Patent Grant
10811341
Not Applicable
1. Field of the Invention
The present invention relates generally to semiconductor devices, and more particularly to a semiconductor device having a thin profile and optimized electrical signal paths to provide enhanced electrical performance.
2. Description of the Related Art
The variety of electronic devices utilizing semiconductor devices or packages has grown dramatically in recent years. These electronic devices include cellular phones, portable computers, etc. Each of these electronic devices typically includes a printed circuit board on which a significant number of such semiconductor devices or packages are secured to provide multiple electronic functions. These electronic devices are typically manufactured in reduced sizes and at reduced costs, which results in increased consumer demand. However, even though many semiconductor devices have been miniaturized, space on a printed circuit board remains limited and precious. Thus, there is a continuing need to develop semiconductor device designs (e.g., semiconductor devices which are of increasingly reduced thickness) to maximize the number of semiconductor devices that may be integrated into an electronic device, yet minimize the space needed to accommodate these semiconductor devices. The need also exists for new semiconductor device designs to possess increased functionality, despite the smaller size of slimmer/thinner profiles thereof.
One method to minimize the space needed to accommodate semiconductor devices is to stack plural semiconductor dies in a single semiconductor device which is itself fabricated to be of a reduced size. However, semiconductor devices including stacked plural semiconductor dies are typically connected to an external circuit board through the use of solder balls or lands disposed solely on a lower external surface thereof. In this regard, when the size of the semiconductor device itself is reduced, the available space for input/output terminals (e.g., lands) is restricted. As a result, when the size of the semiconductor device is reduced, it is often difficult to realize various functions thereof due the insufficient availability of input/output terminals. Stated another way, when plural semiconductor dies are stacked in a single semiconductor device, the need arises for an increased number of input/output terminals for inputting/outputting electrical signals to each semiconductor die, though the smaller size of the semiconductor device creates limits in the available space for increasing the number of input/output terminals. Thus, the problem that arises is that is often difficult to form the input/output terminals when the size of the semiconductor device is reduced. When the input/output terminals are formed using solder balls, this particular problem becomes even more severe due to the volume of solder balls.
In an effort to address the aforementioned problems, there has been developed POP (package on package) technology to stack a semiconductor device on another semiconductor device, and PIP (package in package) technology to install a semiconductor device in another semiconductor device. A typical PIP semiconductor device comprises various combinations of electronic components including passive devices, semiconductor dies, semiconductor packages, and/or other elements which are arranged in a horizontal direction, or stacked in a vertical direction on an underlying substrate. In many PIP devices, the substrate and the electronic components are interconnected to one another through the use of conductive wires alone or in combination with conductive bumps, with such electronic components thereafter being encapsulated by a suitable encapsulant material which hardens into a package body of the PIP device. However, the drawbacks of both POP and PIP technology is that it is difficult to secure and stack the input/output terminals through the use of either technology as a result of the input/output terminals of the semiconductor device typically being formed only on one surface (e.g., the lower surface) thereof. The present invention addresses these and other shortcomings of prior art POP and PIP devices, as will be described in more detail below.
In accordance with the present invention, there is provided multiple embodiments of a semiconductor device. In each embodiment, the semiconductor device comprises a substrate having a conductive pattern formed thereon. In addition to the substrate, each embodiment of the semiconductor device includes at least one semiconductor die which is electrically connected to the substrate, both the semiconductor die and the substrate being at least partially covered by a package body of the semiconductor device. In certain embodiments of the semiconductor device, through-mold vias are formed in the package body to provide electrical signal paths from an exterior surface thereof to the conductive pattern of the substrate. In other embodiments, through mold vias are also included in the package body to provide electrical signal paths between the semiconductor die and an exterior surface of the package body. Other embodiments of the semiconductor device comprise one or more interposers which are electrically connected to the through-mold vias, and may be covered by the package body and/or disposed in spaced relation thereto. In yet other embodiments of the semiconductor device, the interposer may not be electrically connected to the through mold vias, but may have one or more semiconductor dies of the semiconductor device electrically connected thereto.
