuyama | Nov 2002 | B1 |
6491452 | Konishi et al. | Dec 2002 | B2 |
6491491 | Tsuneda et al. | Dec 2002 | B1 |
6493607 | Bourne et al. | Dec 2002 | B1 |
6496245 | Kosugi et al. | Dec 2002 | B2 |
6501191 | Tanaka et al. | Dec 2002 | B2 |
6503003 | Hasebe et al. | Jan 2003 | B2 |
6507770 | Tateyama et al. | Jan 2003 | B2 |
6511315 | Hashimoto | Jan 2003 | B2 |
6514073 | Toshima et al. | Feb 2003 | B1 |
6514343 | Motoda | Feb 2003 | B1 |
6514344 | Kitano et al. | Feb 2003 | B2 |
6514570 | Matsuyama et al. | Feb 2003 | B1 |
6518199 | Kitano et al. | Feb 2003 | B2 |
6526329 | Tateyama et al. | Feb 2003 | B2 |
6527860 | Yoshihara et al. | Mar 2003 | B1 |
6527861 | Takekuma | Mar 2003 | B2 |
6530993 | Hwang et al. | Mar 2003 | B2 |
6533531 | Nguyen et al. | Mar 2003 | B1 |
6533864 | Matsuyama et al. | Mar 2003 | B1 |
6534750 | Tanoue et al. | Mar 2003 | B1 |
6536964 | Kitano et al. | Mar 2003 | B1 |
6537373 | Kitano et al. | Mar 2003 | B1 |
6539956 | Wolke et al. | Apr 2003 | B1 |
6541170 | Fukuda et al. | Apr 2003 | B2 |
6541376 | Inada et al. | Apr 2003 | B2 |
6550988 | Sugimoto et al. | Apr 2003 | B2 |
6551400 | Hasbe et al. | Apr 2003 | B2 |
6551448 | Kuga et al. | Apr 2003 | B2 |
6556893 | Kumar et al. | Apr 2003 | B2 |
6558053 | Shigemori et al. | May 2003 | B2 |
6568847 | Nishijima et al. | May 2003 | B2 |
6571147 | Kashihara | May 2003 | B1 |
6573031 | Shinya et al. | Jun 2003 | B2 |
6578772 | Fujimoto et al. | Jun 2003 | B2 |
6579370 | Kimura et al. | Jun 2003 | B2 |
6579733 | Rangarajan et al. | Jun 2003 | B1 |
6589339 | Takeshita et al. | Jul 2003 | B2 |
6598805 | Sakai et al. | Jul 2003 | B2 |
6599366 | Kitano et al. | Jul 2003 | B1 |
6602382 | Matsuyama et al. | Aug 2003 | B1 |
6605153 | Kitano et al. | Aug 2003 | B2 |
6616394 | Park | Sep 2003 | B1 |
6616760 | Kitano et al. | Sep 2003 | B2 |
6616762 | Inada et al. | Sep 2003 | B2 |
6617095 | Kitano et al. | Sep 2003 | B2 |
6620244 | Yoshihara et al. | Sep 2003 | B2 |
6620245 | Ishida et al. | Sep 2003 | B2 |
6620251 | Kitano et al. | Sep 2003 | B2 |
6627263 | Kitano et al. | Sep 2003 | B2 |
6633022 | Kitano et al. | Oct 2003 | B2 |
6634806 | Toshima et al. | Oct 2003 | B2 |
6635113 | Takamori et al. | Oct 2003 | B2 |
6644965 | Ookura et al. | Nov 2003 | B2 |
6645880 | Shigemori et al. | Nov 2003 | B1 |
6654668 | Harada et al. | Nov 2003 | B1 |
6656277 | Sanada et al. | Dec 2003 | B2 |
6656281 | Ueda et al. | Dec 2003 | B1 |
6659661 | Deguchi et al. | Dec 2003 | B2 |
6662466 | Gurer et al. | Dec 2003 | B2 |
6669782 | Thakur | Dec 2003 | B1 |
6669808 | Adachi et al. | Dec 2003 | B2 |
6672779 | Ueda et al. | Jan 2004 | B2 |
6673151 | Yoshihara et al. | Jan 2004 | B2 |
6676757 | Kitano et al. | Jan 2004 | B2 |
6678572 | Oh | Jan 2004 | B1 |
6678582 | Waled | Jan 2004 | B2 |
6683006 | Konishi et al. | Jan 2004 | B2 |
6686571 | Ookura et al. | Feb 2004 | B2 |
6689215 | Nguyen | Feb 2004 | B2 |
6691216 | Nguyen | Feb 2004 | B2 |
6691430 | Saito et al. | Feb 2004 | B2 |
6692165 | Tanaka et al. | Feb 2004 | B2 |
6694224 | Ramanan | Feb 2004 | B2 |
6695922 | Kitano et al. | Feb 2004 | B2 |
6703316 | Inoue et al. | Mar 2004 | B2 |
6706321 | Nishiya et al. | Mar 2004 | B2 |
6709174 | Yamamoto et al. | Mar 2004 | B2 |
6709523 | Toshima et al. | Mar 2004 | B1 |
6712579 | Fujii et al. | Mar 2004 | B2 |
6713120 | Fukuda | Mar 2004 | B2 |
6713239 | Toshima et al. | Mar 2004 | B2 |
6715943 | Nagamine | Apr 2004 | B2 |
6716478 | Kitano et al. | Apr 2004 | B2 |
6726771 | Ueda et al. | Apr 2004 | B2 |
