Patent Grant
7157384
1. Field of the Invention
Embodiments of the present invention generally relate to the fabrication of integrated circuits. More specifically, embodiments of the present invention generally relate to processes for depositing barrier layers on a substrate and structures that include the barrier layers.
2. Description of the Related Art
Semiconductor device geometries have dramatically decreased in size since such devices were first introduced several decades ago. Since then, integrated circuits have generally followed the two year/half-size rule (often called Moore's Law), which means that the number of devices that will fit on a chip doubles every two years. Today's fabrication plants are routinely producing devices having sub-quarter micron feature sizes, and tomorrow's plants soon will be producing devices having even smaller geometries.
In order to further reduce the size of devices on integrated circuits, it has become necessary to use conductive materials having low resistivity, such as copper, and insulators having low k (dielectric constant <4.0) to reduce the capacitive coupling between adjacent metal lines.
A barrier layer is typically deposited between subsequently deposited conductive materials and low k dielectric material to prevent diffusion of byproducts such as moisture onto the conductive materials. For example, moisture that can be generated during formation of a low k insulator readily diffuses to the surface of the conductive metal and increases the resistivity of the conductive metal surface.
A barrier layer can also be used to prevent diffusion of conductive materials. Low k dielectric materials are often porous and susceptible to interlayer diffusion of conductive materials, such as copper, which can result in the formation of short-circuits and device failure. A barrier layer is typically used in copper damascene structures to reduce or prevent interlayer diffusion.
Attempts have been made to deposit silicon carbide barrier layers by plasma enhanced chemical vapor deposition. However, silicon carbide barrier layers typically have had undesirable characteristics, such as unacceptable current leakage, and film instability, such as upon exposure to air. Silicon carbide layers doped with oxygen or nitrogen have shown some improvements in the areas of current leakage, compressive stress, and film stability. However, the nitrogen in nitrogen-doped silicon carbide layers can poison photoresist layers deposited on a substrate. The gases used to incorporate oxygen in oxygen-doped silicon carbide layers can oxidize underlying metal features on which the oxygen-doped silicon carbide layer is deposited.
Therefore, there remains a need for methods of depositing silicon carbide and oxygen-doped silicon carbide barrier layers with good chemical and mechanical properties.
Aspects of the invention generally provide methods for depositing a silicon carbide glue layer on a substrate, wherein the glue layer has improved current leakage without doping with oxygen or nitrogen. In one aspect, the invention provides a method for processing a substrate, including reacting a gas mixture comprising a carbon and silicon-containing compound and a member selected from the group of hydrogen, argon, and an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, such as ethylene, in a plasma and depositing a silicon carbide glue layer on the substrate. The gas mixture may also include helium.
In another aspect of the invention, a method is provided for depositing a barrier bilayer on a substrate, including reacting a gas mixture comprising an organosilicon compound, and a member selected from the group of hydrogen, argon, and an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, such as ethylene, in a plasma and depositing a silicon carbide glue layer on the substrate, reacting a second gas mixture in a plasma, and depositing an oxygen-containing silicon carbide barrier layer on the silicon carbide glue layer. In one embodiment, the oxygen-containing silicon carbide barrier layer may be deposited from a gas mixture comprising an organosilicon compound and an oxygen-containing gas having the formula CxHyOz, with X being from 0 to 2, Y being from 0 to 2, and Z being from 1 to 3, wherein X+Y is at least 1 and X+Y+Z is 3 or less. In another embodiment, the oxygen-containing silicon carbide barrier layer may be deposited from a second gas mixture comprising an organosilicon compound and an oxygen-containing compound having the general formula
Optionally, the substrate may be pre-treated with a hydrogen plasma before the silicon carbide glue layer is deposited.
In another aspect of the invention, a method is provided for depositing a barrier bilayer on a substrate, including depositing a SiN or SiCN layer on the substrate, reacting a gas mixture in a plasma, and depositing an oxygen-containing silicon carbide barrier layer on the SiN or SiCN layer. The oxygen-containing silicon carbide barrier layer may be used as a cap layer on a SiN or SiCN layer. The oxygen-containing silicon carbide barrier layer may be deposited from a gas mixture comprising an organosilicon compound and an oxygen-containing gas having the formula CxHyOz, with X being from 0 to 2, Y being from 0 to 2, and Z being from 1 to 3, wherein X+Y is at least 1 and X+Y+Z is 3 or less. Optionally, the substrate may be pre-treated with a hydrogen plasma before the silicon carbide glue layer is deposited.
In yet another aspect, a method is provided for depositing a silicon carbide hard mask on a substrate, including reacting a gas mixture comprising an organosilicon compound and a member selected from the group of hydrogen, argon, and an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, such as ethylene, in a plasma and optionally depositing a second hard mask on the silicon carbide hard mask.
So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
Silicon Carbide Glue Layers
Aspects of the invention provide methods for depositing an oxygen-doped silicon carbide layer on a substrate. The oxygen-doped silicon carbide layer may be a layer that is underneath or below a photoresist layer on a substrate. The oxygen-doped silicon carbide layer may be a layer that is deposited on a silicon carbide glue layer, a SiN layer, or a SiCN layer.
Aspects of the invention provide methods for depositing a silicon carbide glue layer or a silicon carbide hard mask on a substrate. As defined herein, a “silicon carbide glue layer” or a “silicon carbide hard mask” is a silicon carbide layer having reduced current leakage in comparison to conventional silicon carbide layers that do not contain oxygen or nitrogen. The silicon carbide layers described herein have significant and unexpected improvements in current leakage.
