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ELECTRICITY
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Electric elements
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MAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
Current Industry
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Thin magnetic films
Sub Industries
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Antiferromagnetic thin films
H01F10/005
organic or organo-metallic films
H01F10/007
ultrathin or granular films
H01F10/06
characterised by the coupling or physical contact with connecting or interacting conductors
H01F10/08
characterised by magnetic layers
H01F10/10
characterised by the composition
H01F10/12
being metal or alloys
H01F10/123
having a L10 crystallographic structure
H01F10/126
containing rare earth metals
H01F10/13
Amorphous metallic alloys
H01F10/131
containing iron or nickel
H01F10/132
containing cobalt
H01F10/133
containing rare earth metals
H01F10/135
containing transition metals
H01F10/136
containing iron
H01F10/137
containing cobalt
H01F10/138
containing nanocrystallites
H01F10/14
containing iron or nickel
H01F10/142
containing Si
H01F10/145
containing Al
H01F10/147
with lattice under strain
H01F10/16
containing cobalt
H01F10/18
being compounds
H01F10/187
Amorphous compounds
H01F10/193
Magnetic semiconductor compounds
H01F10/1933
Perovskites
H01F10/1936
Half-metallic
H01F10/20
Ferrites
H01F10/205
Hexagonal ferrites
H01F10/22
Orthoferrites
H01F10/24
Garnets
H01F10/245
Modifications for enhancing interaction with electromagnetic wave energy
H01F10/26
characterised by the substrate or intermediate layers
H01F10/265
Magnetic multilayers non exchange-coupled
H01F10/28
characterised by the composition of the substrate
H01F10/30
characterised by the composition of the intermediate layers
H01F10/32
Spin-exchange-coupled multilayers
H01F10/3204
Exchange coupling of amorphous multilayers
H01F10/3209
Exchange coupling of garnet multilayers
H01F10/3213
Exchange coupling of magnetic semiconductor multilayers
H01F10/3218
Exchange coupling of magnetic films via an antiferromagnetic interface
H01F10/3222
Exchange coupled hard/soft multilayers
H01F10/3227
Exchange coupling via one or more magnetisable ultrathin or granular films
H01F10/3231
via a non-magnetic spacer
H01F10/3236
made of a noble metal, e.g.(Co/Pt) n multilayers having perpendicular anisotropy
H01F10/324
Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer
H01F10/3245
the spacer being superconductive
H01F10/325
the spacer being noble metal
H01F10/3254
the spacer being semiconducting or insulating
H01F10/3259
Spin-exchange-coupled multilayers comprising at least a nano-oxide layer [NOL]
H01F10/3263
the exchange coupling being symmetric
H01F10/3268
the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface
H01F10/3272
by use of anti-parallel coupled [APC] ferromagnetic layers
H01F10/3277
by use of artificial ferrimagnets [AFI] only
H01F10/3281
only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure
H01F10/3286
Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
H01F10/329
Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current
H01F10/3295
Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers
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Force sensor
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Issue date
Apr 30, 2024
Daegu Gyeongbuk Institute of Science & Technology
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H01 - BASIC ELECTRIC ELEMENTS
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Issue date
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Issue date
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Issue date
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B82 - NANO-TECHNOLOGY
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Issue date
Apr 23, 2024
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Issue date
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Issue date
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Issue date
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Issue date
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H01 - BASIC ELECTRIC ELEMENTS
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Two-dimensional Dirac half-metal ferromagnets and ferromagnetic mat...
Patent number
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Issue date
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The Trustees of the California State University
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B82 - NANO-TECHNOLOGY
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Patent number
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Issue date
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Patent number
11,950,431
Issue date
Apr 2, 2024
United Microelectronics Corp.
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Low loss power ferrites and method of manufacture
Patent number
11,945,753
Issue date
Apr 2, 2024
ROGERS CORPORATION
Yajie Chen
C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
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Semiconductor device and method for fabricating the same
Patent number
11,950,513
Issue date
Apr 2, 2024
United Microelectronics Corp.
Hui-Lin Wang
H01 - BASIC ELECTRIC ELEMENTS
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Magnetic memory using spin-orbit torque
Patent number
11,944,015
Issue date
Mar 26, 2024
EVERSPIN TECHNOLOGIES, INC.
Han-Jong Chia
H01 - BASIC ELECTRIC ELEMENTS
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Magnetic device
Patent number
11,935,677
Issue date
Mar 19, 2024
Samsung Electronics Co., Ltd.
Younghyun Kim
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Magnon spin valve, magnon sensor, magnon field effect transistor, m...
