BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a cross-sectional side view showing a conventional two-stage stacked semiconductor device using PoP;
FIG. 2 is a cross-sectional side view explanatory of a conventional internally stacked semiconductor device;
FIG. 3 is a cross-sectional side view explanatory of a two-stage stacked semiconductor device using PiP;
FIG. 4 is a top view showing a sub-circuit substrate according to a first embodiment of the present invention;
FIG. 5 is a bottom view of the sub-circuit substrate according to the first embodiment of the present invention;
FIG. 6 is a side view of the sub-circuit substrate according to the first embodiment of the present invention;
FIG. 7 is an enlarged cross-sectional view showing a flip chip connection portion between the sub-circuit substrate and a semiconductor element according to the first embodiment of the present invention;
FIG. 8 is a cross-sectional side view showing a semiconductor device having a two-stage stacked structure according to the first embodiment of the present invention; and
FIG. 9 is a cross-sectional side view showing a semiconductor device having a passive component according to a second embodiment of the present invention.