The present invention is best understood by reference to the following detailed description when read in conjunction with the accompanying drawings.
These, as well as other features of the present invention, will become more apparent upon reference to the drawings wherein:
Common reference numerals are used throughout the drawings and detailed description to indicate like elements.
Referring now to the drawings wherein the showings are for purposes of illustrating various embodiments of the present invention and not for purposes of limiting the same,
The semiconductor device 100 further comprises a semiconductor die 120 which is electrically connected to the substrate 110, and in particular to the conductive pattern 112 thereof. The semiconductor die 120 defines opposed, generally planar top and bottom surfaces, and includes a plurality of terminals or bond pads 121 disposed on the top surface thereof. In
As further seen in
The semiconductor device 100 further comprises a plurality of solder balls 160 which are electrically connected to the respective ones of the lands 113 of the substrate 110 in a prescribed pattern or arrangement. As seen in
In the semiconductor device 100, at least portions of the semiconductor die 120, the conductive bumps 130, the top surface of the insulating layer 114, and the conductive pattern 112 are each encapsulated or covered by an encapsulant material which ultimately hardens into a package body 140 of the semiconductor device 100. The present invention is not intended to be limited to any specific material which could be used to facilitate the fabrication of the package body 140. For example, and not by way of limitation, the package body 140 can be formed from epoxy molding compounds or equivalents thereto. The fully formed package body 140 preferably includes a generally planar top surface, and generally planar side surfaces which extend in generally flush or co-planar relation to respective side surfaces of the insulating layer 114 of the substrate 110.
In the semiconductor device 100, the package body 140 includes a plurality of through-mold vias 150 formed therein. Each through-mold via (TMV) 150 extends from the top surface of the package body 140 to a respective one of the bond pads 121 disposed on the top surface of the semiconductor die 120. Each TMV 150 is preferably formed by creating a hole in the package body 140 using a laser or an etching solution, and filling such hole with a conductive material selected from copper, aluminum, gold, silver, tin, lead, bismuth, soldering materials or equivalents thereto. In this regard, it is contemplated that the fabrication of each TMV 150 may be facilitated by the completion of a reflow process subsequent to placing a ball fabricated from one of the aforementioned materials on top of the hole formed in the package body 140 through the use of one of the aforementioned processes.
As seen in
Due to the inclusion of the TMV's 150 therein, the semiconductor device 100 is particularly suited for having another semiconductor device stacked thereon and electrically connected thereto. In this regard, the lands or solder balls of a second semiconductor device can be electrically coupled to respective ones of the TMV's 150 exposed in the top surface of the package body 140. Along these lines, it is contemplated that the end of each TMV 150 extending to the top surface of the package body 140 have a generally concave configuration to partially accommodate the solder balls of a conventional BGA (Ball Grid Array) semiconductor device which may be stacked upon the semiconductor device 100, thus reducing the overall height or profile of the stack. Another semiconductor device suitable for stacking upon the semiconductor device 100 is an LGA (Land Grid Array) device, the stack comprising the semiconductor device 100 and the LGA device also being of comparatively reduced thickness due to the use of the TMV's 150 to facilitate the electrical interconnection therebetween.