The silicon carbide glue layer may serve as a complete barrier layer itself, or the silicon carbide glue layer may be part of a barrier bilayer that includes a barrier layer in addition to the silicon carbide glue layer. The silicon carbide glue layer may be deposited on the substrate from a gas mixture comprising an organosilicon compound. The organosilicon compound may have the formula SiHa(CH3)b(C2H5)c(C6H5)d, wherein a is 0 to 2, b is 0 to 4, c is 0 to 4. Alternatively, the organosilicon compound may have the general formula
Alternatively, the organosilicon compound may have the general formula
Preferably, the gas mixture does not include oxygen, nitrogen, or compounds with silicon-silicon bonds. Preferably, the gas mixture comprises trimethylsilane (TMS). The silicon carbide glue layer may be deposited on a surface of the substrate comprising part of a dielectric layer and part of a metal line disposed in the dielectric layer. The silicon carbide glue layers described herein are typically low k (k<4) layers.
In any of the embodiments or aspects described herein, the organosilicon compound used in the gas mixture to deposit the silicon carbide glue layer can be dimethylsilane, trimethylsilane, diethylsilane, diethylmethylsilane, disilanomethane, bis(methylsilano)methane, 1,2-disilanoethane, 1,2-bis(methylsilano)ethane, 2,2-disilanopropane, 1,3,5-trisilano-2,4,6-trimethylene, diphenylsilane, dimethylphenylsilane, diphenylmethylsilane, phenylmethylsilane, or combinations thereof.
In any of the embodiments or aspects described herein, a substrate upon which a silicon carbide glue layer described herein is deposited may be pre-treated with a hydrogen plasma. The pre-treatment with a hydrogen plasma may remove metal oxides, such as copper oxide, from the substrate surface. It was found that substrates including copper and pre-treated with a hydrogen plasma had a higher reflectivity than substrates including copper and pre-treated with an ammonia plasma. It is believed that the improved reflectivity is a result of removal of copper oxide from the substrate. The pre-treatment may be performed in the same chamber in which the silicon carbide glue layer is deposited. Hydrogen gas may be flowed into the chamber at a flow rate between about 300 sccm and about 1000 sccm. The substrate temperature may be between about 200° C. and about 400° C. The hydrogen gas may be reacted in the chamber at a pressure of between about 3 Torr and about 7 Torr. A RF power of between about 100 watts and about 600 watts may be applied in the chamber. The spacing between the gas distributor in the chamber and the substrate may be between about 200 mils and about 600 mils.
Methods of forming the silicon carbide glue layers described herein are preferably performed in a processing chamber adapted to deposit organosilican material while applying RF power. For example, a PRODUCER® chemical vapor deposition chamber, commercially available from Applied Materials, Inc., of Santa Clara, Calif. may be used. An example of a PRODUCER® Chamber is described in U.S. Pat. No. 5,555,681, which is incorporated by reference herein. A brief description of a PRODUCER® Chamber will be given with respect to
The flow rates described herein for introducing gases into a plasma processing chamber are given with respect to the total processing area in a PRODUCER® chamber, i.e., both processing regions. Thus, the flow rates into each processing region of the PRODUCER® chamber are approximately half of the flow rates described herein.
In one aspect, a silicon carbide glue layer may be deposited on a substrate by reacting a gas mixture comprising an organosilicon compound, and an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, such as ethylene, and optionally, helium, in a plasma provided in a plasma processing chamber. Preferably, the organosilicon compound is trimethylsilane, and the aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond is ethylene (C2H4). A silicon carbide glue layer may be deposited in one embodiment by introducing into a plasma processing chamber an organosilicon compound at a flow rate between about 50 and about 300 sccm, and an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, at a flow rate between about 50 and about 500 sccm, such as between about 100 and about 500 sccm, and optionally, helium at a flow rate between about 0 and about 1000 sccm. Preferably, helium is introduced into the chamber at a flow rate of less than about 400 sccm. The gas mixture may be reacted in a plasma processing chamber at a pressure of between about 2 Torr and about 10 Torr, such as between about 2 and about 5 Torr. The substrate temperature may be between about 200° C. and about 400° C., such as between about 300° C. and about 400° C. A RF power of between about 100 watts and about 700 watts, such as between about 300 watts and about 700 watts, or between about 100 watts and about 600 watts, may be applied in a plasma processing chamber for processing 300 mm substrates. A RF power of between about 100 watts and about 700 watts, such as between about 100 watts and about 600 watts, may be applied in a plasma processing chamber for processing 200 mm substrates. The RF power can be provided at a high frequency such as between about 13 and about 14 MHz, such as 13.56 MHz. The gas mixture may be introduced into the chamber by a gas distributor that may be positioned between about 300 mils and about 500 mils from the substrate surface.
In another aspect, a silicon carbide glue layer may be deposited on a substrate by reacting a gas mixture comprising an organosilicon compound and a gas selected from the group of hydrogen and argon in a plasma provided in a plasma processing chamber. Preferably, the organosilicon compound is trimethylsilane. In one embodiment, a silicon carbide glue layer may be deposited by introducing into a plasma processing chamber an organosilicon compound at a flow rate between about 50 and about 350 sccm and hydrogen at a flow rate between about 100 and about 500 sccm. The gas mixture may be reacted in a plasma processing chamber at a pressure of between about 3 Torr and about 12 Torr. The substrate temperature may be between about 200° C. and about 400° C. A RF power of between about 200 watts and about 700 watts, preferably between about 300 watts and about 700 watts, may be applied in a plasma processing chamber for processing 300 mm substrates. A RF power of between about 200 watts and about 700 watts may be applied in a plasma processing chamber for processing 200 mm substrates. The RF power can be provided at a high frequency such as between about 13 and about 14 MHz, such as 13.56 MHz. In another embodiment, a silicon carbide glue layer may be deposited by introducing into a plasma processing chamber an organosilicon compound at a flow rate between about 50 and about 350 sccm and argon at a flow rate between about 100 and about 500 sccm. The gas mixture may be reacted in a plasma processing chamber. at a pressure of between about 3 Torr and about 12 Torr. The substrate temperature may be between about 200° C. and about 400° C. A RF power of between about 200 watts and about 700 wafts, preferably between about 300 watts and about 700 watts, may be applied in a plasma processing chamber for processing 300 mm substrates. A RF power of between about 200 watts and about 700 watts may be applied in a plasma processing chamber for processing 200 mm substrates. The RF power can be provided at a high frequency such as between about 13 and about 14 MHz.
