Claims
- 1. A wiring board comprising:
an insulation layer formed on the wiring board; and a wiring comprising a Cu layer and a Cr or Ti layer which is arranged between the Cu layer and the insulation layer under the Cu layer in order to closely connect the Cu layer with the insulation layer, wherein a solder for an outer connection is provided on the Cu layer and brought to diffuse into the Cu layer to produce an alloy, and brought to reach the Cr or Ti layer thereby connecting the solder to the Cr or Ti layer.
- 2. A wiring board according to claim 1, wherein the solder is a Sn-containing solder.
- 3. A wiring board according to claim 1, wherein the Cu layer has a thickness of from about 0.1 μm to about 10 μm.
- 4. A wiring board according to claim 1, wherein the insulation layer comprises an organic resin layer.
- 5. A wiring board according to claim 1, wherein the solder is directly connected to the wiring layer being connected to an electrode mounted on the board.
- 6. A wiring board according to claim 1, wherein there is provided an Au or Ni/Au layer or a rustproof layer as preflux between the Cu layer and the solder in order to improve wettability of the solder.
- 7. An electronic apparatus in which solder in the board according to claim 1 is connected to an electronic component.
- 8. A wiring board comprising:
a board having disposed thereon an electrode and an insulation layer disposed atop the electrode, the insulation layer having a first opening to expose the electrode; a wiring comprising a Cr or Ti layer and a Cu layer in contact with the Cr or Ti layer, the Cr or Ti layer in contact with the electrode and with the insulation layer; a protective film which covers the wiring and is provided with a second opening; and a solder for the outer connection disposed in the second opening and brought to diffuse into the Cu layer to produce an alloy, and brought to reach the Cr or Ti layer thereby connecting the solder to the Cr or Ti layer.
- 9. A wiring board according to claim 8, wherein the solder is a Sn-containing solder.
- 10. A wiring board according to claim 8, wherein the Cu layer has a thickness of from about 0.1 μm to about 10 μm.
- 11. A wiring board according to claim 8, wherein a Cr layer is provided between the Cu layer and the protective film.
- 12. A wiring board according to claim 8, wherein the insulation layer comprises an organic resin layer.
- 13. A wiring board according to claim 8, wherein there is provided an Au or Ni/Au layer or a rustproof layer as preflux between the Cu layer and the solder in order to improve wettability of the solder.
- 14. An electronic apparatus in which the solder in the board according to claim 8 is connected to an electronic component.
- 15. A method of producing a wiring board, which comprises the following steps:
a step of forming an insulation layer on a wiring board; a step of forming a wiring, in which a Cr or Ti layer and a Cu layer are laminated on the insulation layer; and a reflow bonding step, in which a solder for an outer connection is provided on the Cu layer and brought to diffuse into the Cu layer to produce an alloy, and brought to reaches the Cr or Ti layer thereby connecting the solder to the Cr or Ti layer.
- 16. A method of producing a wiring board, which comprises the following steps:
a step of forming an insulation film, which comprises coating a wiring board having an electrode by the insulation film and forming an opening in the insulation film in order to expose the electrode; a step of forming a wiring, in which a Cr or Ti layer is connected to the electrode and in physical contact with the insulation film, and in which a Cu layer is disposed on the Cr or Ti layer; a step of forming a protective film, which comprises coating the wiring with the protective film and forming an opening in the protective film for soldering; and a reflow bonding step, in which a solder for the outer connection is provided within the opening of the protective film and caused to diffuse into the Cu layer in the wiring to produce an alloy and to reach the Cr or Ti layer thereby connecting the solder to the Cr or Ti layer.
- 17. A semiconductor device comprising:
a semiconductor board having an electrode and being coated with an insulation layer being formed with an opening in order to expose the electrode; a wiring comprising a Cr or Ti layer which is in close contact with the insulation layer and of a Cu layer which is closely laminated on the Cr or Ti layer; a protective film covering the wiring and being formed with an opening for soldering; and a solder for an outer connection which is provided within the opening of the protective film and brought to diffuse into the Cu layer in the wiring to produce an alloy and brought to reach the Cr or Ti layer thereby connecting the solder to the Cr or Ti layer.
