Patent Application
20230084360
The disclosure relates to an electronic device and a manufacturing method thereof, and in particular, relates to an electronic device capable of providing improved reliability or relates to an electronic device and a manufacturing method thereof suitable for high frequency or radio signal transmission.
Electronic devices or splicing electronic devices have been widely applied in different fields such as communication, display, vehicle, or aviation. With the vigorous advancement of electronic devices, the development of the electronic devices moves towards thinness and lightness. Therefore, the requirements for reliability and quality of the electronic devices continue to grow.
The disclosure provides an electronic device and a manufacturing method thereof capable of providing improved reliability of the electronic device or suitable for high frequency or radio signal transmission.
According to an embodiment of the disclosure, an electronic device includes a substrate, a bump, a chip, and an adhesive layer. The substrate includes a first connection pad. The bump is disposed on the first connection pad. The chip includes a second connection pad. The bump is disposed between the first connection pad and the second connection pad. The adhesive layer is disposed between the substrate and the chip. A dissipation factor of the adhesive layer is less than or equal to 0.01 at a frequency of 10 GHz.
According to an embodiment of the disclosure, a manufacturing method of an electronic device includes the following steps. A substrate is provided. The substrate includes a first connection pad. An adhesive layer is applied on the substrate. The adhesive layer is patterned, such that the adhesive layer produces an opening exposing the first connection pad. A bump is formed on the first connection pad. A chip is provided. The chip includes a second connection pad. The chip is bonded onto the bump through the second connection pad.
The accompanying drawings are included to provide a further understanding of the disclosure, and the accompanying drawings are incorporated in and constitute a part of this specification. The drawings illustrate the embodiments of the disclosure, and together with the description, serve to explain the principle of the disclosure.
The accompanying drawings are included together with the detailed description provided below to provide a further understanding of the disclosure. Note that in order to make the drawings to be more comprehensible to readers and for the sake of clarity of the drawings, only part of the electronic device is depicted in the drawings of the disclosure, and specific elements in the drawings are not depicted according to actual scales. In addition, the numbers and sizes of the elements in each drawing are provided for illustration only and are not used to limit the scope of the disclosure.
In the following specification and claims, the words “containing” and “including” are open-ended words and therefore should be interpreted as “containing but not limited to . . . ”.
It should be understood that when an element or a film layer is referred to as being “on” or “connected to” another element or film layer, it can be directly on the another element or film layer or be directly connected to the another element or film layer, or an inserted element or film layer may be provided therebetween (not a direct connection). In contrast, when the element is referred to as being “directly on” another element or film layer or “directly connected to” another element or film layer, an inserted element or film layer is not provided therebetween.
Although the terms “first”, “second”, “third” . . . may be used to describe various constituent elements, the constituent elements are not limited to these terms. These terms are only used to distinguish a single constituent element from other constituent elements in the specification. The same terms may not be used in the claims, and the elements in the claims may be replaced with first, second, third . . . according to the order declared by the elements in the claims. Therefore, in the following description, the first constituent element may be the second constituent element in the claims.
In the text, the terms “about”, “approximately”, “substantially”, and “roughly” usually mean within 10%, 5%, 3%, 2%, 1%, or 0.5% of a given value or range. The number given here is an approximate number, that is, the meanings of “about”, “approximately”, “substantially”, and “roughly” may still be implied without specifying “about”, “approximately”, “substantially”, and “roughly”.
In some embodiments of the disclosure, regarding the words such as “connected”, “interconnected”, etc. referring to bonding and connection, unless specifically defined, these words mean that two structures are in direct contact or two structures are not in direct contact, and other structures are provided to be disposed between the two structures. The word for joining and connecting may also include the case where both structures are movable or both structures are fixed. In addition, the word “coupled” may include any direct or indirect electrical connection means.
In some embodiments of the disclosure, an optical microscopy (OM), a scanning electron microscope (SEM), a film thickness profile measuring instrument (α-step), an elliptical thickness measuring instrument, or other suitable methods may be adopted to measure the area, width, thickness, or height of each element or to measure the distance or spacing between elements. In detail, according to some embodiments, the scanning electron microscope may be used to obtain a cross-sectional structural image of an element to be measured, and to measure the area, width, thickness, or height of each element, or the distance or spacing between elements. In some embodiments of the disclosure, the resonator cavity method may be used to perform material measurement to obtain a dissipation factor Df and a dielectric constant Dk of the material, so as to understand the material properties.
