The present invention relates to a low-k chip packaging structure, and belongs to the technical field of chip packaging.
In the semiconductor manufacturing industry, the Moore's Law was always the power that pushed the industry to develop continuously, and Intel made great contributions in that aspect. The line width nodes of chips have mainly underwent the following several stages: 0.18 μm stage—the initial stage of semiconductor process technology, in which MOS tubes became popularized and chips were manufactured in relatively large sizes; 0.13 μm stage—in that stage, people were faith confident in semiconductor process technology and hoped to reduce chip area and cost by decreasing the feature size; those two stages were usually referred to as micrometer process technology stages. With the developed of nanometer technology, people's vision was no longer hunted to micrometer technology but turned to nano-scale semiconductor process technology. 90 nm process technology emerged first, and as the quantity of tube cores on unit area increased exponentially following the Moore's Law, 65 nm, 45 nm, 32 nm, and current 22 nm process technology emerged successively. However, the sharp reduction of feature size led to a pursuit for low dielectric loss constant (usually referred to as Low-k) of dielectric materials, for the purpose of reducing parasitic resistance, capacitance and inductance in circuits while ensuring favorable insulating performance of the circuits. Porous materials are usually selected as low-k materials, as a result, the low-k materials are relatively brittle and may be easily fractured under external stress, causing line failures.
Owing to the brittleness of low-k materials, the chip packaging process and the chip structure have to be improved appropriately to adapt to the requirement for product application. Up to now, the packaging of low-k products still employs conventional flip-chip bonding or wire bonding, which results in severe loss of packaging yield. The result of failure analysis indicates that the failure is mainly resulted from fracture of the dielectric layer under bonding electrodes (wire bonding and flip-chip bonding). At present, the general solution is to replace wire bonding packaging with flip-chip bonding packaging, and mange non-flow underfill on the substrate before flip-chip bonding. The packaging structure is shown in
In summary, there are mainly two drawbacks in the low-k chip packaging process at present:
To overcome the above-mentioned drawbacks, the present invention provides a low-k chip packaging structure and a method for low-k chip packaging, which can prevent low-k chip failures resulted from stress concentration in the chip packaging process and provide a low-cost packaging solution for low-k chips.
The objects of the present invention are attained as follows: a low-V chip packaging .structure comprising a chip body I. chip electrodes, and a chip. surface passivation layer, wherein, the chip body I is Wrapped With a film layer I, a supporting wafer is arranged on the back of the film layer I, the chip electrodes are led via metal redistribution wires to the film layer I in the peripheral area. around the chip, metal posts are arranged at the terminals of the metal redistribution wires, and the metal posts are wrapped with a film layer II, and the top of the metal posts is exposed out of the film layer II; a metal layer, with a solder bump on it, is arranged on the exposed top of each metal post.
The metal posts are made of electrical-conductive metals such as copper or nickel, etc . . . and the metal posts are in height within the range of 50 μm-100 μm.
The metal layer consists of a plurality of metal, and has a Ni/Au or Ni/Pd/Au structure, and the thickness of the metal layer is not greater than 5 μm.
A chip body II is embedded in the film layer I.
The metal redistribution wires are formed by metal wiring layer I and metal wiring layer II.
Both the film layer I and the film layer II are made of a non-photo-sensitive materials.
The supporting wafer is a silicon wafer or a metal wafer.
The bearer wafer adopts a silicon substrate or a glass substrate.
Compared to the prior art, the present invention has the following advantages:
2. The chip electrodes are extended to the non-chip area by wire redistribution through a wafer-level process; therefore, the stress generated in attachment process of BGA structure is transferred, then the chip area is no longer in stressed state:
3. Metal post technique and structure are utilized to implement high power current carrying and uniform current distribution; in addition, the height of the copper posts is utilized to buffer the stress from BGA bumps, so that the stress will not be transferred to the redistribution layer;
4. With wafer-level packaging technique and metal post technique, the packaging cost can be reduced while the low-k chips are packed with high
5. The existing encapsulation technique in the prior art is replaced with a film attachment technique; therefore, the requirement for equipment in the packaging process is decreased;
6. Bumping technique, flip-chip technique and substrate technique are integrated to implement a BGA packaged wafer manufacturing process.
