1. Field of the Invention
The present invention relates to a semiconductor package and method for fabricating the same.
2. Discussion of Related Art
Semiconductor packages such as ball grid array (BGA) package, chip scale package and micro ball grid array package reflect the trend towards of miniaturization and thinness in packaging. Furthermore, today's semiconductor chips are generating increasing amounts of heat during the operation of the semiconductor chip.
Moreover, input/output pads 4′ of semiconductor chip 2′ are connected to bond fingers 12′ formed on printed circuit board 10′ through conductive wires 6′. The upper side of printed circuit board 10′, including semiconductor chip 2′, is encapsulated with an encapsulant 20′ so as to protect semiconductor chip 2′, conductive wires 6′ and their bonded portions from harmful external environments. Conductive balls 30′ are fused to ball lands 15′ formed on the bottom face of printed circuit board 10′ so as to be able to transmit electric signals between semiconductor chip 2′ and a mother board (not shown) when semiconductor chip 2′ is mounted on the mother board.
In such a conventional BGA semiconductor package, electric signals from semiconductor chip 2′ are delivered to the mother board through input/output pads 4′, conductive wires 6′, bond fingers 12′, connection parts 13′, via hole 14′, ball lands 15′ and conductive balls 30′ sequentially, or they are transmitted reversely. However, in the conventional BGA package, semiconductor chip 2′ is mounted on the top of relatively thick printed circuit board 10′, which increases the thickness of the semiconductor package and makes it unsatisfactory in applications requiring a small and thin semiconductor package. Consequently, the conventional BGA package is not suitable for small electronic devices such as cellular phone and pager.
Further, as described above, the amount of heat generated per unit volume during the operation of the semiconductor chip is relatively high, but the heat spreading efficiency is low, which deteriorates the electrical performance of the semiconductor chip and, according to circumstances, may lead to failure. There has been proposed a semiconductor package having a heat spreading plate for easily emitting heat generated during the operation of the semiconductor chip. In this case, however, mounting of the heat spreading plate increases the thickness of the semiconductor package and manufacturing cost.
Meanwhile, the currently manufactured semiconductor package is generally 5×5 mm in area and 1 mm in thickness. Accordingly, a circuit board strip capable of simultaneously fabricating tens to hundreds of semiconductor packages has not been realized so far, even though it is ideal for as many semiconductor packages as possible to be made from a single circuit board strip with a conventional size. This is because of poor wire bonding due to warpage caused by a difference in the thermal expansion coefficients between different materials constituting the circuit board strip, inferior molding, and/or damage to the semiconductor chip due to momentary discharging of static electricity accumulated during the molding process.
The conventional method of fabricating a semiconductor package, as mentioned above, has a shortcoming in that the runner gate should be formed on one side of the circuit board in the step of molding. This runner gate raises the manufacturing cost of the package because it is formed by plating a metal such as gold whose strength of adhesion to the encapsulant is smaller than that of the circuit board. Further, any increase in the number of or change in the location of the conductive balls 30′ is limited since the ball lands cannot be formed at the runner gate region.
Moreover, providing a mold having the runner and gate with a shape corresponding to the runner gate of the circuit board, i.e., top die, can be complicated and costly. In addition, if the runner gate of the circuit board during molding, it is possible that the melted encapsulant will bleed out toward the ball lands. This obstructs the fusing of conductive balls 30′ to the ball lands.
U.S. Pat. No. 5,620,928 provides another example of a conventional package.
Accordingly, the present invention is directed to a semiconductor package and method for fabricating the same that substantially obviates limitations and disadvantages of the related art.
A first objective of the present invention is to provide a very thin semiconductor package.
A second objective of the present invention is to provide a semiconductor package having excellent heat spreading performance.
A third objective of the present invention is to provide a semiconductor package having excellent heat spreading performance, wherein the backside of the chip may be grounded and marked.
A fourth objective of the present invention is to provide a method for fabricating the semiconductor package according to the first, second and third objectives.