Referring now to
Referring now to
In the next step S2 of the fabrication process for the semiconductor device 100, the semiconductor die 120 is prepared. More particularly, as shown in
Referring now to
Referring now to
In the next step S6 of the fabrication process for the semiconductor device 100, the TMV's 150 are formed in the package body 140. More particularly, the formation of the TMV's 150 comprises the initial step of forming vias or holes 140a in the package body 140 as shown in
Referring now to
Referring now to
The sole distinction between the semiconductor devices 100, 200 lies in the addition of through-mold vias (TMV's) 250 to the package body 140 of the semiconductor device 200. As seen in
Referring now to
In addition to the first semiconductor die 320, the semiconductor device 300 includes a second (lower) semiconductor die 325 which is also electrically connected to the substrate 110, and in particular the lands 113 thereof. Like the first semiconductor die 320, the second semiconductor die 325 defines opposed, generally planar top and bottom surfaces, and includes a plurality of bond pads 326 on that surface which defines the top surface as viewed from the perspective shown in
In the semiconductor device 300, at least portions of the first and second semiconductor dies 320, 325, the conductive wires 330, the conductive bumps 331, the top and bottom surfaces of the insulating layer 114, the conductive pattern 112, and the lands 113 are each encapsulated or covered by an encapsulant material which ultimately hardens into a package body 340 of the semiconductor device 300. The package body 340 may be fabricated from the same material described above in relation to the package body 140 of the semiconductor device 100. As seen in
In the semiconductor device 300, the package body 340 includes a plurality of through-mold vias (TMV's) 350 disposed therein. As seen in
Referring now to
In addition to the substrate 110, the semiconductor device 400 comprises a first (lower) semiconductor die 320 which is electrically connected to the conductive pattern 112 of the substrate 110. More particularly, the first semiconductor die 420 defines opposed, generally planar top and bottom surfaces, and includes a plurality of terminals or bond pads 421 disposed on the bottom surface thereof. Each of the bond pads 421 is electrically connected to the conductive pattern 112 through the use of a respective one of a plurality of conductive bumps 430. The conductive bumps 430 are each preferably fabricated from the same material described above in relation to the conductive bumps 130 of the semiconductor device 100.
The semiconductor device 400 further comprises an interposer 423 which is attached to the top surface of the first semiconductor die 420 through the use of an adhesive layer 415. The interposer 423 includes an interposer body 424 having a first conductive pattern 423a formed within the top surface thereof, a second conductive pattern 423b formed therein, and a third conductive pattern 423c which is also formed therein and electrically connects the first and second conductive patterns 423a, 423b to each other. That surface of the body 424 disposed furthest from the first conductive pattern 423a is secured to the top surface of the first semiconductor die 420 through the use of the aforementioned adhesive layer 413. As seen in
The semiconductor device 400 further comprises a second (upper) semiconductor die 425 which is electrically connected to the interposer 423, and in particular to the first conductive pattern 423a formed on the body 424 thereof. Like the first semiconductor die 420, the second semiconductor die 425 defines opposed, generally planar top and bottom surfaces. Disposed on the bottom surface of the first semiconductor die 425 is a plurality of conductive terminals or bond pads 426. The bond pads 426 are each electrically connected to the first conductive pattern 423a through the use of respective ones of a plurality of conductive bumps 431 which are each preferably fabricated from the same material used in relation to the conductive bumps 430. As seen in
In the semiconductor device 400, the interposer 423 (and hence the second semiconductor die 425) is electrically connected to the conductive pattern 112 of the substrate 110 through the use of one or more electrically conductive wires 432. More particularly, one end of each conductive wire 432 extends and is electrically connected to a portion of the first conductive pattern 423a which is exposed in the peripheral portion of the substrate 423, and in particular the body 424 thereof. The remaining, opposite end of the conductive wire 432 is electrically connected to a prescribed portion of the conductive pattern 112 of the substrate 110. Thus, the second semiconductor die 425 is capable of receiving electrical signals from and outputting electrical signals to an external circuit via the interposer 423, conductive wire(s) 432, and substrate 110.
In the semiconductor device 400, at least portions of the first and second semiconductor dies 420, 425, the conductive bumps 430, 431, the interposer 423, the conductive wires 432, the insulating layer 114 of the substrate 110, and the conductive pattern 112 are each encapsulated or covered by an encapsulant material which ultimately hardens into a package body 440 of the semiconductor device 100. The package body 440 may be fabricated from the same materials described above in relation to the package body 140 of the semiconductor device 100. The fully formed package body 440 preferably includes a generally planar top surface, and generally planar side surfaces which extend in generally flush or co-planar relation to respective side surfaces of the insulating layer 114 of the substrate 110.