6730599 | Inada et al. | May 2004 | B2 |
6736556 | Kanagawa et al. | May 2004 | B2 |
6744020 | Shirakawa et al. | Jun 2004 | B2 |
6749351 | Sanada et al. | Jun 2004 | B2 |
6749688 | Tateyama et al. | Jun 2004 | B2 |
6752543 | Fukutomi et al. | Jun 2004 | B2 |
6752544 | Sanada et al. | Jun 2004 | B2 |
6752872 | Inada et al. | Jun 2004 | B2 |
6753508 | Shirakawa | Jun 2004 | B2 |
6761125 | Kitano et al. | Jul 2004 | B2 |
6768930 | Oh | Jul 2004 | B2 |
6770424 | Mandal et al. | Aug 2004 | B2 |
6773510 | Kitano et al. | Aug 2004 | B2 |
6775456 | Matsuura | Aug 2004 | B2 |
6780461 | Gurer et al. | Aug 2004 | B2 |
6780795 | Suzuki et al. | Aug 2004 | B2 |
6790283 | Hayashi et al. | Sep 2004 | B2 |
6790286 | Nishimura et al. | Sep 2004 | B2 |
6790287 | Shiga et al. | Sep 2004 | B2 |
6790291 | Kimura | Sep 2004 | B2 |
6793769 | Kajino et al. | Sep 2004 | B2 |
6796054 | Minami et al. | Sep 2004 | B2 |
6799939 | Lowrance et al. | Oct 2004 | B2 |
6805769 | Okuda et al. | Oct 2004 | B2 |
6807452 | Mukuta et al. | Oct 2004 | B2 |
6807455 | Yoshida et al. | Oct 2004 | B2 |
6808566 | Kitano et al. | Oct 2004 | B2 |
6809036 | Liu | Oct 2004 | B2 |
6811613 | Kitano et al. | Nov 2004 | B2 |
6811962 | Yoshihara et al. | Nov 2004 | B2 |
6814507 | Inagaki | Nov 2004 | B2 |
6814809 | Matsushita et al. | Nov 2004 | B2 |
6815647 | Tanoue et al. | Nov 2004 | B2 |
6817790 | Toshima et al. | Nov 2004 | B2 |
6821550 | Deguchi et al. | Nov 2004 | B2 |
6822413 | Simondet et al. | Nov 2004 | B2 |
6823880 | Sakashita et al. | Nov 2004 | B2 |
6824616 | Kitano et al. | Nov 2004 | B2 |
6826214 | Nomoto | Nov 2004 | B2 |
6827782 | Goto et al. | Dec 2004 | B2 |
6830774 | Hayashi et al. | Dec 2004 | B2 |
6832863 | Sugimoto et al. | Dec 2004 | B2 |
6834210 | Tateyama et al. | Dec 2004 | B2 |
6837631 | Nakano et al. | Jan 2005 | B2 |
6837632 | Koyama et al. | Jan 2005 | B2 |
6841031 | Iwata et al. | Jan 2005 | B2 |
6841342 | Nishi et al. | Jan 2005 | B2 |
6843259 | Nagamine | Jan 2005 | B2 |
6848625 | Takekuma et al. | Feb 2005 | B2 |
6851872 | Okubo et al. | Feb 2005 | B1 |
6860945 | Kobayashi et al. | Mar 2005 | B2 |
6868888 | Adachi | Mar 2005 | B2 |
6869234 | Sanada et al. | Mar 2005 | B2 |
6869640 | Yoshihara et al. | Mar 2005 | B2 |
6872256 | Kitano et al. | Mar 2005 | B2 |
6874513 | Yamagata et al. | Apr 2005 | B2 |
6878216 | Fujishima | Apr 2005 | B2 |
6878303 | Okamoto | Apr 2005 | B2 |
6878401 | Nishijima et al. | Apr 2005 | B2 |
6878501 | Hatakeyama et al. | Apr 2005 | B2 |
6884294 | Minami et al. | Apr 2005 | B2 |
6885467 | Du-Nour et al. | Apr 2005 | B2 |
6889105 | Mukuta et al. | May 2005 | B2 |
6893171 | Fukutomi et al. | May 2005 | B2 |
6893513 | Michaluk et al. | May 2005 | B2 |
6893805 | Iseki et al. | May 2005 | B2 |
6896466 | Nishimura et al. | May 2005 | B2 |
7255747 | Ishikawa et al. | Aug 2007 | B2 |
20030040193 | Bailey et al. | Feb 2003 | A1 |
20040091349 | Tabrizie et al. | May 2004 | A1 |
20060134330 | Ishikawa et al. | Jun 2006 | A1 |
20060182536 | Rice et al. | Aug 2006 | A1 |
Number | Date | Country |
---|---|---|
3790259 | Nov 1986 | DE |
1 114 882 | Jul 2001 | EP |
07235473 | Sep 1995 | JP |
10006757 | Jan 1998 | JP |
11279797 | Oct 1999 | JP |
05-003151 | Jan 2003 | JP |
2004-013965 | Feb 2004 | KR |
WO 0012958 | Mar 2000 | WO |
Number | Date | Country | |
---|---|---|---|
20060130751 A1 | Jun 2006 | US |
Number | Date | Country | |
---|---|---|---|
60639109 | Dec 2004 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 11112281 | Apr 2005 | US |
Child | 11344565 | US |