Claims
- 1. A thin film forming method comprising the steps of:
- providing a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel;
- introducing a reactive gas into the reaction vessel;
- activating the reactive gas to form a deposit species, the deposit species characterized by a phase diagram comprising a liquid phase region defined by a melting curve and an evaporation curve that intersect at a tripple point; and
- forming a thin film containing at least a part of the deposit species on the substrate while retaining a pressure in the reaction vessel higher than the triple point of the phase diagram of the deposit species, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.
- 2. A thin film forming method, comprising the steps of:
- providing a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel;
- introducing a first reactive gas and a second reactive gas into the reaction vessel, the first and second reactive gases each being characterized by a respective phase diagram comprising a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and
- reacting the first and second gases to form a thin film containing elements of the first and second reactive gases on the substrate while retaining a pressure in the reaction vessel higher than the triple point of the phase diagram of at least one of the first and second reactive gases, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of at least one of the first and second reactive gases.
Priority Claims (2)
Number |
Date |
Country |
Kind |
62-61237 |
Mar 1987 |
JPX |
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62-61238 |
Mar 1987 |
JPX |
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Parent Case Info
This is a continuation of application Ser. No. 08/203,757, filed Mar. 1, 1994, now U.S. Pat. No. 5,385,763, which was a continuation of Ser. No. 07/917,531, filed Jul. 20, 1992, now abandoned, which was a divisional application of Ser. No. 07/686,283, filed Apr. 16, 1991, now U.S. Pat. No. 5,156,881, which was a continuation of Ser. No. 07/169,577, filed Mar. 17, 1988, now abandoned.
US Referenced Citations (8)
Foreign Referenced Citations (6)
Number |
Date |
Country |
0049586 |
Apr 1982 |
EPX |
2154664 |
Nov 1973 |
FRX |
59-163831 |
Sep 1984 |
JPX |
63-58925 |
Mar 1988 |
JPX |
63-125680 |
May 1988 |
JPX |
1407222 |
Sep 1975 |
GBX |
Non-Patent Literature Citations (3)
Entry |
Patent Abstracts of Japan, vol. 15, No. 40, to Japanese Patent Document No. 02-277238 dated Jan. 30, 1991. |
S. Noguchi, H. Okano and Y. Horiike, "Liquid Phase Oxidation Employing O Atoms Produced by Microwave Discharge and Si(CH.sub.3).sub.4 ", Extended Abstracts of the 19th Conf. on Solid State Devices and Materials, pp. 451-454, 1987. |
J. Sato and K. Maeda, "Very Low Temperature CVD of SiO.sub.2 Films Using Ozone and Organosilane", Extended Abstracts of Dielectrics and Insulation Division of the Electrochemical Society, pp. 31-33, 1971. |
Divisions (1)
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Number |
Date |
Country |
Parent |
686283 |
Apr 1991 |
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Continuations (3)
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Number |
Date |
Country |
Parent |
203757 |
Mar 1994 |
|
Parent |
917531 |
Jul 1992 |
|
Parent |
169577 |
Mar 1988 |
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