Patent Grant
11417605
This application claims benefit of priority to Italian patent application number 102019000006736, filed May 10, 2019, which is herein incorporated by reference in its entirety.
Embodiments of the present disclosure generally relate to the field of semiconductor device manufacturing, and more particularly, to structures and methods of packaging semiconductor devices.
In wireless networks such as mobile communication networks, connectivity and communication between devices is achieved through the utilization of miniaturized antenna systems having antennas in combination with other electrical elements such as receivers or transmitters. Recently, the demand for increased data transfer rates of wireless networks has led to the development of 5G and 6G technologies utilizing new radio frequency (RF) bands, which has imposed stringent specifications on the design of RF antennas and other corresponding supporting elements. Accordingly, miniaturized RF antenna systems with high gain, large bandwidth, and reduced footprint are becoming increasingly sought after for integration into compact and complex wireless electronic devices.
In order to be integrated into wireless electronic devices, miniaturized antenna systems are often assembled on package level or printed circuit board (PCB) level structures to interconnect semiconductor devices and their corresponding antennas. As wireless technology advances, these structures are evolving into increasingly complex 2D and 3D structures with millions of transistors, capacitors, and resisters integrated therein an in close proximity to each other and the assembled antenna systems. Traditionally, the package and PCB-level structures for antenna integration have utilized conventional semiconductor materials, such as silicon substrates. However, these conventional semiconductor materials are characterized by increased dissipation of electromagnetic energy, resulting in reduced radiation efficiency and limited bandwidth of antennas assembled in close proximity thereto. The lossy nature of conventional semiconductor materials is particularly evident when utilizing high frequency (HF) antenna systems for high frequency applications.
Therefore, what is needed in the art are improved structures and methods of forming substrate-level and/or package-level structures for high frequency applications.
[Dependent Upon Finalized Claims]
So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, and may admit to other equally effective embodiments.
To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
The present disclosure relates to methods and apparatus for forming thin-form-factor reconstituted substrates and semiconductor device packages for high frequency applications. The substrate and package structures described herein may be utilized in high-density 2D and 3D integrated devices for 4G, 5G, 6G, and other wireless network systems. In one embodiment, a silicon substrate is structured by laser ablation to include cavities for placement of semiconductor dies and vias for deposition of conductive interconnections. Additionally, one or more cavities are structured to be filled or occupied with a flowable dielectric material. Integration of one or more high frequency components adjacent the dielectric-filled cavities enables improved performance of the radio frequency (“RF”) elements with reduced signal loss caused by the silicon substrate.
In general, the method 100 includes structuring a substrate to be used as a frame at operation 110, further described in greater detail with reference to
The method 200 begins at operation 210 and corresponding
Unless otherwise noted, embodiments and examples described herein are conducted on substrates having a thickness between about 50 μm and about 1000 μm, such as between about 90 μm and about 780 μm. For example, the substrate 302 has a thickness between about 100 μm and about 300 μm, such as a thickness between about 110 μm and about 200 μm. In another example, the substrate 302 has a thickness between about 60 μm and about 160 μm, such as a thickness between about 80 μm and about 120 μm.
Prior to operation 210, the substrate 302 may be sliced and separated from a bulk material by wire sawing, scribing and breaking, mechanical abrasive sawing, or laser cutting. Slicing typically causes mechanical defects or deformities in substrate surfaces formed therefrom, such as scratches, micro-cracking, chipping, and other mechanical defects. Thus, the substrate 302 is exposed to the first defect removal process at operation 210 to smoothen and planarize surfaces thereof and remove any mechanical defects in preparation for later structuring and packaging operations. In some embodiments, the substrate 302 may further be thinned by adjusting the process parameters of the first defect removal process. For example, a thickness of the substrate 302 may be decreased with increased exposure to the first defect removal process.
In some embodiments, the first defect removal process at operation 210 includes exposing the substrate 302 to a substrate polishing process and/or an etch process followed by rinsing and drying processes. For example, the substrate 302 may be exposed to a chemical mechanical polishing (CMP) process at operation 210. In some embodiments, the etch process is a wet etch process including a buffered etch process that is selective for the removal of desired materials (e.g., contaminants and other undesirable compounds). In other embodiments, the etch process is a wet etch process utilizing an isotropic aqueous etch process. Any suitable wet etchant or combination of wet etchants may be used for the wet etch process. In one embodiment, the substrate 302 is immersed in an aqueous HF etching solution for etching. In another embodiment, the substrate 302 is immersed in an aqueous KOH etching solution for etching. During the etch process, the etching solution may be heated to a temperature between about 30° C. and about 100° C., such as between about 40° C. and about 90° C., in order to accelerate the etching process. For example, the etching solution is heated to a temperature of about 70° C. during the etch process.
In still other embodiments, the etch process at operation 210 is a dry etch process. An example of a dry etch process includes a plasma-based dry etch process.
The thickness of the substrate 302 may be modulated by controlling the time of exposure of the substrate 302 to the polishing process and/or the etchants (e.g., the etching solution) used during the etch process. For example, a final thickness of the substrate 302 may be reduced with increased exposure to the polishing process and/or etchants. Alternatively, the substrate 302 may have a greater final thickness with decreased exposure to the polishing process and/or the etchants.
