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The following description explains one embodiment of the present invention with reference to
First, an arrangement of a semiconductor apparatus 100 of the present embodiment is described as follows with reference to
Also, continuous lines and dotted lines of
As illustrated in
The semiconductor chip 101 has a plate shape. On the semiconductor chip 101, a semiconductor device corresponding to a function of the semiconductor apparatus 100 is packaged.
Each of the electrode pads 102 serves as an inlet/outlet via which an electric signal is inputted from the outside to the semiconductor chip 101, an electric signal is outputted from the semiconductor chip 101 to the outside, and power is supplied from the outside into the semiconductor chip 101.
Further, a surface of the electrode pad 102 is made of aluminum (Al) or aluminum alloy, and 4×4 electrode pads 102 are provided on a side of the semiconductor chip 102 in a matrix manner. However, positions and the number of the electrode pads 102 to be formed are not limited to this and may be suitably set according to a size of the semiconductor apparatus 100 and the number of electric signal input/output pins. Herein, the side where the electrode pads 102 are formed is referred to as a main side (side where elements are formed).
The insulation layer 103 allows the electrode pads 102 to be insulated from each other and covers the main side of the semiconductor chip 101 so that the electrode pads 102 are exposed.
Further, the insulation layer 103 is constituted of a film made of silicon dioxide (SiO2) or silicon nitride (SiN). Further, a polymer material such as polyimide, polybenzoxazole (PBO), and benzocyclobutene (BCB) may be formed on the film so as to have the thickness about 3 to 10 μm.
Each of the conductor sections 104 has a flat and substantially cylindrical shape and has a through hole 105 (level difference) formed so as to pierce a center of a surface of the conductor section 104. Further, the conductor section 104 is formed by plating and pierces the insulation layer 103 so as to be in contact with the electrode pad 102. 4×4 of the conductor sections 104 are disposed in a matrix manner. However, positions and the number of the conductor sections 104 are not limited to this and may be suitably set according to a size of the semiconductor apparatus 100 and the number of the electrode pads 102.
Further, the conductor section 104 is made mainly of copper (Cu) whose thickness is about 10 μm. However, a copper (Cu) thin film (thickness is about 0.1 μm) serving as a seed layer is formed on a lower side (side in contact with the electrode pad 102) of the conductor section 104 by sputtering. Further, in order to suppress mutual diffusion of aluminum (Al) and copper (Cu) of the electrode pad 102, a titanium (Ti), titanium tungsten (TiW), or chromium (Cr) thin film (thickness is about 0.1 μm) is formed on a lower side of the thin film by sputtering.
It is preferable that a diameter of the through hole 105 is ⅓ to ⅔ of a diameter of the conductor section 104. In the present embodiment, in case where a pitch of the external connection terminals 106 is 0.5 mm for example, the diameter of the conductor section 104 is 0.27 mm and the diameter of the cyclic through hole 105 is 0.09 to 0.18 mm.
Note that, at the through hole 105, the insulation layer 103 is exposed unless the external connection terminal 106 is formed.
The external connection terminal 106 is a solder ball constituted of solder made mainly of tin (Sn). Further, the solder is melted so as to connect the external connection terminal 106 to the package substrate for example.
Further, the external connection terminal 106 is formed above the conductor section 104 so as to be in contact with the conductor section 104 by filling the through hole 105 of the conductor section 104 with solder. In case of the present embodiment, if the external connection terminals 106 are formed by printing, a height thereof ranges from 0.12 to 0.2 mm (inclusive of unevenness) and a height in installing solder balls thereon ranges from 0.18 to 0.27 mm. Note that, the heights are not limited to them if an amount of solder is intentionally increased. In this case, also the diameter is larger than the diameter of the conductor section 104. However, excessive increase of the solder is highly likely to cause the external connection terminals to be connected (bridged) to one another at the time of packaging on the substrate.
Next, with reference to
On a package surface of the package substrate 800, solder resists 801 covering a surface of the substrate and metals 802 serving as packaging sections of the substrate are formed. Note that, illustrations of other packaging parts are omitted.
The metals 802 are disposed in the same manner as the external connection terminals 106 of the semiconductor apparatus 100. Further, each of the metals 802 of the package substrate 800 and each of the external connection terminals 106 are bonded to each other, thereby packaging the semiconductor apparatus 100 onto the package substrate 800. As a result, electrical connection between the semiconductor apparatus 100 and the package substrate 800 is realized.
Further, the package substrate 800 on which the semiconductor apparatus 100 has been packaged is stored in a housing (not shown) of an electric device or the like for example.
Generally, it is assumed that the device is used in various environments such as an environment whose temperature is high or an environment in which the device is roughly treated.
In case where the device is used in the environment whose temperature is high, parts constituting the semiconductor apparatus 100 have thermal expansion coefficients different from each other, so that stresses are exerted onto the parts repetitively. Further, in case where the device is roughly used and falls down, an impact is exerted onto the semiconductor apparatus 100.
Thus, the crack 50 locally occurs in a vicinity of a joint interface of the external connection terminal 106. Stresses are likely to be concentrated onto the joint interface. Note that, the vicinity of the joint interface of the external connection terminal 106 refers to (i) a vicinity of a joint on the side of the semiconductor apparatus 100 and (ii) a vicinity of a joint on the side of the package substrate 800. A weaker one of the vicinities is first broken depending on a shape difference and a size difference between the joints.
Note that, the present invention is to improve the packaging reliability in solving the problem caused by the crack 50 which occurs in the vicinity of the joint of the external connection terminal 106 which joint is positioned on the side of the semiconductor apparatus 100 (the crack 50 which occurs in (i) an Sn—Cu alloy layer generated in a vicinity of the joint interface of the external connection terminal 106 by formation of the external connection terminal 106 directly above the conductor section 104 or in (ii) a solder portion in a vicinity thereof). Hereinafter, the vicinity of the joint interface of the external connection terminal 106 means the vicinity of the joint on the side of the semiconductor apparatus 100.
