Claims
- 1. A semiconductor package, comprising:
a die containing a bond pad; a leadframe containing a plurality of leads; a plurality of bump structures between the die and the leadframe, the bump structures contain a metal stud with substantially no Pb; and a molding material encapsulating the plurality of bump structures and the side of the die containing the bond pad.
- 2. The package of claim 1, wherein the plurality of bump structures couples the die to the leadframe.
- 3. The package of claim 1, wherein the bump structures also contain a solder paste.
- 4. The package of claim 3, wherein the solder paste is located on a solderable area of the leadframe.
- 5. The package of claim 4, wherein the solderable area comprises a pad comprising a non-oxidizable metal.
- 6. The package of claim 5, wherein the non-oxidizable metal is a noble metal.
- 7. The package of claim 4, wherein the leadframe also contains a solder dam surrounding the solderable area.
- 8. The package of claim 7, wherein the solder dam comprises a metal oxide material.
- 9. The package of claim 8, wherein the metal of the metal oxide material is the same as or different from a metal used in the leadframe.
- 10. The package of claim 7, wherein the solder dam comprises a polymeric material.
- 11. The package of claim 1, wherein the molding material also encapsulates the region of the leadframe connected to the bump structures.
- 12. The package of claim 11, wherein an exterior surface of the molding material is substantially co-planar with the side of the die opposite the bond pad.
- 13. The package of claim 1, wherein the amount of Pb in the metal stud is less than about 1 ppm.
- 14. A semiconductor package, comprising:
a die containing a bond pad; a leadframe containing a plurality of leads; a plurality of bump structures between the die and the leadframe, the bump structures containing a metal stud with less than about 1 ppm Pb; and a molding material encapsulating the plurality of bump structures and the side of the die containing the bond pad.
- 15. The package of claim 14, wherein the metal stud of the bump structures is located on a solderable area of the leadframe.
- 16. The package of claim 14, wherein the solderable area comprises a pad containing a noble metal.
- 17. The package of claim 16, wherein the leadframe also contains a solder dam surrounding the solderable area, the solder dam comprising a metal oxide or polymeric material.
- 18. A system containing a semiconductor package, the package comprising:
a die containing a bond pad; a leadframe containing a plurality of leads; a plurality of bump structures between the die and the leadframe, the bump structures containing a metal study with substantially no Pb; and a molding material encapsulating the plurality of bump structures and the side of the die containing the bond pad.
- 19. An electronic apparatus, comprising:
a semiconductor package containing:
a die containing a bond pad; a leadframe containing a plurality of leads; a plurality of bump structures between the die and the leadframe, the bump structures containing a metal stud with substantially no Pb; and a molding material encapsulating the plurality of bump structures and the side of the die containing the bond pad; and a circuit board.
- 20. A method for making a semiconductor package, the method comprising:
providing a die containing a bond pad; providing a leadframe containing a plurality of leads; providing a plurality of bump structures between the die and the leadframe, the bump structures containing a metal stud with substantially no Pb; and providing a molding material encapsulating the plurality of bump structures and the side of the die containing the bond pad.
- 21. The method of claim 20, including further providing the bump structures so that the metal stud is located on the bond pad.
- 22. The method of claim 20, including providing the solderable area with a pad containing a noble metal.
- 23. The method of claim 22, including providing the leadframe with a solder dam surrounding the solderable area, the solder dam comprising a metal oxide or polymeric material.
- 24. A method for forming a semiconductor package, the method comprising:
providing a die with a metal stud on a bond pad; providing a leadframe containing a plurality of leads, the leadframe containing a solderable area surrounded by a solder dam; providing a solder paste in or on the solderable area; attaching the die and the leadframe; and molding a molding material around a portion of the die and a portion of the leadframe.
- 25. The method of claim 24, wherein the metal stud contains substantially no Pb.
- 26. The method of claim 25, wherein the amount of Pb in the metal stud is less than about 1 ppm.
- 27. The method of claim 24, including attaching the die to the leadframe by flipping the die and contacting the metal stud with the solder paste.
- 28. The method of claim 24, wherein the solderable area contains a pad comprising a non-oxidizable metal.
- 29. The method of claim 28, wherein the solder dam comprises a metal oxide or polymer material.
- 30. The method of claim 29, including providing the metal oxide material by providing a metal and then oxidizing the metal.
- 31. The method of claim 29, including providing the polymeric material by screen printing.
- 32. The method of claim 24, including molding by using a film assisted molding process.
- 33. The method of claim 24, further including re-flowing the solder paste after attaching the die and the leadframe.
- 34. A method for forming a semiconductor package, the method comprising:
providing a die with a metal stud on a bond pad, the stud bump containing substantially no Pb; providing a leadframe containing a plurality of leads, the leadframe containing a solderable area surrounded by a solder dam; providing a solder paste on the solderable area; attaching the die and the leadframe by contacting the metal stud with the solder paste; and molding a molding material around a portion of the die and a portion of the leadframe.
- 35. The method of claim 34, wherein the amount of Pb in the metal stud is less than about 1 ppm.
- 36. The method of claim 24, wherein the solderable area contains a pad comprising a non-oxidizable metal and the solder dam comprises a metal oxide or polymer material.
- 37. The method of claim 36, including providing the metal oxide material by providing a metal and then oxidizing the metal.
- 38. The method of claim 24, further including re-flowing the solder paste after attaching the die and the leadframe.
- 39. A method for making an electronic apparatus, comprising:
providing a semiconductor package containing:
a die containing a bond pad; a leadframe containing a plurality of leads; a plurality of bump structures between the die and the leadframe, the bump structures containing a metal study with substantially no Pb; and a molding material encapsulating the plurality of bump structures and the side of the die containing the bond pad; providing a circuit board; and connecting the semiconductor package to the circuit board.
CROSS-REFERENCE TO RELATED APPLICATION
[0001] This application claims priority of U.S. Provisional Application No. 60/417,800, filed on Oct. 3, 2002, the entire disclosure of which is incorporated by reference.
Provisional Applications (1)
|
Number |
Date |
Country |
|
60417800 |
Oct 2002 |
US |