Claims
- 1. A method of fabricating a semiconductor integrated circuit device, comprising the steps of:
(a) forming a first aluminum film over a first insulating film formed over a semiconductor substrate; (b) forming a first titanium film over said first aluminum film; (c) forming a first titanium nitride film over said first titanium film; (d) forming a second insulating film over said first titanium nitride film; (e) forming first through-holes in said second insulating film, said first through-holes being connected with said first titanium film; (f) forming a second titanium film over a surface of said first through-holes and said second insulating film; (g) forming a second titanium nitride film over said second titanium film; (h) forming a first tungsten film over said second titanium nitride film such that said first through-holes are filled with said first tungsten film; (i) removing said first tungsten film over said second titanium nitride film such that said first tungsten film formed in said first through-holes is left; (j) forming a third titanium film over said second titanium film and said first tungsten film formed in said first through-holes; and (k) forming a second aluminum film over said third titanium film;
wherein said step (a) comprises: a first step of depositing a first aluminum by sputtering under conditions that said semiconductor substrate is kept at a first temperature and said first aluminum is deposited at a first deposition rate; and a second step of depositing a second aluminum by sputtering on said first aluminum under conditions that said semiconductor substrate is kept at a second temperature higher than said first temperature and said second aluminum is deposited at a second deposition rate lower than said first deposition rate, and
wherein said step (k) comprises: a first step of depositing a third aluminum by sputtering under conditions that said semiconductor substrate is kept at a third temperature and said third aluminum is deposited at a third deposition rate; and a second step of depositing a fourth aluminum by sputtering on said third aluminum under conditions that said semiconductor substrate is kept at a fourth temperature higher than said third temperature and said fourth aluminum is deposited at a fourth deposition rate lower than said third deposition rate.
- 2. A method of fabricating a semiconductor integrated circuit device according to claim 1, wherein each of the first and second aluminum films contains silicon and copper in addition to aluminum.
Priority Claims (1)
Number |
Date |
Country |
Kind |
7-2551 |
Jan 1995 |
JP |
|
Parent Case Info
[0001] This application is a Continuation application of application Ser. No. 09/998,644, filed Dec. 3, 2001, which is a Divisional application of application Ser. No. 09/245,743, filed Feb. 8, 1999, which is a Divisional application of application Ser. No. 08/584,065, filed Jan. 11, 1996, now U.S. Pat. No. 5,904,556, the contents of which are incorporated herein by reference in their entirety.
Divisions (2)
|
Number |
Date |
Country |
Parent |
09245743 |
Feb 1999 |
US |
Child |
09933163 |
Aug 2001 |
US |
Parent |
08584065 |
Jan 1996 |
US |
Child |
09245743 |
Feb 1999 |
US |
Continuations (3)
|
Number |
Date |
Country |
Parent |
10430402 |
May 2003 |
US |
Child |
10872508 |
Jun 2004 |
US |
Parent |
09998644 |
Dec 2001 |
US |
Child |
10430402 |
May 2003 |
US |
Parent |
09933163 |
Aug 2001 |
US |
Child |
09998644 |
Dec 2001 |
US |