Additional objectives, features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
In one embodiment, a semiconductor package within the present invention includes: a semiconductor chip having a first face and a second face, the first face having a plurality of input/output pads formed thereon; a circuit board composed of a resin film having a first face and a second face, a circuit pattern layer including a plurality of bond fingers and ball lands, and a cover coat covering the circuit pattern layer with the plurality of bond fingers and ball lands selectively exposed, the circuit pattern layer being formed on the first face of the resin film, the circuit board having a through hole at the center thereof, the semiconductor chip being placed in the through hole; an electrical conductor such as bondwires that electrically connects the input/output pads of the semiconductor chip to the bond fingers of the circuit board; an encapsulant for encapsulating the semiconductor chip, connection means and a part of the circuit board; and a plurality of conductive balls fused to the circuit board. Such a package may be very thin.
In the various embodiments of packages within the present invention, the second face of the semiconductor chip in the semiconductor package may be externally exposed, or a metal thin film may be formed on the second face of the semiconductor chip and/or the second face of the resin film, or a heat spreading plate is formed on the second face of the resin film. Such packages provide excellent heat spreading performance.
In other package embodiments within the present invention, the second face of the semiconductor chip and the second face of the resin film of the semiconductor packages are covered by a metal thin film or conductive ink marking, which allows an electrical connection thereof to a ground voltage supply or some other voltage supply.
The present invention also provides a method for fabricating a semiconductor package. One embodiment within the present invention includes the steps of: providing a circuit board having a plurality of bond fingers and ball lands, the circuit board having a through hole formed at the center thereof; locating a semiconductor chip having a plurality of input/output pads at one face thereof in the through hole of the circuit board; electrically connecting the input/output pads of the semiconductor chip to the bond fingers of the circuit board through an electrical conductor such as bond wires; encapsulating the semiconductor chip, conductors, and a predetermined region of the circuit board with an encapsulant; and fusing conductive balls to the ball lands of the circuit board, to form input/output terminals.
Another embodiment of a method within the present invention for fabricating a plurality of semiconductor packages includes steps of: providing a resin film and a matrix type circuit board strip for the semiconductor packages, the resin film forming a main strip, the main strip being composed of a plurality of substrips connected in one body, each substrip having a plurality through holes, equally spaced apart, each through hole being a region where a semiconductor chip will be placed, the circuit board strip having a conductive circuit pattern formed on the resin film; attaching a closing means to one face of the circuit board strip so as to close all the through holes formed in each substrip thereof; locating the semiconductor chip in each through hole, to attach it onto the closing means; connecting the semiconductor chip and the circuit pattern to each other through an electrical conductor; charging the through holes with an encapsulant for protection of the semiconductor chip and connection means from external environment; removing the closing means from the circuit board strip; fusing conductive balls as external input/output terminals; and cutting the portion of the resin film around each through hole, to separate the semiconductor packages.
In one embodiment of the above method, the closing means has an opening as a mold gate. In another alternative embodiment, a mold gate G is formed above a cavity CV of a top die TD so as to minimize wire sweeping phenomenon during molding process.
The circuit board may have a metal thin film on the second face of the resin film. The circuit pattern layer formed on the first face of the resin film may be connected to the metal thin film formed on its second face through a conductive via hole. Further, a cover coat may be formed on the metal thin film formed on the second face of the resin film. Alternatively, a heat spreading plate may be formed on the second face of the resin film.
The circuit board may have the circuit pattern layer having the plurality of ball lands formed on the second face of the resin film. In such an embodiment, the circuit pattern layer formed on the first face of the resin film is connected to the circuit pattern layer having the plurality of ball lands formed on its second face through a conductive via hole. Further, a cover coat may be formed on the circuit pattern layer formed on the second face of the resin film exposing the lands. A heat spreading plate may be placed on the second face of the circuit board.
The semiconductor packages described above can be constructed in such a manner that the first face of the semiconductor chip and the face of the circuit board on which the bond fingers are formed face the same direction, and the second face of the semiconductor chip, the face of the circuit board on which the bond fingers are not formed and one face of the encapsulant are in the same plane.
An insulating film may be attached to the second face of the semiconductor chip, the face of the circuit board on which the bond fingers are formed and one face of the encapsulant. The insulating film may be an ultraviolet tape whose adhesion characteristic is weakened or lost when ultraviolet rays are irradiated thereto.
