Claims
- 1. A method for forming an insulation layer over a substrate disposed in a substrate processing chamber, the method comprising:
flowing a process gas comprising ozone and an organosilane into the substrate processing chamber; heating the substrate to a temperature of less than about 250° C. to form a carbon-doped silicon oxide layer over the substrate; curing the carbon-doped silicon oxide layer after it is formed over the substrate; and densifying the carbon-doped silicon oxide layer after said curing.
- 2. The method of claim 1 wherein said densifying includes subjecting the carbon-doped silicon oxide layer to a plasma.
- 3. The method of claim 2 wherein said plasma contains helium (He), nitrogen (N2), or Argon (Ar).
- 4. The method of claim 3 wherein said plasma is an N2 plasma.
- 5. The method of claim 4 wherein the substrate is exposed to said N2 plasma for between 1 and 10 minutes.
- 6. The method of claim 5 wherein said N2 plasma is sustained by radio frequency (RF) energy.
- 7. The method of claim 6 wherein said RF energy is delivered at a power of between 500 and 900 watts.
- 8. The method of claim 6 wherein said RF energy is delivered at a frequency of between 100 kilohertz and 100 megahertz.
- 9. The method of claim 6 wherein said N2 plasma has a pressure of between about 1.2 and 4 torr.
- 10. The method of claim 1 wherein the organosilane precursor is either tetramethylsilane or trimethylsilane the organosilane precursor is selected from the group of methylsilane, dimethylsilane, trimethylsilane, tetramethylsilane and phenylmethylsilane.
- 11. The method of claim 1 wherein the dielectric constant of said carbon-doped silicon oxide layer is less than or equal to 3.0.
- 12. The method of claim 1 wherein densifying includes heating the substrate.
- 13. The method of claim 12 wherein the substrate is heated to a temperature of between approximately 350° C. and 450° C.
- 14. A substrate processing system comprising:
a housing defining a process chamber; a substrate holder, adapted to hold a substrate during substrate processing; a heater, operatively coupled to heat said substrate holder; a gas delivery system configured to introduce gases into said process chamber; a power supply, configured to deliver energy to said process chamber; a controller for controlling said gas delivery system and said heater; and a memory coupled to said controller comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of said controller, said computer-readable program including
a first set of instructions to control said gas delivery system to flow a process gas comprising ozone and an organosilane having at least one silicon-carbon bond into the substrate processing chamber and control said heater to heat the substrate holder to a temperature of between 100-250° C.; a second set of instructions to control said heater to cure the carbon-doped silicon oxide layer after it is formed over the substrate; and a third set of instructions to control said gas delivery system and said power supply to generate a plasma for densifying the carbon-doped silicon oxide layer after said curing.
- 15. A computer readable storage medium having a computer-readable program embodied therein for directing operation of a substrate processing system including a process chamber; a substrate holder; a heater, operatively coupled to heat said substrate holder; a gas delivery system configured to introduce gases into said process chamber, a power supply, configured to deliver energy to said process chamber, said computer-readable program including instructions for operating said substrate processing system to form an insulation layer over a substrate disposed in the processing chamber in accordance with the following:
flowing a process gas comprising ozone and an organosilane into the substrate processing chamber; heating the substrate to a temperature of less than about 250° C. to form a carbon-doped silicon oxide layer over the substrate; curing the carbon-doped silicon oxide layer after it is formed over the substrate; and densifying the carbon-doped silicon oxide layer after said curing.
Priority Claims (1)
Number |
Date |
Country |
Kind |
99402072.5 |
Aug 1999 |
EP |
|
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application is related to concurrently filed U.S. application Ser. No. ______, entitled “THERMAL CVD PROCESS FOR DEPOSITING A LOW DIELECTRIC CONSTANT CARBON-DOPED SILICON OXIDE FILM,” having Li-Qun Xia, Fabrice Geiger, Frederic Gaillard, Ellie Yieh and Tian Lim as coinventors; and to concurrently filed U.S. application Ser. No. ______, entitled “METHOD AND APPARATUS TO ENHANCE PROPERTIES OF Si—O—C LOW K FILMS,” having Li-Qun Xia, Frederic Gaillard, Ellie Yieh and Tian H. Lim as coinventors; and to concurrently filed U.S. Application No. ______, entitled “POST-DEPOSITION TREATMENT TO ENHANCE PROPERTIES OF Si—O—C LOW K FILMS,” having Li-Qun Xia, Frederic Gaillard, Ellie Yieh and Tian H. Lim as coinventors; and to concurrently filed U.S. Application No. ______ entitled “LID COOLING MECHANISM FOR OPTIMIZED DEPOSITION OF LOW-K DIELECTRIC USING TRI METHYLSILANE-OZONE BASED PROCESSES,” having Himansu Pokharna, Li-Qun Xia and Tian-Hoe Lim as coinventors. Each of the ______, ______, ______ and ______ applications listed above are assigned to Applied Materials, Inc., the assignee of the present invention and each of the above-referenced applications are hereby incorporated by reference.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09633495 |
Aug 2000 |
US |
Child |
10192274 |
Jul 2002 |
US |