In the semiconductor device 400, the package body 440 preferably includes a plurality of through-mold vias (TMV's) 450 formed therein. As seen in
Referring now to
The semiconductor device 500 further comprises an interposer 523 which is disposed on the top surface of the first semiconductor die 420 and electrically connected to the first semiconductor die 120. The interposer 523 includes an interposer body 524 having a first conductive pattern 523a formed within the top surface thereof, a second conductive pattern 523b formed therein, and a third conductive pattern 523c which is also formed therein and electrically connects the first and second conductive patterns 523a, 523b to each other. As seen in
The semiconductor device 500 further comprises the second (upper) semiconductor die 425 described above in relation to the semiconductor device 400. In this regard, the second semiconductor die 425 is electrically connected to the interposer 523, and in particular to the first conductive pattern 523a formed on the body 524 thereof. The bond pads 426 of the second semiconductor die 425 are each electrically connected to the first conductive pattern 523a through the use of respective ones of the aforementioned conductive bumps 431. As seen in
In the semiconductor device 500, at least portions of the first and second semiconductor dies 120, 425, the conductive bumps 130, 431, the interposer 523, the conductive balls 551, the insulating layer 114 of the substrate 110, and the conductive pattern 112 are each encapsulated or covered by an encapsulant material which ultimately hardens into a package body 540 of the semiconductor device 500. The package body 540 may be fabricated from the same materials described above in relation to the package body 140 of the semiconductor device 100. The fully formed package body 540 preferably includes a generally planar top surface, and generally planar side surfaces which extend in generally flush or co-planar relation to respective side surfaces of the insulating layer 114 of the substrate 110.
In the semiconductor device 500, the package body 140 preferably includes a plurality of through-mold vias (TMV's) 550 formed therein. Each TMV 550 includes a first region which is defined by a respective one of the conductive balls 551 electrically connected to the conductive pattern 112 of the substrate 110. In addition to the first region, each TMV 550 includes a second region 552 which extends from the top surface of the package body 140 to a respective one of the conductive balls 551. The second region 552 of each TMV 550 is identically configured to the above-described TMV's 250, 350, 450, and is preferably fabricated using the same process described above in relation to each TMV 150. In this regard, the second region 552 of each TMV 550 is defined by a metal-filled hole which is formed in the package body 540 to extend from the top surface thereof to a corresponding conductive ball 551 (i.e., the first region of the same TMV 550). Thus, each TMV 550 (comprising the second region 552 and the first region or conductive ball 551) extends from the top surface of the package body 540 to (and in electrical communication with) the conductive pattern 112. Since the second regions 552 of the TMV's 550 extend to respective ones of the conductive balls 551 rather than to the conductive pattern 112, each second region 552 is of a shorter height in comparison to the TMV's 450 included in the semiconductor device 400, though being fabricated in the same manner as indicated above. Due to the shortened height of height of the second regions 552 of the TMV's 550, including the holes used to form the same, potential adverse effects on the first and second semiconductor dies 120, 425 attributable to the formation of the holes is reduced, thus improving the reliability of the semiconductor device 500.
Referring now to
In the semiconductor device 600, at least portions of the semiconductor die 420, the conductive bumps 430, the insulating layer 114 of the substrate 110, and the conductive pattern 112 are each encapsulated or covered by an encapsulant material which ultimately hardens into a package body 640 of the semiconductor device 600. The package body 640 may be fabricated from the same materials described above in relation to the package body 140 of the semiconductor device 100. The fully formed package body 640 preferably includes a generally planar top surface, and generally planar side surfaces which extend in generally flush or co-planar relation to respective side surfaces of the insulating layer 114 of the substrate 110. The generally planar top surface of the semiconductor die 420 is preferably exposed in and substantially flush with the top surface of the package body 640.