At operations 220 and 230, the now planarized and substantially defect-free substrate 302 has one or more features, such as vias 303, primary cavities 305, and secondary cavities 306 patterned therein and smoothened (one primary cavity 305, two secondary cavities 306, and four vias 303 are depicted in the lower cross-section of the substrate 302 in
In one embodiment, a desired pattern is formed in the substrate 302, such as a solar substrate or even a semiconductor wafer, by laser ablation. The laser ablation system utilized to laser drill features in the substrate 302 may include any suitable type of laser source. In some examples, the laser source is an infrared (IR) laser. In some examples the laser source is a picosecond UV laser. In other examples, the laser source is a femtosecond UV laser. In yet other examples, the laser source is a femtosecond green laser. The laser source generates a continuous or pulsed laser beam for patterning of the substrate. For example, the laser source may generate a pulsed laser beam having a frequency between 5 kHz and 500 kHz, such as between 10 kHz and about 200 kHz. In one example, the laser source 407 is configured to deliver a pulsed laser beam at a wavelength of between about 200 nm and about 1200 nm and at a pulse duration between about 10 ns and about 5000 ns with an output power of between about 10 Watts and about 100 Watts. The laser source is configured to form any desired pattern and features in the substrate 302, including the primary cavities 305, secondary cavities 306, and vias 303 described above and depicted in
Similar to the process of separating the substrate 302 from the bulk material, the laser patterning of the substrate 302 may cause unwanted mechanical defects on the surfaces of the substrate 302 such as chipping and cracking. Thus, after forming desired features in the substrate 302 by direct laser patterning, the substrate 302 is exposed to a second defect removal and cleaning process substantially similar to the first defect removal process described above.
During the second damage removal process at operation 230, the substrate 302 is etched, rinsed, and dried. The etch process proceeds for a predetermined duration to smoothen the surfaces of the substrate 302, and in particular, the surfaces exposed to laser patterning. In another aspect, the etch process is utilized to remove any undesired debris remaining from the laser ablation process. The etch process may be isotropic or anisotropic. In some embodiments, the etch process is a wet etch process utilizing any suitable wet etchant or combination of wet etchants in aqueous solution. For example, the substrate 302 may be immersed in an aqueous HF etching solution or an aqueous KOH etching solution. In some embodiments, the etching solution is heated to further accelerate the etching process. For example, the etching solution may be heated to a temperature between about 40° C. and about 80° C., such as between about 50° C. and about 70° C., such as a temperature of about 60° C. during etching of the substrate 302. In still other embodiments, the etch process at operation 230 is a dry etch process. An example of a dry etch process includes a plasma-based dry etch process.
In one example, the primary cavity 305 has an RF chip placed and embedded therein, and the secondary cavities 306 are filled with a flowable dielectric material upon which antennas or other RF passive elements are formed. Accordingly, the primary cavities 305 may be shaped and sized to accommodate any desired devices and/or dies therein and the secondary cavities 306 may be shaped and sized to have at least the dimensions of the RF elements to be formed thereover. Although only three cavities and four vias are depicted in
In one embodiment, the primary and secondary cavities 305, 306 and vias 303 have a depth equal to the thickness of the substrate 302, thus forming holes on opposing surfaces of the substrate 302 (e.g., through the thickness of the substrate 302). For example, the primary and secondary cavities 305, 306 and the vias 303 formed in the substrate 302 may have a depth of between about 50 μm and about 1 mm, such as between about 100 μm and about 200 μm, such as between about 110 μm and about 190 μm, depending on the thickness of the substrate 302. In other embodiments, the primary and secondary cavities 305, 306 and/or the vias 303 may have a depth equal to or less than the thickness of the substrate 302, thus forming a hole in only one surface (e.g., side) of the substrate 302.
In one embodiment, each primary and secondary cavity 305, 306 has lateral dimensions ranging between about 0.1 mm and about 50 mm, such as between about 1 mm and about 15 mm, such as between about 5 mm and about 10 mm, depending on the dimensions of one or more semiconductor devices or dies to be embedded therein or the dimensions of one or more RF elements to be integrated thereon. In some embodiments, the primary cavities 305 have larger lateral dimensions than the secondary cavities 306. For example, the primary cavities 305 have lateral dimensions between about 1 mm and about 50 mm, and the secondary cavities have lateral dimensions between about 0.2 mm and about 3 mm. In one embodiment, the primary and secondary cavities 305, 306 are sized to have lateral dimensions substantially similar to that of the semiconductor devices or dies or RF elements. For example, each primary and secondary cavity 305, 306 is formed having lateral dimensions exceeding those of the corresponding semiconductor device, die, or RF element by less than about 150 μm, such as less than about 120 μm, such as less than 100 μm. Having a reduced variance in the size of the primary and secondary cavities 305, 306 and the semiconductor devices, dies, or RF elements to be embedded therein or thereon reduces the amount of gap-fill material necessitated thereafter.
The vias 303 are generally substantially cylindrical in shape. However, other morphologies for the vias 303 are also contemplated. For example, the vias 303 may have a tapered or conical morphology, wherein a diameter at a first end thereof is larger than a diameter and a second end thereof. Formation of tapered or conical morphologies may be accomplished by moving the laser beam from the laser source utilized during structuring in a spiraling (e.g., circular, corkscrew) motion relative to the central axis of each of the vias 303. The laser beam may also be angled using a motion system to form tapered vias 303. The same methods may also be utilized to form cylindrical vias 303 having uniform diameters therethrough.