A conductive metal thin film may be attached to the second face of the semiconductor chip, the face of the circuit board on which the bond fingers are not formed and one face of the encapsulant. The conductive metal thin film may be formed from copper.
The first face of the semiconductor chip and the face of the circuit board on which the bond fingers are formed may face the same direction, and the second face of the semiconductor chip, one face of the heat spreading plate formed one side of the circuit board and one face of the encapsulant may be in the same plane.
An insulating film may be attached to the second face of the semiconductor chip, one face of the heat spreading plate formed one side of the circuit board and one face of the encapsulant, which are located in the same plane. The insulating film may be an ultraviolet tape.
A conductive metal thin film may be attached to the second face of the semiconductor chip, one face of the heat spreading plate formed on one side of the circuit board and one face of the encapsulant which are located in the same plane. The conductive metal thin film may be formed from copper.
A conductive ink film with a design may be formed on the second face of the semiconductor chip, one face of the encapsulant and a part of the face of the circuit board on which the bond fingers are not formed which form the same plane.
The conductive ink film having a design can be formed on the second face of the semiconductor chip, one face of the heat spreading plate formed on one side of the circuit board and one face of the encapsulant which are located in the same plane.
The conductive ink film having a design can be formed only on the second face of the semiconductor chip, a part of one face of the heat spreading plate formed on one side of the circuit board and one face of the encapsulant which are located in the same plane.
The conductive balls may be fused to the ball lands formed on the second face of the resin film of the circuit board.
There is explained below a circuit board strip used for the method of fabricating a semiconductor package of the present invention. A ground ring may be electrically connected to at least one circuit line constituting the circuit pattern. The ground plane is exposed out of the cover coat and electrically connected to the ground ring.
The closing means, such as cover lay tape, can be attached to one face of the circuit board strip constituting the main strip. Separate closing means may be attached to the substrips in one-to-one relation with them. One side of each of the separate closing means covers a slot formed between neighboring substrips. Alternatively, a single one-body closing means having a similar size to the circuit board strip, the one-body closing means having a cutting pin hole line located between neighboring substrips corresponding to the slot. The above designs minimize the warpage cause by a difference in coefficient of the thermal expansion which increases with the length, previously preventing detects generated during the fabrication of the semiconductor package.
The closing means has an opening as a mold gate for each package, the opening being formed at a part of the region disposed between the edge of the area where the semiconductor chip is mounted and the edge of each of the through holes within each substrip. The opening has a shape selected from circular, square and bent rectangular forms, but the present invention is not restricted to these shapes.
In the method for fabricating a semiconductor package to achieve the fourth objective of the present invention, a through hole closing means may be attached to the face of the circuit board on which the bond fingers are not formed before the step of providing the circuit board.
The closing means can be removed before the step of fusing the conductive balls to the ball lands of the circuit board to form the input/output terminals.
The closing means can be also removed after the step of fusing the conductive balls to the ball lands of the circuit board to form the input/output terminals.
The closing means may be an insulating film, e.g., an ultraviolet tape, or a conductive metal thin film, e.g., copper.
According to the method for fabricating a semiconductor package of the present invention as described above, the semiconductor chip is located inside the through hole having a predetermined width formed on the circuit board. Accordingly, the thickness of the semiconductor chip is offset by that of the circuit board to make the semiconductor package remarkably thin. Further, one face of the semiconductor chip is directly exposed out of the encapsulant, to increase heat radiation, improving thermal and electrical performance of the semiconductor chip.
In addition, since the heat spreading plate or metal thin film can be formed one face of the circuit board or one side of the circuit board including the one side of the semiconductor, one side of the semiconductor chip can be protected from external environment and its heat radiation performance can be improved. Further, the metal thin film or conductive ink film is formed to ground the semiconductor chip without being electrically separated, raising the electrical performance thereof.
Meanwhile, the mold runner gate is not formed on the face of the circuit board on which the circuit pattern is formed so as to allow the number of the ball lands of the circuit pattern to be as many as possible. The mold runner gate may be formed on the face of the closing means on which the circuit pattern is not formed. This enables free designing of the mold runner.
In the step of removing the closing means, a punch may be used to perforate through the slot formed between neighboring substrips to separate one side of the closing means from the circuit board strip.
