Claims
- 1. An integrated circuit device comprising:
a chip carrier with an integrated circuit die fixably attached to said chip carrier; and an antenna structure molded onto said chip carrier and comprising a conductive loaded, resin-based material comprising conductive materials in a base resin host.
- 2. The device according to claim 1 wherein the ratio, by weight, of said conductive materials to said resin host is between about 0.20 and about 0.40.
- 3. The device according to claim 1 wherein said conductive materials comprise metal powder.
- 4. The device according to claim 3 wherein said metal powder is nickel, copper, or silver.
- 5. The device according to claim 3 wherein said metal powder is a non-conductive material with a metal plating.
- 6. The device according to claim 5 wherein said metal plating is nickel, copper, silver, or alloys thereof.
- 7. The device according to claim 3 wherein said metal powder comprises a diameter of between about 3 μm and about 12 μm.
- 8. The device according to claim 1 wherein said conductive materials comprise non-metal powder.
- 9. The device according to claim 8 wherein said non-metal powder is carbon, graphite, or an amine-based material.
- 10. The device according to claim 1 wherein said conductive materials comprise a combination of metal powder and non-metal powder.
- 11. The device according to claim 1 wherein said conductive materials comprise micron conductive fiber.
- 12. The device according to claim 11 wherein said micron conductive fiber is nickel plated carbon fiber, stainless steel fiber, copper fiber, silver fiber or combinations thereof.
- 13. The device according to claim 11 wherein said micron conductive fiber has a diameter of between about 3 μm and about 12 μm and a length of between about 2 mm and about 14 mm.
- 14. The device according to claim 1 wherein said conductive materials comprise a combination of conductive powder and conductive fiber.
- 15. The device according to claim 1 wherein said antenna structure is electrically connected to said integrated circuit die.
- 16. The device according to claim 15 wherein said electrical connection is by direct contact between said conductive loaded resin-based material and metal interconnects on a substrate within said chip carrier.
- 17. The device according to claim 15 wherein said electrical connection is by direct contact between said conductive loaded resin-based material and external leads of said chip carrier.
- 18. The device according to claim 15 further comprising an encapsulating layer between said integrated circuit die and said antenna structure.
- 19. The device according to claim 15 wherein said electrically contacting is through an opening in said encapsulating layer.
- 20. An integrated circuit device comprising:
a chip carrier with an integrated circuit die fixably attached to said chip carrier; and an EMI shield on said chip carrier and comprising a conductive loaded, resin-based material comprising conductive materials in a base resin host.
- 21. The device according to claim 20 wherein the ratio, by weight, of said conductive materials to said resin host is between about 0.20 and about 0.40.
- 22. The device according to claim 20 wherein said conductive materials comprise metal powder.
- 23. The device according to claim 22 wherein said metal powder is nickel, copper, or silver.
- 24. The device according to claim 20 wherein said metal powder is a non-conductive material with a metal plating.
- 25. The device according to claim 24 wherein said metal plating is nickel, copper, silver, or alloys thereof.
- 26. The device according to claim 23 wherein said metal powder comprises a diameter of between about 3 μm and about 12 μm.
- 27. The device according to claim 20 wherein said conductive materials comprise non-metal powder.
- 28. The device according to claim 27 wherein said non-metal powder is carbon, graphite, or an amine-based material.
- 29. The device according to claim 20 wherein said conductive materials comprise a combination of metal powder and non-metal powder.
- 30. The device according to claim 20 wherein said conductive materials comprise micron conductive fiber.
- 31. The device according to claim 30 wherein said micron conductive fiber is nickel plated carbon fiber, stainless steel fiber, copper fiber, silver fiber or combinations thereof.
- 32. The device according to claim 30 wherein said micron conductive fiber has a diameter of between about 3 μm and about 12 μm and a length of between about 2 mm and about 14 mm.
- 33. The device according to claim 20 wherein said conductive materials comprise a combination of conductive powder and conductive fiber.
- 34. The device according to claim 20 wherein said EMI shield is electrically connected to said integrated circuit die.
- 35. The device according to claim 34 wherein said electrical connection is by direct contact between said conductive loaded resin-based material and metal interconnects on a substrate in said chip carrier.
- 36. The device according to claim 34 wherein said electrical connection is by direct contact between said conductive loaded resin-based material and external leads of said chip carrier.
- 37. The device according to claim 34 further comprising an encapsulating layer between said integrated circuit die and said antenna structure.
- 38. The device according to claim 34 wherein said electrically contacting is through an opening in said encapsulating layer.
- 39. The device according to claim 20 further comprising a conductive wire molded into said EMI shield.
- 40. The device according to claim 20 wherein said EMI shield is molded onto said chip carrier.
- 41. The device according to claim 20 wherein said EMI shield further comprises a solderable layer of metal.
- 42. An integrated circuit device comprising:
a chip carrier with an integrated circuit die fixably attached to said chip carrier; and a heat sink on said chip carrier and comprising a conductive loaded, resin-based material comprising conductive materials in a base resin host.
- 43. The device according to claim 42 wherein the ratio, by weight, of said conductive materials to said resin host is between about 0.20 and about 0.40.
- 44. The device according to claim 42 wherein said conductive materials comprise metal powder.
- 45. The device according to claim 44 wherein said metal powder is nickel, copper, or silver.
- 46. The device according to claim 44 wherein said metal powder is a non-conductive material with a metal plating.