In one embodiment, each via 303 has a diameter ranging between about 20 μm and about 200 μm, such as between about 50 μm and about 150 μm, such as between about 60 μm and about 130 μm, such as between about 80 μm and 110 μm. A minimum pitch between centers of adjacent vias 303 is between about 70 μm and about 200 μm, such as between about 85 μm and about 160 μm, such as between about 100 μm and 140 μm.
At operation 240, the substrate 302 is exposed to an optional oxidation process to grow or deposit an insulating oxide film (i.e. layer) 314 on desired surfaces thereof after removal of mechanical defects. For example, the oxide film 314 may be formed on all surfaces of the substrate 302 such that it surrounds the substrate 302. The insulating oxide film 314 acts as a passivating layer on the substrate 302 and provides a protective outer barrier against corrosion and other forms of damage. In one embodiment, the oxidation process is a thermal oxidation process. The thermal oxidation process is performed at a temperature of between about 800° C. and about 1200° C., such as between about 850° C. and about 1150° C. For example, the thermal oxidation process is performed at a temperature of between about 900° C. and about 1100° C., such as a temperature of between about 950° C. and about 950° C. In one embodiment, the thermal oxidation process is a wet oxidation process utilizing water vapor as an oxidant. In one embodiment, the thermal oxidation process is a dry process utilizing molecular oxygen as the oxidant. It is contemplated that the substrate 302 may be exposed to any suitable oxidation process at operation 240 to form the oxide film 314 thereon. In some embodiments, the oxide film 314 is a silicon dioxide film. The oxide film 314 generally has a thickness between about 100 nm and about 3 μm, such as between about 200 nm and about 2.5 μm. For example, the oxide film 314 has a thickness between about 300 nm and about 2 μm, such as about 1.5 μm.
After structuring, the substrate 302 may be utilized as a frame to form a reconstituted substrate in subsequent packaging operations.
Generally, the method 400 begins at operation 402 and
In some examples, the flowable layer 518a may be formed of a ceramic-filler or particle-containing epoxy resin, such as an epoxy resin filled with (e.g., containing) substantially spherical silica (SiO2) particles. As used herein, the term “spherical” refers to any round, ellipsoid, or spheroid shape. For example, in some embodiments, the ceramic fillers may have an elliptic shape, an oblong oval shape, or other similar round shape. However, other morphologies are also contemplated. Other examples of ceramic fillers that may be utilized to form the flowable layer 518a and other layers of the insulating film 516a include aluminum nitride (AlN), aluminum oxide (Al2O3), silicon carbide (SiC), silicon nitride (Si3N4), Sr2Ce2Ti5O16), zirconium silicate (ZrSiO4), wollastonite (CaSiO3), beryllium oxide (BeO), cerium dioxide (CeO2), boron nitride (BN), calcium copper titanium oxide (CaCu3Ti4O12), magnesium oxide (MgO), titanium dioxide (TiO2), zinc oxide (ZnO) and the like.
In some examples, the ceramic fillers utilized to form the flowable layer 518a have particles ranging in size between about 40 nm and about 1.5 μm, such as between about 80 nm and about 1 μm. For example, the ceramic fillers utilized to form the flowable layer 518a have particles ranging in size between about 200 nm and about 800 nm, such as between about 300 nm and about 600 nm. In some embodiments, the ceramic fillers include particles having a size less than about 25% of a width or diameter of the features (e.g., via, cavity, or through-assembly via) formed in the substrate, such as less than about 15% of a desired feature's width or diameter.
The flowable layer 518a typically has a thickness less than about 60 μm, such as between about 5 μm and about 50 μm. For example, the flowable layer 518a has a thickness between about 10 μm and about 25 μm. In one embodiment, the insulating film 516a may further include one or more protective layers. For example, the insulating film 516a includes a polyethylene terephthalate (PET) protective layer 522a. However, any suitable combination of layers and insulating materials is contemplated for the insulating film 516a. In some embodiments, the entire insulating film 516a has a thickness less than about 120 μm, such as a thickness less than about 90 μm.
The substrate 302, which is coupled to the insulating film 516a on the first side 575 thereof, and specifically to the flowable layer 518a of the insulating film 516a, may further be optionally placed on a carrier 524 for mechanical support during later processing operations. The carrier is formed of any suitable mechanically and thermally stable material. For example, the carrier 524 is formed of polytetrafluoroethylene (PTFE). In another example, the carrier 524 is formed of PET.
At operation 404 and depicted in
The semiconductor dies 526 placed within the primary cavities 305 are positioned over a surface of the insulating film 516a exposed through the primary cavities 305. In one embodiment, the semiconductor dies 526 are placed on an optional adhesive layer (not shown) disposed or formed over the insulating film 516a. Generally, the one or more semiconductor dies 526 are multipurpose dies having integrated circuits formed on active surfaces 528 thereof. For example, the one or more semiconductor dies 526 include RF chips. In some embodiments, the semiconductor dies 526 are all of the same type of semiconductor device or die. In other embodiments, the semiconductor dies 526 include different types of semiconductor devices or dies.