The circuit board strip is formed in such a manner that the plural substrips having the plurality of through holes are interconnected. Thus, tens to hundreds of semiconductor packages can be simultaneously fabricated using a single circuit board strip. Further, the punch perforates through the slot to easily and safely remove the cover lay tape, preventing or minimizing damages in the circuit board strip. Moreover, the ground ring or ground plane is formed on the circuit board strip so as to prevent the accumulation of static electricity in the step of molding. This effectively solves various problems including damage to the semiconductor chip and circuit pattern of the circuit board strip due to momentary discharging of static electricity.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
Reference will now be made in detail to various exemplary embodiments of the present invention.
Bond fingers 12 may be plated with gold (Au) or silver (Ag) and ball lands 15 may be plated with gold (Au), silver (Ag), nickel (Ni) or palladium (Pd) for easy bonding with a connection means 6 and a conducting ball 30, respectively. Resin film 11 may be formed from a hard BT (bismaleimide triazine) epoxy resin. The circuit pattern layers are covered with a cover coat 16, with bond fingers 12 and ball lands 15 selectively exposed, to be protected from external physical, chemical, electrical and mechanical shocks. Cover coat 16 may be formed from a general insulating high polymer resin. Input/output pads 4 of semiconductor chip 2 and bond fingers 12 among circuit pattern layers of circuit board 10 are electrically connected to each other through connection means 6. Here, conductive wires such as gold wires or aluminum wires or leads are used as connection means 6.
Semiconductor chip 2, through hole 18, connection means 6, and a portion of circuit board 10 are encapsulated with an encapsulant 20 so as to be protected from the external physical, chemical and mechanical shocks. Encapsulated 20 may be formed from an epoxy-molding compound by use of a mold or a liquid epoxy resin using a dispenser. In this embodiment, the encapsulated structure is formed so as to have second face 2b of semiconductor chip 2 exposed. Plural conductive balls 30 made of Sn, Pb or compound thereof are adhesively fused to ball lands 15 among circuit pattern layers of circuit board 10, so that the package may be mounted on a motherboard (not shown). Here, first face 2a of semiconductor chip 2 and the face of circuit board 10 on which bond fingers 12 are formed face the same direction, and second face 2b of semiconductor chip 2 and second face 11b of resin film 11 are in the same plane, achieving a thin semiconductor package. Further, second face 2b of semiconductor chip 2 is exposed out of encapsulant 20 to externally spread heat generated from semiconductor chip 2 with ease.
For ease of description, only the differences between the semiconductor packages disclosed below and the semiconductor package of
Referring to
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In
In
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With reference to
Referring to
First, there is provided circuit board 10 employing resin film 11 having first face 11a and second face 11b, perforated with through hole 18 in which a semiconductor chip 2 having first face 2a and second face 2b will be placed. First face 11a has a conductive circuit pattern layer, including bond fingers 12, connection parts 13, ball lands 15 and the like formed thereon. The circuit pattern layer is selectively coated with cover coat 16. Bond fingers 12 and ball lands 15 are selectively exposed (
Referring to
Referring to
Referring to
Finally, as shown in
At a portion of the surface of resin film 11 which surrounds each through hole 18 within each substrip 110, bond fingers 12 are formed to be connected later to semiconductor chip 2 through electrical connection means 6. Ball lands 15 respectively connected to bond fingers 12 also are provided so that conductive balls 30 (e.g., solder balls) can be fused later thereto. Here, bond fingers 12 and ball lands 15 are defined as the conductive circuit pattern. The surfaces of resin film 11 and the circuit pattern are selectively coated with a high polymer resin cover coat 16. Bond fingers 12 and ball lands 15 exposed through cover coat 16. This cover coat 16 protects the circuit pattern from external unfavorable environments and provides rigidity to the entire circuit board strip 100 (with reference to
Referring to
Moreover, a conductive ground plane 113 having a predetermined area is formed on a surface of resin film 11 corresponding to the margin of main strip 115 of circuit board strip 100. Conductive ground plane 113 is exposed and electrically connected to ground ring 114. Ground plane 113 can be formed on both sides of resin film 11, differently from ground ring 114, and thus it is able to externally emit static electricity generated during the fabrication process through the mold. Here, although the circuit pattern, including bond fingers 12 and ball lands 15, ground ring 114 and ground plane 113, may be formed using a copper thin film, any conductive material can be used.
