Patent Application
20130256880
1. Field of the Invention
The present invention relates to an electrode body, and more particularly, to an electrode body in which a plurality of electrodes are formed to protrude on a base member and a wiring substrate and a semiconductor device that uses the electrode body.
Priority is claimed on Japanese Patent Application No. 2012-082930, filed Mar. 30, 2012, the content of which is incorporated herein by reference.
2. Description of Related Art
With high performance and miniaturization of systems, semiconductor devices are required to have a smaller size and high performance. Therefore, a technique called “silicon wafer direct bonding” of bonding wafers in which a plurality of minute bumps functioning as electrodes are formed has been also examined.
To electrically connect the bumps in the silicon wafer direct bonding, it is necessary to apply a load to the wafer, but the necessary load increases with the number of bumps. For example, when bumps with a diameter of about 10 μm are formed on the entire surface of a wafer of 8 inches (23.2 cm), the number of bumps is hundreds of millions, and thus the load necessary for the bonding becomes several tons.
Here, when the heights of the bumps are irregular, the load is first concentrated on the highly formed bumps, and thus there is a concern that these bumps may be damaged. For this reason, to reduce the bonding load, flattening the upper surfaces of the bumps by grinding, chemical mechanical polishing (CMP), or the like has been investigated.
In regard to this problem, Japanese Unexamined Patent Application, First Publication No. 2001-267371 discloses a method of forming minute uneven portions on the upper surfaces of the bumps using a pressing device. The formed minute uneven portions serve as crushing margins that absorb the height irregularity of the bumps, and thus the load necessary for the bonding is considered to be reduced.
According to a first aspect of the invention, an electrode body includes a base member that has a predetermined thickness; and an electrode portion that is formed on one surface of the base member in a thickness direction thereof. The electrode portion includes a basic bump formed in a substantially columnar shape to protrude on the base member and a fragile bump formed independently from the basic bump to form a metallic bond with the basic bump.
According to a second aspect of the invention, in the electrode body according to the first aspect, the base member may be formed of a semiconductor or an insulator.
According to a third aspect of the invention, in the electrode body according to the first or second aspect, the basic bump may be formed of one of gold, copper, nickel, and an alloy including at least one metal thereof. The fragile bump may be formed of one of gold, copper, nickel, tin and an alloy including at least one metal thereof.
According to a fourth aspect of the invention, in the electrode body according to any one of the first to third aspects, a surface roughness Ra of a surface of the basic bump on which the fragile bump may be formed is equal to or less than 100 nanometers.
According to a fifth aspect of the invention, in the electrode body according to any one of the first to fourth aspects, the fragile bump may be formed of a granular metal.
According to a sixth aspect of the invention, in the electrode body according to the fifth second aspect, the fragile bump may be formed by plating and the granular metal may be formed by growth of a plating nucleus.
According to a seventh aspect of the invention, in the electrode body according to any one of the first to fourth aspects, the fragile bump may be formed by one of plating, deposition, sputtering, and printing.
According to an eighth aspect of the invention, a wiring substrate includes: the electrode body according to the second aspect of the invention; and a wiring that is provided in the base member and is connected to the electrode portion.
According to a ninth aspect of the invention, a semiconductor device includes: the wiring substrate according to the eighth aspect of the invention; and a semiconductor element that is provided in the base member.
According to a tenth aspect of the invention, a semiconductor device includes: the wiring substrate according to the eighth aspect of the invention; and a semiconductor chip or a semiconductor package that is provided in the base member.
According to an eleventh aspect of the invention, a semiconductor device is formed by bonding at least two wiring substrates in which an electrode portion is formed. At least one of the wiring substrates is the wiring substrate according to the eighth aspect or the wiring substrate of the semiconductor device according to the ninth or tenth aspect.
An embodiment of the invention will be described with reference to
The base member 10 is formed of an insulator or a semiconductor and has a plate shape or a sheet shape with a predetermined thickness. Examples of the insulator and the semiconductor forming the base member 10 may include silicon, resin, ceramics, and glass. In this embodiment, a silicon wafer is used as the base member 10.
The basic bump 21 forms the basic shape of the electrode portion 20 and is formed of a conductive material such as a metal. Examples of the metal forming the basic bump 21 may include gold, copper, nickel, and an alloy including at least one of these metals.