Barrier Bilayers with Silicon Carbide Glue Layers
In another aspect, a barrier bilayer may be deposited on a substrate by first depositing a silicon carbide glue layer by reacting a gas mixture comprising an organosilicon compound, and an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, such as ethylene, and optionally, helium, in a plasma provided in plasma processing chamber, and then depositing a barrier layer on the substrate. Preferably, the organosilicon compound is trimethylsilane. In one example, the silicon carbide glue layer may be about 80 Å thick, and the barrier layer may be about 420 Å thick, resulting in a 500 Å barrier bilayer. A silicon carbide glue layer may be deposited in one embodiment by introducing into a plasma processing chamber an organosilicon compound at a flow rate between about 50 and about 300 sccm, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, such as ethylene, at a flow rate between about 50 and about 500 sccm, such as between about 100 and about 500 sccm, and optionally, helium at a flow rate between about 0 and about 1000 sccm. Preferably, helium is introduced into the chamber at a flow rate of less than about 400 sccm. The gas mixture may be reacted in a plasma processing chamber at a pressure of between about 2 Torr and about 10 Torr, such as between about 2 and about 5 Torr. The substrate temperature may be between about 200° C. and about 400° C., such as between about 300° C. and about 400° C. A RF power of between about 100 watts and about 700 watts, such as between about 300 watts and about 700 watts, or between about 100 watts and about 600 watts may be applied in a plasma processing chamber for processing 300 mm substrates. A RF power of between about 200 watts and about 700 watts may be applied in a plasma processing chamber for processing 200 mm substrates. The RF power can be provided at a high frequency such as between about 13 and about 14 MHz, such as about 13.56 MHz. The gas mixture may be introduced into the chamber by a gas distributor that may be positioned between about 300 mils and out 500 mils from the substrate surface.
In another aspect, a barrier bilayer may be deposited on a substrate by first depositing a silicon carbide glue layer by reacting a gas mixture comprising an organosilicon compound and a gas selected from the group of hydrogen and argon in a plasma provided in a plasma processing chamber, and then depositing a barrier layer on the substrate. Preferably, the organosilicon compound is trimethylsilane. In one example, the silicon carbide glue layer may be about 80 Å thick, and the barrier layer may be about 420 Å thick, resulting in a 500 Å barrier bilayer. In one embodiment, a silicon carbide glue layer may be deposited by introducing into a plasma processing chamber an organosilicon compound at a flow rate between about 50 and about 350 sccm and hydrogen at a flow rate between about 100 and about 500 sccm. The gas mixture may be reacted in a plasma processing chamber at a pressure of between about 3 Torr and about 12 Torr. The substrate temperature may be between about 200° C. and about 400° C. A RF power of between about 200 watts and about 700 watts, preferably between about 300 watts and about 700 watts, may be applied in a plasma processing chamber for processing 300 mm substrates. A RF power of between about 200 watts and about 700 watts may be applied in a plasma processing chamber for processing 200 mm substrates. The RF power can be provided at a high frequency such as between about 13 and about 14 MHz, such as about 13.56 MHz. In another embodiment, a silicon carbide glue layer may be deposited by introducing into a plasma processing chamber an organosilicon compound at a flow rate between about 50 and about 350 sccm and argon at a flow rate between about 100 and about 500 sccm. The gas mixture may be reacted in a plasma processing chamber at a pressure of between about watts 3 Torr and about 12 Torr. The substrate temperature may be between about 200° C. and about 400° C. A RF power of between about 200 watts and about 700 watts, preferably between about 300 watts and about 700 watts, may be applied in a plasma processing chamber for processing 300 mm substrates. A RF power of between about 200 watts and about 700 watts may be applied in a plasma processing chamber for processing 200 mm substrates. The RF power can be provided at a high frequency such as between about 13 and about 14 MHz, such as about 13.56 MHz.
While a preferred thickness of the silicon carbide glue layers described herein in barrier bilayers is about 80 Å, other thickness of the silicon carbide glue layers may be used. For example, a silicon carbide layer of between about 50 Å and about 100 Å may be used. A desired thickness of the silicon carbide glue layer can be determined by exposing a substrate containing the silicon carbide glue layer over an underlying metal feature, such as copper, to a plasma containing oxygen. A change in the reflectivity of the metal indicates that the metal has been oxidized, and thus is not protected sufficiently by the glue layer. This minimum thickness of glue layer that results in substantially no change in the metal reflectivity can be selected as the desired thickness of the silicon carbide glue layer.
