SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Abstract

Peeling of the core material in the wiring substrate of a semiconductor device is suppressed.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view penetrating a sealing body and in which showing an example of the structure of the semiconductor device of Embodiment 1 of the present invention;

FIG. 2 is a cross-sectional view showing the structure of the semiconductor device shown in FIG. 1;

FIG. 3 is an enlarged partial sectional view showing the structure of the section A shown in FIG. 2;

FIG. 4 is an enlarged partial sectional view showing an example of the structure of the wiring substrate included in the semiconductor device shown in FIG. 1;

FIG. 5 is a plan view showing an example of the foldout direction of the fiber in the core material of the wiring substrate shown in FIG. 4;

FIG. 6 is an enlarged partial sectional view showing the structure of the wiring substrate of the modification included in the semiconductor device shown in FIG. 1;

FIG. 7 is a plan view showing an example of the foldout direction of the fiber in one core material of the wiring substrate shown in FIG. 6;

FIG. 8 is an enlarged partial sectional view showing the structure of the wiring substrate of other modifications included in the semiconductor device shown in FIG. 1;

FIG. 9 is a manufacture process-flow picture showing an example of the assembly to the resin molding in the assembly of the semiconductor device shown in FIG. 1;

FIG. 10 is a manufacture process-flow picture showing an example of the assembly after the resin molding in the assembly of the semiconductor device shown in FIG. 1;

FIG. 11 is a manufacture process-flow picture showing the modification of the assembly after the resin molding in the assembly of the semiconductor device shown in FIG. 1;

FIG. 12 is a plan view showing an example in the state where the traveling direction of the dicing blade at the time of the individual separation of the assembly shown in FIG. 10 and the foldout direction of a fiber accomplish an acute angle;

FIG. 13 is a plan view showing an example in the state where the traveling direction of the dicing blade at the time of the individual separation of the assembly shown in FIG. 10 and the foldout direction of a fiber accomplish a right angle or parallel;

FIG. 14 is an enlarged partial sectional view showing an example of the structure of the wiring substrate included in the semiconductor device of Embodiment 2 of the present invention;

FIG. 15 is an enlarged partial sectional view showing the structure of the wiring substrate of the modification included in the semiconductor device of Embodiment 2 of the present invention;

FIG. 16 is an enlarged partial sectional view showing the structure of the wiring substrate of other modifications included in the semiconductor device of Embodiment 2 of the present invention; and

FIGS. 17 and 18 are enlarged partial sectional views showing the structure of the wiring substrate of a comparative example.

Claims

1. A semiconductor device, comprising: a wiring substrate which has a main surface, a back surface opposite to the main surface, a plurality of first electrodes formed in the main surface, a plurality of second electrodes formed in the back surface, and a core material of two sheets which has been arranged in piles between the main surface and the back surface, and was woven into each by a plurality of fibers crossing;a semiconductor chip mounted over the main surface of the wiring substrate;a plurality of wires which electrically connect a plurality of electrodes of the semiconductor chip, and the first electrodes formed in the main surface of the wiring substrate, respectively;a resin body which seals the semiconductor chip and the wires; anda plurality of external terminals formed over the second electrodes;wherein in each of the core material of two sheets, a foldout direction of the fiber and an extending direction of an end face of the wiring substrate which the fiber exposes accomplish an acute angle.

2. A semiconductor device, comprising: a wiring substrate which has a main surface, a back surface opposite to the main surface, a plurality of first electrodes formed in the main surface, a plurality of second electrodes formed in the back surface, and a core material of two sheets which has been arranged in piles between the main surface and the back surface, and was woven into each by a plurality of fibers crossing;a semiconductor chip mounted over the main surface of the wiring substrate;a plurality of wires which electrically connect a plurality of electrodes of the semiconductor chip, and the first electrodes formed in the main surface of the wiring substrate, respectively;a resin body which seals the semiconductor chip and the wires; anda plurality of external terminals formed over the second electrodes;whereinas for one side, a foldout direction of the fiber and an extending direction of an end face which the fiber exposes accomplish an acute angle among the core materials of two sheets; andin another side, a foldout direction of the fiber and an extending direction of an end face of the wiring substrate which the fiber exposes accomplish a right angle or parallel.

3. A semiconductor device according to claim 2, wherein among the core materials of two sheets, a core material with which a foldout direction of the fiber and an extending direction of the end face accomplish an acute angle is arranged at the main surface side, and a core material with which a foldout direction of the fiber and an extending direction of the end face accomplish a right angle or parallel is arranged at the back surface side.

4. A semiconductor device, comprising: a wiring substrate which has a main surface, a back surface opposite to the main surface, a plurality of first electrodes formed in the main surface, a plurality of second electrodes formed in the back surface, and a wiring substrate which has a core material of three or more sheets which has been arranged in piles between the main surface and the back surface, and was woven into each by a plurality of fibers crossing;a semiconductor chip mounted over the main surface of the wiring substrate;a plurality of wires which electrically connect a plurality of electrodes of the semiconductor chip, and the first electrodes formed in the main surface of the wiring substrate, respectively;a resin body which seals the semiconductor chip and the wires; anda plurality of external terminals formed over the second electrodes;wherein in each of the core material of three or more sheets, a foldout direction of the fiber and an extending direction of an end face of the wiring substrate which the fiber exposes have accomplished the same angle.

