Semiconductor device, electronic apparatus comprising the same, and method for fabrication of substrate for semiconductor device used therein

Abstract

A semiconductor device has upper electrodes and external terminals which are protruding above the both surfaces of a substrate for semiconductor device and connected to each other by penetrating electrodes, a first insulating film covering at least a metal pattern except for the portions of the first insulating film corresponding to the upper electrodes, a second insulating film covering at least another metal pattern except for the portions of the second insulating film corresponding to the external terminals, and a semiconductor element connected to the upper electrodes and placed on the substrate for semiconductor device. The solder-connected surface of the external terminal is positioned to have a height larger than that of a surface of the second insulating film. The semiconductor element is placed on the first insulating film and covered, together with the upper electrodes, with a mold resin.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are schematic structural views each showing a semiconductor device according to a first embodiment of the present invention, of which FIG. 1A is a schematic structural view showing a surface on which a semiconductor element is mounted and FIG. 1B is a cross-sectional view taken along the line A-A of FIG. 1A;

FIG. 2 is a principal-portion schematic structural view showing the semiconductor device according to the first embodiment and the state of the mounting thereof on a mounting circuit board;

FIGS. 3A to 3E are views illustrating the process steps of fabricating a substrate for semiconductor device according to the first embodiment;

FIG. 4A is a top view of an outer configuration of a prototype of the semiconductor device according to the first embodiment, FIGS. 4B and 4C are side views thereof, and FIG. 4D is a bottom view thereof;

FIG. 5A is a top surface view of an outer configuration of another prototype of the semiconductor device according to the first embodiment, FIGS. 5B and 5C are side surface views thereof, and FIG. 5D is a bottom surface view thereof,

FIG. 6 is a principal-portion schematic structural view showing a semiconductor device according to a second embodiment according to the present invention and the state of the mounting thereof on the mounting circuit board;

FIG. 7 is a schematic structural view showing a conventional semiconductor device and the state of the mounting thereof on a mounting circuit board; and

FIGS. 8A and 8B are schematic structural views each showing the state of the mounting of the conventional semiconductor device and a circuit component thereof.

Claims

1. A semiconductor device comprising a semiconductor element and a wiring board, the wiring board having: a substrate having metal patterns formed on both surfaces thereof;an upper electrode and an external terminal each protruding above the metal patterns;a penetrating electrode formed with a metal plate layer penetrating the substrate to provide a connection between the upper electrode and the external terminal;a first surface formed with a first insulating film covering at least the metal pattern except for a portion of the first surface corresponding to the upper electrode; anda second surface formed with a second insulating film covering at least the metal pattern except for a portion of the second surface except for the external terminal, whereinthe semiconductor element is placed on the first surface of the wiring board and connected to the upper electrode andeach of the upper electrode and the external terminal is formed with the metal plate layer and disposed such that a height of a surface of the upper electrode is larger than a height of a surface of the first insulating film and a height of a surface of the external terminal is larger than a height of a surface of the second insulating film.

2. The semiconductor device of claim 1, wherein the semiconductor element is placed on the first insulating film and covered, together with the upper electrode, with a resin.

3. The semiconductor device of claim 1, wherein the external terminal has a stepped portion.

4. The semiconductor device of claim 3, wherein the metal plate layer of the external terminal has a stepped portion and the surface of the second insulating film is positioned between two surfaces, which are the solder-connected principal surface of the external terminal and a surface of the stepped portion.

5. The semiconductor device of claim 1, wherein at least a part of the metal pattern covered with the first insulating film and the metal pattern covered with the second insulating film is connected to a ground terminal.

6. An electronic apparatus comprising a mounting circuit board to which the semiconductor device of claim 1 is connected by using a solder.

7. An electronic apparatus comprising a mounting circuit board to which the semiconductor device of claim 3 is connected by using a solder, wherein, in a connection portion in which the external terminal of the semiconductor device is connected by using the solder to the mounting circuit board, the stepped portion of the external terminal is partly or entirely filled with the solder.

8. A method for fabricating a substrate for a semiconductor device, the method comprising the steps of: preparing a substrate having metal patterns on both surfaces thereof;forming a through hole in the substrate by laser processing, while leaving only the metal pattern at at least a plurality of specified positions on the opposed surface;coating a first resist on a surface of the metal pattern on the opposed surface of the substrate;selectively etching the first resist;performing metal plating to form a metal plate also in the through hole and thereby provide electrical conduction;removing the first resist;coating a second resist over each of the metal patterns on the both surfaces of the substrate; andperforming surface-layer metal plating to form a surface-layer metal plate on a surface of the metal plate and on the exposed metal pattern.

9. The method of claim 8, wherein the step of performing the metal plating to form the metal plate includes forming a portion of the semiconductor device serving as an external terminal into a protruding configuration by stacking the metal plate on the metal pattern.

10. The method of claim 8, wherein the metal pattern is made of Cu metal foil, the metal plate is made of a Cu plate, and the surface-layer metal plate is made of any material selected from the group consisting of a Ni—Au double-layer plate, a Ni—Pd double-layer plate, and a Ni—Pd—Au triple-layer plate.