In embodiments in which the silicon carbide glue layer is part of a barrier bilayer that also includes a barrier layer, the barrier layer may be an oxygen-doped silicon carbide layer that contains no nitrogen or is substantially nitrogen free. The barrier layer may be deposited on the silicon carbide glue layer by reacting a gas mixture comprising an oxygen-containing compound and an organosilicon compound. The barrier layer may be deposited by reacting a gas mixture comprising an oxygen-containing organosilicon compound with an oxygen-free organosilicon compound. Suitable oxygen-free organosilicon compounds include methylsilane, dimethylsilane, trimethylsilane, ethylsilane, disilanomethane, bis(methylsilano)methane, 1,2-disilanoethane, 1,2-bis(methylsilano)ethane, 2,2-disilanopropane, and 1,3,5-trisilano-2,4,6-trimethylene. Suitable oxygen-containing organosilicon compounds include dimethyldimethoxysilane, 1,3-dimethyldisiloxane, 1,1,3,3-tetramethyldisiloxane, hexamethyldisiloxane, 1,3-bis(silanomethylene)disiloxane, bis(1-methyldisiloxanyl)methane, 2,2-bis(1-methyldisiloxanyl)propane, 1,3,5,7-tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, 2,4,6,8,10-pentamethylcyclopentasiloxane, 1,3,5,7-tetrasilano-2,6-dioxy-4,8-dimethylene, and hexamethylcyclotrisiloxane. The oxygen-containing compound may include carbon dioxide, CO, or water. For example, a gas mixture comprising trimethylsilane, helium, and carbon dioxide may be reacted in a plasma in a plasma processing chamber. Precursors and processing conditions for the deposition of an oxygen-doped silicon carbide layer are also described in commonly assigned U.S. patent application Ser. No. 10/196,498, filed Jul. 15, 2002, and entitled “A Method of Depositing Dielectric Materials in Damascene Applications,” which is incorporated by reference herein. However, other methods may be used to deposit the barrier layer.
In one embodiment, an oxygen-doped silicon carbide barrier layer may be deposited by supplying an organosilicon compound, such as TMS, to a plasma processing chamber at a flow rate between about 50 sccm and about 300 sccm, supplying an oxygen-containing gas, such as CO2, at a flow rate between about 100 sccm and about 800 sccm, supplying an inert gas, such as helium, at a flow rate between about 200 sccm and about 800 sccm, maintaining a substrate temperature between about 300° C. and about 400° C., maintaining a chamber pressure between about 2 Torr and about 5 Torr, a RF power of between about 200 watts and about 500 watts, and a spacing of the gas distributor of the chamber from the substrate of between about 300 mils and about 400 mils. The oxygen-containing gas generally has the formula CxHyOz, with X being from 0 to 2, Y being from 0 to 2, and Z being from 1 to 3, wherein X+Y is at least 1 and X+Y+Z is 3 or less. Thus, the oxygen-containing gas may include carbon dioxide, CO, or water. The oxygen-containing gas is typically an inorganic material. The oxygen-containing gas described herein is considered a non-oxidizing gas compared to oxygen or ozone. Oxygen-doped silicon carbide barrier layers were deposited according to the processes described herein, and the layers were analyzed. FTIR spectra (not shown) of the layers measured over two weeks were stable, suggesting that the composition of the layers is stable and that the layers do not absorb a significant amount of moisture. It was also found that the dielectric constant and the stress of the film did not change significantly one week after deposition. Secondary ion mass spectroscopy (SIMS) was performed to determine the amount of copper diffusion through the barrier layers. The amount of copper that diffused through the films decreased by 3 orders of magnitude over 200 Å, indicating that the films are effective copper barriers.
In another embodiment, an oxygen-doped silicon carbide barrier layer may be deposited as described above, except that an oxygen-containing compound having the general formula
is used instead of an oxygen-containing gas having the general formula CxHyOz, with X being from 0 to 2, Y being from 0 to 2, and Z being from 1 to 3, wherein X+Y is at least 1 and X+Y+Z is 3 or less. In one example, an oxygen-doped silicon carbide barrier layer is deposited from a gas mixture comprising diethylmethylsilane and tetramethyldisiloxane or dimethyldimethoxysilane. In any of the embodiments described herein in which an oxygen-doped silicon carbide barrier layer is deposited using an oxygen-containing gas having the general formula CxHyOz, with X being from 0 to 2, Y being from 0 to 2, and Z being from 1 to 3, wherein X+Y is at least 1 and X+Y+Z is 3 or less, an oxygen-containing compound having the general formula
may be used instead of the oxygen-containing gas.
It was found that increasing the amount of oxygen-containing gas or oxygen-containing compound relative to the organosilicon compound in the deposition of the oxygen-doped silicon carbide layer lowers the dielectric constant of the deposited films by increasing the number of Si—O bonds in the deposited layers. However, too much oxygen doping of the barrier layers may decrease etch selectively between the barrier layers and adjacent dielectric layers that may contain oxygen, resulting in an increased amount of copper diffusion into the barrier layers.
Table 1 shows a comparison of barrier layer properties of oxygen-doped silicon carbide layers deposited by the processes described herein and conventional oxygen-free silicon carbide layers. The oxygen-doped barrier layers typically have a lower dielectric constant and a lower current leakage than the oxygen-free barrier layers.
In another aspect, devices including embodiments of silicon carbide glue layers described herein are provided.
Optionally, the device 300 may also include a barrier layer 320 on the silicon carbide layer 310. The barrier layer 320 may be an oxygen-doped silicon carbide layer. The barrier layer 320 may be formed by reacting a gas mixture comprising trimethylsilane, helium, and carbon dioxide in a plasma in a plasma processing chamber. Thus, the device comprises a barrier bilayer 330 that includes, the silicon carbide layer 310 and the barrier layer 320. The barrier bilayer 330 separates the metal feature 304 in the dielectric layer 302 from the additional layer 312 deposited on the barrier layer 320.