At this time, in the semiconductor apparatus 100 packaged on the package substrate 800, only the external connection terminal 106 serves as a joint portion, so that only the external connection terminal 106 supports the semiconductor apparatus 100.
Thus, in case where the crack 50 occurs in the vicinity of the joint interface of the external connection terminal 106, when a force is exerted in a direction in which the external connection terminal 106 and the conductor section 104 are separated from each other (in a direction in which the crack 50 expands), the continuous joint interface having no gap allows the crack 50 to immediately expand inwardly from the outer edge even with a weak force.
As a result, the crack 50 causes the joint portion to be in a breakage mode in which the external connection terminal 106 and the conductor section 104 are directly separated from each other in a vertical direction. That is, the crack 50 causes the external connection terminal 106 to be immediately broken, which results in electric openness.
However, the conductor section 104 has the through hole 105, so that the crack 50 reaches the through hole 105, which is relatively large, while expanding. At this time, the joint interface has a gap in the direction in which the crack 50 expands, so that a wall filled with a material constituting the external connection terminal 106 appears.
A force for generating the crack 50 in a portion other than the joint interface of the external connection terminal 106 is stronger than the force for expanding the crack 50 in the vicinity of the joint interface. Thus, when the crack 50 reaches the through hole 105 filled with the external connection terminal 106, expansion of the crack 50 stops in a vicinity of an outer edge of the through hole 105 of the conductor section 104. Further, the cut portion is freely movable in a horizontal direction to some extent, so that the cut portion is resistive against a slight force.
Thus, connection of the external connection terminal 106 is secured, so that this does not result in immediate electric openness. That is, it is possible to extend a time period from occurrence of the crack 50 to complete breakage of the external connection terminal 106.
Further, the solder constituting the external connection terminal 106 is provided also on an outer edge internally positioned in the through hole 105 of the conductor section 104. Thus, an anchor effect thereof improves the connection strength.
In this manner, the semiconductor apparatus 100 of the present embodiment is arranged so as to include: the conductor section 104 provided on a surface of the semiconductor chip 101 so as to input and output an electric signal; and the external connection terminal 106 provided on the surface of the conductor section 104 so as to joint the conductor section 104 to the package substrate 800, wherein the through hole 105 is formed on the surface of the conductor section 104 so as to pierce a center of the surface of the conductor section 104, and the external connection terminal 106 is formed along the through hole 105.
Generally, when the crack 50 occurs in the external connection terminal 106's outer edge in the vicinity of the joint interface due to the repetitive stresses and the impulse, the continuous joint interface in the direction in which the crack 50 expands allows the crack 50 to immediately expand inwardly from the outer edge of the external connection terminal 106.
However, according to the foregoing arrangement, the though hole 105 is formed on the surface of the conductor section 104 so as to pierce the center of the surface of the conductor section 104 and the external connection terminal 106 is formed along the through hole 105, so that the crack 50 which immediately expands inwardly from the outer edge due to the continuous joint interface reaches the through hole 105 while expanding. At this time, the joint interface has a gap in the direction in which the crack 50 expands, so that the wall filled with the material constituting the external connection terminal 106 appears.
A force for generating the crack 50 in a portion other than the joint interface of the external connection terminal 106 is stronger than the force for expanding the crack 50 in the vicinity of the joint interface. Thus, when the crack 50 reaches the through hole 105 filled with the external connection terminal 106, expansion of the crack 50 stops in the vicinity of the outer edge of the through hole 105.
Thus, connection of the external connection terminal 106 is secured, which does not result in immediate electric openness. That is, it is possible to extend a time period from occurrence of the crack 50 to complete breakage of the external connection terminal 106.
Thus, it is possible to enhance the resistance against the repetitive stresses and the impulse. Therefore, it is possible to prevent immediate breakage of the external connection terminal 106, thereby improving the packaging reliability.
In this manner, the semiconductor apparatus 100 of the present embodiment allows enhancement of the resistance against the repetitive stresses and the impulse and realizes higher packaging reliability.
Further, the through hole 105 is formed on the surface of the conductor section 104 positioned inside the external connection terminal 106, so that it is possible to exert the foregoing effect without having any influence on appearance of the semiconductor apparatus 100. Furthermore, it is not necessary to provide a conventional stress relief layer, so that it is possible to reduce the number of parts.
Incidentally, the foregoing arrangement of the semiconductor apparatus 100 is applicable to the case where there is the external connection terminal 106 above the electrode pad 102. However, the semiconductor chip 101 may be stored in another semiconductor apparatus to be wire-bonded. In this case, it is often that the electrode pad 102 is disposed in a vicinity of an outer edge of the semiconductor chip 101.
Thus, in case of packaging the semiconductor chip 101 as a surface-mounted package, it is necessary to extend the conductor section 104 in order to connect the external connection terminal 106 and the electrode pad 102 to each other. However, when a portion other than a region where the external connection terminal 106 is to be provided is exposed by extending the conductor section 104, not only corrosion of the portion but also current leak occur.
With reference to
In addition to the arrangement of the semiconductor apparatus 100, the semiconductor apparatus 120 includes the insulation film 107. However, as illustrated in
The conductor section 104 is formed so as to connect the external connection terminal 106 and the electrode pad 102 to each other. Therefore, even if the electrode pad 102 is disposed in the vicinity of the outer edge of the semiconductor chip 101 and is not positioned below the external connection terminal 106, it is possible to connect the electrode pad 102 and the external connection terminal 106 to each other by extending the conductor section 104.
The insulation film 107 covers not only the conductor section 104 extended as a wiring but also a periphery of the external connection terminal 106. Further, a size of the conductor section 104 is larger than the aforementioned size so that the increment corresponds to an amount of the insulation film 107 with which the outline of the top face of the conductor section 104 provided on the external connection terminal 106 is coated. For example, if the amount of the insulation film 107 with which the outline is coated is 0.015 mm, a diameter of the conductor section 104 is set to 0.3 mm.