- 47. The device according to claim 46 wherein said metal plating is nickel, copper, silver, or alloys thereof.
- 48. The device according to claim 44 wherein said metal powder comprises a diameter of between about 3 μm and about 12 μm.
- 49. The device according to claim 42 wherein said conductive materials comprise non-metal powder.
- 50. The device according to claim 49 wherein said non-metal powder is carbon, graphite, or an amine-based material.
- 51. The device according to claim 42 wherein said conductive materials comprise a combination of metal powder and non-metal powder.
- 52. The device according to claim 42 wherein said conductive materials comprise micron conductive fiber.
- 53. The device according to claim 52 wherein said micron conductive fiber is nickel plated carbon fiber, stainless steel fiber, copper fiber, silver fiber or combinations thereof.
- 54. The device according to claim 52 wherein said micron conductive fiber has a diameter of between about 3 μm and about 12 μm and a length of between about 2 mm and about 14 mm.
- 55. The device according to claim 42 wherein said conductive materials comprise a combination of conductive powder and conductive fiber.
- 56. The device according to claim 42 wherein said heat sink is molded onto said chip carrier.
- 57. The device according to claim 42 further comprising a conductive wire molded into said heat sink.
- 58. The device according to claim 42 wherein heat sink further comprises fins or pins to increase surface area.
- 59. The device according to claim 42 wherein said heat sink is connected to a ground signal to form a simultaneous EMI shielding function.
- 60. The device according to claim 42 wherein said heat sink is bonded onto said chip carrier with an adhesive.
- 61. The device according to claim 42 wherein said heat sink is bonded onto said chip carrier by ultrasonic welding.
- 62. A method to form an integrated circuit device, said method comprising:
providing a chip carrier with an integrated circuit die fixably attached to said chip carrier; providing a conductive loaded, resin-based material comprising conductive materials in a resin-based host; and molding said conductive loaded, resin-based material to form an integrated antenna, heat sink, or EMI shield on said chip carrier.
- 63. The method according to claim 62 wherein the ratio, by weight, of said conductive materials to said resin host is between about 0.20 and about 0.40.
- 64. The method according to claim 62 wherein the conductive materials comprise a conductive powder.
- 65. The method according to claim 62 wherein said conductive materials comprise a micron conductive fiber.
- 66. The method according to claim 62 wherein said conductive materials comprise a combination of conductive powder and conductive fiber.
- 67. The method according to claim 62 wherein said molding comprises:
placing said chip carrier into a mold; injecting said conductive loaded, resin-based material into a mold; curing said conductive loaded, resin-based material; and removing said chip carrier with said integrated antenna, heat sink, or shield from said mold.
- 68. The method according to claim 62 further comprising forming an encapsulating layer between said chip carrier and said integrated antenna, heat sink, or shield.
- 69. The method according to claim 62 wherein said molding comprises:
loading said conductive loaded, resin-based material into a chamber; extruding said conductive loaded, resin-based material out of said chamber through a shaping outlet; and curing said conductive loaded, resin-based material to form said integrated antenna, heat sink, or EMI shield.
- 70. The method according to claim 69 further comprising attaching said antenna, heat sink, or EMI shield to said chip carrier.
- 71. The method according to claim 70 wherein said step of attaching is by an adhesive.
- 72. The method according to claim 70 wherein said step of attaching is by an ultrasonic welding.
Parent Case Info
[0001] This Patent Application claims priority to the U.S. Provisional Patent Application 60/462,062, filed on Apr. 15, 2003, to the U.S. Provisional Patent Application 60/478,753, filed on Jun. 16, 2003, to the U.S. Provisional Patent Application 60/509,791, filed on Oct. 9, 2003, to the U.S. Provisional Patent Application 60/519,020, filed on Nov. 10, 2003, to the U.S. Provisional Patent Application 60/512,352, filed on Oct. 17, 2003, and to the U.S. Provisional Patent Application 60/519,673, filed on Nov. 13, 2003, which are herein incorporated by reference in their entirety.
[0002] This Patent Application is a Continuation-in-Part of INT01-002CIP, filed as U.S. patent application Ser. No. 10/309,429, filed on Dec. 4, 2002, also incorporated by reference in its entirety, which is a Continuation-in-Part application of docket number INT01-002, filed as U.S. patent application Ser. No. 10/075,778, filed on Feb. 14, 2002, which claimed priority to US Provisional Patent Applications serial No. 60/317,808, filed on Sep. 7, 2001, serial No. 60/269,414, filed on Feb. 16, 2001, and serial No. 60/317,808, filed on Feb. 15, 2001.
Provisional Applications (8)
|
Number |
Date |
Country |
|
60462062 |
Apr 2003 |
US |
|
60478753 |
Jun 2003 |
US |
|
60509791 |
Oct 2003 |
US |
|
60519020 |
Nov 2003 |
US |
|
60512352 |
Oct 2003 |
US |
|
60519673 |
Nov 2003 |
US |
|
60269414 |
Feb 2001 |
US |
|
60317808 |
Sep 2001 |
US |
Continuation in Parts (2)
|
Number |
Date |
Country |
Parent |
10309429 |
Dec 2002 |
US |
Child |
10823099 |
Apr 2004 |
US |
Parent |
10075778 |
Feb 2002 |
US |
Child |
10309429 |
Dec 2002 |
US |