Patent Grant
8432045
This application claims priority from Korean Application No. 10-2010-0113272 filed Nov. 15, 2010, the disclosure of which is hereby incorporated herein by reference.
The present invention relates to formation of microelectronic devices, especially the formation of conductive pads.
Microelectronic devices generally comprise a thin slab of a semiconductor material, such as silicon or gallium arsenide, commonly called a die or a semiconductor chip. Semiconductor chips are commonly provided as individual, prepackaged units. In some unit designs, the semiconductor chip is mounted to a substrate or chip carrier, which is in turn mounted on a circuit panel, such as a printed circuit board.
The active circuitry is fabricated in a first face of the semiconductor chip (e.g., a front surface). To facilitate electrical connection to the active circuitry, the chip is provided with bond pads on the same face. The bond pads are generally made of a conductive metal, such as copper, or aluminum, around 0.5 μm thick. The bond pads could include a single layer or multiple layers of metal. The size of the bond pads will vary with the device type but will typically measure tens to hundreds of microns on a side.
Microelectronic devices are typically mounted in packages which include a dielectric element having a set of conductive elements thereon, such as terminals or other conductive pads. A packaged chip or in some cases a bare chip can be mounted to and electrically interconnected with the conductive pads of a circuit panel. Traditionally, the conductive pads on such dielectric element or circuit panel can be formed by rastering or photolithography. These processes can involve drawbacks. Laser formation of conductive pads by rastering can create pads with uneven surfaces, as each successive rastered segment partially overlaps the previous segment. Photolithography can be inefficient, particularly for small production quantities, pads, as it can be burdensome to design, test and correct a mask that is optimized for a particular application or system.
Size is a significant consideration in any physical arrangement of chips. The demand for more compact physical arrangements of chips has become even more intense with the rapid progress of portable electronic devices. Merely by way of example, devices commonly referred to as “smart phones” integrate the functions of a cellular telephone with powerful data processors, memory and ancillary devices such as global positioning system receivers, electronic cameras, and local area network connections along with high-resolution displays and associated image processing chips. Such devices can provide capabilities such as full internet connectivity, entertainment including full-resolution video, navigation, electronic banking and more, all in a pocket-size device. Complex portable devices require packing numerous chips into a small space. Moreover, some of the chips have many input and output connections, commonly referred to as “I/O's.” These I/O's must be interconnected with the I/O's of other chips. The interconnections should be short and should have low impedance to minimize signal propagation delays. The components which form the interconnections should not greatly increase the size of the assembly. Similar needs arise in other applications as, for example, in data servers such as those used in internet search engines. For example, structures which provide numerous short, low-impedance interconnects between complex chips can increase the bandwidth of the search engine and reduce its power consumption.
Despite the advances that have been made or proposed in the fabrication of components with conductive pads further improvements can still be made.
A first aspect of the present invention is an assembly including a first component including a dielectric region having an exposed surface; a conductive pad at the surface permitting electrical interconnection of the first component with a second component, the conductive pad defined by a conductive element having at least a portion extending in at least one of an oscillating or spiral path along the surface such that a theoretical straight line intersects at least three segments of the path, and at least two adjacent segments of the conductive element are separated by a portion of the surface not covered by the conductive element, the conductive element extending from the surface to a top surface at a height above the surface and having a length along the surface that is at least ten times the height; and an electrically conductive bonding material having a melting temperature below 300° C. joined to the conductive pad and bridging the exposed portion of the surface between the at least two adjacent segments, wherein the conductive element has edge surfaces extending away from the top surface and the electrically conductive bonding material contacts the top and edge surfaces of the conductive element.
In accordance with certain embodiments of this first aspect, the assembly may further include the second component having a terminal joined to the conductive pad through the electrically conductive bonding material. The path of the conductive element may not overlap or cross itself. The path of the conductive element may at least overlap or cross itself. The conductive element may occupy less than seventy-five percent of an area of the surface of the dielectric region within a circular boundary defined by outermost edges of the pad. The first component may further include a substrate having a substrate surface, the dielectric region at least partly overlying the substrate surface. The substrate surface may be a top surface of the substrate, the substrate further having a bottom surface remote from the top surface, an opening extending between the top and bottom surfaces, and a second conductive element disposed at the bottom surface, the pad being electrically connected to the second conductive element through the opening in the substrate and an opening in the dielectric region.