As a result, even if the electrode pad 102 is disposed in the vicinity of the outer edge of the semiconductor chip 101 and the conductor section 104 is extended and exposed so as to connect the external connection terminal 106 and the electrode pad 102 to each other, the exposed portion of the conductor section 104 is covered by the insulation film 107, so that it is possible to prevent corrosion of the exposed portion and occurrence of current leak.
Further, in providing the external connection terminal 106 on the conductor section 104, the external connection terminal 106 is formed while melting the solder constituting the external connection terminal 106. At this time, air is included in the solder, so that this may result in occurrence of voids in the external connection terminal 106. The void decreases the packaging reliability, so that it is not preferable that there is any void.
Thus, it is possible to reduce the voids by providing a groove 108, extending from the through hole 105 in the center of the conductor section 104 to the outer edge of the conductor section 104, on the conductor section 104 provided on the external connection terminal 106.
With reference to
In addition to the arrangement of the semiconductor apparatus 100, the semiconductor apparatus 140 includes the groove 108 provided on the conductor section 104.
The groove 108 is formed so as to extend from the through hole 105 in the center of the conductor section 104 to the outer edge of the conductor section 104. Therefore, the surface of the conductor section 104 has not an O-shape but a C-shape.
As a result, in melting the solder constituting the external connection terminal 106 so as to provide the external connection terminal 106 on the conductor section 104, the groove 108 allows reduction of air included and kept in the solder. Thus, it is possible to finally suppress presence of voids in the external connection terminal 106 and improve the packaging reliability.
With reference to
First, an arrangement of a semiconductor apparatus 200 of the present embodiment is described as follows with reference to
As illustrated in
The conductor section 204 is arranged by removing the through hole 105 from the conductor section 104.
The protrusion 209 has a flat and substantially cylindrical shape and is provided on a center of a surface of the conductor section 204 so as to be positioned inside the external connection terminal 106. That is, the protrusion 209 is formed on a face, at which the external connection terminal 106 and the conductor section 204 are in contact with each other, so as to be covered by the external connection terminal 106.
Further, the protrusion 209 is made of polymer material such as polyimide, polybenzoxazole (PBO), and benzocyclobutene (BCB), and is formed by photolithography or screen printing.
It is preferable that a diameter of the protrusion 209 is ⅓ to ⅔ of a diameter of the conductor section 204. In the present embodiment, in case where a pitch of the external connection terminals 106 is 0.5 mm for example, the diameter of the conductor section 204 is 0.27 mm and the diameter of the protrusion 209 is 0.09 to 0.18 mm.
Next, with reference to
The semiconductor apparatus 200 is packaged on the package substrate 800 by connecting metals 802 of the package substrate 800 to the external connection terminals 106 of the semiconductor apparatus 200.
In case where the crack 50 occurs in the external connection terminal 106 due to the repetitive stresses and impact, if a force is exerted in a direction in which the external connection terminal 106 and the conductor section 204 are separated at the crack 50 (a direction in which the crack 50 expands), even a weak force causes the crack 50 to immediately expand inwardly from an outer edge since the joint interface is continuously formed without any gap.
As a result, the crack 50 causes the joint portion to be in a breakage mode in which the external connection terminal 106 and the conductor section 204 are directly separated from each other in a vertical direction. That is, the crack 50 causes the external connection terminal 106 to be immediately broken, which results in electric openness.
However, the protrusion 209 is formed on the conductor section 204, so that the crack 50 reaches the protrusion 209 while expanding. At this time, the joint interface has a gap in the direction in which the crack 50 expands, so that a wall of the protrusion 209 appears.
Thus, when the crack 50 reaches the protrusion 209, presence of an inflectional portion referred to as the protrusion 209 causes the stress to be alleviated, so that expansion of the crack 50 stops in the vicinity of the outer edge. Further, the cut portion is freely movable in a horizontal direction to some extent, so that the cut portion is resistive against a slight force.
Thus, connection of the protrusion 209 and the external connection terminal 106 is secured, so that this does not result in immediate electric openness. That is, it is possible to extend a time period from occurrence of the crack 50 to complete breakage of the external connection terminal 106.
Further, the protrusion 209 is made of the polymer material which is more likely to be deformed than the solder, so that the protrusion 209 itself alleviates the stress exerted to the external connection terminal 106, thereby further enhancing the resistance particularly against the repetitive stresses. As a result, it is possible to improve the packaging reliability.
In this manner, the semiconductor apparatus 200 of the present embodiment is arranged so as to include: the conductor section 204 provided on the surface of the semiconductor chip 101 so as to input and output an electric signal; and the external connection terminal 106 provided on the surface of the conductor section 204 so as to joint the conductor section 204 to the package substrate 800, wherein the conductor section 204 has the protrusion 209 which is formed in a flat and substantially cylindrical shape on the center of the surface of the conductor section 204 so as to be covered by the external connection terminal 106, and the external connection terminal 106 is formed along the protrusion 209.
Generally, when the crack 50 occurs in the external connection terminal 106's outer edge in the vicinity of the joint interface due to the repetitive stresses and the impulse, the continuous joint interface in the direction in which the crack 50 expands allows the crack 50 to immediately expand inwardly from the outer edge of the external connection terminal 106.
However, according to the foregoing arrangement, the protrusion 209 is formed in a flat and substantially cylindrical shape on the center of the surface of the conductor section 204 so as to be covered by the external connection terminal 106, and the external connection terminal 106 is formed along the protrusion 209, so that the crack 50 which immediately expands inwardly from the outer edge due to the continuous joint interface reaches the protrusion 209 while expanding. At this time, the joint interface has a gap in the direction in which the crack 50 expands, so that the wall of the protrusion 209 appears.
Thus, when the crack 50 reaches the protrusion 209, presence of an inflectional portion referred to as the protrusion 209 causes the stress to be alleviated, so that expansion of the crack 50 stops in the vicinity of the outer edge.
As a result, connection of the protrusion 209 and the external connection terminal 106 is secured, which does not result in immediate electric openness. That is, it is possible to extend a time period from occurrence of the crack 50 to complete breakage of the external connection terminal 106.