The fragile bumps 22 are formed as a structure independent from the basic bump 21 so as to come into contact with the basic bump 21. That is, the fragile bumps 22 are not formed, for example, by deforming a part of the basic bump 21 but are independently formed on the basic bump 21. When the fragile bumps 22 are observed in an expansion manner using an electron microscope or the like, discontinuity in the structure can be confirmed. The fragile bumps 22 according to this embodiment are formed of a granular metal. As the material of the fragile bumps 22, a metal such as gold, copper, nickel, tin, an alloy including at least one of these metals, or the like can be used. The material of the basic bump 21 and the material of the fragile bumps 22 may be the same or may be different.
Since the fragile bumps 22 have a fine structure than the basic bump 21, the fragile bumps 22 are deformed more easily than the basic bump 21. Since the fragile bumps 22 form a metallic bond with the basic bump 21, the electric connection with the basic bump 21 is ensured.
A height h1 of each fragile bump is preferably set to a value equal to or greater than a height irregularity (a difference between the minimum value and the maximum value) when the basic bump is formed. Thus, when bonding is performed, as will be described below, the height irregularity of the basic bumps can be appropriately absorbed, and thus certainty of the bonding of the electrode portions can be improved.
A surface roughness Ra on the upper surface of the basic bump 21 is considered to be preferably equal to or less than 100 nanometers (nm), since the function of the fragile bumps 22 to be described below can be sufficiently exerted. Not only may the fragile bumps be formed such that granular metals overlap in one layer, but the fragile bumps may also be formed such that granular metals overlap in two or more layers, as shown in
An example of a method of manufacturing the electrode body 1 with the above-described configuration will be described.
First, resist layers 101 are formed on the base member 10. As shown in
Next, when the respective opening 102 are filled with a conductive material by plating or the like and the resist layers 101 are removed, the basic bumps 21 are completed, as shown in
Next, the upper surface of each basic bump 21 is subjected to plating. Then, the metal included in a plating solution is precipitated as nuclei on the upper surface of the basic bump 21. Thereafter, when the nuclei grow, granular metal objects are formed on the upper surface of the basic bump 21 so as to be independent from the basic bump 21. Thus, as shown in
When the basic bumps and the fragile bumps are formed of the same material and are both formed by plating, the basic bumps and the fragile bumps can be formed by a series of plating processes. However, even in this case, from the viewpoint of the fact that the fragile bumps sufficiently function, the fragile bumps are preferably formed such that the surface roughness Ra of the upper surface of the basic bumps is equal to or less than 100 nanometers (nm) by flattening the upper surfaces of the basic bumps by CMP or the like after the basic bumps are formed.
When forming of the fragile bumps 22 ends, manufacturing of the electrode body 1 including the electrode portions 20 is completed. Here, when the base member 10 is formed of an insulator, as in this embodiment, a wiring electrically connected to at least one of the electrode portions 20 may be formed in the base member 10. As the form of the wiring, the wiring may be formed in one surface or both surfaces of the base member 10 in the thickness direction thereof by printing, etching, or the like, may be formed through the base member, as in a via or the like, may be formed as a stereoscopic wiring by a lamination technique, or may be formed by an appropriate combination thereof. The electrode body according to the present invention can be used as a so-called wiring substrate by installing wirings in a predetermined form in the base member. The wirings may be installed before the electrode portions 20 are formed or may be formed after the electrode portions 20 are formed.
In a combination of the electrode formation bodies serving as the wiring substrates, a combination of the wiring substrate and the electrode body in which semiconductor elements are formed, or a combination of the electrode formation bodies in which semiconductor elements are formed, the surfaces thereof on which the electrode portions 20 are formed face each other. When the positions of the electrode portions are aligned and the electrode portions are integrally bonded, the electrode portions are electrically bonded, and thus a semiconductor device is formed.
Operations and advantages of the electrode body 1 when the bonding is performed will be described with reference to
First, as shown in
Next, when the wiring substrates are pressurized while being heated, as shown in
A relatively large load is applied to the electrode portions initially coming into contact with the facing electrode portions 120, but the fragile bumps 22A receiving this load are quickly deformed and the other fragile bumps of the other electrode portions gradually come into contact with the facing electrode portions in sequence. At this time, some of the fragile bumps are moved to be sunken into the upper surfaces of the basic bumps 21A or the upper surfaces of the electrode portions 120 due to the concentration of the load, instead of being deformed. Due to the two kinds of behavior of the fragile bumps, the electrode portions of the wiring substrates 31 and 110 facing each other are reliably connected electrically.