- 18. A semiconductor device according to claim 17, wherein a Cr layer is provided between the Cu layer and the protective film.
- 19. A semiconductor device according to claim 17, wherein the insulation layer comprises an organic resin layer.
- 20. A semiconductor device package structure in which the solder for an outer connection in the semiconductor device according to claim 17 is connected to an electronic component.
- 21. A semiconductor device comprising:
a first wiring board; a second wiring board; and an amount of solder disposed between the first wiring board and the second wiring board, wherein each of the wiring boards comprises:
a substrate; an insulation layer disposed on the substrate; and a wiring comprising a first layer of Cr or Ti, a second layer of Cu, and a third layer of Cr or Ti, wherein the first layer is disposed adjacent the insulation layer and the second layer is disposed between the first layer and the third layer, wherein the solder is in contact with a portion of the wiring on the first wiring board such that that the solder is diffused into its second layer and through it to form an electrical contact with its first layer, wherein the second wiring board includes an opening formed through the its substrate and through its insulation layer, wherein the solder is disposed in the opening of the substrate and the insulation layer of the second wiring board, the solder contacting a portion of the wiring of the second wiring board such that the solder is diffused into its second layer and through it to form an electrical contact with its third layer.
- 22. The semiconductor device of claim 21 wherein in the wiring of the first wiring board, an opening is formed through its third layer at a location where the solder contacts its second layer.
- 23. The semiconductor device of claim 22 wherein in the wiring of the second wiring board, an opening is formed through its first layer at a location where the solder contacts its second layer.
- 24. The semiconductor device of claim 21 wherein the first wiring board further comprises a protective film disposed to envelope its wiring, the protective film having an opening through which the solder is disposed in order to contact the wiring of the first wiring board.
- 25. The package of claim 24 wherein the second wiring board further comprises a protective film disposed to envelope its wiring.
- 26. The package of claim 21, wherein the solder is a Sn-containing solder.
- 27. The package of claim 21, wherein the Cu layer has a thickness of from about 0.1 μm to about 10 μm.
- 28. The package of claim 21 further comprising:
a third wiring board; and a second amount of solder, wherein the third wiring board comprises:
a substrate; an insulation layer disposed on the substrate; and a wiring comprising a first layer of Cr or Ti, a second layer of Cu, and a third layer of Cr or Ti, wherein the first layer is disposed adjacent the insulation layer and the second layer is disposed between the first layer and the third layer, wherein the solder is in contact with a second portion of the wiring of the second wiring board such that that the solder is diffused into its second layer and through it to form an electrical contact with its first layer, wherein the third wiring board includes an opening formed through the its substrate and through its insulation layer, wherein the solder is disposed in the opening of the substrate and the insulation layer of the third wiring board, the solder contacting a portion of the wiring of the third wiring board such that the solder is diffused into its second layer and through it to form an electrical contact with its third layer.
- 29. The semiconductor device of claim 28 wherein in the wiring of the second wiring board, an opening is formed through its third layer at a location of its second portion.
- 30. The semiconductor device of claim 29 wherein in the wiring of the third wiring board, an opening is formed through its first layer at a location where the solder contacts its second layer.
Priority Claims (1)
Number |
Date |
Country |
Kind |
11-049450 |
Feb 1999 |
JP |
|
CROSS-REFERENCES TO RELATED APPLICATIONS
[0001] The present application is a continuation of U.S. application Ser. No. 10/302,034, filed Nov. 21, 2002, which is a continuation of U.S. application Ser. No. 09/913,975, filed Aug. 20, 2001 (now U.S. Pat. No. 6,515,372), which in turn is related to and claims priority from Japanese Application No. HEI 11-049450, filed Feb. 26, 1999, all of which are incorporated herein for all purposes.
Continuations (2)
|
Number |
Date |
Country |
Parent |
10302034 |
Nov 2002 |
US |
Child |
10833790 |
Apr 2004 |
US |
Parent |
09913975 |
Aug 2001 |
US |
Child |
10302034 |
Nov 2002 |
US |