After placement of the dies 526 within the primary cavities 305, a first protective film 560 is placed over a second side 577 (e.g., surface 508) of the substrate 302 at operation 406 and
The substrate 302, now affixed to the insulating film 516a on the first side 575 and the protective film 560 on the second side 577 and further having dies 526 disposed in primary cavities 305 therein, is exposed to a first lamination process at operation 408. During the lamination process, the substrate 302 is exposed to elevated temperatures, causing the flowable layer 518a of the insulating film 516a to soften and flow into open volumes between the insulating film 516a and the protective film 560, such as into voids 550 within the vias 303 and secondary cavities 306 and gaps 551 between the interior walls of the primary cavities 305 and the dies 526. Accordingly, the semiconductor dies 526 become at least partially embedded in the material of the insulating film 516a within the primary cavities 305 and the secondary cavities 306 and the vias 303 become partially filled with material of the insulating film 516a, as depicted in
In one embodiment, the lamination process is a vacuum lamination process that may be performed in an autoclave or other suitable device. In one embodiment, the lamination process is performed by use of a hot pressing process. In one embodiment, the lamination process is performed at a temperature of between about 80° C. and about 140° C. and for a period between about 5 seconds and about 1.5 minutes, such as between about 30 seconds and about 1 minute. In some embodiments, the lamination process includes the application of a pressure of between about 1 psig and about 50 psig while a temperature of between about 80° C. and about 140° C. is applied to substrate 302 and insulating film 516a for a period between about 5 seconds and about 1.5 minutes. For example, the lamination process is performed at a pressure of between about 5 psig and about 40 psig, a temperature of between about 100° C. and about 120° C. for a period between about 10 seconds and about 1 minute. For example, the lamination process is performed at a temperature of about 110° C. for a period of about 20 seconds.
At operation 410, the protective film 560 is removed and the substrate 302, now having the laminated insulating material of the flowable layer 518a at least partially surrounding the one or more dies 526 within the primary cavities 305 and partially filling the vias 303 and the secondary cavities 306, is coupled to a second protective film 562. As depicted in
Upon coupling the substrate 302 to the second protective film 562, a second insulating film 516b substantially similar to the first insulating film 516a is placed on the second side 577 of the substrate 302 at operation 412 and
At operation 414, a third protective film 564 is placed over the second insulating film 516b, as depicted in
The substrate 302, now affixed to the insulating film 516b and protective layer 564 on the second side 577 and the protective film 562 and optional carrier 524 on the first side 575, is exposed to a second lamination process at operation 416 and
In one embodiment, the lamination process is a vacuum lamination process that may be performed in an autoclave or other suitable device. In one embodiment, the lamination process is performed by use of a hot pressing process. In one embodiment, the lamination process is performed at a temperature of between about 80° C. and about 140° C. and for a period between about 1 minute and about 30 minutes. In some embodiments, the lamination process includes the application of a pressure of between about 10 psig and about 150 psig while a temperature of between about 80° C. and about 140° C. is applied to substrate 302 and insulting film 516b for a period between about 1 minute and about 30 minutes. For example, the lamination process is performed at a pressure of between about 20 psig and about 100 psig, a temperature of between about 100° C. and about 120° C. for a period between about 2 minutes and 10 minutes. For example, the lamination process is performed at a temperature of about 110° C. for a period of about 5 minutes.
After lamination, the substrate 302 is disengaged from the carrier 524 and the protective films 562, 564 are removed at operation 418, resulting in a laminated intermediary die assembly 502. As depicted in
Upon removal of the protective layers 522a, 522b and the protective films 562, 564, the intermediary die assembly 502 is exposed to a cure process to fully cure (i.e. harden through chemical reactions and cross-linking) the insulating dielectric material of the flowable layers 518a, 518b, thus forming a cured insulating layer 519. The insulating layer 519 substantially surrounds the substrate 302 and the semiconductor dies 526 embedded therein. For example, the insulating layer 519 contacts or encapsulates at least the sides 575, 577 of the substrate 302 (including surfaces 606, 608) and at least six sides or surfaces of each semiconductor die 526, which have rectangular prism shapes as illustrated in
In one embodiment, the cure process is performed at high temperatures to fully cure the insulating layer 519. For example, the cure process is performed at a temperature of between about 140° C. and about 220° C. and for a period between about 15 minutes and about 45 minutes, such as a temperature of between about 160° C. and about 200° C. and for a period between about 25 minutes and about 35 minutes. For example, the cure process is performed at a temperature of about 180° C. for a period of about 30 minutes. In further embodiments, the cure process at operation 518 is performed at or near ambient (e.g. atmospheric) pressure conditions.