In general, the amount of variation due to the difference in the thermal expansion coefficients of the circuit board strip and cover lay tape, generated during wire bonding process or molding process, which require a high temperature condition, is represented by the expression DL=L×a, where “DL” indicates the amount of variation, “L” indicates the length of the tape, and “a” indicates a coefficient of variation. Accordingly, shortening of the cover lay tape's length can effectively prevent or mitigate the warpage of the circuit board strip during the high temperature processes. Further, one side of each cover lay tape 120 covers slot 111, which is formed between neighboring substrips 110. This allows for easy removal of removing cover lay tape 120 during the fabrication of the semiconductor package.
With reference to
In other embodiments, cutting pin hole line 121 may be formed covering the overall width (vertical width in the figure) of cover lay tape 120, or may be formed at a portion thereof including slot 111. Reference numeral 112 in
As mentioned above, circuit board strip 100 includes plural substrips 110, each of which has a plurality (e.g., 25) of interconnected circuit board 10 with through holes 18. Main strip 115 consists of a plurality (e.g., four) of interconnected substrips 110. Accordingly, tens to hundreds of semiconductor packages can be simultaneously fabricated using a single circuit board strip 100. Further, cover lay tape 120 is designed to be easily removed to minimize any damage to circuit board strip 100. Ground ring 114 and ground plane 113 improve the rigidity of circuit board strip 100 and dramatically reduce the effect of static electricity.
Closing means C also has runner gate RG formed at the face thereof on which semiconductor chip 2 is not mounted, i.e., the face opposite resin substrate 11 and chip 2. Runner gate RG may be formed at a portion corresponding to a runner R and gate G of a bottom die BD in a molding process (with reference to
After circuit board 10 is provided (for example, in the arrangement of circuit board strip 100), closing means C as described above is attached to one face thereof. Subsequently, the adhesion of semiconductor chip 2, wire bonding and encapsulation processes are performed. However, closing means C can be adhered to the circuit board in any step if it is previous to the encapsulation step. Runner gate RG of closing means C may be plated with gold whose adhesive strength to encapsulant 20 is smaller than that of the circuit board for smooth flow of encapsulant 20. Accordingly, runner gate RG is not directly formed on the circuit board 10 so that conductive balls 30 can be fused on the overall surface of the circuit board, which allows a greater number of conductive balls 30 to be mounted hereon than could be done using the prior art methods described above.
Adoption of the circuit board structure and molding method as described above allows the mounting of a large number of conductive balls on the circuit board of the semiconductor package. This improves the performance of the package and enables unrestricted designing of the circuit board. Further, since the width of the mold runner gate can be freely extended, there is no obstacle to molding packages built on a matrix type circuit board strip having tens to hundreds of units.
Accordingly, there is no need to form mold gate G or mold runner R on circuit board 10 or closing means C, resulting in reduction in the manufacturing cost and improvement in process efficiency. Further, the molding resin is poured into cavity CV through an orifice at the top of die TD so that the wire sweeping phenomenon is minimized. Accordingly, there is no obstacle to molding a matrix type circuit board strip having tens to hundreds of units.
Referring to
Referring to FIGS. 15B and 15B′, a closing means, in particular, cover lay tape 120, is attached to one face of each substrip 110 of circuit board strip 100 to close all through holes 18 formed therein. In the example shown in
In the example shown in FIG. 15B′, one-body cover lay tape 120 having a similar size to circuit board strip 100 adheres to one side of strip 100, having cutting pin hole line 121 at a portion corresponding to slot 111 located between neighboring substrips 110, cutting pin hole line 121 (
Subsequently, a semiconductor chip 2 is placed in each of through holes 18 formed in circuit board strip 100 in such a manner that one face thereof is attached to cover lay tape 120 (
Thereafter, cover lay tape 120 is removed from circuit board strip 100 (
Referring to
Moreover, the conductive ink film is formed on the exposed face of the semiconductor chip 2, the co-planar surface of the encapsulant 20, and a predetermined region of the co-planar face 11b of the circuit board 10, which allows for simultaneous marking and grounding of the semiconductor chip 2. Further, as described above, the matrix type circuit board strip 100 and the methods described herein allows tens to hundreds of semiconductor packages to be simultaneously fabricated using a single circuit board strip.
