Claims
- 1. An optoelectronic device, comprising:
a transistor outline housing; a photo diode within the transistor outline housing; an integrated circuit, within the transistor outline housing, the integrated circuit having an input amplifier stage and an output amplifier stage, the input amplifier stage having an input node coupled to the photo diode; the input amplifier stage configured to have a series connection to a first resistor, said first resistor connected to a ground node; and the output amplifier stage configured to have a connection to the ground node, said connection not overlapping the series connection.
- 2. The optoelectronic device of claim 1, wherein the resistor is within the transistor outline housing and external to the integrated circuit.
- 3. The optoelectronic device of claim 1, further comprising a second resistor, wherein the input amplifier stage is configured to have a series connection to said second resistor, said second resistor connected to the ground node.
- 4. The optoelectronic device of claim 3, wherein
each conductive connection between the input amplifier stage and the resistor and each conductive connection between the resistor and the ground node is formed by a bond wire, wherein said bond wire has an associated inductance.
- 5. The optoelectronic device of claim 3, wherein the second resistor is within the transistor outline housing and external to the integrated circuit.
- 6. The optoelectronic device of claim 1, further comprising
a plurality of additional connections between the ground node and the output amplifier stage, each of said plurality of additional connections formed by a bond wire, wherein said bond wire is connected to both said ground node and said output amplifier stage, wherein said bond wire has an associated inductance.
- 7. The optoelectronic device of claim 1, further comprising an output node, wherein the output amplifier stage is coupled to a signal contact through said output node.
- 8. The optoelectronic device of claim 1, further comprising one or more additional output nodes, wherein
each of said one or more additional output nodes connects the output amplifier stage to one of the signal contact and a second signal contact; and at least one of said one or more additional output nodes is connected to the second signal contact.
- 9. The optoelectronic device of claim 8, wherein
each conductive connection between the output amplifier stage and the signal contact and each conductive connection between the output amplifier stage and the second signal contact is formed by a bond wire, wherein said bond wire has an associated inductance.
- 10. The optoelectronic device of claim 1, wherein
the input amplifier stage and the output amplifier stage are connected to a voltage source pad, said voltage source pad connected by one or more bond wires to voltage source within the transistor outline housing, wherein each of said one or more bond wires has an associated inductance.
- 11. An optoelectronic device, comprising:
a transistor outline housing; a photo diode within the transistor outline housing; an integrated circuit, within the transistor outline housing, the integrated circuit having an input amplifier stage and an output amplifier stage, the input amplifier stage having an input node coupled to the photo diode; the input stage configured to have a first connection to a capacitor, said capacitor connected to a ground node and a power source; and the output stage configured to have a second connection to the capacitor, whereby a defined range of high frequencies are prevented by said capacitor from flowing between the input stage and said output stage via a connection to the power source.
- 12. The optoelectronic device of claim 11, wherein the first connection includes a first bond wire and the second connection includes a second bond wire; wherein the first bond wire and second bond wire each having an associated inductance.
- 13. The optoelectronic device of claim 1, wherein
the input amplifier stage is configured to have one or more conductive connections to the ground node.
- 14. The optoelectronic device of claim 13, wherein
each of said one or more conductive connections between the input amplifier stage and the ground node is formed by a bond wire, wherein said bond wire has an associated inductance.
- 15. The optoelectronic device of claim 13, wherein
the output amplifier stage configured to have one or more conductive connections to the ground node, said one or more conductive connections not overlapping the one or more conductive connections between the input amplifier stage and said ground node, said one or more conductive connections between the output amplifier stage and the ground node formed by a bond wire, wherein said bond wire has an associated inductance.
- 16. The optoelectronic device of claim 11, further comprising an output node, wherein the output amplifier stage is coupled to a signal contact through said output node.
- 17. The optoelectronic device of claim 16, further comprising one or more additional output nodes, wherein
each of said one or more additional output nodes connects the output amplifier stage to one of the signal contact and a second signal contact; and at least one of said one or more additional output nodes is connected to the second signal contact.
- 18. The optoelectronic device of claim 17, wherein
each conductive connection between the output amplifier stage and the signal contact and each conductive connection between the output amplifier stage and the second signal contact is formed by a bond wire, wherein said bond wire has an associated inductance.
Parent Case Info
[0001] The present application claims priority, under 35 U.S.C. 119(e), to a U.S. Provisional Patent Application bearing serial No. 60/366,089, filed Mar. 19, 2002, which is incorporated herein by reference.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60366089 |
Mar 2002 |
US |