After curing, one or more through-assembly vias 503 are drilled through the intermediary die assembly 502 at operation 420, forming channels through the entire thickness of the intermediary die assembly 502 for subsequent interconnection formation. In some embodiments, the intermediary die assembly 502 may be placed on a carrier, such as the carrier 524, for mechanical support during the formation of the through-assembly vias 503 and subsequent contact holes 532. The through-assembly vias 503 are drilled through the vias 303 formed in the substrate 302 and subsequently filled with the insulating layer 519. Thus, the through-assembly vias 503 may be circumferentially surrounded by the insulating layer 519 filled within the vias 303. By having the polymer-based dielectric material of the insulating layer 519 (e.g., a ceramic-filler-containing epoxy resin material) line the walls of the vias 303, capacitive coupling between the conductive silicon-based substrate 302 and interconnections 944 (described with reference to
In one embodiment, the through-assembly vias 503 have a diameter less than about 100 μm, such as less than about 75 μm. For example, the through-assembly vias 503 have a diameter less than about 60 μm, such as less than about 50 μm. In one embodiment, the through-assembly vias 503 have a diameter of between about 25 μm and about 50 μm, such as a diameter of between about 35 μm and about 40 μm. In one embodiment, the through assembly vias 503 are formed using any suitable mechanical process. For example, the through-assembly vias 503 are formed using a mechanical drilling process. In one embodiment, through-assembly vias 503 are formed through the intermediary die assembly 502 by laser ablation. For example, the through-assembly vias 503 are formed using an ultraviolet laser. In one embodiment, the laser source utilized for laser ablation has a frequency between about 5 kHz and about 500 kHz. In one embodiment, the laser source is configured to deliver a pulsed laser beam at a pulse duration between about 10 ns and about 100 ns with a pulse energy of between about 50 microjoules (μJ) and about 500 μJ. Utilizing an epoxy resin material having small ceramic filler particles for the insulating layer 519 promotes more precise and accurate laser patterning of small-diameter vias, such as the vias 503, as the small ceramic filler particles therein exhibit reduced laser light reflection, scattering, diffraction and transmission of the laser light away from the area in which the via is to be formed during the laser ablation process.
At operation 422 and
After formation of the contact holes 532, the intermediary die assembly 502 is exposed to a de-smear process at operation 422 to remove any unwanted residues and/or debris caused by laser ablation during the formation of the through-assembly vias 503 and the contact holes 532. The de-smear process thus cleans the through-assembly vias 503 and contact holes 532 and fully exposes the contacts 530 on the active surfaces 528 of the embedded semiconductor die 526 for subsequent metallization. In one embodiment, the de-smear process is a wet de-smear process. Any suitable aqueous etchants, solvents, and/or combinations thereof may be utilized for the wet de-smear process. In one example, potassium permanganate (KMnO4) solution may be utilized as an etchant. Depending on the residue thickness, exposure of the intermediary die assembly 502 to the wet de-smear process at operation 522 may be varied. In another embodiment, the de-smear process is a dry de-smear process. For example, the de-smear process may be a plasma de-smear process with an O2:CF4 mixture gas. The plasma de-smear process may include generating a plasma by applying a power of about 700 W and flowing O2:CF4 at a ratio of about 10:1 (e.g., 100:10 sccm) for a time period between about 60 seconds and about 120 seconds. In further embodiments, the de-smear process is a combination of wet and dry processes.
Following the de-smear process at operation 522, the intermediary die assembly 502 is ready for formation of interconnection paths therein and RF elements thereon, described below with reference to
As discussed above,
Accordingly, after placement of the one or more semiconductor dies 526 onto a surface of the insulating film 516a exposed through the cavities 305, the second insulating film 516b is positioned over the second side 577 (e.g., major surface 508) of the substrate 302 at operation 630 and
At operation 640 and
Similar to the lamination processes described with reference to
At operation 650, the one or more protective layers of the insulating films 516a and 516b are removed from the substrate 302, resulting in the laminated intermediary die assembly 502. As depicted in
Upon removal of the protective layers 522a, 522b, the intermediary die assembly 502 is exposed to a cure process to fully cure the insulating dielectric material of the flowable layers 518a, 518b. Curing of the insulating material results in the formation of the cured insulating layer 519. As depicted in
In one embodiment, the cure process is performed at high temperatures to fully cure the intermediary die assembly 502. For example, the cure process is performed at a temperature of between about 140° C. and about 220° C. and for a period between about 15 minutes and about 45 minutes, such as a temperature of between about 160° C. and about 200° C. and for a period between about 25 minutes and about 35 minutes. For example, the cure process is performed at a temperature of about 180° C. for a period of about 30 minutes. In further embodiments, the cure process at operation 650 is performed at or near ambient (e.g. atmospheric) pressure conditions.
After curing at operation 650, the method 600 is substantially similar to operations 420 and 422 of the method 400. For example, the intermediary die assembly 502 has one or more through-assembly vias 503 and one or more contact holes 532 drilled through the insulating layer 519. Subsequently, the intermediary die assembly 502 is exposed to a de-smear process, after which the intermediary die assembly 502 is ready for formation of interconnection paths therein, as described below.
In one embodiment, the electrical interconnections and RF elements formed on the intermediary die assembly 502 are typically formed of copper. Thus, the method 800 may optionally begin at operation 810 and
In one embodiment, the optional adhesion layer 940 is formed of titanium, titanium nitride, tantalum, tantalum nitride, manganese, manganese oxide, molybdenum, cobalt oxide, cobalt nitride, or any other suitable materials or combinations thereof. In one embodiment, the adhesion layer 940 has a thickness of between about 10 nm and about 300 nm, such as between about 50 nm and about 150 nm. For example, the adhesion layer 940 has a thickness between about 75 nm and about 125 nm, such as about 100 nm. The adhesion layer 940 is formed by any suitable deposition process, including but not limited to chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma enhanced CVD (PECVD), atomic layer deposition (ALD), or the like.