The electronic device of the disclosure may include but not limited to a display device, a backlight device, an antenna device, a sensing device, or a splicing device. The electronic device may be a bendable or flexible electronic device. The display device may be a non-self-luminous display device or a self-luminous display device. The antenna device may be a liquid crystal antenna device or a non-liquid crystal antenna device, and the sensing device may be a sensing device that senses capacitance, light, heat, or ultrasound, but it is not limited thereto. The electronic element in the electronic device may include a passive element and an active element, such as a capacitor, a resistor, an inductor, a diode, a transistor, etc. The diode may include a light emitting diode (LED) or a photodiode. The light emitting diode may include but not limited to an organic LED (OLED), a sub-millimeter LED (mini LED), a micro LED, or a quantum dot LED. The splicing device may be, for example, a display splicing device or an antenna splicing device, but it is not limited thereto. Note that the electronic device may be any combination of the foregoing, but it is not limited thereto. Hereinafter, the disclosure is described with an electronic device.
It should be understood that in the following embodiments, the features of several different embodiments may be replaced, recombined, and mixed to complete other embodiments without departing from the spirit of the disclosure. As long as the features of the embodiments do not violate or do not conflict with the spirit of the disclosure, they may be mixed and matched arbitrarily.
Descriptions of the disclosure are given with reference to the exemplary embodiments illustrated by the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.
A manufacturing method of the electronic device 100 provided by this embodiment is described below, and the manufacturing method of the electronic device 100 may include but not limited to the following steps.
First, with reference to
Next, with reference to
In this embodiment, since the dielectric constant (Dk) of the adhesive layer 140 can be, for example, less than or equal to 3.8 (i.e., Dk<3.8 or Dk=3.8) at a frequency of 10 GHz, the electronic device 100 is suitable for high frequency or radio signal transmission, but it is not limited thereto. In some embodiments, the dielectric constant of the adhesive layer can also be less than or equal to 3.5 at a frequency of 10 GHz.
Next, with reference to
Next, with reference to
Next, with reference to
Next, after the reflow process is performed, a pressing process or a vacuuming process is performed to increase the bonding strength between the chip 130 and the substrate 110. In this embodiment, the adhesive layer 140 is located between the chip 130 and the substrate 110. Therefore, by adhering the chip 130 and the substrate 110 together by the adhesive layer 140, the bonding strength and stability between the chip 130 and the substrate 110 may be increased, two lateral sides 120a of the bump 120 may be surrounded by the adhesive layer 140, so that the contact between the bump 120 and water and oxygen is reduced, and the reliability of the electronic device 100 is thereby improved.
In this embodiment, compared to a general underfill, since the size of the adhesive layer 140 may be precisely controlled through a patterning method, it is easier to achieve a fine pitch. Besides, compared to a general underfill, since the thickness of the adhesive layer 140 features better uniformity, the distance between the chip 130 and the substrate 110 exhibits better uniformity as well, such that the tiling of the chip 130 may be improved or the variation of the tilt angle may be reduced.
In this embodiment, the chip 130 may be fabricated from, for example, a silicon wafer, an III-V compound (e.g., gallium arsenide (GaAs), gallium nitride (GaN), silicon carbide (SiC)), sapphire, or a glass wafer, but it is not limited thereto. The chip 130 can also be, for example, a semiconductor package element, including but not limited to a ball grid array (BGA) package, a chip scale package (CSP), and a 2.5D/3D package, but it is not limited thereto. The chip 130 may include but not limited to, for example, an integrated circuit (IC), a transistor, a silicon controlled rectifier (SCR), a valve, a thin film transistor, a capacitor, an inductor, a variable capacitor, a filter, a resistor, a diode, a light emitting diode, a microelectromechanical system (MEMS), a liquid crystal chip, a connector, an interposer, a redistribution layer, or the like. Manufacturing of the electronic device 100 of this embodiment is substantially completed so far.
Other embodiments are described for illustration in the following. It should be noted that the reference numerals and a part of the contents in the previous embodiment are used in the following embodiments, in which identical reference numerals indicate identical or similar components, and repeated description of the same technical contents is omitted. Please refer to the description of the previous embodiments for the omitted content, which will not be repeated hereinafter.
To be specific, with reference to
Next, with reference to
In addition, in this embodiment, a cavity C1 is provided between two adjacent bumps 120. Herein, the cavity C1 may be surrounded and defined by two adjacent bumps 120, the chip 130, and the substrate 110. Manufacturing of the electronic device 100a of this embodiment is substantially completed so far.