In addition, the circuit board strip 100 of the present invention employs plural separate cover lay tapes 120 which are attached to one to one relation with the substrips 110, or one-body cover lay 120 which covers all the substrips 110 and has the cutting pin hole line 121 corresponding to the slot 111 formed between neighboring substrips 110 to minimize any warpage caused by the difference in the thermal expansion coefficients between difference materials, and thus prevents a variety of defects that otherwise would be generated during the fabrication of the semiconductor package in advance. Further, in one embodiment, a punch perforates 150 through the slot 111 to easily and safely remove the cover lay tape 120, preventing or minimizing damages in the circuit board strip.
Moreover, the ground ring 114 or ground plane 113 is formed on the circuit board strip 100 so as to previously prevent the accumulation of static electricity in the step of molding. This effectively solves various problems including damage to the semiconductor chips and/or circuit patterns of the circuit board strip due to momentary discharging of static electricity. Furthermore, the runner gate RG and opening H into which the encapsulant is poured are not formed in the circuit board but in the closing means C, such as cover lay tape 120, to increase the number of the conductive balls as the input/output terminals, resulting in great freedom in the designing of the circuit pattern.
In addition, it is possible to form a large runner gate and opening into which the encapsulant is poured on the bottom side of the closing means instead in the circuit board (
Alternatively, as in
It will be apparent to those skilled in the art that various modifications and variations can be made in the semiconductor package and method of fabricating the same of the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Number | Date | Country | Kind |
---|---|---|---|
1999-16319 | May 1999 | KR | national |
1999-20939 | Jun 1999 | KR | national |
1999-37925 | Sep 1999 | KR | national |
1999-37928 | Sep 1999 | KR | national |
This application is a continuation of U.S. patent application Ser. No. 10/306,627, filed Nov. 26, 2002 U.S. Pat. No. 6,717,248, which was a continuation of U.S. patent application Ser. No. 09/566,069, filed May 5, 2000, now U.S. Pat. No. 6,515,356, issued on Feb. 4, 2003.
Number | Name | Date | Kind |
---|---|---|---|
3851221 | Beaulieu et al. | Nov 1974 | A |
4398235 | Lutz et al. | Aug 1983 | A |
4530152 | Roche et al. | Jul 1985 | A |
4567643 | Droguet et al. | Feb 1986 | A |
4707724 | Suzuki et al. | Nov 1987 | A |
4729061 | Brown | Mar 1988 | A |
4730232 | Lindberg | Mar 1988 | A |
4756080 | Thorp, Jr. et al. | Jul 1988 | A |
4763188 | Johnson | Aug 1988 | A |
4982265 | Watanabe et al. | Jan 1991 | A |
4996587 | Hinrichsmeyer et al. | Feb 1991 | A |
5001302 | Atsumi | Mar 1991 | A |
5012323 | Farnworth | Apr 1991 | A |
5025306 | Johnson et al. | Jun 1991 | A |
5040052 | McDavid | Aug 1991 | A |
5138438 | Masayuki et al. | Aug 1992 | A |
5140404 | Fogal et al. | Aug 1992 | A |