The optional seed layer 942 may be formed on the adhesion layer 940 or directly on the insulating layer 519 (e.g., without the formation of the adhesion layer 940). The seed layer 942 is formed of a conductive material such as copper, tungsten, aluminum, silver, gold, or any other suitable materials or combinations thereof. In one embodiment, the seed layer 942 has a thickness between about 50 nm and about 500 nm, such as between about 100 nm and about 300 nm. For example, the seed layer 942 has a thickness between about 150 nm and about 250 nm, such as about 200 nm. In one embodiment, the seed layer 942 has a thickness of between about 0.1 μm and about 1.5 μm. Similar to the adhesion layer 940, the seed layer 942 is formed by any suitable deposition process, such as CVD, PVD, PECVD, ALD dry processes, wet electroless plating processes, or the like. In one embodiment, a molybdenum adhesion layer 940 is formed on the intermediary die assembly in combination with a copper seed layer 942. The Mo—Cu adhesion and seed layer combination enables improved adhesion with the surfaces of the insulating layer 519 and reduces undercut of conductive interconnect lines during a subsequent seed layer etch process at operation 870.
At operations 820 and 830, corresponding to
At operation 840 and
At operation 850 and corresponding with
The interconnections 944 may completely fill the through-assembly vias 503 and contact holes 532 or only cover inner circumferential walls thereof. For example, the interconnections 944 may line the inner circumferential walls of the through-assembly vias 503 and have hollow cores. In some embodiments, the interconnections 944 protrude from one or both of the major surfaces 905, 907, as depicted in
The RF elements 946 may include any suitable components for utilization with wireless network devices and systems, including 4G, 5G, and 6G systems. For example, the RF elements 946 may include antenna patches, capacitors, inductors, resistors, and the like. In some embodiments, the RF elements 946 remain exposed upon completion of the reconstituted substrate 900. In other embodiments, the RF elements 946 become embedded within the reconstituted substrate 900 upon formation of one or more additional redistribution layers thereon (e.g., redistribution layers 1158, 1160 discussed below). In some embodiments, the RF elements 946 will include a metal containing layer that has a desired shape (e.g., shape in the X-Y plane, which is parallel to the major surface 907) to facilitate the creation of a RF communication element. In one example, one or more of the RF elements 946 have a shape that is configured to form at least a portion of a monopole, dipole, loop, aperture (e.g., slotted, inverted-F) or array type of RF antenna. The shape of the formed RF elements 946 may be created during the patterning of the resist film 950 process performed during operations 820-840 and subsequent metallization process(es) performed during operation 850. As depicted, the RF elements 946 are formed over the secondary cavities 306, now filled with the dielectric material of the insulating layer 519. Accordingly, by forming the RF elements 946 over the insulating layer 519 and not the substrate 302, any radiation loss caused by the conductive nature of the substrate 302 is limited, resulting in improved radiation efficiency of the RF element 946.
Upon formation of the interconnections 944 and RF elements 946, the resist film 950 is removed at operation 860 and the intermediary die assembly 502 is exposed to an adhesion and/or seed layer etch process at operation 970, corresponding with
In some embodiments, upon the completion of operations 820-860, one or more contacts 530 that are coupled to the semiconductor die 526 are further coupled to one or more of the RF elements 946 by a lateral trace region (not shown) of the one or more contacts 530. The lateral trace region can include a portion of the conductive layer formed in operation 850 and is used to electrically connect an RF element 946 to at least one of the one or more contacts 530. The lateral trace region will typically extend across a portion of the major surface 907, between the RF element 946 and the at least one of the one or more contacts 530.
Following the adhesion and/or seed layer etch process at operation 870, the reconstituted substrate 900 may be singulated into one or more electrically functioning packages or SiPs, and thereafter integrated with other semiconductor devices and packages in various 2D and 3D arrangements and architectures. For example, the packages or SiPs may be vertically stacked with additional packages or SiPs and/or other semiconductor devices and systems to form homogeneous or heterogeneous 3D stacked systems. Alternatively, the reconstituted substrate 900 may be integrated with additional semiconductor devices and systems prior to singulation.
In yet another embodiment, upon etching of the adhesion and/or seed layer, the reconstituted substrate 900 may have one or more redistribution layers 1158, 1160 (shown in
The method 1000 is substantially similar to the methods 400, 600, and 800 described above. Generally, the method 1000 begins at operation 1002 and
In one embodiment, the flowable layer 1118 includes an epoxy resin material. In one embodiment, the flowable layer 1118 includes a ceramic-filler-containing epoxy resin material. In another embodiment, the flowable layer 1118 includes a photodefinable polyimide material. The material properties of photodefinable polyimide enable the formation of smaller (e.g., narrower) vias through the resulting interconnect redistribution layer formed from the insulating film 1116. However, any suitable combination of flowable layers 1118 and insulating materials is contemplated for the insulating film 1116. For example, the insulating film 1116 may include one or more flowable layers 1118 including a non-photosensitive polyimide material, a polybenzoxazole (PBO) material, a silicon dioxide material, and/or a silicon nitride material.