Thus, it is possible to enhance the resistance against the repetitive stresses and the impulse. Therefore, it is possible to prevent immediate breakage of the external connection terminal 106, thereby improving the packaging reliability.
In this manner, the semiconductor apparatus 200 of the present embodiment allows enhancement of the resistance against the repetitive stresses and the impulse and realizes higher packaging reliability.
Further, the protrusion 209 is made of the polymer material which is more likely to be deformed than the solder, so that the protrusion 209 itself alleviates the stress exerted to the external connection terminal 106, thereby further enhancing the resistance particularly against the repetitive stresses. As a result, it is possible to improve the packaging reliability.
Further, the protrusion 209 is formed on the surface of the conductor section 204 positioned inside the external connection terminal 106, so that it is possible to exert the foregoing effect without having any influence on appearance of the semiconductor apparatus 200.
Also in the semiconductor apparatus 200, the semiconductor chip 101 may be stored in another semiconductor apparatus to be wire-bonded. In this case, it is often that the electrode pad 102 is disposed in a vicinity of an outer edge of the semiconductor chip 101.
Thus, in case of packaging the semiconductor chip 101 as a surface-mounted package, it is necessary to extend the conductor section 204 in order to connect the external connection terminal 106 and the electrode pad 102 to each other as in Embodiment 1. However, when a portion other than a region where the external connection terminal 106 is to be formed is exposed by extending the conductor section 204, not only corrosion of the portion but also current leak occur.
With reference to
In addition to the arrangement of the semiconductor apparatus 200, the semiconductor apparatus 220 includes the insulation film 207. However, as illustrated in
The conductor section 204 is formed so as to connect the external connection terminal 106 and the electrode pad 102 to each other. Therefore, even if the electrode pad 102 is disposed in the vicinity of the outer edge of the semiconductor chip 101 and is not positioned below the external connection terminal 106, it is possible to connect the electrode pad 102 and the external connection terminal 106 to each other by extending the conductor section 204.
The insulation film 207 covers not only the conductor section 204 extended as a wiring but also a periphery of the external connection terminal 106. Further, a size of the conductor section 204 is larger than the aforementioned size so that the increment corresponds to an amount of the insulation film 207 with which the outline of the top face of the conductor section 204 provided on the external connection terminal 106 is coated. For example, if the amount of the insulation film 207 with which the outline is coated is 0.015 mm, a diameter of the conductor section 204 is set to 0.3 mm.
As a result, even if the electrode pad 102 is disposed in the vicinity of the outer edge of the semiconductor chip 101 and the conductor section 204 is extended and exposed so as to connect the external connection terminal 106 and the electrode pad 102 to each other, the exposed portion of the conductor section 204 is covered by the insulation film 207, so that it is possible to prevent corrosion of the exposed portion and occurrence of current leak.
Note that, the insulation film 207 is formed in the same step and at the same time as in the protrusion 209. This will be detailed in a below-described Embodiment 6.
With reference to
First, an arrangement of a semiconductor apparatus 300 of the present embodiment is described as follows with reference to
As illustrated in
The protrusion 309 is provided inside the external connection terminal 106 by filling the through hole 105 of the conductor section 104 so as to protrude from the conductor section 104 toward the external connection terminal 106. In more detail, the protrusion 309 is formed so as to be covered the external connection terminal 106 by applying a material along the shape of the through hole 105 of the conductor section 104 so as to have a cyclic outer edge with a certain film thickness.
Further, the protrusion 309 is made of polymer material such as polyimide, polybenzoxazole (PBO), and benzocyclobutene (BCB), and is formed by photolithography or screen printing.
It is preferable that a diameter of the through hole 105 is about ⅓ of the conductor section 104 and a diameter of the outer edge of the protrusion 309 on the conductor section 104 is about ⅔ of the diameter of the conductor section 104. In the present embodiment, in case where a pitch of the external connection terminals 106 is 0.5 mm for example, the diameter of the conductor section 104 is 0.27 mm, and the diameter of the through hole 105 is 0.09 mm, and the diameter of the outer edge of the protrusion 309 is 0.18 mm.
Next, the following describes how the crack acts on the external connection terminal 106 in providing the semiconductor apparatus 300 onto the package substrate.
As in the aforementioned descriptions, also when the semiconductor apparatus 300 is packaged on the package substrate and the crack occurs in the external connection terminal 106 due to the repetitive stresses and the impulse, the crack reaches the protrusion 309 while expanding, so that expansion of the crack stops. That is, presence of an inflectional portion referred to as the protrusion 309 causes the stress to be alleviated, so that expansion of the crack stops in the vicinity of the outer edge of the protrusion 309. Further, the cut portion is freely movable in a horizontal direction to some extent, so that the cut portion is resistive against a slight force.
Thus, connection of the protrusion 309 and the external connection terminal 106 is secured, which does not result in immediate electric openness. That is, it is possible to extend a time period from occurrence of the crack to complete breakage of the external connection terminal 106.
Further, as in the protrusion 209 of the semiconductor apparatus 200 of Embodiment 2, the protrusion 309 is made of the polymer material which is more likely to be deformed than the solder, so that the protrusion 309 itself alleviates the stress exerted to the external connection terminal 106, thereby further enhancing the resistance particularly against the repetitive stresses. As a result, it is possible to improve the packaging reliability.
Further, the semiconductor apparatus 300 is arranged so that the through hole 105 formed on the conductor section 104 is filled with the material constituting the protrusion 309. Thus, an anchor effect thereof allows the protrusion 309 to be provided more stably.
In this manner, the semiconductor apparatus 300 of the present embodiment is arranged so as to include: the conductor section 104 provided on the surface of the semiconductor chip 101 so as to input and output an electric signal; and the external connection terminal 106 formed on the surface of the conductor section 104 so as to joint the conductor section 104 to the package substrate, wherein the conductor section 104 is such that the protrusion 309 is formed on the surface of the conductor section 104 so as to be positioned along the through hole 105 piercing the center of the surface of the conductor section 104 and so as to protrude from the conductor section 104 and so as to be covered by the external connection terminal 106, and the external connection terminal 106 is formed along the protrusion 309.