We have found that silicon carbide glue layers deposited according to the embodiments described herein have significantly and unexpectedly improved properties, such as leakage currents and breakdown voltages, compared to layers deposited by reacting a gas mixture of trimethylsilane and helium. An example of typical resulting properties of silicon carbide glue layers deposited from different gas mixtures is shown below in Table 2. The leakage currents of layers deposited according to embodiments described herein, i.e., a trimethylsilane and hydrogen gas mixture, a trimethylsilane, ethylene, and helium gas mixture, and a trimethylsilane and ethylene gas mixture, are typically lower than the leakage current of a layer deposited from a gas mixture of helium and trimethylsilane. The leakage current of layers deposited according to embodiments described herein may be an order of magnitude lower than the leakage current of a layer deposited from a gas mixture of trimethylsilane and helium. Leakage current typically increases with degrading barrier layer properties. The breakdown voltages of layers deposited according to embodiments described herein are typically higher than the breakdown voltage of a layer deposited from a gas mixture of trimethylsilane and helium. However, the uniformity, i.e., the uniformity of the layer surface measured by an optical test across the surface, of the layers described herein is typically not as good as the uniformity of a layer deposited from a gas mixture of trimethylsilane and helium.
It is believed that the layers deposited from a mixture of trimethylsilane and helium have less desirable properties than the layers deposited from a mixture of an organosilicon compound, such as trimethylsilane, and hydrogen or argon because helium may cause damage to deposited layers during the plasma deposition process. Damaged layers may be more likely to have current leakage problems. It is believed that hydrogen and argon do not result in the damage to the layers that helium may cause. For example, it is believed that hydrogen and argon do not contribute as much as helium may to the formation of the broken bonds in the deposition layer that may lead to silicon-silicon bond formation In the deposited layers. Silicon-silicon bonds are undesirable in a barrier layer because of their semiconducting properties, which can contribute to current leakage.
It is believed that the layers deposited from a mixture of an organosilicon compound, such as trimethylsilane, and helium have less desirable properties than the layers deposited from a mixture of an organosilicon compound, such as trimethylsilane, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, such as ethylene, and optionally, helium, because it is expected that the decomposition of an organosilicon compound during the deposition process can lead to the formation of more silicon-silicon (Si—Si) bonds in a mixture of an organosilicon compound and helium than in a mixture of an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, such as ethylene, an organosilicon compound, and optionally, helium. Silicon-silicon bonds are undesirable in a barrier layer because of their semiconducting properties, which can contribute to current leakage. It is believed that the addition of the aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, to a mixture including an organosilicon compound contributes to the formation of Si—C—Si bonds in the deposited layer rather than Si—Si bonds.
In the embodiments described herein, the silicon carbide glue layer may be deposited from a mixture including a precursor or precursors having the formulae SiHa(CH3)b(C2H5)c(C6H5)d, wherein a is 0 to 2, b is 0 to 4, c is 0 to 4,
Endo et al., U.S. Pat. No. 4,532,150, describes mixing ethylene with precursors containing Si—Si bonds to form silicon carbide films. It should be noted that organosilicon compounds containing Si—Si bonds are not described herein. It is believed that depositing a layer from a gas mixture comprising a precursor containing Si—Si bonds contributes to the formation of Si—Si bonds in the deposited layer, and significantly increases current leakage.
While the silicon carbide glue layers described herein have been discussed primarily as barrier layers or components of barrier bilayers, the silicon carbide glue layers described herein may also be used as hard masks.
A silicon carbide glue layer was deposited at a chamber pressure of 5 Torr and temperature of 350° C. from gases which were flowed into a plasma processing chamber as follows:
The substrate was positioned 400 mil from the gas distribution showerhead and 450 watts of high frequency power at 13.56 MHz was applied to the showerhead for plasma enhanced deposition of a silicon carbide silicon carbide glue layer. The silicon carbide glue layer was deposited at a rate of about 886 Å/min, and had a dielectric constant of about 3.73, a uniformity of about 2.5%, a leakage current of about 2.32×10−9 A/cm2 at 1 MV/cm, a leakage current of about 3.06×10−8 A/cm2 at 2 MV/cm, and a breakdown voltage of about 4.47 MV/cm.
A silicon carbide glue layer was deposited at a chamber pressure of 3 Torr and temperature of 350° C. from gases which were flowed into a plasma processing chamber as follows:
The substrate was positioned 400 mil from the gas distribution showerhead and 600 watts of high frequency power at 13.56 MHz was applied to the showerhead for plasma enhanced deposition of a silicon carbide silicon carbide glue layer. The silicon carbide glue layer was deposited at a rate of about 1255 Å/min, and had a dielectric constant of about 3.81, a uniformity of about 2.7%, a leakage current of about 2.04×10−9 A/cm2 at 1 MV/cm, a leakage current of about 4.64×10−8 A/cm2 at 2 MV/cm, and a breakdown voltage of about 4.13 MV/cm.
A silicon carbide glue layer was deposited at a chamber pressure of 9.5 Torr and temperature of 350° C. from gases which were flowed into a plasma processing chamber as follows:
The substrate was positioned 400 mil from the gas distribution showerhead and 450 watts of high frequency power at 13.56 MHz was applied to the showerhead for plasma enhanced deposition of a silicon carbide silicon carbide glue layer. The silicon carbide glue layer was deposited at a rate of about 161 Å/min, and had a dielectric constant of about 3.88, a uniformity of about 5%, a leakage current of about 3.1×10−9 A/cm2 at 1 MV/cm, a leakage current of about 6.1×10−8 A/cm2 at 2 MV/cm, and a breakdown voltage of about 4.3 MV/cm.