The surface of the dielectric region may be exposed at the exposed surface of the first component, the first component further having a bottom surface remote from the exposed surface, an opening extending between the top and bottom surfaces, and a second conductive element disposed at the bottom surface, the pad being electrically connected to the second conductive element through the opening in the first component and an opening in the dielectric region. The exposed surface may be a rear face, and the first component may have a front face remote from the rear face and an opening extending between front and rear faces, and wherein the conductive element is exposed at the rear face and at least a portion of the conductive element extends along an interior surface of the opening. The first component may have at least one contact at the front face, wherein electrical connection between the at least one contact and the conductive element may be made through the opening. The first component may be a microelectronic element having a plurality of active semiconductor devices adjacent the front face.
The first component may be a microelectronic element having a plurality of contacts at the surface, and the assembly may further include a trace electrically connecting the conductive pad with at least one of the plurality of contacts. The first component may be a dielectric element having a plurality of traces thereon, wherein the conductive pad is electrically connected with at least one of the traces. The surface may be a first surface, the first component may be a microelectronic element having a plurality of contacts at a second surface remote from the first surface, and the conductive pad may be electrically connected with at least one of the plurality of contacts. The electrically conductive bonding material may be solder. The pad may include a surface layer including at least one of nickel or gold, and the electrically conductive bonding material contacts the surface layer. A system may include an assembly as described above and one or more other electronic components electrically connected to the assembly. The system may further include a housing, the assembly and the other electronic components being mounted to the housing.
A second aspect of the present invention is an assembly including a first component including a dielectric region having an exposed surface; a continuous groove extending along the surface and having at least a portion extending in a curved path along the surface, the groove having a floor disposed below the surface; a conductive pad exposed at the surface permitting electrical interconnection of the first component with a second component, the conductive pad defined by a conductive element having cross-sectional dimensions at least partly defined by the groove, extending from the floor of the groove to a height above the floor, and having at least a portion extending in at least one of an oscillating or spiral path along the surface such that a theoretical straight line intersects at least three segments of the path, the conductive element having at least two adjacent segments separated by an exposed portion of the surface of the dielectric region, and the conductive element having a length along the surface that is at least ten times greater than the height; and a an electrically conductive bonding material having a melting temperature below 300° C. joined to the conductive pad and bridging the exposed portion of the surface between the at least two adjacent segments.
In accordance with certain embodiments of this second aspect, the first component may be a microelectronic element having a plurality of contacts at the surface thereof and a plurality of active semiconductor devices adjacent the surface, and the assembly may further include a trace electrically connecting the conductive pad with at least one of the plurality of contacts. The first component may be a dielectric element having a plurality of traces thereon, wherein the conductive pad may be electrically connected with at least one of the traces. The surface may be a first surface, the first component may be a microelectronic element having a plurality of contacts at a second surface remote from the first surface, and a plurality of active semiconductor devices adjacent the second surface, and the conductive pad may be electrically connected with at least one of the plurality of contacts.
The assembly may further include the second component, the electrically conductive bonding material joining the conductive pad with a terminal of the second component. The electrically conductive bonding material may be solder. The first component may include an opening extending between the front and rear faces and at least a portion of the conductive element extending along an interior surface of the opening, at least a portion of the groove extending along the interior surface, the conductive element extending within the portion of the groove. Electrical connection between the at least one contact and the conductive element may be made through the opening. The height of the conductive element may be greater than a distance between the floor and the surface of the dielectric region. The height of the conductive element may be equal to or less than a distance between the floor and the surface of the dielectric region.
