The present invention relates in general to integrated circuit packaging, and more particularly to an improved process for fabricating a leadless plastic chip carrier which includes a post mold etch back step and unique contact pad and die attach pad design features.
According to well known prior art IC (integrated circuit) packaging methodologies, semiconductor dice are singulated and mounted using epoxy or other conventional means onto respective die pads (attach paddles) of a leadframe strip. Traditional QFP (Quad Flat Pack) packages incorporate inner leads which function as lands for wire bonding the semiconductor die bond pads. These inner leads typically require mold locking features to ensure proper positioning of the leadframe strip during subsequent molding to encapsulate the package. The inner leads terminate in outer leads that are bent down to contact a mother board, thereby limiting the packaging density of such prior art devices.
In order to overcome these and other disadvantages of the prior art, the Applicants previously developed a Leadless Plastic Chip Carrier (LPCC). According to Applicants' LPCC methodology, a leadframe strip is provided for supporting up to several hundred devices. Singulated IC dice are placed on the strip die attach pads using conventional die mount and epoxy techniques. After curing of the epoxy, the dice are gold wire bonded to peripheral internal leads. The leadframe strip is then molded in plastic or resin using a modified mold wherein the bottom cavity is a flat plate. In the resulting molded package, the die pad and leadframe inner leads are exposed. By exposing the bottom of the die attach pad, mold delamination at the bottom of the die paddle is eliminated, thereby increasing the moisture sensitivity performance. Also, thermal performance of the IC package is improved by providing a direct thermal path from the exposed die attach pad to the motherboard. By exposing the leadframe inner leads, the requirement for mold locking features is eliminated and no external lead standoff is necessary, thereby increasing device density and reducing package thickness over prior art methodologies. The exposed inner leadframe leads function as solder pads for motherboard assembly such that less gold wire bonding is required as compared to prior art methodologies, thereby improving electrical performance in terms of board level parasitics and enhancing package design flexibility over prior art packages (i.e. custom trim tools and form tools are not required). These and several other advantages of Applicants' own prior art LPCC process are discussed in Applicants' co-pending patent application Ser. No. 09/095,803, the contents of which are incorporated herein by reference.
Applicants' LPCC production methodology utilizes saw singulation to isolate the perimeter I/O row as well as multi-row partial lead isolation. Specifically, the leadframe strip is mounted to a wafer saw ring using adhesive tape and saw-singulated using a conventional wafer saw. The singulation is guided by a pattern of fiducial marks on the bottom side of the leadframe strip. Also, special mold processing techniques are used to prevent the mold flow from bleeding onto the functional pad area and inhibiting electrical contact. Specifically, the exposed die pad surface is required to be deflashed after molding to remove any molding compound residue and thereby allow the exposed leads and die attach pad to serve as solder pads for attachment to the motherboard.
According to Applicant's co-pending U.S. patent application Ser. No. 09/288,352, the contents of which are incorporated herein by reference, an etch back process is provided for the improved manufacture of the LPCC IC package. The leadframe strip is first subjected to a partial etch on one or both of the top and bottom surfaces in order to create a pattern of contact leads (pads) and a die attach pad (paddle). After wire bonding the contacts to a singulated semiconductor die, followed by overmolding and curing of the mold, the leadframe strip is exposed to a second full etch immersion for exposing the contact pads in an array pattern (i.e. multi-row) or perimeter pattern (i.e. single row), as well as the die attach pad. In the case of a package with multi-row I/O leads, this etch back step eliminates the requirement for two additional saw singulation operations (i.e. to sever the inner leads from the outer leads), and in both the single-row and multi-row configurations, the etch back step eliminates post mold processing steps (e.g. mold deflashing) and ensures superior device yield over the processing technique set forth in Applicants' prior application Ser. No. 09/095,803. Additionally, using this technique allows for higher I/O pad density and also allows for pad standoff from the package bottom which reduces stress in the solder joint during PCB temp cycling. Further, the technique allows for the use of a pre-singulation strip testing technique given that the electrical I/O pads are now isolated from each other and testing in strip can take place. This feature greatly increased the handling and throughput of the test operation.
