2785349

Information

• Patent Grant
• 2785349

• References
• Source

• Patent Number

  2,785,349

• Date Filed

  Not available

• Date Issued

  Tuesday, March 12, 1957
  67 years ago

• CPC

  • H01L24/01 - Means for bonding being attached to, or being formed on, the surface to be connected
  • B05B1/26 - with means for mechanically breaking-up or deflecting the jet after discharge
  • B65D81/266 - for absorbing gases
  • H01B1/02 - mainly consisting of metals or alloys
  • H01J5/28 - between conductive parts of vessel
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L23/041 - the container being a hollow construction having no base used as a mounting for the semiconductor body
  • H01L23/045 - the other leads having an insulating passage through the base
  • H01L23/26 - including materials for absorbing or reacting with moisture or other undesired substances
  • H01L23/4006 - with bolts or screws
  • H01L23/488 - consisting of soldered or bonded constructions
  • H01L24/45 - of an individual wire connector
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H01M2/361 - Filling of small-sized cells or batteries
  • H01M4/50 - of manganese
  • H01M4/661 - Metal or alloys
  • H01M6/045 - characterised by aqueous electrolyte
  • H01M6/06 - Dry cells
  • H01M6/10 - with wound or folded electrodes
  • H01J2893/0044 - Direct connection between two metal elements, in particular via material a connecting material
  • H01L2023/4031 - Packaged discrete devices
  • H01L2023/405 - heatsink to package
  • H01L2224/45124 - Aluminium (Al) as principal constituent
  • H01L2224/45139 - Silver (Ag) as principal constituent
  • H01L2224/45144 - Gold (Au) as principal constituent
  • H01L2224/45147 - Copper (Cu) as principal constituent
  • H01L2224/45155 - Nickel (Ni) as principal constituent
  • H01L2224/45184 - Tungsten (W) as principal constituent
  • H01L2224/45565 - Single coating layer
  • H01L2224/45647 - Copper (Cu) as principal constituent
  • H01L2924/00014 - the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
  • H01L2924/01004 - Beryllium [Be]
  • H01L2924/01005 - Boron [B]
  • H01L2924/01006 - Carbon [C]
  • H01L2924/01011 - Sodium [Na]
  • H01L2924/01013 - Aluminum [Al]
  • H01L2924/01014 - Silicon [Si]
  • H01L2924/01015 - Phosphorus [P]
  • H01L2924/01019 - Potassium [K]
  • H01L2924/0102 - Calcium [Ca]
  • H01L2924/01023 - Vanadium [V]
  • H01L2924/01027 - Cobalt [Co]
  • H01L2924/01028 - Nickel [Ni]
  • H01L2924/01029 - Copper [Cu]
  • H01L2924/01031 - Gallium [Ga]
  • H01L2924/01032 - Germanium [Ge]
  • H01L2924/01033 - Arsenic [As]
  • H01L2924/01037 - Rubidium [Rb]
  • H01L2924/01046 - Palladium [Pd]
  • H01L2924/01047 - Silver [Ag]
  • H01L2924/0105 - Tin [Sn]
  • H01L2924/01051 - Antimony [Sb]
  • H01L2924/01055 - Cesium [Cs]
  • H01L2924/01057 - Lanthanum [La]
  • H01L2924/01073 - Tantalum [Ta]
  • H01L2924/01074 - Tungsten [W]
  • H01L2924/01078 - Platinum [Pt]
  • H01L2924/01079 - Gold [Au]
  • H01L2924/01082 - Lead [Pb]
  • H01L2924/01327 - Intermediate phases
  • H01L2924/014 - Solder alloys
  • H01L2924/09701 - Low temperature co-fired ceramic [LTCC]
  • H01L2924/19041 - being a capacitor
  • H01L2924/19042 - being an inductor

• US Classifications

  • 257 - Active solid-state devices