5157480 | McShane et al. | Oct 1992 | A |
5165067 | Wakefield et al. | Nov 1992 | A |
5198888 | Sugano et al. | Mar 1993 | A |
5200362 | Lin et al. | Apr 1993 | A |
5229647 | Gnadinger | Jul 1993 | A |
5241133 | Mullen, III et al. | Aug 1993 | A |
5273938 | Lin et al. | Dec 1993 | A |
5291061 | Ball | Mar 1994 | A |
5323060 | Fogal et al. | Jun 1994 | A |
5334875 | Sugano et al. | Aug 1994 | A |
5347429 | Kohno et al. | Sep 1994 | A |
5394010 | Tazawa et al. | Feb 1995 | A |
5422435 | Takiar et al. | Jun 1995 | A |
5426563 | Moresco et al. | Jun 1995 | A |
5432729 | Carson et al. | Jul 1995 | A |
5438224 | Papageorge et al. | Aug 1995 | A |
5450283 | Lin et al. | Sep 1995 | A |
5463253 | Waki et al. | Oct 1995 | A |
5473196 | De Givry | Dec 1995 | A |
5474957 | Urushima | Dec 1995 | A |
5474958 | Djennas et al. | Dec 1995 | A |
5491612 | Nicewarner, Jr. | Feb 1996 | A |
5495394 | Kornfeld et al. | Feb 1996 | A |
5495398 | Takiar et al. | Feb 1996 | A |
5502289 | Takiar et al. | Mar 1996 | A |
5514907 | Moshayedi | May 1996 | A |
5545922 | Golwalkar et al. | Aug 1996 | A |
5569625 | Yoneda et al. | Oct 1996 | A |
5581498 | Ludwig et al. | Dec 1996 | A |
5583378 | Marrs et al. | Dec 1996 | A |
5587341 | Masayuki et al. | Dec 1996 | A |
5594275 | Kwon et al. | Jan 1997 | A |
5604376 | Hamburgen et al. | Feb 1997 | A |
5614766 | Takasu et al. | Mar 1997 | A |
5620928 | Lee et al. | Apr 1997 | A |
5625221 | Kim et al. | Apr 1997 | A |
5637536 | Val | Jun 1997 | A |
5637912 | Cockerill et al. | Jun 1997 | A |
5640047 | Nakashima | Jun 1997 | A |
5646828 | Degani et al. | Jul 1997 | A |
5650593 | McMillan et al. | Jul 1997 | A |
5652185 | Lee | Jul 1997 | A |
5668405 | Yamashita | Sep 1997 | A |
5677569 | Choi et al. | Oct 1997 | A |
5682062 | Gaul | Oct 1997 | A |
5689135 | Ball | Nov 1997 | A |
5696031 | Wark | Dec 1997 | A |
5696666 | Miles et al. | Dec 1997 | A |
5715147 | Nagano | Feb 1998 | A |
5721452 | Fogal et al. | Feb 1998 | A |
5729051 | Nakamura | Mar 1998 | A |
5739581 | Chillara et al. | Apr 1998 | A |
5744827 | Jeong et al. | Apr 1998 | A |
5760471 | Fujisawa et al. | Jun 1998 | A |
5763939 | Yamashita | Jun 1998 | A |
5767528 | Sumi et al. | Jun 1998 | A |
5776798 | Quan et al. | Jul 1998 | A |
5777387 | Yamashita et al. | Jul 1998 | A |
5783870 | Mostafazadeh et al. | Jul 1998 | A |
5786239 | Ohsawa et al. | Jul 1998 | A |
5793108 | Nakanishi et al. | Aug 1998 | A |
5796586 | Lee et al. | Aug 1998 | A |
5798014 | Weber | Aug 1998 | A |
5801439 | Fujisawa et al. | Sep 1998 | A |
5815372 | Gallas | Sep 1998 | A |
5819398 | Wakefield | Oct 1998 | A |
5835355 | Dordi | Nov 1998 | A |
5835988 | Ishii | Nov 1998 | A |
5854741 | Shim et al. | Dec 1998 | A |
5859471 | Kuraishi et al. | Jan 1999 | A |
5861666 | Bellaar | Jan 1999 | A |
5866949 | Schueller | Feb 1999 | A |
5872025 | Cronin et al. | Feb 1999 | A |
5883426 | Tokuno et al. | Mar 1999 | A |
5885849 | DiStefano et al. | Mar 1999 | A |
5886412 | Fogal et al. | Mar 1999 | A |
5894108 | Mostafazadeh et al. | Apr 1999 | A |
5903052 | Chen et al. | May 1999 | A |
5909633 | Haji et al. | Jun 1999 | A |