In some examples, the material of the flowable layer 1118 is different from the flowable layers 518 of the insulating films 516. For example, the flowable layers 518 may include a ceramic-filler-containing epoxy resin material and the flowable layer 1118 may include a photodefinable polyimide material. In another example, the flowable layer 1118 includes a different inorganic dielectric material from the flowable layers 518. For example, the flowable layers 518 may include a ceramic-filler-containing epoxy resin material and the flowable layer 1118 may include a silicon dioxide material.
The insulating film 1116 has a total thickness of less than about 120 μm, such as between about 40 μm and about 100 μm. For example, the insulating film 1116 including the flowable layer 1118 and the protective layer 1122 has a total thickness of between about 50 μm and about 90 μm. In one embodiment, the flowable layer 1118 has a thickness of less than about 60 μm, such as a thickness between about 5 μm and about 50 μm, such as a thickness of about 20 μm. The insulating film 1116 is placed on a surface of the reconstituted substrate 900 having exposed interconnections 944 that are coupled to the contacts 530 on the active surface 528 of semiconductor dies 526 and/or coupled to the metallized through-assembly vias 503, such as the major surface 907.
After placement of the insulating film 1116, the reconstituted substrate 900 is exposed to a lamination process substantially similar to the lamination process described with reference to operations 408, 416, and 640. The reconstituted substrate 900 is exposed to elevated temperatures to soften the flowable layer 1118, which subsequently bonds to the insulating layer 519 already formed on the reconstituted substrate 900. Thus, in one embodiment, the flowable layer 1118 becomes integrated with the insulating layer 519 and forms an extension thereof. The integration of the flowable layer 1118 and the insulating layer 519 results in an expanded insulating layer 519, covering the previously exposed interconnections 944. Accordingly, the bonded flowable layer 1118 and the insulating layer 519 will herein be jointly described as the insulating layer 519. In other embodiments, however, the lamination and subsequent curing of the flowable layer 1118 forms a second insulating layer (not shown) on the insulating layer 519. In some examples, the second insulating layer is formed of a different material layer than the insulating layer 519.
In one embodiment, the lamination process is a vacuum lamination process that may be performed in an autoclave or other suitable device. In one embodiment, the lamination process is performed by use of a hot pressing process. In one embodiment, the lamination process is performed at a temperature of between about 80° C. and about 140° C. and for a period between about 1 minute and about 30 minutes. In some embodiments, the lamination process includes the application of a pressure of between 10 psig and about 100 psig while a temperature of between about 80° C. and about 140° C. is applied to the substrate 302 and insulating film 1116 for a period between about 1 minute and about 30 minutes. For example, the lamination process is performed at a pressure of between about 30 psig and about 80 psig and a temperature of between about 100° C. and about 120° C. for a period between about 2 minutes and about 10 minutes. For example, the lamination process is performed at a temperature of about 110° C. for a period of about 5 minutes. In further examples, the lamination process is performed at a pressure between about 30 psig and about 70 psig, such as about 50 psig.
At operation 1004 and
The reconstituted substrate 900 is then selectively patterned by laser ablation at operation 1006 and
In alternative embodiments, the patterning of the reconstituted substrate 900 at operation 1006 is performed using a plasma surface modification process, such as a plasma dry etch process utilizing fluorocarbon, O2, NH3, N2, He, O12, and/or Ar reactive gases.
Upon patterning thereof, the reconstituted substrate 900 is exposed to a de-smear process substantially similar to the de-smear process at operations 422 and 670. During the de-smear process at operation 1006, any unwanted residues and debris formed by laser ablation during the formation of the redistribution vias 1103 are removed from the redistribution vias 1103 to clear (e.g., clean) the surfaces thereof for subsequent metallization. In one embodiment, the de-smear process is a wet process. Any suitable aqueous etchants, solvents, and/or combinations thereof may be utilized for the wet de-smear process. In one example, KMnO4 solution may be utilized as an etchant. In another embodiment, the de-smear process is a dry de-smear process. For example, the de-smear process may be a plasma de-smear process with an O2/CF4 mixture gas. In further embodiments, the de-smear process is a combination of wet and dry processes.
At operation 1008 and
The optional seed layer 1142 is formed from a conductive material such as copper, tungsten, aluminum, silver, gold, or any other suitable materials or combinations thereof. In one embodiment, the seed layer 1142 has a thickness between about 50 nm and about 500 nm, such as between about 100 nm and about 300 nm. For example, the seed layer 1142 has a thickness between about 150 nm and about 250 nm, such as about 200 nm. In one embodiment, the seed layer 1142 has a thickness of between about 0.1 μm and about 1.5 μm. Similar to the adhesion layer 1140, the seed layer 1142 may be formed by any suitable deposition process, such as CVD, PVD, PECVD, ALD dry processes, wet electroless plating processes, or the like. In one embodiment, a molybdenum adhesion layer 1140 and a copper seed layer 1142 are formed on the reconstituted substrate 900 to reduce undercut of conductive interconnect lines during a subsequent seed layer etch process at operation 1020.
