Claims
- 1. A method of manufacturing a semiconductor device, comprising the steps of:(a) providing a frame body comprised of metal, the frame body having an opening, a film base material arranged in the opening and fixed to the frame body, the film base material having a resin sealing area, a peripheral area and a plurality of electrodes formed on the resin sealing area, wherein the peripheral area is interposed between the resin sealing area and the frame body; (b) providing a semiconductor chip having a main surface, a rear surface and a plurality of electrodes formed on the main surface; (c) fixing the rear surface of the semiconductor chip on the resin sealing area; (d) electrically connecting the plurality of electrodes of the semiconductor chip with the plurality of electrodes of the film base material via a plurality of wires; (e) forming a first resin sealing body on the resin sealing area, wherein the first resin sealing body seals the semiconductor chip, the plurality of wires and the plurality of electrodes of the film base material, the first resin sealing body being formed to have a space between the periphery of the first resin sealing body and the frame body; and (f) dividing the film base material at the resin sealing area from the film base material at the peripheral area.
- 2. A method of manufacturing a semiconductor device according to claim 1, wherein, in the step (e), further forming a second resin sealing body on the peripheral area.
- 3. A method of manufacturing a semiconductor device according to claim 2, wherein the second resin sealing body is interposed between the first resin sealing body and the frame body.
- 4. A method of manufacturing a semiconductor device according to claim 2, further comprising a step of dividing the second resin sealing body from the first resin sealing body.
- 5. A method of manufacturing a semiconductor device according to claim 1, wherein the film base material is comprised of insulation resin.
- 6. A method of manufacturing a semiconductor device according to claim 1, wherein the film base material is comprised of flexible film.
Priority Claims (1)
Number |
Date |
Country |
Kind |
9-204534 |
Jul 1997 |
JP |
|
Parent Case Info
This application is a Continuation of application Ser. No. 09/594,046, filed Jun. 15, 2000, now U.S. Pat. No. 6,448,111 which is a Divisional of application Ser. No. 09/126,438, filed Jul. 30, 1998, now U.S. Pat. No. 6,232,650, issued May 15, 2001, the entire disclosure of No. 09/126,438 being incorporated herein by reference.
US Referenced Citations (10)
Foreign Referenced Citations (2)
Number |
Date |
Country |
0702404 |
Sep 1995 |
EP |
0694965 |
Jan 1996 |
FR |
Non-Patent Literature Citations (1)
Entry |
“Various Types of BGA Packages that Seal 100-MHz LSIs”, Nikkei Electronics, Feb. 28, 1994. |
Continuations (1)
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Number |
Date |
Country |
Parent |
09/594046 |
Jun 2000 |
US |
Child |
10/214313 |
|
US |