Generally, when the crack occurs in the external connection terminal 106's outer edge in the vicinity of the joint interface due to the repetitive stresses and the impulse, the continuous joint interface in the direction in which the crack expands allows the crack to immediately expand inwardly from the outer edge of the external connection terminal 106.
However, according to the foregoing arrangement, the conductor section 104 is such that the protrusion 309 is formed on the surface of the conductor section 104 so as to be positioned along the through hole 105 piercing the center of the surface of the conductor section 104 and so as to protrude from the conductor section 104 and so as to be covered by the external connection terminal 106, and the external connection terminal 106 is formed along the protrusion 309, so that the crack which immediately expands inwardly from the outer edge due to the continuous joint interface reaches the protrusion 309 while expanding. At this time, the joint interface has a gap in the direction in which the crack expands, so that the wall of the protrusion 309 appears.
Thus, when the crack reaches the protrusion 309, presence of an inflectional portion referred to as the protrusion 309 causes the stress to be alleviated, so that expansion of the crack stops in the vicinity of the outer edge the protrusion 309.
As a result, connection of the protrusion 309 and the external connection terminal 106 is secured, which does not result in immediate electric openness. That is, it is possible to extend a time period from occurrence of the crack to complete breakage of the external connection terminal 106.
Thus, it is possible to enhance the resistance against the repetitive stresses and the impulse. Therefore, it is possible to prevent immediate breakage of the external connection terminal 106, thereby improving the packaging reliability.
In this manner, the semiconductor apparatus 300 of the present embodiment allows enhancement of the resistance against the repetitive stresses and the impulse and realizes higher packaging reliability.
Further, the protrusion 309 is made of the polymer material which is more likely to be deformed than the solder, so that the protrusion 309 itself alleviates the stress exerted to the external connection terminal 106, thereby further enhancing the resistance particularly against the repetitive stresses. As a result, it is possible to improve the packaging reliability.
Further, the protrusion 309 protrudes from the conductor section 104 so as to fill the through hole 105 of the conductor section 104 positioned inside the external connection terminal 106, so that it is possible to exert the foregoing effect without having any influence on appearance of the semiconductor apparatus 300.
Also in the semiconductor apparatus 300, the semiconductor chip 101 may be stored in another semiconductor apparatus to be wire-bonded. In this case, it is often that the electrode pad 102 is disposed in a vicinity of an outer edge of the semiconductor chip 101.
With reference to
In addition to the arrangement of the semiconductor apparatus 300, the semiconductor apparatus 320 includes the insulation film 307. However, as illustrated in
The insulation film 307 covers not only the conductor section 104 extended as a wiring but also a periphery of the external connection terminal 106. Further, a size of the conductor section 104 is larger than the aforementioned size so that the increment corresponds to an amount of the insulation film 307 with which the outline of the top face of the conductor section 104 provided on the external connection terminal 106 is coated. For example, if the amount of the insulation film 307 with which the outline is coated is 0.015 mm, a diameter of the conductor section 104 is set to 0.3 mm.
As a result, even if the electrode pad 102 is disposed in the vicinity of the outer edge of the semiconductor chip 101 and the conductor section 104 is extended and exposed so as to connect the external connection terminal 106 and the electrode pad 102 to each other, the exposed portion of the conductor section 104 is covered by the insulation film 307, so that it is possible to prevent corrosion of the exposed portion and occurrence of current leak.
Note that, the insulation film 307 is formed in the same step and at the same time as in the protrusion 309. This will be detailed in a below-described Embodiment 7.
With reference to
Note that, the present embodiment is arranged in the same manner as in Embodiment 1, Embodiment 2, and Embodiment 3 except for points described below. Further, for convenience in descriptions, the same reference numerals are given to members having the same functions as the members illustrated in the drawings of Embodiment 1, Embodiment 2, and Embodiment 3, and descriptions thereof are omitted.
First, an arrangement of a semiconductor apparatus 400 of the present embodiment is described as follows with reference to
As illustrated in
The dam 410 prevents a material of the protrusion 411 from extending over an area of the conductor section 204 in forming the protrusion 411. The dam 410 is formed in a cyclic shape before forming the protrusion 411.
Further, the dam 410 is made of polymer material such as polyimide, polybenzoxazole (PBO), and benzocyclobutene (BCB), and is formed by photolithography or screen printing.
The protrusion 411 has a dome shape and is provided inside the external connection terminal 106 so as to be positioned in a center of a surface of the conductor section 204. That is, the protrusion 411 is formed so that a face at which the external connection terminal 106 and the conductor section 204 are in contact with each other is covered by the external connection terminal 106.
Note that, a volume of the protrusion 411 is made larger than the protrusion 209 of Embodiment 2 in order to enhance the effect of alleviating the stress exerted to the external connection terminal 106. Further, the protrusion 411 is made of elastomer and is formed by dispenser or screen printing.
It is preferable that a diameter of the protrusion 411 is ⅓ to ⅔ of a diameter of the conductor section 204. In the present embodiment, in case where a pitch of the external connection terminal 106 is 0.5 mm for example, the diameter of the conductor section 204 is 0.27 mm, and the diameter of the protrusion 411 is 0.09 mm to 0.18 mm. A height of the protrusion 411 is 0.03 to 0.15 mm.
Next, the following describes how the crack acts on the external connection terminal 106 in packaging the semiconductor apparatus 400 onto the package substrate.
As in the aforementioned descriptions, also when the semiconductor apparatus 400 is packaged on the package substrate and the crack occurs in the external connection terminal 106 due to the repetitive stresses and the impulse, the crack reaches the dam 410 while expanding, so that expansion of the crack stops. That is, presence of an inflectional portion referred to as the dam 410 causes the stress to be alleviated, so that expansion of the crack stops in the vicinity of the outer edge of the dam 410. Further, the cut portion is freely movable in a horizontal direction to some extent, so that the cut portion is resistive against a slight force.
