Claims
- 1. A semiconductor device comprising a semiconductor element, an electrode pad on the element, and a copper wire bonded on the electrode pad and connecting the electrode pad to an external lead,
- wherein said electrode pad comprises:
- a first metal layer consisting essentially of aluminum or an aluminum alloy on the semiconductor element, ohmically contacting the semiconductor element and having a thickness of 0.5 to 2.5 micrometers,
- a second metal layer consisting essentially of vanadium or a vanadium alloy on the first metal layer and having a thickness of 0.1 to 0.8 micrometers, and
- a third metal layer consisting essentially of aluminum or an aluminum alloy on the second metal layer and having a thickness of 0.5 to 5.0 micrometers.
Priority Claims (1)
Number |
Date |
Country |
Kind |
61-294902 |
Dec 1986 |
JPX |
|
Parent Case Info
This is a division of application Ser. No. 130,514, filed Dec. 9, 1987, still pending.
US Referenced Citations (3)
Foreign Referenced Citations (2)
Number |
Date |
Country |
0082012 |
Jun 1983 |
EPX |
54-128280 |
Apr 1979 |
JPX |
Non-Patent Literature Citations (1)
Entry |
"Electronigration Improvement of AL-Cu or Au Conductors", Howard-IBM Technical Disclosure Bulletin vol. 21, No. 12, May 1979. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
130514 |
Dec 1987 |
|