Claims
- 1. A method for forming an insulation layer over a substrate disposed in a substrate processing chamber, the method comprising:
(a) flowing a process gas into the substrate processing chamber; (b) heating the substrate to form layer over the substrate with said process gas; (c) densifying said layer; and (d) thereafter, curing the layer.
- 2. The method of claim 1 wherein said densfiying includes heating the substrate in a reducing atmosphere.
- 3. The method of claim 2 wherein said reducing atmosphere comprises ammonia (NH3) or hydrogen (H2).
- 4. The method of claim 2 wherein said reducing atmosphere comprises ammonia (NH3) at a pressure of between 200 and 700 torr during said densification.
- 5. The method of claim 4 wherein the substrate is heated to a temperature of between 300 and 500° C. during said densification.
- 6. The method of claim 5 wherein the substrate is heated for between 1 and 5 minutes during said densification.
- 7. The method of any of the above claims, wherein the curing is done in a furnace.
- 8. The method of claim 7 wherein said curing heats the substrate to a temperature between 300 and 500° C. for at least 15 minutes.
- 9. The method of any of the above claims, wherein said process gas includes an organosilane having at least one silicon-carbon bond.
- 10. The method of claim 9 wherein the organosilane precursor is selected from the group consisting of methylsilane, dimethylsilane, trimethylsilane, tetramethylsilane and phenylmethylsilane.
- 11. The method of claim 1 wherein said process gas further comprises ozone.
- 12. The method of claim 1 wherein said substrate is heated to a temperature of less than about 250° C.
- 13. A substrate processing system comprising:
a housing defining a process chamber; a substrate holder, adapted to hold a substrate during substrate processing; a heater, operatively coupled to heat said substrate holder; a gas delivery system configured to introduce gases into said process chamber; a controller for controlling said gas delivery system and said heater; and a memory coupled to said controller comprising a computer-readable medium having a computer-readable program embodied therein for directing operation of said controller, said computer-readable program including
a first set of instructions to control said gas delivery system to flow a process gas into the substrate processing chamber; a second set of instructions to control said heater to heat the substrate holder to form a carbon-doped silicon oxide layer over the substrate with said process gas; and a third set of instructions to control said substrate processing system to densify said carbon-doped silicon oxide layer.
- 14. A computer readable storage medium having a computer-readable program embodied therein for directing operation of a substrate processing system including a process chamber; a substrate holder; a heater, operatively coupled to heat said substrate holder; a gas delivery system configured to introduce gases into said process chamber, said computer-readable program including instructions for operating said substrate processing system to form an insulation layer over a substrate disposed in the processing chamber in accordance with the following:
flowing a process gas into the substrate processing chamber; heating the substrate to form a carbon-doped silicon oxide layer over the substrate with said process gas; and densifying said carbon-doped silicon oxide layer.
Priority Claims (1)
Number |
Date |
Country |
Kind |
99402074.1 |
Aug 1999 |
EP |
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CROSS-REFERENCES TO RELATED APPLICATIONS
[0001] This application is a division of U.S. application Ser. No. 09/632,669, filed Aug. 7, 2000, entitled “Post-Deposition Treatment to Enhance Properties of Si—O—C Low k Films,” having Li-Qun Xia, Frederic Gaillard, Ellie Yieh, Tian H. Lim listed as coinventors.
[0002] This application is related to U.S. application Ser. No. 09/625,911, filed Aug. 7, 2000, entitled “THERMAL CVD PROCESS FOR DEPOSITING A LOW DIELECTRIC CONSTANT CARBON-DOPED SILICON OXIDE FILM,” having Li-Qun Xia, Fabrice Geiger, Frederic Gaillard, Ellie Yieh and Tian Lim as coinventors; and to U.S. application Ser. No. 09/633,495, filed Aug. 7, 2000, entitled “SURFACE TREATMENT OF C-DOPED SIO2 FILM TO ENHANCE FILM STABILITY DURING O2 ASHING,” having Li-Qun Xia, Frederic Gaillard, Ellie Yieh and Tian H. Lim as coinventors; and to U.S. application Ser. No. 09/633,196, filed Aug. 7, 2000, entitled “METHOD AND APPARATUS TO ENHANCE PROPERTIES OF Si—O—C LOW K FILMS,” having Li-Qun Xia, Frederic Gaillard, Ellie Yieh and Tian H. Lim as coinventors; and to U.S. application Ser. No. 09/633,798, filed Aug. 7, 2000, entitled “LID COOLING MECHANISM FOR OPTIMIZED DEPOSITION OF LOW-K DIELECTRIC USING TRI METHYLSILANE-OZONE BASED PROCESSES,” having Himansu Pokharna, Li-Qun Xia and Tian-Hoe Lim as coinventors. Each of the 09/625,911, 09/633,495, 09/633,196 and 09/633,798 applications listed above are assigned to Applied Materials, Inc., the assignee of the present invention and are hereby incorporated by reference.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09632669 |
Aug 2000 |
US |
Child |
10293096 |
Nov 2002 |
US |