Thus, connection among the dam 410, the protrusion 411, and the external connection terminal 106 is secured, which does not result in immediate electric openness. That is, it is possible to extend a time period from occurrence of the crack to complete breakage of the external connection terminal 106.
Further, the protrusion 411 is made of less elastic elastomer, so that the protrusion 411 alleviates the repetitive stresses, thereby reducing a stress load exerted to the joint portion. Therefore, the crack hardly occurs in the external connection terminal 106. As a result, it is possible to further improve the packaging reliability.
In this manner, the semiconductor apparatus 400 of the present embodiment is arranged so as to include: the conductor section 204 provided on the surface of the semiconductor chip 101 so as to input and output an electric signal; and the external connection terminal 106 provided on the surface of the conductor section 204 so as to joint the conductor section 204 to the package substrate, wherein the conductor section 204 includes (i) the protrusion 411 formed in a dome shape on the center of the surface of the conductor section 204 so as to be covered by the external connection terminal 106 and (ii) the dam 410 formed so as to surround the protrusion 411 and so as to be covered by the external connection terminal 106, and the external connection terminal 106 is formed along the dam 410 and the protrusion 411.
Generally, when the crack occurs in the external connection terminal 106's outer edge in the vicinity of the joint interface due to the repetitive stresses and the impulse, the continuous joint interface in the direction in which the crack expands allows the crack to immediately expand inwardly from the outer edge of the external connection terminal 106.
However, according to the foregoing arrangement, the conductor section 204 includes (i) the protrusion 411 formed in a dome shape on the center of the surface of the conductor section 204 so as to be covered by the external connection terminal 106 and (ii) the dam 410 formed so as to surround the protrusion 411 and so as to be covered by the external connection terminal 106, and the external connection terminal 106 is formed along the dam 410 and the protrusion 411, so that the crack which immediately expands inwardly from the outer edge due to the continuous joint interface reaches the dam 410 while expanding. At this time, the joint interface has a gap in the direction in which the crack expands, so that the wall of the dam 410 appears.
Thus, when the crack reaches the dam 410, presence of an inflectional portion referred to as the dam 410 causes the stress to be alleviated, so that expansion of the crack stops in the vicinity of the outer edge of the dam 410.
As a result, connection among the dam 410, the protrusion 411, and the external connection terminal 106 is secured, which does not result in immediate electric openness. That is, it is possible to extend a time period from occurrence of the crack to complete breakage of the external connection terminal 106.
Thus, it is possible to enhance the resistance against the repetitive stresses and the impulse. Therefore, it is possible to prevent immediate breakage of the external connection terminal 106, thereby improving the packaging reliability.
In this manner, the semiconductor apparatus 400 of the present embodiment allows enhancement of the resistance against the repetitive stresses and the impulse and realizes higher packaging reliability.
Further, the protrusion 411 is made of the less elastic elastomer, so that the repetitive stresses are alleviated, thereby reducing a stress load exerted to the joint portion. Therefore, the crack hardly occurs in the external connection terminal 106. As a result, it is possible to further improve the packaging reliability.
Further, the dam 410 and the protrusion 411 are provided on the surface of the conductor section 204 so as to be covered by the external connection terminal 106, so that it is possible to exert the foregoing effect without having any influence on appearance of the semiconductor apparatus 400.
Also in the semiconductor apparatus 400, the semiconductor chip 101 may be stored in another semiconductor apparatus to be wire-bonded. In this case, it is often that the electrode pad 102 is disposed in a vicinity of an outer edge of the semiconductor chip 101.
With reference to
In addition to the arrangement of the semiconductor apparatus 400, the semiconductor apparatus 420 includes the insulation film 407. However, as illustrated in
The insulation film 407 covers not only the conductor section 204 extended as a wiring but also a periphery of the external connection terminal 106. Further, a size of the conductor section 204 is larger than the aforementioned size so that the increment corresponds to an amount of the insulation film 407 with which the outline of the top face of the conductor section 204 provided on the external connection terminal 106 is coated. For example, if the amount of the insulation film 407 with which the outline is coated is 0.015 mm, a diameter of the conductor section 204 is set to 0.3 mm.
As a result, even if the electrode pad 102 is disposed in the vicinity of the outer edge of the semiconductor chip 101 and the conductor section 204 is extended and exposed so as to connect the external connection terminal 106 and the electrode pad 102 to each other, the exposed portion of the conductor section 204 is covered by the insulation film 407, so that it is possible to prevent corrosion of the exposed portion and occurrence of current leak.
Note that, the insulation film 407 is formed in the same step and at the same time as in the dam 410. This will be detailed in a below-described Embodiment 8.
With reference to
Each of
A manufacturing method of the semiconductor apparatus 100 illustrated in Embodiment 1 is described as follows.
First, as illustrated in
Next, as illustrated in
Subsequently, as illustrated in
Subsequently, as illustrated in
Subsequently, as illustrated in
Subsequently, as illustrated in
Lastly, the dicing position 501 is diced by a dicing device into semiconductor chips 101, thereby completing formation of semiconductor apparatuses 100.
In this manner, the semiconductor apparatus 100 illustrated in
With reference to
Each of
A manufacturing method of the semiconductor apparatus 200 illustrated in Embodiment 2 is described as follows.
First, the state illustrated in
Subsequently, as illustrated in
Subsequently, the state illustrated in
Subsequently, as illustrated in
Subsequently, as illustrated in
Subsequently, as illustrated in
Lastly, the dicing position 501 is diced by a dicing device into semiconductor chips 101, thereby completing formation of semiconductor apparatuses 200.
In this manner, the semiconductor apparatus 200 illustrated in
Next, a manufacturing method of the semiconductor apparatus 220 illustrated in Embodiment 2 is described as follows.
Each of
First, the states illustrated in
Note that, in case where the insulation film 207 is non-photosensitive polymer in
Subsequently, as illustrated in
Subsequently, as illustrated in
Lastly, the dicing position 501 is diced by a dicing device into semiconductor chips 101, thereby completing formation of semiconductor apparatuses 220.
