Claims
- 1. A method for producing an aluminum alloy containing crystallized Si and Al for a semiconductor device comprising the steps of:
- (a) solidifying a molten material into a less than 42-mesh powder through an atomizing method at an average cooling speed of 10.sup.2 .degree.K/sec or higher, and
- (b) forming said powder by hot plastic working into a material containing 30-60% by weight of Si with Al as the remainder.
- 2. A method according to claim 1, wherein the initially crystallized Si contained in said aluminum alloy is 50 .mu.m or smaller in size.
- 3. A method according to claim 2, wherein the aluminum alloy has a coefficient of 18.times.10.sub.-6 /.degree.C. or less.
- 4. A method for producing an aluminum alloy containing crystallized Si and Al for a semiconductor device according to claim 1, wherein the hot plastic working is powder forging.
- 5. A method for producing an aluminum alloy containing crystallized Si and Al for a semiconductor device according to claim 1, wherein the hot plastic working is by sinter forging.
- 6. A method for producing a material for a semiconductor device, comprising the steps of:
- uniformly dispersing Si powder in an aluminum matrix through a mechanical alloying method and forming said compound material by hot plastic working into an aluminum alloy containing 30.about.60 by weight of Si and Al as the remaining part.
- 7. A method according to claim 6, wherein said Si powder has a particle diameter of 0.3.about.50 .mu.m.
Priority Claims (3)
Number |
Date |
Country |
Kind |
59-208471 |
Oct 1984 |
JPX |
|
59-240034 |
Nov 1984 |
JPX |
|
59-253497 |
Nov 1984 |
JPX |
|
Parent Case Info
This is a division of application Ser. No. 783,603, filed Oct. 3, 1985 now abandoned.
US Referenced Citations (4)
Number |
Name |
Date |
Kind |
4297136 |
Pickens et al. |
Oct 1987 |
|
4402905 |
Burke et al. |
Sep 1983 |
|
4619697 |
Hijkata et al. |
Oct 1986 |
|
4702885 |
Odani et al. |
Oct 1987 |
|
Divisions (1)
|
Number |
Date |
Country |
Parent |
783603 |
Oct 1985 |
|