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Information
Patent Grant
3390012
References
Source
Patent Number
3,390,012
Date Filed
Not available
Date Issued
Tuesday, June 25, 1968
56 years ago
CPC
H05K3/105 - by conversion of non-conductive material on or in the support into conductive material
H01B1/00 - Conductors or conductive bodies characterised by the conductive materials Selection of materials as conductors
H01B3/004 - with conductive additives or conductive layers
H01C7/001 - Mass resistors
H01C17/06 - adapted for coating resistive material on a base
H01F1/00 - Magnets or magnetic bodies characterised by the magnetic materials therefor Selection of materials for their magnetic properties
H01F1/0311 - Compounds
H01F1/0313 - Oxidic compounds
H01F1/346 - [(TO4) 3] with T= Si, Al, Fe, Ga
H01F41/34 - in patterns
H01G4/12 - Ceramic dielectrics
H01G4/1209 - characterised by the ceramic dielectric material
H01G13/06 - with provision of removing metal surfaces
H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L21/4846 - Leads on or in insulating or insulated substrates
H01L21/56 - Encapsulations
H01L23/291 - Oxides or nitrides or carbides
H01L23/522 - including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
H01L23/5227 - Inductive arrangements or effects of, or between, wiring layers
H01L23/5384 - Conductive vias through the substrate with or without pins
H01L24/81 - using a bump connector
H01L27/00 - Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate
H01L49/02 - Thin-film or thick-film devices
H01L2224/81801 - Soldering or alloying
H01L2924/01005 - Boron [B]
H01L2924/01006 - Carbon [C]
H01L2924/01012 - Magnesium [Mg]
H01L2924/01013 - Aluminum [Al]
H01L2924/01019 - Potassium [K]
H01L2924/0102 - Calcium [Ca]
H01L2924/01021 - Scandium [Sc]
H01L2924/01023 - Vanadium [V]
H01L2924/01024 - Chromium [Cr]
H01L2924/01025 - Manganese [Mn]
H01L2924/01029 - Copper [Cu]
H01L2924/0103 - Zinc [Zn]
H01L2924/01032 - Germanium [Ge]
H01L2924/01033 - Arsenic [As]
H01L2924/01042 - Molybdenum [Mo]
H01L2924/01044 - Ruthenium [Ru]
H01L2924/01047 - Silver [Ag]
H01L2924/01049 - Indium [In]
H01L2924/01051 - Antimony [Sb]
H01L2924/01052 - Tellurium [Te]
H01L2924/01056 - Barium [Ba]
H01L2924/01057 - Lanthanum [La]
H01L2924/01058 - Cerium [Ce]
H01L2924/01068 - Erbium [Er]
H01L2924/01074 - Tungsten [W]
H01L2924/01075 - Rhenium [Re]
H01L2924/01079 - Gold [Au]
H01L2924/01082 - Lead [Pb]
H01L2924/01084 - Polonium [Po]
H01L2924/01088 - Radium [Ra]
H01L2924/01322 - Eutectic Alloys
H01L2924/014 - Solder alloys
H01L2924/09701 - Low temperature co-fired ceramic [LTCC]
H01L2924/10253 - Silicon [Si]
H01L2924/12042 - LASER
H01L2924/14 - Integrated circuits
H01L2924/19041 - being a capacitor
H01L2924/19042 - being an inductor
H01L2924/19043 - being a resistor
H01L2924/30105 - Capacitance
H01L2924/30107 - Inductance
H01L2924/3025 - Electromagnetic shielding
H05K2203/092 - Particle beam
H05K2203/107 - Using laser light
H05K2203/1105 - Heating or thermal processing not related to soldering, firing, curing or laminating
H05K2203/125 - Inorganic compounds
Y10S148/026 - Deposition thru hole in mask
Y10S148/051 - Etching
Y10S148/071 - Heating, selective
Y10S148/085 - Isolated-integrated
Y10S148/106 - Masks, special
Y10S148/15 - Silicon on sapphire SOS
Y10S428/90 - Magnetic feature
Y10S430/143 - Electron beam
Y10T29/435 - Solid dielectric type
US Classifications
430 - Radiation imagery chemistry: process, composition, or product thereof
029 - Metal working
148 - Metal treatment
174 - Electricity: conductors and insulators
200 - Electricity: circuit makers and breakers
228 - Metal fusion bonding
257 - Active solid-state devices
338 - Electrical resistors
361 - Electricity: electrical systems and devices
427 - Coating processes
428 - Stock material or miscellaneous articles
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