In this manner, the semiconductor apparatus 220 illustrated in
In this case, as illustrated in
With reference to
Each of
First, the states illustrated in
Next, as illustrated in
Subsequently, as illustrated in
Subsequently, as illustrated in
Lastly, the dicing position 501 is diced by a dicing device into semiconductor chips 101, thereby completing formation of semiconductor apparatuses 300.
In this manner, the semiconductor apparatus 300 illustrated in
Further, also in case of a manufacturing process of the semiconductor apparatus 320, the semiconductor apparatus 320 is manufactured in the same manner as in the manufacturing process of the semiconductor apparatus 220, so that the protrusion 309 can be formed by using the same material and at the same time as in the insulation film 307. Thus, it is possible to carry out a step of manufacturing a conventional wafer CSP without any change. Therefore, the cost does not increase.
With reference to
Each of
First, the states illustrated in
Subsequently, as illustrated in
Subsequently, as illustrated in
Subsequently, as illustrated in
Lastly, the dicing position 501 is diced by a dicing device into semiconductor chips 101, thereby completing formation of semiconductor apparatuses 400.
In this manner, the semiconductor apparatus 400 illustrated in
Further, also in case of a manufacturing process of the semiconductor apparatus 420, the semiconductor apparatus 420 is manufactured in the same manner as in the manufacturing process of the semiconductor apparatuses 220 and 320, so that the dam 410 can be formed by using the same material and at the same time as in the insulation film 407. Thus, it is possible to carry out a step of manufacturing a conventional wafer CSP without any change. Therefore, the cost does not increase.
With reference to
Each of the aforementioned embodiments described the structure of the semiconductor apparatus as the wafer level CSP. However, the semiconductor apparatus of the present embodiment may be applied not only to the wafer level CSP but also another semiconductor apparatus in which a solder is provided on an interposer substrate as the external connection terminal. Examples of the aforementioned another semiconductor apparatus include a ball grid array package (BGA) and the like.
In the present embodiment, the arrangement of the BGA semiconductor apparatus 600 is described as follows as an example of the aforementioned another semiconductor apparatus.
First, with reference to
The conventional semiconductor apparatus 650 includes a semiconductor chip 601, an electrode pad 602, an insulation layer 603, an interposer substrate 604 (an insulation base section 604a, a surface protection resist section 604b, a conductor section 604c including a metal pattern section and a through hole section), a metal wire 605, an external connection terminal 606 (joint terminal), a sealing resin 607, and a die-bond sheet 608.
A surface of the semiconductor chip 601 is covered by the insulation layer 603. Note that, the insulation layer 603 has an opening in a position corresponding to the electrode pad 602 on a surface of the semiconductor chip 601 which electrode pad 602 is bonded to the metal wire 605.
Further, the metal wire 605 has another end which is not connected to the electrode pad 602, and the aforementioned another end is bonded to the conductor section 604c of the interposer substrate 604 above which the semiconductor chip 601 is fixed via the die-bond sheet 608. The conductor section 604c is wire-connected to the external connection terminal 606.
Further, the semiconductor chip 601 is covered by not only the metal wire 605 but also the sealing resin 607. In this manner, the semiconductor apparatus 650 is entirely protected.
While, in addition to the arrangement of the semiconductor apparatus 650, the semiconductor apparatus 600 of the present embodiment is arranged so that a through hole 609 (level difference) is formed on the conductor section 604c of the interposer substrate 604.
Note that, the conductor section 604c, the through hole 609, and the external connection terminal 606 of the semiconductor apparatus 600 of the present embodiment respectively correspond to the conductor section 104, the through hole 105, and the external connection terminal 106 of the semiconductor apparatus 100 of Embodiment 1.
As a result, also the semiconductor apparatus 600 of the present embodiment can exhibit the same effect as in the semiconductor apparatus 100 of Embodiment 1.
Note that, the foregoing description explained the case where the through hole 609 is formed in the conductor section 604c of the interposer substrate 604. However, the present invention is not limited to this, and the structures of the semiconductor apparatuses illustrated in Embodiments 1 to 4 may be adopted.
The present invention is not limited to the description of the embodiments above, but may be altered by a skilled person within the scope of the claims. An embodiment based on a proper combination of technical means disclosed in different embodiments is encompassed in the technical scope of the present invention.
The present invention is favorably applicable to a semiconductor apparatus including therein a semiconductor integrated circuit used for an electronic device such as an information communication device.
As described above, a semiconductor apparatus of the present embodiment includes: a conductor section provided on a surface of a semiconductor chip so as to input and output an electric signal; and a joint terminal provided on the surface of the conductor section so as to joint the conductor section to a package substrate, wherein the conductor section has a level difference on its surface, and the joint terminal is provided along the level difference.
Therefore, the semiconductor apparatus of the present invention allows enhancement of the resistance against the repetitive stresses and the impulse and realizes higher packaging reliability. Further, the level difference is formed on the surface of the conductor section positioned inside the joint terminal, so that it is possible to exert the foregoing effect without having any influence on appearance of the semiconductor apparatus.
Further, a method of the present embodiment for manufacturing a semiconductor apparatus including: a conductor section provided on a surface of a semiconductor chip so as to input and output an electric signal; and a joint terminal provided on the surface of the conductor section so as to joint the conductor section to a package substrate, said method comprising the steps of: forming a level difference on the surface of the conductor section; and forming the joint terminal along the level difference.
Therefore, the method according to the present invention for manufacturing the semiconductor apparatus allows enhancement of the resistance against the repetitive stresses and the impulse and realizes higher packaging reliability. Further, the level difference is formed on the surface of the conductor section positioned inside the joint terminal, so that it is possible to manufacture the semiconductor apparatus which can exert the foregoing effect without having any influence on appearance of the semiconductor apparatus.
Further, it is preferable to arrange the semiconductor apparatus of the present embodiment so that a through hole which pierces a center of the surface of the conductor section is provided so as to form the level difference.
Further, it is preferable to arrange the method of the present embodiment so that a through hole which pierces a center of the surface of the conductor section is provided so as to form the level difference.