In the semiconductor device 600, the package body 640 preferably includes a plurality of through-mold vias (TMV's) 650 formed therein. Each TMV 650 preferably comprises a conductive ball which is electrically connected to a peripheral portion of the conductive pattern 112. The conductive balls used to define the TMV's 650 are preferably fabricated from a conductive material selected from copper, aluminum, gold, silver, tin, lead, bismuth, soldering materials or equivalents thereto. Importantly, in the semiconductor device 600, the package body 640 is formed in a manner wherein portions of the conductive balls used to form the TMV's 650 protrude from the top surface of the package body 640 in the manner shown in
The semiconductor device 600 further comprises an interposer 623 which is disposed on and electrically connected to the TMV's 650. The interposer 623 includes an interposer body 624 having a first conductive pattern 623a formed within the top surface thereof, a second conductive pattern 623b formed therein, and a third conductive pattern 623c which is also formed therein and electrically connects the first and second conductive patterns 623a, 623b to each other. As seen in
Referring now to
Referring now to
In the next step S2 of the fabrication process for the semiconductor device 600, the semiconductor die 420 is prepared. More particularly, as shown in
Referring now to
Referring now to
Referring now to
In the next step S7 of the fabrication process for the semiconductor device 600 shown in
Referring now to
Referring now to
In the semiconductor device 700, a plurality of conductive balls (which ultimately define lower through-mold vias or TMV's 650 as described below) are electrically connected to a peripheral portion of the first conductive pattern 112. The conductive balls used to define the TMV's 650 are preferably fabricated from a conductive material selected from copper, aluminum, gold, silver, tin, lead, bismuth, soldering materials or equivalents thereto.
The semiconductor device 700 further comprises a first (lower) interposer 723 which is disposed on and electrically connected to the conductive balls ultimately defining the TMV's 650. The first interposer 723 includes an interposer body 724 having a first conductive pattern 723a formed within the top surface thereof, a second conductive pattern 723b formed therein, and a third conductive pattern 723c which is also formed therein and electrically connects the first and second conductive patterns 723a, 723b to each other. As seen in
The semiconductor device 700 also includes a second (upper) semiconductor die 425 which is identical to the above-described semiconductor 425 of the semiconductor device 400, and is electrically connected to a central portion of the first conductive pattern 723a of the first interposer 723 through the use of the conductive bumps 431 in the same manner described above in relation to electrical connection of the second semiconductor die 425 of the semiconductor device 400 to the first conductive pattern 423a of the interposer 423 thereof. In the semiconductor device 700, a plurality of conductive balls (which ultimately define upper through-mold vias or TMV's 750 as described below) are electrically connected to a peripheral portion of the first conductive pattern 723a of the first interposer 723. The conductive balls used to define the TMV's 750 are also preferably fabricated from a conductive material selected from copper, aluminum, gold, silver, tin, lead, bismuth, soldering materials or equivalents thereto.
In the semiconductor device 700, at least portions of the first and second semiconductor dies 420, 425, the first interposer 723, the conductive bumps 430, the conductive balls ultimately defining the TMV's 650, 750, the insulating layer 114 of the substrate 110, and the conductive pattern 112 are each encapsulated or covered by an encapsulant material which ultimately hardens into a package body 740 of the semiconductor device 700. The package body 740 may be fabricated from the same materials described above in relation to the package body 140 of the semiconductor device 100. The fully formed package body 740 preferably includes a generally planar top surface, and generally planar side surfaces which extend in generally flush or co-planar relation to respective side surfaces of the insulating layer 114 of the substrate 110. The generally planar top surface of the second semiconductor die 425 is preferably exposed in and substantially flush with the top surface of the package body 740.