As shown in
As shown in
As shown in
The implementation procedures of the low-k chip packaging structure provided in the present invention are as follows;
Step 1: taking a low-k wafer and cutting it into individual chips.
Step 2: funning aligning marks by photo-lithography on a bearer wafer to complete the pattern layout on the bearer wafer;
The bearer wafer can be a silicon substrate or a glass substrate. Aligning marks are formed on the bearer wafer to facilitate the follow-up flip-chip mounting process and keep the chips at ideal positions.
Step 3: attaching a temporary strippable film to the bearer wafer and flip-chip mounting the chips obtained in step 1 one by one to the bearer wafer attached with the temporary strippable film.
The temporary strippable film is adhesive on both sides, and can bond well with both the bearer wafer and the subsequently flip-chip mounted chips. The strippable film is thermally strippable or UV strippable. If the strippable film is UV strippable, a bearer wafer should be glass substrate or quartz substrate since LW irradiation is required for UV stripping. Accordingly, the substrate must be transparent for UV transmission,
Flip-chip mounting is selected for two purposes: one is to ensure chips different in thickness can be mounted with the face side in the same plane in the subsequent process, the other is to prevent glue coverage on the face side of the chips on the restructured wafer; so as to facilitate subsequent processing.
step 4: attaching a film layer I 2-4 to the bearer wafer for encapsulation after flip-chip mounting of the chips, bonding a supporting wafer 2-5 to the film, layer I 2-4 in the encapsulation process, and curing the film layer I 2-4, then forming a restructured wafer composed of the chips, film layer I 2-4 and supporting wafer 2-5.
The supporting wafer 2-5 is a silicon wafer or a metal wafer, and the wafer surface is kept smooth in the encapsulation process because the film layer I 2-4 has good fluidity under heating.
Step 5: shipping the restructured wafer from the bearer wafer by UV irradiation or thermal stripping and cleaning the surface of the chips on the restructured wafer to expose the chip electrodes 2-2.
Step 6: forming single-layer or multi-layer metal redistribution wires 2-6 on the surface of the film layer I 2-4 and the chips by wafer-level photo-lithography, sputtering, or electroplating, so as to lead the chip electrodes 2-2 to the peripheral area of the chips (the area without chip) via metal redistribution wires 2-6.
Step 7: forming metal posts 2-7 at the terminals of metal redistribution wires 2-6 by photo-lithography or electroplating,
The metal posts 2-7 are made of an electrical-conductive metal material such as copper or nickel, etc.; the height of the metal posts 2-7 can be adjusted according to the requirements of the structure and shall not be smaller than 50 μm, generally, the height of the metal posts 2-7 is within the range of 50 μm-100 μm. Here, the metal posts 2-7 have two functions: one function is to reduce crowding effect of electric current, i.e., with the metal posts, the electric current can be distributed uniformly and thereby the phenomenon of electric. migration can be reduced: the other .function is to utilize the height of the metal posts 2-7 to buffer the stress from the bumps 2-10 and thereby protect the low-k chips.
Step 8: attaching as film layer II 2-8 to the surface of the restructured wafer with the metal posts 2-7 for encapsulation curing the package, and then removing the film material on the top of the metal posts by laser ablation, to form complete Or partial openings on the metal posts 2-7 and expose the top of the metal posts 2-7 out of the film layer II 2-8.
The film layer I 2-4 and film layer II 2-8 are made of non-photo-sensitive insulating resin materials.
Step 9: coating a metal layer 2-9 on the top of the metal posts 2-7 exposed out of the film layer II 2-8.
The metal layer 2-9 adopts single layer metal or multilayer metal. The multilayer metal usually has a Ni/Au or Ni/Pd/Au structure. The thickness of the metal layer 2-9 should not be greater than 5 μm. The metal layer 2-9 is used to prevent inter-diffusion between stannum and copper in the soldering flux and improve product reliability.
Step 10: forming BGA solder bumps 2-10 on the metal layer 2-9 by printing or bumping and finally cutting the restructured wafer with BGA solder bumps into individual BGA packages.
Number | Date | Country | Kind |
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201110200212.0 | Jul 2011 | CN | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/CN2011/081113 | 10/21/2011 | WO | 00 | 2/21/2014 |