Semiconductor device and manufacturing method of a semiconductor device

Abstract

A semiconductor device includes a multi-layer substrate and a semiconductor element mounted on the multi-layer substrate. The multi-layer substrate contains a plurality of circuit-formation layers joined by a first resin material. The semiconductor element is mounted on the multi-layer substrate by being joined to the multi-layer substrate by a second resin material. The first resin material and the second resin material are curable in the same heating condition.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an illustration showing an example of a manufacturing process of a conventional chip module;

FIG. 2 is an illustration showing a method of forming an adhesive sheet provided with a conductive paste;

FIG. 3 is an illustration showing a manufacturing method of a multi-chip module according to an embodiment of the present invention; and

FIG. 4 is a cross-sectional view of the multi-chip module according to the embodiment of the present invention.

Claims

1. A semiconductor device comprising: a multi-layer substrate containing a plurality of circuit-formation layers joined by a first resin material; anda semiconductor element mounted on the multi-layer substrate by being joined to said multi-layer substrate by a second resin material,wherein the first resin material and the second resin material are curable in the same heating condition.

2. The semiconductor device as claimed in claim 1, wherein said first resin material and said second resin material are made of the same resin.

3. The semiconductor device as claimed in claim 1, further comprising a heat radiation member joined to the semiconductor element by a third resin material, wherein the third resin material is made of a resin curable in the same heating condition as said first and second resin materials.

4. The semiconductor device as claimed in claim 3, wherein said third resin material is made of the same resin as said first and second resin materials.

5. The semiconductor device as claimed in claim 1, wherein each of said first resin material and said second resin material is formed of an insulating resin and an electrically conductive resin embedded in the insulating resin, and electrodes of said semiconductor element are joined to electrodes of said multi-layer substrate by the electrically conductive resin.

6. The semiconductor device as claimed in claim 5, further comprising a heat radiation member joined to the semiconductor element by a third resin material, wherein the third resin material is made of the same resin as said electrically conductive resin of said first and second resin materials.

7. The semiconductor device as claimed in claim 5, wherein said electrically conductive resin contains electrically conductive particles dispersed in a base resin material and solder diffused in the base material.

8. A manufacturing method of a semiconductor device having a semiconductor element mounted on a multi-layer substrate, comprising: preparing the multi-layer substrate by arranging a first resin material of a sheet shape between a plurality of circuit-formation layers and forming a laminated member by arranging the semiconductor element on the multi-layer substrate via a second resin material of a sheet shape; andcuring the first and second resin materials by heating while pressurizing the laminated member so as to simultaneously join said circuit-formation layers to each other and said semiconductor element.

9. The manufacturing method as claimed in claim 8, including: arranging a heat radiation member on said semiconductor element of said laminated member via a third resin material; andcuring the third resin material simultaneously when heating said laminated member so as to join said heat radiation member to said semiconductor element.

10. The manufacturing method as claimed in claim 8, including: forming said first resin material by filling an electrically conductive resin in openings formed in an insulating resin of a sheet shape at positions corresponding to electrodes of said circuit-formation layer; andforming said second resin material by filling an electrically conductive resin in openings formed in an insulating resin of a sheet shape at positions corresponding to electrodes of said semiconductor element.

11. A manufacturing method as claimed in claim 10, wherein said electrically conductive resin is formed of a base resin and electrically conductive particles dispersed in the base resin, and a metal film is formed on a surface of each of the electrically conductive particles.

12. The manufacturing method as claimed in claim 11, wherein said electrically conductive particles are metal particles, and said metal film is a solder film.