Claims
- 1. A packaged semiconductor device, comprising:
a substrate having a first portion with a first lead connected thereto, a second portion with a second lead connected thereto, and wherein the first and second portions are electrically isolated from each other; a semiconductor die having top and bottom surfaces and an active electronic device therein, the device having only two terminals for external connection of the device, the terminals consisting of a first terminal connected to a first conductive layer on the bottom surface of the die, and a second terminal connected to a second conductive layer on the top surface of the die, the first conductive layer being attached to a top surface of the first portion of the substrate by a first joint of an electrically conductive material; and, a metal strap having a cover portion, a flange portion, and a down-set portion between the cover and flange portions, the cover portion being attached to the second conductive layer on the die with a second joint of an electrically conductive material, and the flange portion being attached to a top surface of the second portion of the substrate with a third joint of an electrically conductive material.
- 2. The semiconductor device of claim 1, wherein the active device comprises a diode rectifier, and wherein the first and second terminals of the device respectively comprise the anode and the cathode of the rectifier.
- 3. The semiconductor device of claim 1, wherein the top surface of the second portion of the substrate has a recess therein, and wherein the flange portion of the metal strap is captivated within the recess.
- 4. The semiconductor device of claim 1, wherein the cover portion of the metal strap has a plurality of apertures therein, and wherein the electrically conductive material of the second joint forms an interlocking key in each of the apertures.
- 5. The semiconductor device of claim 1, wherein the flange portion of the strap and the second portion of the substrate each has one of a pair of corresponding apertures therein, and wherein the electrically conductive material of the third joint forms an interlocking key in each of the apertures.
- 6. The semiconductor device of claim 1, wherein the substrate comprises a metal lead frame or a PCB.
- 7. A packaged semiconductor device, comprising:
a substrate having a first portion with a first lead connected thereto, a second portion electrically isolated from the first portion and having a second lead connected thereto, and a third lead electrically isolated from the first and second portions; a semiconductor die having top and bottom surfaces and an active electronic device formed therein, the device having a first terminal connected to a first conductive layer on the bottom surface of the die, a second terminal connected to a second conductive layer on the top surface of the die, and a third terminal connected to a third conductive layer on the bottom surface of the die, the third conductive layer being electrically isolated from the first conductive layer; and, a metal strap having a cover portion, a flange portion, and a down-set portion between the cover and flange portions, the first conductive layer on the die being attached to a top surface of the first portion of the substrate with a first joint of an electrically conductive material, the cover portion of the strap being attached to the second conductive layer on the die with a second joint of an electrically conductive material, the flange portion of the strap being attached to a top surface of the second portion of the substrate with a third joint of an electrically conductive material, and the third conductive layer on the die being attached to a top surface of the third lead with a fourth joint of an electrically conductive material.
- 8. The semiconductor device of claim 7, wherein:
the active device comprises a MOSFET, an IGBT, a BJT, or an SCR; the first terminal of the device comprises a source of the MOSFET or the IGBT, an emitter of the BJT, or an anode of the SCR; the second terminal of the device comprises a drain of the MOSFET or the IGBT, a collector of the BJT, or a cathode of the SCR; and, the third terminal of the device comprises a gate of the device.
- 9. The semiconductor device of claim 7, wherein the top surface of the second portion of the substrate has a recess therein, and wherein the flange portion of the metal strap is captivated within the recess.
- 10. The semiconductor device of claim 7, wherein the cover portion of the metal strap has a plurality of apertures therein, and wherein the electrically conductive material of the second joint forms an interlocking key in each of the apertures.
- 11. The semiconductor device of claim 7, wherein the flange portion of the strap and the second portion of the substrate each has one of a pair of corresponding apertures therein, and wherein the electrically conductive material of the third joint forms an interlocking key in each of the apertures.
- 12. The semiconductor device of claim 7, wherein the first portion of the substrate comprises a metal die-mounting pad.