In the semiconductor device 700, the TMVs 650 are defined by the encapsulation of the conductive balls electrically connected to and extending between the conductive pattern 112 of the substrate 110 and the second conductive pattern 723b of the interposer 723. Similarly, the upper TMVs 750 are defined by the partial encapsulation of the conductive balls electrically connected to the first conductive pattern 723a of the interposer 723 with the package body 740. Importantly, in the semiconductor device 700, the package body 740 is formed in a manner wherein portions of the conductive balls used to form the TMV's 750 protrude from the top surface of the package body 740 in the manner shown in
The semiconductor device 700 further comprises a second (upper) interposer 770 which is disposed on and electrically connected to the TMV's 750. The second interposer 770 includes an interposer body 774 having a first conductive pattern 771 formed within the top surface thereof, a second conductive pattern 772 formed therein, and a third conductive pattern 773 which is also formed therein and electrically connects the first and second conductive patterns 771, 772 to each other. As seen in
Referring now to
One of the differences between the semiconductor devices 800, 700 lies in the omission of the above-described second interposer 770 in the semiconductor device 800. Additionally, in the semiconductor device 800, the package body 740 described above in relation to the semiconductor device 700 is substituted with the package body 840 which is formed to completely cover the top surface of the second semiconductor die 425. This is in contrast to the semiconductor device 700 wherein the top surface of the second semiconductor die 425 is exposed in the top surface of the package body 740.
Another distinction between the semiconductor devices 800, 700 lies in the substitution of the above-described TMV's 750 of the semiconductor device 700 with the TMV's 850 included in the semiconductor device 800. In this regard, each of the TMV's 850 bears substantial structural similarity to the TMV's 550 described above in relation to the semiconductor device 500. More particularly, as seen in
Referring now to
The semiconductor device 900 further comprises a second (upper) semiconductor die 925. The second semiconductor die 925 defines opposed, generally planar top and bottom surfaces, and includes a plurality of conductive terminals or bond pads 926 disposed on the top surface thereof when viewed from the perspective shown in
In the semiconductor device 900, at least portions of the first and second semiconductor dies 420, 925, the conductive bumps 430, 931, the insulating layer 114 of the substrate 110 and the conductive pattern 112 are each encapsulated or covered by an encapsulant material which ultimately hardens into a package body 940 of the semiconductor device 900. The package body 940 may be fabricated from the same materials described above in relation to the package body 140 of the semiconductor device 100. The fully formed package body 940 preferably includes a generally planar top surface, and generally planar side surfaces which extend in substantially flush or co-planar relation to respective side surfaces of the insulating layer 114 of the substrate 110. As seen in
In the semiconductor device 900, the package body 940 preferably includes a plurality of through-mold vias (TMV's) 950 formed therein. Each TMV 950 preferably comprises a conductive ball which is electrically connected to a peripheral portion of the conductive pattern 112. The conductive balls used to define the TMV's 950 are preferably fabricated from a conductive material selected from copper, aluminum, gold, silver, tin, lead, bismuth, soldering materials or equivalents thereto. Importantly, in the semiconductor device 900, the package body 940 is formed in a manner wherein portions of the conductive balls used to form the TMV's 950 protrude from the top surface of the package body 940 in the manner shown in
The semiconductor device 900 further comprises an interposer 970 which is disposed on and electrically connected to the conductive bumps 931 and the TMV's 950. The interposer 970 includes an interposer body 974 having a first conductive pattern 971 formed within the top surface thereof, a second conductive pattern 972 formed therein, and a third conductive pattern 973 which is also formed therein and electrically connects the first and second conductive patterns 971, 972 to each other. As seen in
This disclosure provides exemplary embodiments of the present invention. The scope of the present invention is not limited by these exemplary embodiments. Numerous variations, whether explicitly provided for by the specification or implied by the specification, such as variations in structure, dimension, type of material and manufacturing process may be implemented by one of skill in the art in view of this disclosure.
This application is a divisional application of co-pending U.S. patent application Ser. No. 15/390,568 filed on Dec. 26, 2016, which is a divisional application of U.S. patent application Ser. No. 12/348,813 filed on Jan. 5, 2009, both of which are expressly incorporated by reference herein.
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| Number | Date | Country | |
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| 20180308788 A1 | Oct 2018 | US |
| Number | Date | Country | |
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| Parent | 15390568 | Dec 2016 | US |
| Child | 16025465 | US | |
| Parent | 12348813 | Jan 2009 | US |
| Child | 15390568 | US |