Patent number
11,937,513
Issue date
Mar 19, 2024
Institute of Physics, Chinese Academy of Sciences
Xiufeng Han
H01 - BASIC ELECTRIC ELEMENTS
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Reduction of capping layer resistance area product for magnetic dev...
Patent number
11,930,716
Issue date
Mar 12, 2024
Taiwan Semiconductor Manufacturing Company, Ltd
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Minimal thickness synthetic antiferromagnetic (SAF) structure with...
Patent number
11,930,717
Issue date
Mar 12, 2024
Taiwan Semiconductor Manufacturing Company, Ltd
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Magnetoresistive sensor element with synthetic antiferromagnet biasing
Patent number
11,921,172
Issue date
Mar 5, 2024
NVE Corporation
Joe Davies
H01 - BASIC ELECTRIC ELEMENTS
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Magnetic heterojunction structure and method for controlling and ac...
Patent number
11,922,986
Issue date
Mar 5, 2024
SHAN DONG UNIVERSITY
Shishen Yan
G11 - INFORMATION STORAGE
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Insertion layers for perpendicularly magnetized Heusler layers with...
Patent number
11,925,124
Issue date
Mar 5, 2024
Samsung Electronics Co., Ltd.
Jaewoo Jeong
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High retention storage layer using ultra-low RA MgO process in perp...
Patent number
11,925,125
Issue date
Mar 5, 2024
Integrated Silicon Solution, (Cayman) Inc.
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G11 - INFORMATION STORAGE
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Magnetic memory device and magnetic memory apparatus
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11,922,985
Issue date
Mar 5, 2024
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Syuta Honda
G11 - INFORMATION STORAGE
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Patent number
11,914,008
Issue date
Feb 27, 2024
TDK Corporation
Keisuke Uchida
H01 - BASIC ELECTRIC ELEMENTS
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Interlayer exchange coupled multiplier
Patent number
11,917,924
Issue date
Feb 27, 2024
Ceremorphic, Inc.
Venkat Mattela
G06 - COMPUTING CALCULATING COUNTING
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Magnetic structure for magnetic device
Patent number
11,910,725
Issue date
Feb 20, 2024
Imec VZW
Bart Vermeulen
H01 - BASIC ELECTRIC ELEMENTS
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Memory device and manufacturing method thereof
Patent number
11,910,621
Issue date
Feb 20, 2024
Taiwan Semiconductor Manufacturing Co., Ltd
Jau-Yi Wu
H01 - BASIC ELECTRIC ELEMENTS
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Perpendicular MTJ element having a cube-textured reference layer an...
Patent number
11,910,721
Issue date
Feb 20, 2024
Yimin Guo
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BiSbX (012) layers having increased operating temperatures for SOT...
Patent number
11,908,496
Issue date
Feb 20, 2024
Western Digital Technologies, Inc.
Quang Le
G11 - INFORMATION STORAGE
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last 30 patents
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SPIN VALVE DEVICE AND METHOD FOR FORMING A SPIN VALVE DEVICE
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20240133982
Publication date
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H01 - BASIC ELECTRIC ELEMENTS
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Publication number
20240130247
Publication date
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G01 - MEASURING TESTING
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20240120923
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G06 - COMPUTING CALCULATING COUNTING
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20240112840
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C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
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20240107893
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G11 - INFORMATION STORAGE
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H01 - BASIC ELECTRIC ELEMENTS
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20240099151
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H01 - BASIC ELECTRIC ELEMENTS
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G11 - INFORMATION STORAGE
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H01 - BASIC ELECTRIC ELEMENTS
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H01 - BASIC ELECTRIC ELEMENTS
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H01 - BASIC ELECTRIC ELEMENTS
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H01 - BASIC ELECTRIC ELEMENTS
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H01 - BASIC ELECTRIC ELEMENTS
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H01 - BASIC ELECTRIC ELEMENTS
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G11 - INFORMATION STORAGE
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Publication date
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G06 - COMPUTING CALCULATING COUNTING
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Publication date
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H01 - BASIC ELECTRIC ELEMENTS
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H01 - BASIC ELECTRIC ELEMENTS
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Publication date
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20240040801
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Publication date
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H01 - BASIC ELECTRIC ELEMENTS
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Publication date
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H01 - BASIC ELECTRIC ELEMENTS
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Publication number
20240003996
Publication date
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H01 - BASIC ELECTRIC ELEMENTS
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Publication number
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Publication date
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Western Digital Technologies, Inc.
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Publication number
20240005975
Publication date
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SONY GROUP CORPORATION
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G11 - INFORMATION STORAGE
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Publication number
20230413683
Publication date
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Taiwan Semiconductor Manufacturing Co., Ltd.
Mingyuan SONG
H01 - BASIC ELECTRIC ELEMENTS