Claims
- 1. A semiconductor integrated circuit device which comprises:(a) a semiconductor substrate; (b) a first interconnection film formed over said semiconductor substrate; (c) an insulating film formed on said first interconnection film and having a plurality of through-holes; (d) a second interconnection film connected with said first interconnection film through the through-holes and formed on said insulating film; and (e) a bonding wire connected to the second interconnection film, wherein said first interconnection film is constituted of a first aluminum alloy film, a titanium film formed on said first aluminum alloy film, and a first titanium nitride film or a zirconium nitride film formed on said titanium film, and said second interconnection film is constituted of a second aluminum alloy film, a nitride film formed on said second aluminum alloy film and a second titanium nitride film formed on said nitride film, and said nitride film and said second titanium nitride film are removed from a region where said bonding wire is.
- 2. A semiconductor integrated circuit device according to claim 1, wherein said first titanium nitride film is formed on said titanium film.
- 3. A semiconductor integrated circuit device according to claim 2, wherein an amount of fluorine in the first titanium nitride film is at most 6 atomic percent.
- 4. A semiconductor integrated circuit device which comprises:(a) a semiconductor substrate; (b) a first interconnection film formed over said semiconductor substrate; (c) an insulating film formed on said first interconnection film and having a plurality of through-holes; (d) a second interconnection film connected with said first interconnection film through the through-holes and formed on said insulating film; and (e) a bonding wire connected to the second interconnection film, wherein said first interconnection film is constituted of a first aluminum alloy film, a titanium film formed on said first aluminum alloy film, and a first titanium nitride film or a zirconium nitride film formed on said titanium film, and said second interconnection film is constituted of a second aluminum alloy film, an oxide film formed on said second aluminum alloy film and a second titanium nitride film formed on said oxide film, and said oxide film and said second titanium nitride film are removed from a region where said bonding wire is.
- 5. A semiconductor integrated circuit device according to claim 4, wherein said first titanium nitride film is formed on said titanium film.
- 6. A semiconductor integrated circuit device according to claim 4, wherein said oxide film is a film formed by exposing the second aluminum alloy film to air.
Priority Claims (1)
Number |
Date |
Country |
Kind |
7-2551 |
Jan 1995 |
JP |
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Parent Case Info
This application is a Divisional application of Ser. No. 09/245,743, filed Feb. 8, 1999, now U.S. Pat. No. 6,300,237, which is a Divisional application of Ser. No. 08/584,065, filed Jan. 11, 1996, now U.S. Pat. No. 5,904,556.
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Non-Patent Literature Citations (2)
Entry |
An Advanced Multilevel Interconnection Technology For 0.35 Micron High Performance Devices (1994) pp. 36-43. |
Talieh, et al., Novel Method for Aluminum Planarization for Submicron High Aspect Ratio Contacts, Jun. 8, 1993 VMIC conference, pp. 211-213. |