At operations 1010, 1012, and 1014, corresponding to
At operations 1016 and 1018, corresponding to
At operation 1020 and
At operation 1022 and depicted in
As described above, the devices and methods described herein may be utilized in any suitable 2D or 3D integration application, including stacked PCB and/or stacked package assemblies. In one exemplary embodiment depicted in
In some embodiments, the PCB 1250 is formed of a suitable dielectric material such as glass fiber reinforced epoxy resin (e.g., FR-1, FR-2, FR-4, halogen-free FR-4, high Tg FR-4, and FR-5). Other examples of suitable dielectric materials include resin copper-clad (RCC), polyimide, polytetrafluoroethylene (PTFE), CEM-3, and the like. The PCB 1250 may be a single-sided or double-sided circuit boards. In some embodiments, the PCB 1250 includes an electrical distribution layer 1270 formed thereon and conductively connected with interconnections 944 of the reconstituted substrate 1200 and/or the reconstituted substrate 900. The electrical distribution layer 1270 is formed of any suitable conductive material such as copper, tungsten, aluminum, silver, gold, or any other suitable materials or combinations thereof, and has a thickness between about 40 μm and about 100 μm, such as a thickness between about 60 μm and about 80 μm. For example, the electrical distribution layer 1270 has a thickness of about 70 μm. Furthermore, although a single electrical distribution layers 1270 is depicted, the PCB 1250 and or the reconstituted substrates 900, 1200 may have more or fewer electrical distribution layers formed on surfaces thereof. In other embodiments, the PCB 1250 includes conductive pads or other suitable electrical contacts for interconnection with the reconstituted substrates 900, 1200.
The reconstituted substrate 1200 is substantially similar to the reconstituted substrate 900, and includes a substrate 302, insulating layer 519, embedded dies 526, interconnections 944, and redistribution connections 1144. In some embodiments, the reconstituted substrate 1200 may further include one or more embedded RF elements 946.
The PCB 1250 and the reconstituted substrates 900, 1200 are directly or indirectly conductively by one or more solder bumps 1240 disposed between the electrical contacts of the PCB 1250 (e.g., electrical distribution layer 1270) and the interconnections 944 and redistribution connections 1144 of the reconstituted substrates 900, 1200. In one embodiment, the solder bumps 1240 are formed of a substantially similar material to that of the interconnections 944, redistribution connections 1144, and/or the electrical distribution layer 1270. For example, the solder bumps 1240 are formed of a conductive material such as copper, tungsten, aluminum, silver, gold, or any other suitable materials or combinations thereof. In other examples, the solder bumps 1240 are formed of a solder alloy such as Sn—Pb, Sn—Ag, Sn—Cu, or any other suitable materials or combinations thereof. In one embodiment, the solder bumps 1240 include C4 (controlled collapse chip connection) bumps. In one embodiment, the solder bumps 1240 include C2 (chip connection, such as a Cu-pillar with a solder cap) bumps. Utilization of C2 solder bumps enables a smaller pitch between interconnections and improved thermal and/or electrical properties for the stacked structure 1202. In some embodiments, the solder bumps 1240 have a diameter between about 10 μm and about 150 μm, such as a diameter between about 50 μm and about 100 μm. The solder bumps 1240 may further be formed by any suitable wafer bumping processes, including but not limited to electrochemical deposition (ECD) and electroplating.
The utilization of solder bumps 1240 to bridge interconnections 944, redistributions connections 1144, and/or the electrical distribution layer 1270 creates spaces (e.g., distances) between the reconstituted substrate 900, 1200 and/or the PCB 1250. In some embodiments, these spaces are filled with an encapsulation material (not shown) to enhance the reliability of the solder bumps 1240 disposed therein. The encapsulation material is any suitable type of encapsulant or underfill and substantially surrounds the solder bumps 1240. In one example, the encapsulation material includes a pre-assembly underfill material, such as a no-flow underfill (NUF) material, a nonconductive paste (NCP) material, and a nonconductive film (NCF) material. In one example, the encapsulation material includes a post-assembly underfill material, such as a capillary underfill (CUF) material and a molded underfill (MUF) material. In one embodiment, the encapsulation material includes a low-expansion-filler-containing resin, such as an epoxy resin filled with (e.g., containing) SiO2, AlN, Al2O3, SiC, Si3N4, Sr2Ce2Ti5O16, ZrSiO4, CaSiO3, BeO, CeO2, BN, CaCu3Ti4O12, MgO, TiO2, ZnO and the like.
Although shown in one exemplary arrangement, the reconstituted substrate 900 may be integrated into any desired 2D or 3D arrangements having one or more of the systems and/or devices shown.
In sum, the embodiments described herein advantageously provide improved methods of reconstituted substrate formation for fabricating advanced integrated semiconductor devices for high frequency applications. By utilizing the methods described above, high aspect ratio RF features may be formed on glass and/or silicon substrates while maintaining high radiation efficiency and optimal bandwidth, thus enabling the economical formation of thinner and narrower reconstituted substrates for 2D and 3D integration. The thin and small-form-factor reconstituted substrates and reconstituted substrate stacks described herein provide the benefits of not only increased RF radiation efficiency, high I/O density, and improved bandwidth and power, but also more economical manufacturing with dual-sided metallization and high production yield by eliminating single-die flip-chip attachment, wire bonding, and over-molding steps, which are prone to feature damage in high-volume manufacturing of integrated semiconductor devices.
While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
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