According to the foregoing arrangements, the level difference is formed by forming the through hole piercing the center of the surface of the conductor section, so that mere formation of the through hole makes it possible to easily form the level difference.
Further, it is preferable to arrange the semiconductor apparatus of the present embodiment so that a protrusion formed in a cylindrical shape so as to be covered by the joint terminal is provided in the center of the surface of the conductor section so as to form the level difference.
Further, it is preferable to arrange the method of the present embodiment for manufacturing a semiconductor apparatus so that a protrusion formed in a cylindrical shape so as to be covered by the joint terminal is provided in the center of the surface of the conductor section so as to form the level difference.
According to the foregoing arrangements, a protrusion formed in a cylindrical shape so as to be covered by the joint terminal is provided in the center of the surface of the conductor section so as to form the level difference, so that mere formation of the protrusion makes it possible to easily form the level difference.
Further, it is preferable to arrange the semiconductor apparatus of the present embodiment so that a protrusion formed along the through hole piercing the center of the surface of the conductor section so as to protrude from the conductor section and so as to be covered by the joint terminal is provided so as to form the level difference.
Further, it is preferable to arrange the method of the present embodiment for manufacturing a semiconductor apparatus so that a protrusion formed along the through hole piercing the center of the surface of the conductor section so as to protrude from the conductor section and so as to be covered by the joint terminal is provided so as to form the level difference.
According to the foregoing arrangements, a protrusion formed along the through hole piercing the center of the surface of the conductor section so as to protrude from the conductor section and so as to be covered by the joint terminal is provided so as to form the level difference, mere formation of the protrusion makes it possible to easily form the level difference.
Further, it is preferable to arrange the semiconductor apparatus of the present embodiment so that: a protrusion formed in the center of the surface of the conductor section and formed in a dome shape so as to be covered by the joint terminal is provided, and a dam surrounding the protrusion and formed so as to be covered by the joint terminal is provided, so as to form the level difference.
Further, it is preferable to arrange the method of the present embodiment for manufacturing a semiconductor apparatus so as to includes the steps of: providing a dam formed in the center of the surface of the conductor section and formed in a circular shape so as to be covered by the joint terminal; and providing a protrusion formed inside the dam and formed in a dome shape so as to be covered by the joint terminal, wherein the steps are carried out so as to form the level difference.
According to the foregoing arrangements, a protrusion formed in the center of the surface of the conductor section and formed in a dome shape so as to be covered by the joint terminal is provided, and a dam surrounding the protrusion and formed so as to be covered by the joint terminal is provided, so as to form the level difference, so that mere formation of the protrusion and the dam makes it possible to easily form the level difference.
Further, it is preferable to arrange the semiconductor apparatus of the present embodiment so as to include an insulation film with which the conductor section is coated.
Further, it is preferable to arrange the method of the present embodiment for manufacturing a semiconductor apparatus so that an exposed portion of the conductor section is coated with an insulation film.
According to the foregoing arrangements, an exposed portion of the conductor section is coated with an insulation film, so that it is possible to prevent corrosion of the exposed portion and occurrence of an electric leak.
Further, it is preferable to arrange the semiconductor apparatus of the present embodiment so that the protrusion is made of polymer material.
According to the foregoing arrangement, the protrusion is made of the polymer material which is more likely to be deformed than the solder used as a material constituting the joint terminal for example, so that the protrusion itself alleviates the stress exerted to the joint terminal, thereby further enhancing the resistance particularly against the repetitive stresses. As a result, it is possible to improve the packaging reliability.
Further, it is preferable to arrange the semiconductor apparatus of the present embodiment: the insulation film is made of the same material as the protrusion, and the protrusion is formed in the same step as the insulation film.
Further, it is preferable to arrange the method of the present embodiment for manufacturing a semiconductor apparatus: the insulation film is made of the same material as the protrusion, and the protrusion is formed in the same step as the insulation film.
According to the foregoing arrangements, the protrusion and the insulation film are formed in the same step, so that it is possible to carry out a conventional step of forming a surface-mounted package without any change. Therefore, it is possible to suppress increase of the cost.
Further, it is preferable to arrange the semiconductor apparatus of the present embodiment so that the protrusion is made of elastomer.
According to the foregoing arrangement, elastomer is less elastic, so that alleviation of repetitive stresses allows reduction of a stress load exerted to the joint portion. Therefore, the crack hardly occurs in the joint terminal. Thus, it is possible to further improve the joint reliability.
Further, it is preferable to arrange the semiconductor apparatus of the present embodiment so that: the insulation film is made of the same material as the dam, and the dam is formed in the same step as the insulation film.
Further, it is preferable to arrange the method of the present embodiment for manufacturing a semiconductor apparatus so that: the insulation film is made of the same material as the dam, and the dam is formed in the same step as the insulation film.
According to the foregoing arrangements, the dam and the insulation film are formed in the same step, so that it is possible to carry out a conventional step of forming a surface-mounted package without any change. Therefore, it is possible to suppress increase of the cost.
Further, it is preferable to arrange the semiconductor apparatus of the present embodiment so that the conductor section has a groove extending from the through hole to an outer edge of the conductor section.
Further, it is preferable to arrange the method of the present embodiment for manufacturing a semiconductor apparatus so that a groove extending from the through hole to an outer edge of the conductor section is formed after forming the through hole and before forming the joint terminal.
According to the foregoing arrangements, in melting the solder constituting the joint terminal so as to provide the joint terminal on the conductor section, the groove allows reduction of air included and kept in the solder. Thus, it is possible to finally suppress presence of voids in the joint terminal and improve the packaging reliability.
The embodiments and concrete examples of implementation discussed in the foregoing detailed explanation serve solely to illustrate the technical details of the present invention, which should not be narrowly interpreted within the limits of such embodiments and concrete examples, but rather may be applied in many variations within the spirit of the present invention, provided such variations do not exceed the scope of the patent claims set forth below.
Number | Date | Country | Kind |
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2006-232810 | Aug 2006 | JP | national |