Claims
- 1. A package for protecting an integrated circuit device having an active side, said package comprising:
a substrate for mounting the integrated circuit device; a plastic cap mounted on the substrate to form an enclosed space for the active side of the integrated circuit device; a thermal bond formed between the substrate and the plastic cap to effectively seal the enclosed space so as to prevent the ingress of moisture or particulates.
- 2. The package as set forth in claim 1 wherein said plastic cap comprises a liquid crystal polymer.
- 3. The package as set forth in claim 1 wherein said plastic cap comprises an absorber material to resist the passage of radiant energy through the cap.
- 4. The package as set forth in claim 3 wherein said absorber material comprises carbon black filler.
- 5. The package as set forth in claim 1 wherein said plastic cap comprises a metal layer on an outer surface of the cap to provide radio frequency shielding of the integrated circuit device.
- 6. The package as set forth in claim 1 wherein said plastic cap comprises a transparent panel for the passage of optical signals to the integrated circuit device.
- 7. The package as set forth in claim 1 wherein said plastic cap comprises a port for the selective entry of materials into the package.
- 8. The package as set forth in claim 1 wherein said plastic cap comprises cooling fins for the dissipation of heat from the package.
- 9. The package as set forth in claim 1 further comprising an adhesive coating between the plastic cap and the substrate to bond the cap to the substrate.
- 10. The package as set forth in claim 1 wherein said thermal bond is located at a junction between the plastic cap and the substrate.
- 11. The package as set forth in claim 10 wherein said plastic cap comprises a metal coating at the junction between the cap and the substrate.
- 12. The package as set forth in claim 11 wherein said metal coating is nickel plating.
- 13. A package for protecting an integrated circuit device having an active side, said package comprising:
a plastic cap mounted on the integrated circuit device to form an enclosed space for the active side of the integrated circuit device; a thermal bond formed between the integrated circuit device and the plastic cap to effectively seal the enclosed space so as to prevent the ingress of moisture or particulates.
- 14. The package as set forth in claim 13 wherein said plastic cap comprises a liquid crystal polymer.
- 15. The package as set forth in claim 13 wherein said plastic cap comprises an absorber material to resist the passage of radiant energy through the cap.
- 16. The package as set forth in claim 15 wherein said absorber material comprises carbon black filler.
- 17. The package as set forth in claim 13 wherein said plastic cap comprises a metal layer on an outer surface of the cap to provide radio frequency shielding of the integrated circuit device.
- 18. The package as set forth in claim 13 wherein said plastic cap comprises a transparent panel for the passage of optical signals to the integrated circuit device.
- 19. The package as set forth in claim 13 wherein said plastic cap comprises a port for the selective entry of materials into the package.
- 20. The package as set forth in claim 13 wherein said plastic cap comprises cooling fins for the dissipation of heat from the package.
- 21. The package as set forth in claim 13 further comprising an adhesive coating between the plastic cap and the substrate to mechanically attach the cap to the integrated circuit device.
- 22. The package as set forth in claim 13 wherein said thermal bond is located at a junction between the plastic cap and the integrated circuit device.
- 23. The package as set forth in claim 22 wherein said cap comprises a metal coating at the junction between the plastic cap and the integrated circuit device.
- 24. The package as set forth in claim 23 wherein said metal coating is nickel plating.
- 25. A package for protecting an integrated circuit device having an active side, said package comprising:
a substrate for mounting the integrated circuit device; a cap mounted on the substrate to form an enclosed space for the active side of the integrated circuit device, the cap comprising a metal layer in contact with the substrate; a thermal bond formed between the substrate and the cap to effectively seal the enclosed space so as to prevent the ingress of moisture or particulates.
- 26. The package as set forth in claim 25 wherein said cap comprises plastic.
- 27. The package as set forth in claim 25 wherein said cap comprises ceramic.
- 28. The package as set forth in claim 25 wherein said cap comprises glass.
- 29. The package as set forth in claim 25 wherein said metal layer comprises nickel.
- 30. The package as set forth in claim 25 wherein said metal layer comprises copper.
- 31. A package for protecting an integrated circuit device having an active side, said package comprising:
a cap mounted on the integrated circuit device to form an enclosed space for the active side of the integrated circuit device, the cap comprising a metal layer in contact with the substrate; a thermal bond formed between the integrated circuit device and the cap to effectively seal the enclosed space so as to prevent the ingress of moisture or particulates.
- 32. The package as set forth in claim 31 wherein said cap comprises plastic.
- 33. The package as set forth in claim 31 wherein said cap comprises ceramic.
- 34. The package as set forth in claim 31 wherein said cap comprises glass.
- 35. The package as set forth in claim 31 wherein said metal layer comprises nickel.
- 36. The package as set forth in claim 31 wherein said metal layer comprises copper.
- 37. A process for forming a package for protecting an integrated circuit device mounted on a substrate comprising the steps of:
placing a cap in contact with the substrate such that said cap and said substrate form a junction and define an enclosed space for the integrated circuit device; and applying thermal energy to the junction to form a bond between the cap and the substrate, said bond providing a near-hermetic seal for the enclosed space.
- 38. The process as set forth in claim 37 wherein said steps of applying thermal energy comprises using a laser to pass a beam of energy through the substrate to heat the junction.
- 39. The process as set forth in claim 38 wherein said beam of energy has a wavelength of approximately 800 nanometers to approximately 825 nanometers.
- 40. The process as set forth in claim 37 wherein said cap comprises a metal coating in contact with the substrate to form said junction, said step of applying thermal energy comprises using a laser to pass a beam of energy through the cap to heat the junction.
- 41. A process for forming a package for protecting an integrated circuit device comprising the steps of:
placing a cap in contact with the integrated circuit device such that said cap and said integrated circuit device form a junction and define an enclosed space for the integrated circuit device; and applying thermal energy to the junction to form a bond between the cap and the integrated circuit device, said bond providing a near-hermetic seal for the enclosed space.
- 42. The process as set forth in claim 41 wherein said step of passing thermal energy comprises using a laser to pass a beam of energy through the integrated circuit device to heat the junction.
- 43. The process as set forth in claim 42 wherein said beam of energy has a wavelength of approximately 800 nanometers to approximately 825 nanometers.
- 44. The process as set forth in claim 41 wherein said cap comprises a metal coating in contact with the integrated circuit device to form said junction, said step of applying thermal energy comprises using a laser to pass a beam of energy through the cap to heat the junction.
- 45. A process for forming an integrated circuit device package, the process comprising the steps of:
fabricating an integrated circuit device wafer having an active side; fabricating a grid of fusible material and placing the material on the integrated circuit device wafer; fabricating a cap wafer and aligning said wafer for contact with the grid of fusible material; placing said cap wafer in contact with said grid of fusible material; passing thermal energy through the integrated circuit device wafer to heat the grid of fusible material and form a bond between the cap wafer and the integrated circuit device wafer; and dicing the integrated circuit device wafer and cap wafer to form one or more individual integrated circuit device packages each having a near hermetically sealed enclosed space.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is a non-provisional of U.S. Provisional Patent Application Serial No. 60/413,109, filed Sep. 24, 2002. The entire text of which is hereby incorporated herein by reference.
Provisional Applications (1)
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Number |
Date |
Country |
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60413109 |
Sep 2002 |
US |