A silicon carbide glue layer was deposited at a chamber pressure of 9.5 Torr and temperature of 350° C. from gases which were flowed into a plasma processing chamber as follows:
The substrate was positioned 400 mil from the gas distribution showerhead and 450 watts of high frequency power at 13.56 MHz was applied to the showerhead for plasma enhanced deposition of a silicon carbide silicon carbide glue layer. The silicon carbide glue layer was deposited at a rate of about 713 Å/min, and a dielectric constant of about 4.0, a uniformity of about 1.9%, a leakage current of about 2.8×10−9 A/cm2 at 1 MV/cm, a leakage current of about 4.3×10−8 A/cm2 at 2 MV/cm, and a breakdown voltage of about 3.63 MV/cm.
A barrier layer was deposited on one of the silicon carbide glue layers deposited as in Examples 1–4. The barrier layer was deposited at a chamber pressure of 3.5 torr and temperature of 350° C. from gases which were flowed into a plasma processing chamber as follows:
The substrate was positioned 350 mil from the gas distribution showerhead and 400 watts of high frequency power at 13.56 MHz was applied to the showerhead for plasma enhanced deposition of an oxygen-doped silicon carbide barrier layer. The barrier layer was deposited at a rate of about 920 Å/min, and a dielectric constant of about 3.88, a uniformity of about 1.1%, a leakage current of about 4.2×10−10 A/cm2 at 1 MV/cm, a leakage current of about 3.6×10−9 A/cm2 at 2 MV/cm, a breakdown voltage of about 5.24 MV/cm. The compressive stress of the barrier layer was about 1.82×10−9 dyne/cm2.
Barrier Bilayers with SiN or SiCN Layers
In another aspect, a barrier bilayer may be deposited on a substrate by first depositing a SiN or SiCN layer on a substrate, and then depositing an oxygen-doped silicon carbide barrier layer on the substrate. The oxygen-doped barrier layer may be deposited by the processes described herein for depositing an oxygen-doped silicon carbide barrier that is part of a barrier bilayer that also contains a silicon carbide glue layer. The SiN or SiCN layer may be deposited using conventional techniques for SiN and SiCN deposition. Examples of processing gases and conditions that may be used to deposit SiCN layers are described in U.S. patent application Ser. No. 09/793,818, filed Feb. 23, 2001, which is incorporated by reference herein.
A device including the barrier bilayer is also provided. While
One advantage of the methods and devices described herein that include barrier bilayers is that a photoresist may be deposited directly on the oxygen-doped silicon carbide layer of the barrier bilayer without subjecting the photoresist to nitrogen poisoning.
While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
This application is a continuation of U.S. patent application Ser. No. 10/247,404, filed Sep. 19, 2002, U.S. Pat. No. 6,838,393, which application claims benefit of U.S. provisional patent application Ser. No. 60/397,184, filed Jul. 19, 2002, and which application is a continuation-in-part of U.S. patent application Ser. No. 10/196,498, filed Jul. 15, 2002, now U.S. Pat. No. 6,890,850 which claims benefit of U.S. provisional patent application Ser. No. 60/340,615, filed Dec. 14, 2001, all of which are herein incorporated by reference.
| Number | Name | Date | Kind |
|---|---|---|---|
| 3510369 | Ernick et al. | May 1970 | A |
| 4262631 | Kubacki | Apr 1981 | A |
| 4532150 | Endo et al. | Jul 1985 | A |
| 4634601 | Hamakawa et al. | Jan 1987 | A |
| 4649071 | Tajima et al. | Mar 1987 | A |
| 4759947 | Hishihara et al. | Jul 1988 | A |
| 4872947 | Wang et al. | Oct 1989 | A |
| 4894352 | Lane et al. | Jan 1990 | A |
| 4895734 | Yoshida et al. | Jan 1990 | A |
| 4951601 | Maydan et al. | Aug 1990 | A |
| 4981724 | Hochberg et al. | Jan 1991 | A |
| 5000113 | Wang et al. | Mar 1991 | A |
| 5000178 | Griffith | Mar 1991 | A |
| 5003178 | Livesay | Mar 1991 | A |
| 5011706 | Tarhay et al. | Apr 1991 | A |
| 5086014 | Miyata et al. | Feb 1992 | A |
| 5224441 | Felts et al. | Jul 1993 | A |
| 5238866 | Bolz et al. | Aug 1993 | A |