When the fragile bump 22A initially coming into contact with the electrode portion is sufficiently deformed or sunken, as shown in
In the electrode body 1 according to this embodiment, as described above, the electrode portion 20 includes the basic bump 21 and the fragile bumps 22 formed on the upper surface of the basic bump 21. Therefore, when the electrode bonding is performed, the fragile bumps first come into contact with the other-side electrode portion. Then, the fragile bumps are quickly deformed due to the relatively large load at the initial contact time, and thus the load applied to the base member or the electrode portion is reduced.
Accordingly, it is possible to appropriately prevent the base member or the electrode portion from being damaged due to a large load at the initial contact time.
Since the fragile bumps 22 are formed as the structure independent from the basic bump 21 on the basic bump 21, for example, the phenomenon in which the basic bump is hardened when formed does not occur, as in the method disclosed in Japanese Unexamined Patent Application, First Publication No. 2001-267371 or the like. Accordingly, since the fragile bumps are deformed and sunken and thus appropriately function as so-called “crushing margins,” the electrode portions can be reliably connected to each other by wafer direct bonding by setting the height h1 of each fragile bump to a value equal to or greater than the height irregularity of the basic bumps.
Further, since only the fragile bumps are deformed in the electrode portion 20 and the electrode portions are connected to each other with little deformation of the basic bumps, the size of the gap between the wiring substrates can be controlled with high accuracy. As a result, even when a resin or the like is injected into the gap to protect the electrode portions after the connection of the electrode portions, the resin can be appropriately injected.
When the fragile bumps are formed by plating, precipitation of the nuclei can be used. Therefore, the fragile bumps can easily be formed.
The example in which the electrode portion of the other-side wiring substrate to be bonded does not include the fragile bumps has been described above, but the shape of the electrode portion of the other side is not particularly limited. Accordingly, the fragile bumps may be formed on the other side, or the relatively flattened electrode portions formed at substantially the same height as a wiring on the base member may be formed on the other side.
Even when the electrode portions of the other side do not include the fragile bumps, as in the above-described embodiment, and the electrode portions with irregular heights of a predetermined range are formed, the maximum gap between the electrode portions when the bonding is performed is theoretically a sum of the irregularity values of the heights of both electrode portions. Therefore, by setting the height of the fragile bump to a value equal to or greater than the sum, the electrode portions can be bonded more reliably.
The embodiment of the invention has been described, but the technical scope of the invention is not limited to the above-described embodiment, but may be modified within the scope of the invention without departing from the gist of the invention by changing combinations of the constituent elements, modifying the constituent elements, or eliminating the constituent elements.
First, the method of forming the fragile bumps is not limited to the above-described plating method, and the fragile bumps may be also formed by deposition, sputtering, or printing of a metal material or dropping of minute droplets of melted solder.
In the example of the above-described manufacturing method, the example in which the fragile bumps are formed after the resist layers used to form the basic bumps are removed has been described. However, the fragile bumps may be formed when the resist layers 101 remain, as in a modification example shown in
The electrode portions may be formed on both surfaces of the base member in the thickness direction thereof. The wiring substrate according to the invention in which the electrode portions are formed on both surfaces can be used as a so-called interposer.
In the electrode body or the wiring substrate according to the invention, not only the semiconductor element but also a semiconductor chip in which a semiconductor element is formed or a semiconductor package including a semiconductor chip may be mounted or included. In this case, the wiring substrate according to the invention can function as a semiconductor device in a state before the bonding.
A kind of semiconductor device configured by forming a single wiring substrate, a single semiconductor device, or the like or by bonding wiring substrates, semiconductor devices, or the like according to the invention is not particularly limited. For example, in a solid-state imaging device or the like including a plurality of pixels, it is necessary to form many electrodes at a narrow pitch. Therefore, the advantages obtained by applying the invention are considerable and the configuration of the invention can be suitably applied.
Further, the base member in the electrode body according to the invention is not limited to an insulator. For example, the electrode body in which the electrode portions are formed in a metallic base member with relatively high rigidity can be suitably used as a transfer electrode body used to transfer formed electrode portions to another base member. In this case, in the transferred electrode portions, the fragile bumps are located between the base member and the base bumps, but likewise function as crushing margins and the same advantages can be obtained.
The preferred embodiment of the invention has been described, but the invention is not limited to the embodiment. Addition, omission, or substitution of the configurations and other modifications can be made within the scope of the invention without departing from the gist of the invention. The invention is not limited to the above description and is limited only by the appended claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2012-082930 | Mar 2012 | JP | national |
