Patent Application
20130037966
The present invention is directed to a method of semiconductor die packaging and, more particularly, to a method of controlling the fillet height of a material used to attach the semiconductor die to a die support member.
Semiconductor device packaging fulfils basic functions such as providing external electrical connections to/from a semiconductor die and protecting the die against mechanical and environmental stresses. In a common method of packaging dies, a wafer is singulated and the singulated dies are bonded on a die support, such as a substrate or a die pad or flag of a lead frame. During the die bonding process, viscous bonding material placed between the die and the support solidifies. Typical bonding materials are polymer adhesives such as epoxy resin, soft solder or eutectic alloy.
During the die bonding operation, the bonding material may flow up the edge of the die, forming a fillet. The height of the fillet is a production variable that it is important to control. In order to increase packaging density, the thickness of the semiconductor dies is minimized. For example, the backside of the wafer may be ground to reduce the thickness of the wafer before singulation of the semiconductor dies. However, reducing die thickness increases the risk of excessive fillet height; that is, the state in which the die bonding material overflows the edge of the die and onto the active face of the die, which in turn can cause wire bonding defects such as short circuits of the contact pads on the die. Thus, it would be advantageous to be able to accurately control the fillet height and thus prevent die bonding material from flowing onto the active face of the die.
The present invention is illustrated by way of example and is not limited by embodiments thereof shown in the accompanying figures, in which like references indicate similar elements. Elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale.
Semiconductor device packages for surface mounting have exposed electrical contacts. The exposed electrical contacts are connected internally with electrical contact pads on an active face of the semiconductor die. Various techniques are available for connecting the exposed electrical contacts of the package with the embedded semiconductor die. The semiconductor devices shown in the drawings are wire bonded packages, in which the semiconductor die is mounted on the die support with its active face opposite from the die support. Wires are then bonded to the contact pads of the semiconductor die and to the exposed electrical contacts of the package to provide the internal connections. However, the examples of bonding dies on a die support shown and described are also applicable to other semiconductor device package configurations.
During the bonding of the semiconductor die 40 to the die support 51, the die attach material 52 is viscous. When the second face 44 of the semiconductor die 40 is applied to the die attach material 52, the die attach material 52 is caused to flow out beyond the edge surface 46 of the die 40 to ensure full coverage of the second face 44 and reduce risk of the semiconductor die 40 tilting. Surface tension then causes the die attach material 52 to flow up the edge surface 46, forming a fillet 50. If the fillet 50 has an excessive height that would be indicative of the die attach material 52 flowing over the die edge 46 and onto the active face 42, with the attendant risk of causing defects such as short circuits of the contact pads on the die 40. If the edge surface 46 were planar, so that in cross-section the semiconductor die 40 was rectangular, the die attach material 52 would flow straight up the edge surface 46 of the die. To reduce the risk of overflow of the die attach material 52 onto the active face 42, the known semiconductor device 100 has a step 48 formed in the die edge surface 46. The step 48 is formed in the first face 42 of the semiconductor die 40. The distance that the die attach material 52 can flow over the step 48 before overflowing onto the active face 42 is greater than in the case of a straight edge surface 46. However, the step reduces the width of the active face 42 such that it is less than the width of the opposing face 44, which has the disadvantages of either reducing the number of dies per wafer and/or reducing the number of electrical contact elements that can be located on the active face 42. Further, when the die attach material 52 flows over the step 48 surface tension will still cause the die attach material 52 to flow up towards the active face 42, leaving some risk of the die attach material 52 overflowing onto the active face 42.
The second face 206 of the semiconductor die 202 is bonded to the bonding surface 212 of the die support member 210 with a die attach material wherein a fillet 216 of the die attach material is formed within the area defined by the undercut 214.
During the process of bonding the second face 206 of the semiconductor die 202 to the bonding surface 212, the undercut 214 contains the die attach material such that the fillet 216 does not extend over the die outer edge 208 and onto the die first face 204. Even if the size of the fillet 216 is excessive, the die attach material will tend to flow outwards, attracted by surface tension with the bonding surface 212, which is generally parallel to the overhang of the undercut 214, rather than flowing up the perpendicular edge surface 208 towards the first face 204, reducing risk of the die attach material overflowing onto the first face 204 and causing a defect.
The first face 204 is an active face of the semiconductor die 202 and has a width greater than the second face 206, which can allow for an increase in the number of dies 202 per wafer and/or an increase in the number of electrical contact elements on the first, active face 204 of the die 202, as compared to the semiconductor device 100.
The semiconductor device 200 includes a set of exposed electrical contact elements 218, which may be formed from part of a lead frame which also provides the die support 210. The active face 204 of the semiconductor die 202 has a plurality of electrical contact elements 220 that are electrically connected with the exposed electrical contact elements 218 such as with bond wires 222, which may be done using known wire bonding processes and equipment. A molding compound 224 covers the first face 204, fillet 216 and bond wires 222.