5. A semiconductor device according to claim 4, wherein each foldout direction of the fiber and extending direction of the end face of the core material of the three or more sheets have accomplished the same acute angle.

6. A semiconductor device according to claim 4, wherein each foldout direction of the fiber and extending direction of the end face of the core material of the three or more sheets have accomplished a right angle or parallel.

7. A semiconductor device, comprising: a wiring substrate which has a main surface, a back surface opposite to the main surface, a plurality of first electrodes formed in the main surface, a plurality of second electrodes formed in the back surface, a core material of odd sheets which has been arranged in piles between the main surface and the back surface, and was woven into each by a plurality of fibers crossing;a semiconductor chip mounted over the main surface of the wiring substrate;a plurality of wires which electrically connect a plurality of electrodes of the semiconductor chip, and the first electrodes formed in the main surface of the wiring substrate, respectively;a resin body which seals the semiconductor chip and the wires; anda plurality of external terminals formed over the second electrodes;whereina core material with which a foldout direction of the fiber and an extending direction of an end face which the fiber exposes have accomplished the respectively same first angle is arranged to a top layer and an undermost layer among the core materials of odd sheets; anda core material which accomplishes a different second angle from the first angle is arranged between the top layer and the undermost layer.

8. A semiconductor device according to claim 7, wherein three sheets of the core material are arranged, the first angle is right-angled or parallel, and the second angle is an acute angle.

9. A method of manufacturing a semiconductor device, comprising the steps of: (a) preparing a multi-chip substrate which has a main surface, a back surface opposite to the main surface, a plurality of first electrodes formed in the main surface, a plurality of second electrodes formed in the back surface, and a core material of two sheets which has been arranged in piles and woven into each by a plurality of fibers crossing between the main surface and the back surface;(b) mounting a semiconductor chip over the main surface of the multi-chip substrate;(c) electrically connecting with a wire a plurality of electrodes of the semiconductor chip, and the first electrodes formed in the main surface of the multi-chip substrate, respectively;(d) sealing the semiconductor chip and a plurality of wires; and(e) exposing the fiber to an end face formed by a division by dividing the multi-chip substrate so that each foldout direction of the fiber and dividing direction of the core material of two sheets of the multi-chip substrate may accomplish an acute angle;wherein each foldout direction of the fiber and extending direction of the end face of the core material of two sheets in the multi-chip substrate accomplish an acute angle.

10. A method of manufacturing a semiconductor device, comprising the steps of: (a) preparing a multi-chip substrate which has a main surface, a back surface opposite to the main surface, a plurality of first electrodes formed in the main surface, a plurality of second electrodes formed in the back surface, and a core material of two sheets which has been arranged in piles and woven into each by a plurality of fibers crossing between the main surface and the back surface;(b) mounting a semiconductor chip over the main surface of the multi-chip substrate;(c) electrically connecting with a wire a plurality of electrodes of the semiconductor chip, and the first electrodes formed in the main surface of the multi-chip substrate, respectively;(d) sealing the semiconductor chip and a plurality of wires; and(e) exposing the fiber to an end face formed by a division, by dividing so that a foldout direction and dividing direction of the fiber may accomplish an acute angle as to one core material, and by dividing the multi-chip substrate so that a foldout direction and dividing direction of the fiber may accomplish a right angle or parallel as to a core material of another side among the core materials of two sheets of the multi-chip substrate;wherein as for one core material, a foldout direction of the fiber and an extending direction of the end face accomplish an acute angle among the core materials of two sheets of the multi-chip substrate, and as for a core material of another side, a foldout direction of the fiber and an extending direction of the end face accomplish a right angle or parallel.

11. A method of manufacturing a semiconductor device according to claim 10, wherein among the core materials of two sheets, a core material with which a foldout direction of the fiber and an extending direction of the end face accomplish an acute angle is arranged at the main surface side, and a core material with which a foldout direction of the fiber and an extending direction of the end face accomplish a right angle or parallel is arranged at the back surface side.

12. A method of manufacturing a semiconductor device, comprising the steps of: (a) preparing a multi-chip substrate which has a main surface, a back surface opposite to the main surface, a plurality of first electrodes formed in the main surface, a plurality of second electrodes formed in the back surface, and a core material of three or more sheets which has been arranged in piles and woven into each by a plurality of fibers crossing between the main surface and the back surface;(b) mounting a semiconductor chip over the main surface of the multi-chip substrate;(c) electrically connecting with a wire a plurality of electrodes of the semiconductor chip, and the first electrodes formed in the main surface of the multi-chip substrate, respectively;(d) sealing the semiconductor chip and a plurality of wires; and(e) exposing the fiber to an end face formed by a division by dividing the multi-chip substrate so that a foldout direction of each of the fiber of the core material of three or more sheets of the multi-chip substrate and a dividing direction may accomplish the same angle,wherein each foldout direction of the fiber and extending direction of the end face of the core material of three or more sheets in the multi-chip substrate accomplish the same angle.

13. A method of manufacturing a semiconductor device according to claim 12, wherein a foldout direction of each of the fiber of the core material of three or more sheets and an extending direction of the end face accomplish the same acute angle.

14. A method of manufacturing a semiconductor device according to claim 12, wherein a foldout direction of each of the fiber of the core material of three or more sheets and an extending direction of the end face accomplish a right angle or parallel.