- 13. A method for making a packaged semiconductor device, the method comprising:
providing a substrate having a first portion with a first lead connected thereto, and a second portion with a second lead connected thereto, the first and second portions being electrically isolated from each other; providing a semiconductor die having top and bottom surfaces and an active electronic device formed therein, the device having only two terminals for the external connection of the device, the terminals consisting of a first terminal connected to a first conductive layer on the bottom surface of the die, and a second terminal connected to a second conductive layer on the top surface of the die; providing a metal strap having a cover portion, a flange portion, and a down-set portion connecting the cover portion to the flange portion; and, respectively attaching the first conductive layer on the die to a top surface of the first portion of the substrate, the cover portion of the strap to the second conductive layer on the die, and the flange portion of the strap to a top surface of the second portion of the substrate with respective first, second, and third joints of an electrically conductive material.
- 14. The method of claim 13, wherein attaching the flange portion of the strap to a top surface of the second portion of the substrate with a third joint of an electrically conductive material comprises providing a recess in the top surface of the second portion of the substrate and captivating the flange within the recess.
- 15. The method of claim 13, wherein attaching the cover portion of the strap to the second conductive layer on the die with a second joint of an electrically conductive material comprises providing a plurality of apertures in the cover portion and forming an interlocking key of the electrically conductive material of the second joint in each of the apertures.
- 16. The method of claim 13, wherein attaching the flange portion of the strap to a top surface of the second portion of the substrate with a third joint of an electrically conductive material comprises providing one of a pair of corresponding apertures in each of the flange portion of the strap and the second portion of the substrate and forming an interlocking key of the electrically conductive material of the third joint in each of the apertures.
- 17. A method for making a packaged semiconductor device, the method comprising:
providing a substrate having a first portion with a first lead connected thereto, a second portion electrically isolated from the first portion and having a second lead connected thereto, and a third lead electrically isolated from the first and second portions; providing a semiconductor die having top and bottom surfaces and an active electronic device formed therein, the device having a first terminal connected to a first conductive layer on the bottom surface of the die, a second terminal connected to a second conductive layer on the top surface of the die, and a third terminal connected to a third conductive layer on the bottom surface of the die, the third conductive layer being electrically isolated from the first conductive layer; providing a metal strap having a cover portion, a flange portion, and a down-set portion connecting the cover portion to the flange portion; and, respectively attaching the first conductive layer on the die to a top surface of the first portion of the substrate, the cover portion of the strap to the second conductive layer on the die, the flange portion of the strap to a top surface of the second portion of the substrate, and the third conductive layer on the die to a top surface of the third lead with respective first, second, third, and fourth joints of an electrically conductive material.
- 18. The method of claim 17, wherein attaching the flange portion of the strap to a top surface of the second portion of the substrate with a third joint of an electrically conductive material comprises providing a recess in the top surface of the second portion of the substrate and captivating the flange within the recess.
- 19. The method of claim 17, wherein attaching the cover portion of the strap to the second conductive layer on the die with a second joint of an electrically conductive material comprises providing a plurality of apertures in the cover portion and forming an interlocking key of the electrically conductive material of the second joint in each of the apertures.
- 20. The method of claim 17, wherein attaching the flange portion of the strap to a top surface of the second portion of the substrate with a third joint of an electrically conductive material comprises providing one of a pair of corresponding apertures in each of the flange portion of the strap and the second portion of the substrate and forming an interlocking key of the electrically conductive material of the third joint in each of the apertures.
- 21. The method of claim 13, wherein the semiconductor device comprises one of a plurality of identical devices connected together in the form of a strip or an array, and further comprising:
singulating the device from the strip or array.
- 22. The method of claim 17, wherein the semiconductor device comprises one of a plurality of identical devices connected together in the form of a strip or an array, and further comprising:
singulating the device from the strip or array.
RELATED APPLICATIONS
[0001] This application is related to U.S. application Ser. No. 09/452,545, filed Dec. 1, 1999, and U.S. application Ser. No. 09/536,236, filed Mar. 27, 2000.
Continuations (3)
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Number |
Date |
Country |
Parent |
09587136 |
Jun 2000 |
US |
Child |
10256905 |
Sep 2002 |
US |
Parent |
09452545 |
Dec 1999 |
US |
Child |
10256905 |
Sep 2002 |
US |
Parent |
09536236 |
Mar 2000 |
US |
Child |
10256905 |
Sep 2002 |
US |