RF MODULE AND MANUFACTURING THE SAME

Abstract

A technology is provided so that RF modules used for cellular phones etc. can be reduced in size. Over a wiring board constituting an RF module, there are provided a first semiconductor chip in which an amplifier circuit is formed and a second semiconductor chip in which a control circuit for controlling the amplifier circuit is formed. A bonding pad over the second semiconductor chip is connected with a bonding pad over the first semiconductor chip directly by a wire without using a relay pad. In this regard, the bonding pad formed over the first semiconductor chip is not square but rectangular (oblong).

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a signal transmitter/receiver of a digital cellular phone;

FIG. 2 is a circuit block diagram of a high-frequency amplifier circuit of an RF module;

FIG. 3 is a circuit diagram showing part of the amplifier circuit;

FIG. 4 is a plan view showing a layout of an RF module in Embodiment 1 of the present invention;

FIG. 5 shows the A-A section of the RF module of FIG. 4;

FIG. 6 shows a section of an RF module studied by the present inventors;

FIG. 7 is a plan view showing a structure of a semiconductor chip in which an amplifier circuit is formed in Embodiment 1;

FIG. 8 is a plan view showing HBTs to be used for the amplifier circuit;

FIG. 9 is the A-A section of the portion shown in FIG. 8;

FIG. 10 is a sectional view showing a manufacturing process of the semiconductor device in Embodiment 1;

FIG. 11 is a sectional view showing a manufacturing process of the semiconductor device after the process in FIG. 10;

FIG. 12 is a sectional view showing a manufacturing process of the semiconductor device after the process in FIG. 11;

FIG. 13 is a view wherein a bonding pad to which wire bonding is applied in Embodiment 1 is seen from the above;

FIG. 14 is a view wherein a bonding pad to which wire bonding is applied according to the technology studied by the present inventors is seen from the above;

FIG. 15 shows a section of the bonding pad;

FIG. 16 is a section showing a structure of an LDMOSFET in Embodiment 2;

FIG. 17 is a section showing an RF module in Embodiment 3; and

FIG. 18 is a plan view showing an RF module in Embodiment 4.

Claims

1. A semiconductor device comprising: (a) a first semiconductor chip in which an amplifier circuit for amplifying an inputted signal and generating an output signal is formed;(b) a second semiconductor chip in which a control circuit for controlling said amplifier circuit is formed; and(c) a wiring board over which said first semiconductor chip and said second semiconductor chip are arranged adjacent to each other,wherein said first semiconductor chip is electrically connected with said second semiconductor chip by a wire, and said wire is directly connecting said first semiconductor chip with said second semiconductor chip without the aid of a relay pad.

2. A semiconductor device according to claim 1, wherein, of two or more pads formed over said first semiconductor chip, control pads to be connected to said second semiconductor chip are arranged along one side of said first semiconductor chip.

3. A semiconductor device according to claim 2, wherein, of the two or more pads formed over said first semiconductor chip, an input pad for inputting said input signal is formed on a side intersecting with the side on which said control pads are formed.

4. A semiconductor device according to claim 2, wherein, of the two or more pads formed over said first semiconductor chip, an output pad for outputting said output signal is formed on a side opposing the side on which said control pads are formed.

5. A semiconductor device according to claim 1, wherein said amplifier circuit formed in said first semiconductor chip includes a heterojunction bipolar transistor.

6. A semiconductor device according to claim 3, wherein said amplifier circuit comprises: a first amplifier section for amplifying said input signal;a second amplifier section for amplifying the signal amplified by said first amplifier section; anda third amplifier section for amplifying the signal amplified by said second amplifier section and generating said output signal.

7. A semiconductor device according to claim 6, wherein said third amplifier section is arranged closer to a central part of said first semiconductor chip than said first and second amplifier sections, and said first and second amplifier sections are arranged closer to said input pad than said third amplifier section.

8. A semiconductor device according to claim 6, wherein said first semiconductor chip comprises: said input pad;a first-stage output pad for amplifying and outputting said input signal inputted by said input pad in said first amplifier section;a middle-stage input pad for inputting the signal outputted from said first-stage output pad to said second amplifier section;a middle-stage output pad for amplifying and outputting the signal inputted from said middle-stage input pad in said second amplifier section;a final-stage input pad for inputting the signal outputted from said middle-stage output pad to said third amplifier section; andan output pad for amplifying the signal inputted from said final-stage input pad in said third amplifier section and outputting said output signal, andwherein said input pad, said first-stage output pad, said middle-stage input pad, said middle-stage output pad, and said final-stage input pad are arranged in this order on a side intersecting with a side on which said control pad is formed.

9. A semiconductor device according to claim 8, wherein said output pad is arranged on a side opposing the side on which said control pad is formed.

10. A semiconductor device according to claim 2, wherein said control pad is rectangular.

11. A semiconductor device according to claim 1, wherein said amplifier circuit amplifies two or more input signals of different frequency bands, respectively.

12. A semiconductor device comprising: (a) a first semiconductor chip having two or more first pads;(b) a second semiconductor chip having two or more second pads;(c) a wiring board on which said first semiconductor chip and said second semiconductor chip are mounted; and(d) two or more wires directly connecting said first pads with said second pads,wherein either said two or more first pads or said two or more second pads are rectangular.

13. A semiconductor device according to claim 12, wherein there is provided, over said first semiconductor chip, an amplifier circuit for amplifying an input signal and generating an output signal and there is provided, over said second semiconductor chip, a control circuit for controlling said amplifier circuit.

14. A semiconductor device according to claim 12, wherein said first semiconductor chip mainly comprises a compound semiconductor and said second semiconductor is mainly made of silicon.

15. A semiconductor device according to claim 13, wherein said first semiconductor chip is rectangular.

16. A semiconductor device according to claim 15, wherein said first semiconductor chip is thinner than said second semiconductor chip.

17. A method of manufacturing a semiconductor device, comprising the steps of: (a) arranging, adjacent to each other, a first semiconductor chip in which an amplifier circuit amplifying an input signal and generating an output signal is formed and a second semiconductor chip in which a control circuit for controlling said amplifier circuit is formed; and(b) directly connecting two or more first pads formed over said first semiconductor chip with two or more second pads formed over said second semiconductor chip by wires,wherein connection by said wires is made from said two or more second pads to said two or more first pads in step (b)

18. A method of manufacturing a semiconductor device according to claim 17, wherein said two or more first pads are rectangular.

19. A method of manufacturing a semiconductor device according to claim 17, wherein said first semiconductor chip mainly comprises a compound semiconductor and said second semiconductor chip is mainly made of silicon.

20. A method of manufacturing a semiconductor device according to claim 17, wherein said first semiconductor chip is thinner than said second semiconductor chip.