SEMICONDUCTOR DEVICE

Abstract

One of the aspects of the present invention is to provide a semiconductor device, which includes a radiating plate, a wiring patterned layer on the radiating plate via an insulating layer, at least one semiconductor chip mounted on the wiring patterned layer. The semiconductor chip has a surface electrode. The semiconductor device further includes a conductive lead plate electrically connected with the surface electrode of the semiconductor chip, and a resin package of thermoplastic resin having anisotropic linear expansion coefficient varying based upon directions. The resin package covers the wiring patterned layer, the semiconductor chip, the conductive lead plate, and at least a portion of the radiating plate. The conductive lead plate extends in a direction which provides the resin package with the maximum linear expansion coefficient. In the semiconductor device so structured, the warpage of the resin package is reduced both in longitudinal and transverse directions.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will more fully be understood from the detailed description given hereinafter and accompanying drawings which are given by way of illustration only, and thus are not limitative of the present invention.

FIG. 1 is a perspective view of a semiconductor device according to the first embodiment of the present invention.

FIG. 2 is a cross sectional view taken along a line II-II of FIG. 1.

FIG. 3 is a perspective view of the radiating plate of the first embodiment.

FIG. 4 is a perspective view of the semiconductor chips and the conductive lead plate assembled on the radiating plate.

FIGS. 5A, 5B and 5C are top plan, side and elevational views of the resin package of thermoplastic resin mixed with fiber glass.

FIG. 6 is a perspective view of another conductive lead plate, which is similar to FIG. 4.

FIG. 7 is a perspective view of a semiconductor device according to the second embodiment of the present invention.

FIG. 8 is a cross sectional view of a semiconductor device according to the third embodiment, which is similar to FIG. 2.

FIG. 9 is a perspective view of the radiating plate of the third embodiment, which is similar to FIG. 3.

FIGS. 10A-10D are enlarged cross sectional views showing variations of the groove of FIG. 9.

FIG. 11 is a cross sectional view of a semiconductor device according to the fourth embodiment, which is similar to FIG. 2.

FIG. 12 is a perspective view of the radiating plate of the fourth embodiment, which is similar to FIG. 3.

FIG. 13 is a perspective view of the semiconductor device of the fifth embodiment.

FIG. 14 is a perspective view of the semiconductor device of the sixth embodiment.

FIG. 15 is a perspective view of the radiating plate of the sixth embodiment.

FIG. 16 is a perspective view of the modified radiating plate of the sixth embodiment.

FIG. 17 is an enlarged side view of the bent portion of FIG. 16.

FIG. 18 is a perspective view of the modified radiating plate of the sixth embodiment.

FIG. 19 is a perspective view of the radiating plate of the seventh embodiment.

FIG. 20 is a perspective view of the conductive lead plate of the eighth embodiment.

Claims

1. A semiconductor device, comprising: a radiating plate;a wiring patterned layer on said radiating plate via an insulating layer;at least one semiconductor chip mounted on said wiring patterned layer, said semiconductor chip having a surface electrode;a conductive lead plate electrically connected with the surface electrode of said semiconductor chip;a resin package of thermoplastic resin having anisotropic linear expansion coefficient varying based upon directions, said resin package covering said wiring patterned layer, said semiconductor chip, said conductive lead plate, and at least a portion of said radiating plate;wherein said conductive lead plate extends in a direction which provides said resin package with the maximum linear expansion coefficient.

2. The semiconductor device according to claim 1, wherein said resin package has two pairs of opposing sides extending in longitudinal and transverse directions, respectively, said resin package being formed by injecting thermoplastic resin from a resin inlet provided on one side extending in the transverse direction; andwherein said conductive lead plate extends in the transverse direction.

3. The semiconductor device according to claim 1, wherein said conductive lead plate has a linear expansion coefficient not exceeding one of said radiating plate.

4. The semiconductor device according to claim 1, wherein said resin package has a bottom surface adjacent said radiating palate and a top surface opposing to the bottom surface, and further includes a transverse rib on the top surface thereof extending in a direction parallel to the said conductive lead plate.

5. The semiconductor device according to claim 2, wherein said radiating plate includes two pairs of opposing ends extending in the longitudinal and transverse directions, respectively, and further includes a pair of longitudinal grooves formed adjacent the opposing ends extending in the longitudinal direction; andwherein the longitudinal grooves are filled up with said resin package.

6. The semiconductor device according to claim 2, wherein said radiating plate includes two pairs of opposing ends extending in the longitudinal and transverse directions, respectively, and further includes a plurality of recesses formed adjacent the opposing ends extending in the longitudinal direction; andwherein the recesses are filled up with said resin package.

7. The semiconductor device according to claim 1, wherein said resin package has a bottom surface adjacent said radiating palate and a top surface opposing to the bottom surface, and further includes a longitudinal rib on the top surface thereof extending in a direction perpendicular to the said conductive lead plate.

8. A semiconductor device, comprising: a radiating plate;a wiring patterned layer on said radiating plate via an insulating layer;at least one semiconductor chip mounted on said wiring patterned layer, said semiconductor chip having a surface electrode;a conductive lead member electrically connected with the surface electrode of said semiconductor chip;a resin package of thermoplastic resin having anisotropic linear expansion coefficient varying based upon directions, said resin package covering said wiring patterned layer, said semiconductor chip, said conductive lead member, and at least a portion of said radiating plate;wherein said radiating plate has a bent member extending in a direction which provides said resin package with the maximum linear expansion coefficient.

9. The semiconductor device according to claim 8, wherein said resin package has two pairs of opposing sides extending in longitudinal and transverse directions, respectively, said resin package being formed by injecting thermoplastic resin from a resin inlet provided on one side extending in the transverse direction;wherein said conductive lead member has a conductive lead wire extending in the transverse direction; andwherein said radiating plate has a projection member intervened between the resin inlet and the conductive lead wire.

10. The semiconductor device according to claim 8, wherein the bent member of said radiating plate has a cut-out portion.

11. The semiconductor device according to claim 8, wherein the bent member of said radiating plate has a through-hole.

12. The semiconductor device according to claim 8, wherein said conductive lead member includes both of a conductive lead wire and a conductive lead plate, the conductive lead plate having an elongated portion which covers at lest a portion of the conductive lead wire.

13. The semiconductor device according to claim 1, wherein said resin package is made of thermoplastic resin with fiber glass.

14. The semiconductor device according to claim 8, wherein said resin package is made of thermoplastic resin with fiber glass.