| 5242530 | Batey et al. | Sep 1993 | A |
| 5298587 | Hu et al. | Mar 1994 | A |
| 5298597 | You et al. | Mar 1994 | A |
| 5314724 | Tsukune et al. | May 1994 | A |
| 5360491 | Carey et al. | Nov 1994 | A |
| 5362526 | Wang et al. | Nov 1994 | A |
| 5423941 | Komura et al. | Jun 1995 | A |
| 5465680 | Loboda | Nov 1995 | A |
| 5468978 | Dowben | Nov 1995 | A |
| 5480300 | Okoshi et al. | Jan 1996 | A |
| 5494712 | Hu et al. | Feb 1996 | A |
| 5525550 | Kato | Jun 1996 | A |
| 5554570 | Maeda et al. | Sep 1996 | A |
| 5565084 | Lee et al. | Oct 1996 | A |
| 5591566 | Ogawa | Jan 1997 | A |
| 5593741 | Ikeda | Jan 1997 | A |
| 5607773 | Ahlburn et al. | Mar 1997 | A |
| 5618619 | Petrmichl et al. | Apr 1997 | A |
| 5628828 | Kawamura et al. | May 1997 | A |
| 5638251 | Goel et al. | Jun 1997 | A |
| 5641607 | Ogawa et al. | Jun 1997 | A |
| 5658834 | Dowben | Aug 1997 | A |
| 5679413 | Petrmichl et al. | Oct 1997 | A |
| 5691209 | Liberkowski | Nov 1997 | A |
| 5710067 | Foote et al. | Jan 1998 | A |
| 5711987 | Bearinger et al. | Jan 1998 | A |
| 5730792 | Camilletti et al. | Mar 1998 | A |
| 5741626 | Jain et al. | Apr 1998 | A |
| 5776235 | Camilletti et al. | Jul 1998 | A |
| 5780163 | Camilletti et al. | Jul 1998 | A |
| 5789316 | Lu | Aug 1998 | A |
| 5789776 | Lancaster et al. | Aug 1998 | A |
| 5817579 | Ko et al. | Oct 1998 | A |
| 5818071 | Loboda et al. | Oct 1998 | A |
| 5855681 | Maydan et al. | Jan 1999 | A |
| 5869396 | Pan et al. | Feb 1999 | A |
| 5876891 | Takimoto et al. | Mar 1999 | A |
| 5926740 | Forbes et al. | Jul 1999 | A |
| 5976979 | Chen | Nov 1999 | A |
| 5989998 | Sugahara et al. | Nov 1999 | A |
| 6045877 | Gleason et al. | Apr 2000 | A |
| 6051321 | Lee et al. | Apr 2000 | A |
| 6054379 | Yau et al. | Apr 2000 | A |
| 6057251 | Goo et al. | May 2000 | A |
| 6060132 | Lee | May 2000 | A |
| 6068884 | Rose et al. | May 2000 | A |
| 6071809 | Zhao | Jun 2000 | A |
| 6072227 | Yau et al. | Jun 2000 | A |
| 6080526 | Yang et al. | Jun 2000 | A |
| 6107192 | Subrahmanyan et al. | Aug 2000 | A |
| 6114259 | Sukharev et al. | Sep 2000 | A |
| 6124641 | Matsuura | Sep 2000 | A |
| 6140226 | Grill et al. | Oct 2000 | A |
| 6147009 | Grill et al. | Nov 2000 | A |
| 6153537 | Bacchetta et al. | Nov 2000 | A |
| 6159871 | Loboda et al. | Dec 2000 | A |
| 6169039 | Lin et al. | Jan 2001 | B1 |
| 6242339 | Aoi | Jun 2001 | B1 |
| 6242530 | Konig et al. | Jun 2001 | B1 |
| 6287990 | Cheung et al. | Sep 2001 | B1 |
| 6291334 | Somekh | Sep 2001 | B1 |
| 6303523 | Cheung et al. | Oct 2001 | B1 |
| 6312793 | Grill et al. | Nov 2001 | B1 |
| 6316167 | Angelopoulos et al. | Nov 2001 | B1 |
| 6331494 | Olson et al. | Dec 2001 | B1 |
| 6340435 | Bjorkman et al. | Jan 2002 | B1 |
| 6340628 | Van Cleemput et al. | Jan 2002 | B1 |
| 6344693 | Kawahara et al. | Feb 2002 | B1 |
| 6348725 | Cheung et al. | Feb 2002 | B1 |
| 6352945 | Matsuki et al. | Mar 2002 | B1 |
| 6548899 | Ross | Apr 2002 | B1 |
| 6383955 | Matsuki et al. | May 2002 | B1 |
| 6399489 | M'Saad et al. | Jun 2002 | B1 |
| 6410462 | Yang et al. | Jun 2002 | B1 |
| 6410463 | Matsuki | Jun 2002 | B1 |
| 6413583 | Moghadam et al. | Jul 2002 | B1 |
| 6429121 | Hopper et al. | Aug 2002 | B1 |
| 6432846 | Matsuki | Aug 2002 | B1 |
| 6436824 | Chooi et al. | Aug 2002 | B1 |
| 6437443 | Grill et al. | Aug 2002 | B1 |
| 6441491 | Grill et al. | Aug 2002 | B1 |
| 6444136 | Liu et al. | Sep 2002 | B1 |
| 6444568 | Sundararajan et al. | Sep 2002 | B1 |
| 6455445 | Matsuki et al. | Sep 2002 | B1 |
| 6465366 | Nemani et al. | Oct 2002 | B1 |
| 6479110 | Grill et al. | Nov 2002 | B1 |
| 6479409 | Shioya et al. | Nov 2002 | B1 |
| 6486082 | Cho et al. | Nov 2002 | B1 |
| 6489238 | Tsui | Dec 2002 | B1 |
| 6495448 | Lee | Dec 2002 | B1 |
| 6500773 | Gaillard et al. | Dec 2002 | B1 |
| 6511903 | Yau et al. | Jan 2003 | B1 |
| 6511909 | Yau et al. | Jan 2003 | B1 |
| 6528426 | Olsen et al. | Mar 2003 | B1 |
| 6531714 | Bacchetta et al. | Mar 2003 | B1 |
| 6532150 | Sivertsen et al. | Mar 2003 | B1 |
| 6537733 | Campana et al. | Mar 2003 | B1 |