To be specific, with reference to
In this embodiment, when a distance D between the chip 130 and the substrate 110 is A, a height H of the spacer 144 may be 0.8 to 1.2 times A (i.e., 0.8×A≤H≤1.2×A), and a thickness T of the adhesive layer 140b may be 1 to 1.2 times A (i.e., 1×A≤T≤1.2×A), but it is not limited thereto. Herein, the distance D is, for example, the minimum distance measured in the normal direction Y of the substrate 110 between the chip 130 and the substrate 110. The height H is, for example, the minimum height measured in the normal direction Y of the substrate 110 when the spacer 144 is not pressed. In some embodiments, after the spacer 144 is pressed by the chip 130 and the substrate 110, the height H of the spacer 144 may be approximately equal to, for example, the distance D between the chip 130 and the substrate 110. The thickness T is, for example, the minimum thickness measured in the normal direction Y of the substrate 110 when the adhesive layer 140b is not pressed. In some embodiments, after the adhesive layer 140 is pressed by the chip 130 and the substrate 110, the thickness T of the adhesive layer 140b may be approximately equal to, for example, the distance D between the chip 130 and the substrate 110.
To be specific, with reference to
The electronic element 170 may be, for example, a transistor and is disposed in the redistribution layer 160. In some embodiments, the electronic element may also be a valve, a thin film transistor, a capacitor, an inductor, or a filter (not shown).
The driver element 180 may be attached to the edge of the substrate 110, and the driver element 180 may be electrically connected to the electronic element 170 through the redistribution layer 160. Herein, the driver element 180 may be, for example, an integrated circuit, a flexible printed circuit board (FPC), a printed circuit board (PCB), a chip on board (COB), or a chip on film (COF), but it is not limited thereto.
In this embodiment, the first connection pad 112 is disposed on the second circuit layer 163 of the redistribution layer 160, and the first connection pad 112 may be electrically connected to the redistribution layer 160.
In this embodiment, an adhesive layer 140c is disposed on the second circuit layer 163 of the redistribution layer 160 to cover the exposed circuit (e.g., the second circuit layer 163) and the electronic element 170. Therefore, in this embodiment, the adhesive layer 140c may act as a protective layer to surround the redistribution layer 160 and the electronic element 170, so that the contact between the redistribution layer 160 and the electronic element 170 between water, moisture, oxygen, and foreign matters is reduced, and the reliability of the electronic device 100c is thereby improved.
To be specific, with reference to
To be specific, with reference to
In this embodiment, a cavity C2 may be surrounded and defined by two adjacent bumps 120, the chip 130, and the substrate 110. The cavity C2 may expose the bump 120, the first connection pad 112, and the second connection pad 132. In the cavity C2, it can be air or vacuum.
In view of the foregoing, in the electronic device and the manufacturing method thereof provided by the disclosure, by arranging the adhesive layer between the substrate and the chip, the bonding strength and stability between the chip and the substrate may be increased. Since the two lateral sides of the bump may be surrounded by the adhesive layer, the contact between the bump and water and oxygen is reduced, and the reliability of the electronic device may thus be improved. In addition, in this embodiment, since the dissipation factor of the adhesive layer can be less than or equal to 0.01 at a frequency of 10 GHz, the electronic device is suitable for high frequency or radio signal transmission. In addition, in some embodiments, since the dielectric constant of the adhesive layer can be less than or equal to 3.8 at a frequency of 10 GHz, the electronic device is suitable for high frequency or radio signal transmission.
Finally, it is worth noting that the foregoing embodiments are merely described to illustrate the technical means of the disclosure and should not be construed as limitations of the disclosure. Even though the foregoing embodiments are referenced to provide detailed description of the disclosure, people having ordinary skill in the art should understand that various modifications and variations can be made to the technical means in the disclosed embodiments, or equivalent replacements may be made for part or all of the technical features; nevertheless, it is intended that the modifications, variations, and replacements shall not make the nature of the technical means to depart from the scope of the technical means of the embodiments of the disclosure.
| Number | Date | Country | Kind |
|---|---|---|---|
| 202210669529.7 | Jun 2022 | CN | national |
This application claims the priority benefit of U.S. provisional application Ser. No. 63/242,496, filed on Sep. 10, 2021 and China application serial no. 202210669529.7, filed on Jun. 14, 2022. The entirety of each of the above-mentioned patent applications is hereby incorporated by reference herein and made a part of this specification.
| Number | Date | Country | |
|---|---|---|---|
| 63242496 | Sep 2021 | US |
