Claims
- 1. A semiconductor device having an aluminum alloy wiring line, comprising:
- a substrate; and
- a semiconductor package electrically connected to the substrate through bump contacts formed by metallurgically attaching balls, having a Brinell hardness which is greater than H.sub.B 6, to the aluminum alloy wiring line by mutual diffusion between a surface of the aluminum alloy wiring line and a surface of the balls, each of said balls having been formed by heating the tip of a fine alloy wire formed of an alloy material produced by drawing a rapidly-quenched alloy, said alloy comprising:
- Sn as a principal element;
- 0.01-10 Wt % Sb; and
- 0.01-10 wt % Zn;
- wherein the fine alloy wire from which said balls are formed is passed through a capillary tube employed in a wire bonder, and the balls are joined to the aluminum alloy wiring lines by a wire bonding method.
- 2. A semiconductor device having an aluminum alloy wiring line, comprising:
- a substrate; and
- a semiconductor package electrically connected to the substrate through bump contacts formed by metallurgically attaching balls, having a Brinell hardness which is greater than H.sub.B 6, to the aluminum alloy wiring line by mutual diffusion between a surface of the aluminum alloy wiring line and a surface of the balls, each of said balls having been formed by heating the tip of a fine alloy wire formed of an alloy material produced by drawing a rapidly-quenched alloy, said alloy comprising:
- Pb as a principal element;
- 1-10 Wt % Sb; and
- 0.05-3 wt % Zn;
- wherein the fine alloy wire from which said balls are formed is passed through a capillary tube employed in a wire bonder, and the balls are joined to the aluminum alloy wiring lines by a wire bonding method.
- 3. The semiconductor device according to claim 2 wherein said alloy material forming the fine alloy wire contains, as an additive element at least one element selected from the group consisting of Cu, Ni, Ag, Pt, Pd and P.
- 4. The semiconductor device according to claim 2, wherein the Brinell hardness number of the ball is in the range of H.sub.B 6 to H.sub.B 26.
- 5. The semiconductor device according to claim 2, wherein the semiconductor device is of a flip-chip mount type.
- 6. A semiconductor device according to claim 2, wherein the semiconductor device is of tape carrier bonding type.
- 7. The semiconductor device of claim 2 wherein said wiring lines are formed on said substrate.
- 8. The semiconductor device of claim 2 wherein said wiring lines are formed on said semiconductor package.
- 9. The semiconductor device according to claim 7 wherein said alloy material forming the fine alloy wire contains, as an additive element, at least one element selected from the group consisting of Cu, Ni, Ag, Pt, Pd and P.
- 10. The semiconductor device according to claim 8 wherein said alloy material forming the fine alloy wire contains, as an additive element, at least one element selected from the group consisting of Cu, Ni, Ag, Pt, Pd and P.
- 11. The semiconductor device according to claim 3 wherein the Brinell hardness number of said balls is in the range of H.sub.B 6 to H.sub.B 26.
- 12. The semiconductor device according to claim 5 wherein the Brinell hardness number of said balls is in the range of H.sub.B 6 to H.sub.B 26.
- 13. The semiconductor device according to claim 6 wherein the Brinell hardness number of said balls is in the range of H.sub.B 6 to H.sub.B 26.
- 14. The semiconductor device according to claim 7 wherein the Brinell hardness number of said balls is in the range of H.sub.B 6 to H.sub.B 26.
- 15. The semiconductor device according to claim 8 wherein the Brinell hardness number of said balls is in the range of H.sub.B 6 to H.sub.B 26.
- 16. The semiconductor device according to claim 9 wherein the Brinell hardness number of said balls is in the range of H.sub.B 6 to H.sub.B 26.
- 17. The semiconductor device according to claim 10 wherein the Brinell hardness number of said balls is in the range of H.sub.B 6 to H.sub.B 26.
Priority Claims (3)
Number |
Date |
Country |
Kind |
1-340132 |
Dec 1989 |
JPX |
|
2-171991 |
Jun 1990 |
JPX |
|
2-222729 |
Aug 1990 |
JPX |
|
Parent Case Info
This application is a division of application Ser. No. 07/618,900, filed Nov. 28, 1990, now U.S. Pat. No. 5,366,692.
US Referenced Citations (19)
Foreign Referenced Citations (5)
Number |
Date |
Country |
0264648 |
Apr 1988 |
EPX |
0288776 |
Nov 1988 |
EPX |
0326018 |
Aug 1989 |
EPX |
0301535 |
Dec 1988 |
JPX |
2201545 |
Sep 1991 |
GBX |
Non-Patent Literature Citations (1)
Entry |
English translation of claim 1 of Japanese Patent 63-301535. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
618900 |
Nov 1990 |
|