Other prior art references teach the concepts of etching back a sacrificial substrate layer to expose contact pads and die attach paddle, such as U.S. Pat. No. 4,530,152 (Roche et al); U.S. Pat. No. 5,976,912 (Fukutomi, et al); U.S. Pat. No. 6,001,671 (Fjelstad) and Japanese patent application no. 59-208756 (Akiyama).
According to the present invention, Applicant's etch-back LPCC process has been modified to provide additional design features. Firstly, an etch barrier is provided as the first layer of the contact pads and die attach pad, and the contact pads are formed to a “rivet” head shape for improved interlocking and the die attach pad is formed with an interlock pattern for improved alignment with the semiconductor die. Improved electrical performance is enjoyed over the above discussed prior art designs by incorporation of a ground ring on the die attach pad to which multiple ground pads on the die are parallel bonded. The incorporation of a ground ring on the die attach pad provides a constant distance between the ground ring and the ground pads to which the ground ring is wire bonded. The ground ring is then bonded out to only one of the external I/O pads.
According to a further embodiment of the invention, two concentric rings are provided to allow for both power and ground using only a single I/O pad for each.
According to an additional embodiment, an etch down cavity is provided for solder ball attachment.
A detailed description of the invention is provided herein below with reference to the following drawings, in which:
Applicants' prior Leadless Plastic Chip Carrier with Etch Back Singulation (LPCCEBS) process as described in copending application Ser. No. 09/288,352 is an improvement over Applicants' LPCC process as set forth in co-pending application Ser. No. 09/095,803. The present invention relates to an improvement in Applicants' prior LPCC methodology. Before describing details of the improvement according to the present invention, reference will be made to
With reference to
The leadframe strip 1100 is subjected to a partial etch on both top and bottom sides (
A singulated semiconductor die 206 is conventionally mounted via epoxy (or other means) to the die attach pad 202, and the epoxy is cured. Gold wires 205 are then bonded between the semiconductor die 206 and peripheral leads or contacts 203. The leadframe 100 is then molded using a modified mold with the bottom cavity being a flat plate, and subsequently cured, as discussed in Applicants' application Ser. No. 09/095,803. The leadframe 1100 after the foregoing steps is as shown in
Next, rather than post-mold deflashing, as performed according to Applicants' prior methodology, a wet film layer of photoresist 402 is printed onto the bottom of leadframe 100 so as to cover portions of the bottom surface which are to be protected from etchant (i.e. positive photoresist). The photoresist is then developed (cured) using conventional means (FIG. 1E).
The leadframe 100 is then subjected to a final etching via full immersion (
The photoresist layer 402 is then stripped using conventional means (FIG. 1G), resulting in small protrusions below the molded body for contact pads 203. After this etch back step, the leadframe strip 100 is coated with either electroless gold or solder dip to facilitate pad soldering (FIG. 1H). Alternatively, barrel plated solder or chemically passivated bare copper may be used for terminal finishing.
At this stage of manufacture, the pads 203 and 202 are fully isolated and exposed. Singulation of the individual units from the full leadframe array strip 100 may then be performed either by saw singulation or die punching (FIG. 1I).
The embodiment of
Applicants' LPCC fabrication process may alternatively utilize a single side first partial etch, as shown in
A layer of negative photoresist 504 is applied and patterned for a “second level” connect (FIG. 5E). A pre-etch step is then performed (
Next, the semiconductor 206 is attached to the pad 202, gold wire bonds 203 are attached to the multi-row leads 203 and the structure is encapsulated as discussed above in mold 401, such that the contact pad and attach pad protrusions remain exposed (FIG. 5H). A final etch back is performed (
Having thus described Applicants' prior LPCC and LPCCEBS methodologies, reference will now be made to
With reference to
The leadframe strip 100 is covered with a photoresist mask 102 (
One feature of the present invention is the deliberate deposition of the photoresist mask 102 in only a very thin layer (e.g. 2 mils) such that each contact pad 203 is plated up into a columnar shape as it flows over the photoresist mask, resulting in a “mushroom cap” or rivet shape (FIGS. 6D and 6F). The shape of the contact pads 203 is such that they are capable of being locked into the mold body thereby providing superior board mount reliability. It is also contemplated that a “funnel” shape may be provided for the contact pads 203 by incorporating an angle on the photoresist mask.