5917242 | Ball | Jun 1999 | A |
5930599 | Fujimoto et al. | Jul 1999 | A |
5952611 | Eng et al. | Sep 1999 | A |
5973403 | Wark | Oct 1999 | A |
5977640 | Bertin et al. | Nov 1999 | A |
5986209 | Tandy | Nov 1999 | A |
5986317 | Wiese | Nov 1999 | A |
6001671 | Fjelstad | Dec 1999 | A |
6005778 | Spielberger et al. | Dec 1999 | A |
6013948 | Akram et al. | Jan 2000 | A |
RE36613 | Ball | Mar 2000 | E |
6034423 | Mostafazadeh et al. | Mar 2000 | A |
6034427 | Lan et al. | Mar 2000 | A |
6051886 | Fogal et al. | Apr 2000 | A |
6057598 | Payne et al. | May 2000 | A |
6060778 | Jeong et al. | May 2000 | A |
6072233 | Corisis et al. | Jun 2000 | A |
6072243 | Nakanishi | Jun 2000 | A |
6074898 | Ohsawa et al. | Jun 2000 | A |
6080264 | Ball | Jun 2000 | A |
6081037 | Lee et al. | Jun 2000 | A |
6093970 | Ohsawa et al. | Jul 2000 | A |
6099677 | Logothetis et al. | Aug 2000 | A |
6100804 | Brady et al. | Aug 2000 | A |
6107689 | Kozono | Aug 2000 | A |
6118184 | Ishio et al. | Sep 2000 | A |
6122171 | Akram et al. | Sep 2000 | A |
6126428 | Mitchell et al. | Oct 2000 | A |
6127833 | Wu et al. | Oct 2000 | A |
6133637 | Hikita et al. | Oct 2000 | A |
6160705 | Stearns et al. | Dec 2000 | A |
6172419 | Kinsman | Jan 2001 | B1 |
6180696 | Wong et al. | Jan 2001 | B1 |
6180881 | Isaak | Jan 2001 | B1 |
6184463 | Panchou et al. | Feb 2001 | B1 |
6198171 | Huang et al. | Mar 2001 | B1 |
6214641 | Akram | Apr 2001 | B1 |
6228676 | Glenn et al. | May 2001 | B1 |
6235554 | Akram et al. | May 2001 | B1 |
6242279 | Ho et al. | Jun 2001 | B1 |
6257857 | Lee et al. | Jul 2001 | B1 |
6258632 | Takebe | Jul 2001 | B1 |
6261869 | Radford et al. | Jul 2001 | B1 |
6262490 | Hsu et al. | Jul 2001 | B1 |
6268568 | Kim | Jul 2001 | B1 |
6271057 | Lee et al. | Aug 2001 | B1 |
6274404 | Hirasawa et al. | Aug 2001 | B1 |
6277672 | Ho | Aug 2001 | B1 |
6303998 | Murayama | Oct 2001 | B1 |
6313522 | Akram et al. | Nov 2001 | B1 |
6326696 | Horton et al. | Dec 2001 | B1 |
6329709 | Moden et al. | Dec 2001 | B1 |
6395578 | Shin et al. | May 2002 | B1 |
6399418 | Glenn et al. | Jun 2002 | B1 |
6404046 | Glenn et al. | Jun 2002 | B1 |
6448506 | Glenn et al. | Sep 2002 | B1 |
6452278 | DiCaprio et al. | Sep 2002 | B1 |
6459148 | Chun-Jen et al. | Oct 2002 | B1 |
6486537 | Liebhard | Nov 2002 | B1 |
6501184 | Shin et al. | Dec 2002 | B1 |
6515356 | Shin et al. | Feb 2003 | B1 |
6564454 | Glenn et al. | May 2003 | B1 |
6577013 | Glenn et al. | Jun 2003 | B1 |
Number | Date | Country |
---|---|---|
61117858 | May 1986 | JP |
62119952 | Jun 1987 | JP |
62126661 | Jun 1987 | JP |
64001269 | Jan 1989 | JP |
1071162 | Mar 1989 | JP |
4056262 | Feb 1992 | JP |
6-120364 | Apr 1994 | JP |
6-151645 | May 1994 | JP |
6-163751 | Jun 1994 | JP |
1996-0009776 | Apr 1996 | KR |
1997-0019144 | May 1997 | KR |
1999-0065599 | Aug 1999 | KR |
1999-0080278 | Nov 1999 | KR |
Number | Date | Country | |
---|---|---|---|
20040164411 A1 | Aug 2004 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 10306627 | Nov 2002 | US |
Child | 10785528 | US | |
Parent | 09566069 | May 2000 | US |
Child | 10306627 | US |