Claims
- 1. A compound semiconductor magnetoelectric transducer comprising:
- a substrate and an organic insulating layer overlaying said substrate;
- a group III-V compound semiconductor layer of 0.1 to 10.mu.m thickness disposed on said substrate and having a predetermined pattern to provide a magnetic field sensing portion;
- a plurality of electrodes each formed of a laminated stack of three metal layers;
- the first metal layer of said laminated stack being continuous to and in ohmic contact with said semiconductor layer and made of a material selected from the group consisting of Cu, Au, Au alloys and Au-Ge alloys;
- the intermediate layer of said laminated stack providing a mechanical strength above a predetermined value and being formed on said first metal layer and made of a material selected from the group consisting of Ni, Cu and their alloys;
- the third layer of said laminated stack being provided for wire bonding and being formed on said intermediate layer and made of Au; and
- said first metal layer, said intermediate metal layer and said third layer each having a thickness of between about 2-5 .mu.m.
- 2. The compound semiconductor magnetoelectric transducer as set forth in claim 1 wherein said mechanical strength providing metal layer and said bonding surface providing metal layer comprise a single metal layer, disposed immediately below and adjacent to said wire bonding electrode, in ohmic contact with said compound semiconductor layer, said single metal layer having a thickness sufficient to resist at least an ultrasonic bonding force.
- 3. The compound semiconductor magnetoelectric transducer as set forth in claim 1 including an inorganic thin insulating layer disposed between said compound semiconductor layer and said organic insulating layer.
- 4. The compound semiconductor magnetoelectric transducer as set forth in claim 1 including first and second inorganic thin insulating layers disposed adjacent to the upper and lower surfaces of said compound semiconductor layer to sandwich said compound semiconductor layer therebetween.
- 5. The compound semiconductor magnetoelectric transducer as set forth in claim 1 wherein said compound semiconductor layer is formed of a group III-V compound semiconductor of high electron mobility containing arsenic.
- 6. The compound semiconductor magnetoelectric transducer as set forth in claim 1 wherein said compound semiconductor layer contains at least one of InSb, InAs and InAsP.
- 7. The compound semiconductor magnetoelectric transducer as set forth in claim 4 wherein said inorganic insulating layer has a thickness of 500 .ANG. to 2 .mu.m.
- 8. The compound semiconductor magnetoelectric transducer as set forth in claim 1 wherein said substrate is formed of ferrite or ceramics.
Priority Claims (3)
Number |
Date |
Country |
Kind |
60-99395 |
May 1985 |
JPX |
|
60-99396 |
May 1985 |
JPX |
|
60-110155 |
May 1985 |
JPX |
|
Parent Case Info
This application is a continuation, of application Ser. No. 06/948,053, filed Dec. 31, 1986.
US Referenced Citations (4)
Number |
Name |
Date |
Kind |
4000842 |
Burns |
Jan 1977 |
|
4081601 |
Dinella et al. |
Mar 1978 |
|
4296424 |
Shibasaki et al. |
Oct 1981 |
|
4609936 |
Scharr et al. |
Sep 1986 |
|
Foreign Referenced Citations (1)
Number |
Date |
Country |
50126389 |
Oct 1979 |
JPX |
Non-Patent Literature Citations (2)
Entry |
Ohshta, M., "Hall Generators made of InSb-Sn Films", Electrical Engineering in Japan, vol. 93, No. 3, 1973, pp. 112-116. |
Sze, S. M., Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981, p. 307. |
Continuations (1)
|
Number |
Date |
Country |
Parent |
948053 |
Dec 1986 |
|