| 6537929 | Cheung et al. | Mar 2003 | B1 |
| 6541282 | Cheung et al. | Apr 2003 | B1 |
| 6541398 | Grill et al. | Apr 2003 | B1 |
| 6548690 | Mimoun | Apr 2003 | B1 |
| 6555476 | Olsen et al. | Apr 2003 | B1 |
| 6559520 | Matsuki et al. | May 2003 | B1 |
| 6562690 | Cheung et al. | May 2003 | B1 |
| 6573193 | Yu et al. | Jun 2003 | B1 |
| 6573196 | Gaillard et al. | Jun 2003 | B1 |
| 6582777 | Ross et al. | Jun 2003 | B1 |
| 6583048 | Vincent et al. | Jun 2003 | B1 |
| 6583071 | Weidman et al. | Jun 2003 | B1 |
| 6589888 | Nemani et al. | Jul 2003 | B1 |
| 6592890 | Green | Jul 2003 | B1 |
| 6593247 | Huang et al. | Jul 2003 | B1 |
| 6593633 | Jan et al. | Jul 2003 | B1 |
| 6593653 | Sundararajan et al. | Jul 2003 | B1 |
| 6593655 | Loboda et al. | Jul 2003 | B1 |
| 6596655 | Cheung et al. | Jul 2003 | B1 |
| 6624053 | Passemard | Sep 2003 | B1 |
| 6627532 | Gaillard et al. | Sep 2003 | B1 |
| 6642157 | Shioya et al. | Nov 2003 | B1 |
| 6649531 | Cote et al. | Nov 2003 | B1 |
| 6656837 | Xu et al. | Dec 2003 | B1 |
| 6660391 | Rose et al. | Dec 2003 | B1 |
| 6660656 | Cheung et al. | Dec 2003 | B1 |
| 6660663 | Cheung et al. | Dec 2003 | B1 |
| 6703265 | Asami et al. | Mar 2004 | B1 |
| 6730593 | Yau et al. | May 2004 | B1 |
| 6734115 | Cheung et al. | May 2004 | B1 |
| 6756323 | Grill et al. | Jun 2004 | B1 |
| 6759327 | Xia et al. | Jul 2004 | B1 |
| 6770573 | Grill et al. | Aug 2004 | B1 |
| 6790789 | Grill et al. | Sep 2004 | B1 |
| 6838393 | Yim et al. | Jan 2005 | B1 |
| 6852651 | Shioya et al. | Feb 2005 | B1 |
| 6875699 | Lassig et al. | Apr 2005 | B1 |
| 6890850 | Lee et al. | May 2005 | B1 |
| 6974766 | Huang | Dec 2005 | B1 |
| 20010005546 | Cheung et al. | Jun 2001 | A1 |
| 20020000670 | Yau et al. | Jan 2002 | A1 |
| 20020045361 | Cheung et al. | Apr 2002 | A1 |
| 20020093075 | Gates et al. | Jul 2002 | A1 |
| 20020098714 | Grill et al. | Jul 2002 | A1 |
| 20020111042 | Yau et al. | Aug 2002 | A1 |
| 20020155386 | Xu et al. | Oct 2002 | A1 |
| 20020160626 | Matsuki et al. | Oct 2002 | A1 |
| 20020172766 | Laxman et al. | Nov 2002 | A1 |
| 20020173172 | Loboda et al. | Nov 2002 | A1 |
| 20020187629 | Huang et al. | Dec 2002 | A1 |
| 20030001282 | Meynen et al. | Jan 2003 | A1 |
| 20030003765 | Gibson, Jr. et al. | Jan 2003 | A1 |
| 20030003768 | Cho et al. | Jan 2003 | A1 |
| 20030008511 | Tsai et al. | Jan 2003 | A1 |
| 20030040195 | Chang et al. | Feb 2003 | A1 |
| 20030042605 | Andideh et al. | Mar 2003 | A1 |
| 20030064154 | Laxman et al. | Apr 2003 | A1 |
| 20030068881 | Xia et al. | Apr 2003 | A1 |
| 20030085408 | Yang et al. | May 2003 | A1 |
| 20030089988 | Matsuure | May 2003 | A1 |
| 20030111730 | Takeda et al. | Jun 2003 | A1 |
| 20030129827 | Lee et al. | Jul 2003 | A1 |
| 20030139035 | Yim et al. | Jul 2003 | A1 |
| 20030139062 | Grill et al. | Jul 2003 | A1 |
| 20030194495 | Li et al. | Oct 2003 | A1 |
| 20030194496 | Xu et al. | Oct 2003 | A1 |
| 20030198742 | Vrtis | Oct 2003 | A1 |
| 20030211244 | Li et al. | Nov 2003 | A1 |
| Number | Date | Country |
|---|---|---|
| 41 26 759 | Feb 1993 | DE |
| 196 54 737 | Dec 1996 | DE |
| 199 04 311 | Aug 1999 | DE |
| 0 613 178 | Feb 1994 | EP |
| 0 725 440 | Aug 1996 | EP |
| 0 935 283 | Aug 1999 | EP |
| 1 029 728 | Aug 2000 | EP |
| 1 107 303 | Jun 2001 | EP |
| 1 122 770 | Aug 2001 | EP |
| 1 176 226 | Jan 2002 | EP |
| 1 354 980 | Oct 2003 | EP |
| 09-008031 | Jan 1997 | JP |
| 9-237785 | Jul 1997 | JP |
| 09-320075 | Dec 1997 | JP |
| 09-321175 | Sep 1999 | JP |
| WO 9921706 | May 1999 | WO |
| WO 9933102 | Jul 1999 | WO |
| WO 9941423 | Aug 1999 | WO |
| WO 0019498 | Apr 2000 | WO |
| WO 0019508 | Apr 2000 | WO |
| WO 0020900 | Apr 2000 | WO |
| Number | Date | Country | |
|---|---|---|---|
| 20050130440 A1 | Jun 2005 | US |
| Number | Date | Country | |
|---|---|---|---|
| 60397184 | Jul 2002 | US | |
| 60340615 | Dec 2001 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 10247404 | Sep 2002 | US |
| Child | 11021319 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 10196498 | Jul 2002 | US |
| Child | 10247404 | US |