It will be appreciated that a semiconductor device such as the device 200 may include more than one semiconductor die 202 each of whose edge surfaces 208 includes an undercut 214.
The vertical dimensions in the drawings have been exaggerated relative to the horizontal dimensions for the sake of clarity. By way of example, in one example of a semiconductor die 202, the thickness of the die 202 was reduced to 125 μm by back-grinding the wafer before singulating the dies. The undercut 214 was 50 μm wide and 75 μm high.
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The first saw blade 500 is displaced along a set of parallel saw streets and an orthogonal set of parallel saw streets between adjacent semiconductor dies 202 to form the grooves 504. The displacement of the first saw blade 500 is guided by the alignment marks on the first face 204 of the wafer 300 sensed by the camera 502. A width S1 of the grooves 504 is defined by the width of the first saw blade 500. Each groove 504 will form the undercuts 214 of adjacent semiconductor dies 202. The width S1 of the groove 504 is greater than the widths of the two adjacent undercuts 214, to allow for subsequent singulation of the semiconductor dies 202.
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In this example, the die attach adhesive is applied to the bonding surface 212 of the die support 210. The second face 206 of the semiconductor die 202 is then applied to the die attach material, which flows into the undercut 214 formed by the groove 504 and the fillet 216 is formed. In an example of another embodiment of the invention, the die attach material is applied to the second face 206 of the semiconductor die 202 and the die 202 then is applied to the bonding surface 212 of the die support 210, and once again a fillet 216 is formed in the undercut 214.
After attaching the semiconductor die 202 to the bonding surface 212 of the die support 210, the electrical contact elements 220 of the dies 202 are electrically connected with corresponding ones of the exposed electrical contact elements 218, such as with a known wire bonding process using commercially available wire bonding equipment. After wire bonding, encapsulation is performed with the die 202, bond wires 222, and the fillet 216 being covered with a molding compound 224.
It is convenient to perform the singulation of the wafer 300 on the same machine as cutting the grooves 504. In this example of the method, two blades of different widths are used simultaneously, cutting in different saw streets, with different saw blade heights. It would be possible alternatively to change the broader saw blade for a narrower saw blade and adjust the saw blade height. However, in another example of another embodiment of the invention, the wafer 300 is mounted on the backing 700 after cutting the grooves 504. The singulation of the wafer 300 is then performed subsequently by sawing, scribing or laser cutting.
In the foregoing specification, the invention has been described with reference to specific examples of embodiments of the invention. It will, however, be evident that various modifications and changes may be made therein without departing from the broader spirit and scope of the invention as set forth in the appended claims. For example, the semiconductor die 202 described herein can be any semiconductor material or combinations of materials, such as gallium arsenide, silicon germanium, silicon-on-insulator (SOI), silicon, monocrystalline silicon, the like, and combinations of the above.
The terms “front,” “back,” “top,” “bottom,” “over,” “under” and the like in the description and in the claims, if any, are used for descriptive purposes and not necessarily for describing permanent relative positions. It is understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the invention described herein are, for example, capable of operation in other orientations than those illustrated or otherwise described herein.
Further, those skilled in the art will recognize that boundaries between the above described operations merely illustrative. The multiple operations may be combined into a single operation, a single operation may be distributed in additional operations and operations may be executed at least partially overlapping in time. Moreover, alternative embodiments may include multiple instances of a particular operation, and the order of operations may be altered in various other embodiments. However, other modifications, variations and alternatives are also possible. The specifications and drawings are, accordingly, to be regarded in an illustrative rather than in a restrictive sense.
In the claims, the word ‘comprising’ does not exclude the presence of other elements or steps then those listed in a claim. Furthermore, the terms “a” or “an,” as used herein, are defined as one or more than one. Also, the use of introductory phrases such as “at least one” and “one or more” in the claims should not be construed to imply that the introduction of another claim element by the indefinite articles “a” or “an” limits any particular claim containing such introduced claim element to inventions containing only one such element, even when the same claim includes the introductory phrases “one or more” or “at least one” and indefinite articles such as “a” or “an.” The same holds true for the use of definite articles. Unless stated otherwise, terms such as “first” and “second” are used to arbitrarily distinguish between the elements such terms describe. Thus, these terms are not necessarily intended to indicate temporal or other prioritization of such elements. The fact that certain measures are recited in mutually different claims does not indicate that a combination of these measures cannot be used to advantage.
| Number | Date | Country | Kind |
|---|---|---|---|
| 201110227755.1 | Aug 2011 | CN | national |
