Manufacturing method of semiconductor device

Abstract

An adhesive layer of which thickness is over 25 μm and a dicing tape are laminated on a rear surface of a semiconductor wafer. The semiconductor wafer is cut together with a part of the adhesive layer by using a first blade of which cutting depth reaches the adhesive layer. The adhesive layer is cut together with a part of the dicing tape by using a second blade of which cutting depth reaches the dicing tape and of which width is narrower than the first blade. A semiconductor element sectioned by cutting the semiconductor wafer with the adhesive layer is picked up from the dicing tape, and is adhered on another semiconductor element or a circuit board.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view showing a configuration of a semiconductor device prepared by a manufacturing method of an embodiment.

FIG. 2 is a sectional view showing a modified example of the semiconductor device shown in FIG. 1.

FIG. 3A, FIG. 3B, and FIG. 3C are sectional views showing a manufacturing process of a semiconductor device according to a first embodiment.

FIG. 4 is a view showing an example of a relation between room temperature modulus of elasticity before curing of an adhesive layer applied in the first embodiment and a burr length in a dicing process.

FIG. 5A, FIG. 5B, and FIG. 5C are sectional views showing a manufacturing process of a semiconductor device according to a second embodiment.

Claims

1. A manufacturing method of a semiconductor device, comprising: sequentially laminating an adhesive layer of which thickness is over 25 μm and a dicing tape on a rear surface of a semiconductor wafer having plural element regions;cutting the semiconductor wafer in accordance with the plural element regions together with a part of the adhesive layer by using a first blade of which cutting depth reaches the adhesive layer;cutting the adhesive layer together with a part of the dicing tape by using a second blade of which cutting depth reaches the dicing tape and having a narrower width than the first blade;picking up a semiconductor element sectioned by cutting the semiconductor wafer with the adhesive layer, from the dicing tape; andadhering the picked up semiconductor element on a device constructing base via the adhesive layer laminated on a rear surface of the semiconductor element.

2. The manufacturing method of the semiconductor device according to claim 1, wherein the adhesive layer has room temperature modulus of elasticity in a range of not less than 100 MPa nor more than 3000 MPa.

3. The manufacturing method of the semiconductor device according to claim 1, wherein the adhesive layer is cooled at a time of cutting in order that modulus of elasticity of the adhesive layer at the time of cutting is in a range of not less than 100 MPa nor more than 3000 MPa.

4. The manufacturing method of the semiconductor device according to claim 1, wherein a thickness of the adhesive layer is in a range of not less than 50 μm nor more than 150 μm.

5. The manufacturing method of the semiconductor device according to claim 1, wherein a thickness of an uncut portion of the adhesive layer by the first blade is in a range of 20 μm or less.

6. The manufacturing method of the semiconductor device according to claim 1, wherein the device constructing base is composed of a circuit board or another semiconductor element.

7. The manufacturing method of the semiconductor device according to claim 1, further comprising: adhering a first semiconductor element as the device constructing base on a circuit board;electrically connecting a connection part of the circuit board and an electrode part of the first semiconductor element via a first bonding wire; andadhering the semiconductor element as a second semiconductor element on the first semiconductor element via the adhesive layer.

8. The manufacturing method of the semiconductor device according to claim 7, wherein a end portion connected to the first semiconductor element of the first bonding wire is embedded into the adhesive layer.

9. The manufacturing method of the semiconductor device according to claim 8, wherein the adhesive layer includes an insulating resin layer softening or melting at adhesive temperature of the second semiconductor element, and the first bonding wire is apart away from a lower surface of the second semiconductor element based on a thickness of the adhesive layer.

10. The manufacturing method of the semiconductor device according to claim 8, wherein the adhesive layer includes a first insulating resin layer disposed at the first semiconductor element side and softening or melting at adhesive temperature of the second semiconductor element, and a second insulating resin layer disposed at the second semiconductor element side and maintaining a layer state for the adhesive temperature of the second semiconductor element, and the end portion of the first bonding wire is embedded into the first insulating resin layer.

11. A manufacturing method of a semiconductor device, comprising: sequentially laminating an adhesive layer of which thickness is over 25 μm and a dicing tape on a rear surface of a semiconductor wafer having plural element regions;cutting a part of the semiconductor wafer in accordance with the plural element regions by using a first blade of which cutting depth is within the semiconductor wafer;cutting the semiconductor wafer together with a part of the adhesive layer by using a second blade of which cutting depth reaches the adhesive layer and having a narrower width than the first blade;cutting the adhesive layer together with a part of the dicing tape by using a third blade of which cutting depth reaches the dicing tape and having a narrower width than the second blade;picking up a semiconductor element sectioned by cutting the semiconductor wafer with the adhesive layer, from the dicing tape; andadhering the picked up semiconductor element on a device constructing base via the adhesive layer laminated on a rear surface of the semiconductor element.

12. The manufacturing method of the semiconductor device according to claim 11, wherein the adhesive layer has room temperature modulus of elasticity in a range of not less than 100 MPa nor more than 3000 MPa.

13. The manufacturing method of the semiconductor device according to claim 11, wherein a thickness of the adhesive layer is in a range of not less than 50 μm nor more than 150 μm.

14. The manufacturing method of the semiconductor device according to claim 11, wherein a thickness of an uncut portion of the semiconductor wafer by the first blade is in a range of 10 μm or less.

15. The manufacturing method of the semiconductor device according to claim 11, wherein a thickness of an uncut portion of the adhesive layer by the second blade is in a range of 20 μm or less.

16. The manufacturing method of the semiconductor device according to claim 11, wherein the device constructing base is composed of a circuit board or another semiconductor element.

17. The manufacturing method of the semiconductor device according to claim 11, further comprising: adhering a first semiconductor element as the device constructing base on a circuit board;electrically connecting a connection part of the circuit board and an electrode part of the first semiconductor element via a first bonding wire; andadhering the semiconductor element as a second semiconductor element on the first semiconductor element via the adhesive layer.

18. The manufacturing method of the semiconductor device according to claim 17, wherein a end portion connected to the first semiconductor element of the first bonding wire is embedded into the adhesive layer.

19. The manufacturing method of the semiconductor device according to claim 18, wherein the adhesive layer includes an insulating resin layer softening or melting at adhesive temperature of the second semiconductor element, and the first bonding wire is apart from a lower surface of the second semiconductor element based on a thickness of the adhesive layer.

20. The manufacturing method of the semiconductor device according to claim 18, wherein the adhesive layer includes a first insulating resin layer disposed at the first semiconductor element side and softening or melting at the adhesive temperature of the second semiconductor element, and a second insulating resin layer disposed at the second semiconductor element side and maintaining a layer state for the adhesive temperature of the second semiconductor element, and the end portion of the first bonding wire is embedded into the first insulating resin layer.