As shown in
In plating Options B-1 and B-2, the initial flash Cu deposition is omitted, and in Options C-1 and C-2 the etch barrier of Au and subsequent Ni deposition are replaced by an etch barrier of tin (100-300 microinches).
A singulated semiconductor die 206 is conventionally mounted via epoxy (or other means) to the die attach pad 202, and the epoxy is cured. Gold wires 205 are then bonded between the semiconductor die 206 and peripheral leads or contacts 203. The leadframe 100 is then molded using a modified mold with the bottom cavity being a flat plate, and subsequently cured, as discussed in Applicants' application Ser. No. 09/095,803. The leadframe 100 after the foregoing steps is as shown in
The leadframe 100 is then subjected to a final alkaline etching via full immersion (
The fabrication process of the present invention may alternatively omit the solder ball attachment step, as shown in Options B and C.
Other embodiments of the invention are possible. For example, the two rings may be present, one being a power ring and the other being a ground ring. All such embodiments are believed to be within the sphere and scope of the invention as set forth in the claims appended hereto.
This is a continuation-in-part of U.S. patent application Ser. No. 09/288,352, filed Apr. 8, 1999, now U.S. Pat. No. 6,498,099 which is a continuation-in-part of U.S. patent application Ser. No. 09/095,803, filed Jun. 10, 1998 now U.S. Pat. No. 6,229,200.
Number | Name | Date | Kind |
---|---|---|---|
4530152 | Roche et al. | Jul 1985 | A |
4685998 | Quinn et al. | Aug 1987 | A |
5066831 | Spielberger et al. | Nov 1991 | A |
5293072 | Tsuji et al. | Mar 1994 | A |
5444301 | Song et al. | Aug 1995 | A |
5457340 | Templeton, Jr. et al. | Oct 1995 | A |
5710695 | Manteghi | Jan 1998 | A |
5777382 | Abbott et al. | Jul 1998 | A |
5900676 | Kweon et al. | May 1999 | A |
5976912 | Fukutomi et al. | Nov 1999 | A |
6001671 | Fjelstad | Dec 1999 | A |
6057601 | Lau et al. | May 2000 | A |
6081029 | Yamaguchi | Jun 2000 | A |
6093584 | Fjelstad | Jul 2000 | A |
6194786 | Orcutt | Feb 2001 | B1 |
6229200 | Mclellan et al. | May 2001 | B1 |
6238952 | Lin | May 2001 | B1 |
6294830 | Fjelstad | Sep 2001 | B1 |
6306685 | Liu et al. | Oct 2001 | B1 |
6459163 | Bai | Oct 2002 | B1 |
6498099 | McLellan et al. | Dec 2002 | B1 |
6528877 | Ernst et al. | Mar 2003 | B2 |
6545347 | McClellan | Apr 2003 | B2 |
6585905 | Fan et al. | Jul 2003 | B1 |
6586677 | Glenn | Jul 2003 | B2 |
6635957 | Kwan et al. | Oct 2003 | B2 |
6821821 | Fjelstad | Nov 2004 | B2 |
20030015780 | Kang et al. | Jan 2003 | A1 |
Number | Date | Country |
---|---|---|
59-208756 | Nov 1984 | JP |
SHO 59-208756 | Nov 1984 | JP |
Number | Date | Country | |
---|---|---|---|
20010008305 A1 | Jul 2001 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 09288352 | Apr 1999 | US |
Child | 09802678 | US | |
Parent | 09095803 | Jun 1998 | US |
Child | 09288352 | US |