Outermost edges of the pad may define a circular or square-shaped boundary with respect to the surface. The path of the conductive element may not overlap or cross itself. The path of the conductive element may at least overlap or cross itself. The conductive element may occupy less than seventy-five percent of the surface area of the surface within the boundary. The height of the conductive element may be greater than a distance between the floor and the surface such that the conductive element has top surface exposed at the surface of the dielectric region and edge surfaces extending away from the top surface, the electrically conductive bonding material contacting the top and edge surfaces of the conductive element. The pad may include a surface layer including at least one of nickel or gold.
The surface of the dielectric region may be exposed at the exposed surface of the first component, the first component may further include a bottom surface opposed from the exposed surface, an opening extending between the exposed and bottom surfaces, and a second conductive element overlying the bottom surface, the pad being electrically connected to the second conductive element through the opening in the first component and an opening in the dielectric region. The dielectric region may include a solder mask. The dielectric region may be a polymeric material. The dielectric region may be an inorganic material. The dielectric region may include two or more stacked layers of dielectric materials, at least two adjacent layers thereof including different materials. A system may include an assembly as described above and one or more other electronic components electrically connected to the assembly. The system may further include a housing, the assembly and the other electronic components being mounted to the housing.
A third aspect of the present invention is a method of forming a conductive structure on a first component, including (a) forming a continuous groove extending along an exposed surface of a dielectric region of a first component by removing a portion of the dielectric region, the groove having at least a portion extending in a curved path, the groove having a floor disposed below the surface; (b) forming a conductive pad exposed at the surface permitting electrical interconnection of the first component with a second component, the conductive pad defined by a conductive element having cross-sectional dimensions and a path at least partly defined by the path of the groove and extending from the floor of the groove to a height above the floor, the conductive element having at least a portion extending in at least one of an oscillating or spiral path along the surface such that a theoretical straight line intersects at least three segments of the path, the conductive element having at least two adjacent segments separated by a portion of the surface, the conductive element having a length along the surface that is at least ten times greater than the height, the conductive element at least partially embedded in the groove; and (c) performing one of: applying an electrically conductive bonding material having a melting temperature below 300° C. to the conductive pad, the electrically conductive bonding material bridging the exposed portion of the surface between the at least two adjacent segments; or assembling the component with the second component with an electrically conductive bonding material having a melting temperature below 300° C. joining the conductive pad to a conductive pad of the second component, the electrically conductive bonding material bridging the exposed portion of the surface of the dielectric region between the at least two adjacent segments.
In accordance with certain embodiments of this third aspect, the height of the conductive element may be greater than a distance between the floor and the surface. The conductive element may include an exposed top surface parallel to the surface of the dielectric region and exposed vertical surfaces extending between the top surface thereof and the surface of the dielectric region, the electrically conductive bonding material being in contact with the top and vertical surfaces of the conductive element. The height of the conductive element may be equal to or less than a distance between the floor and the surface. A distance between the floor and the surface may be greater than a width of the conductive element.
Step (b) may include forming the conductive element such that it does not overlap or cross itself. Step (b) may include forming the conductive element such that it at least overlaps or crosses itself. Step (c) may include forming a catalyst layer overlying at least the floor of the groove, and then selectively depositing a metal onto an area where the catalyst layer may be present to form the conductive element. The electrically conductive bonding material may extend at least between outermost edges of the pad of the first component. Step (b) may include plating a surface layer including at least one of nickel or gold exposed at a surface of the pad of the first component.
The first component may include a second region, the dielectric region overlying the second region when step (a) and step (b) are performed. The substrate may have a bottom surface opposed from the top surface, an opening extending between the top and bottom surfaces, and an conductive element overlying the lower surface, the pad of the first component being electrically connected to the conductive element through the opening in the substrate and an adjacent opening in the dielectric region.
Step (a) may be performed by processing including at least one of: directing a laser toward at least the surface to ablate the portion of the dielectric region, mechanical milling, or sandblasting. Step (b) may include positioning a metal stencil to overlie the dielectric region, the metal stencil having at least one opening, and removing the portion of the dielectric region exposed through the at least one opening by sandblasting. Step (b) may include removing a portion of the dielectric region by mechanical milling. Step (b) may include depositing a conductive material overlying the surface of the dielectric region and at least a portion of the groove, and removing the conductive material overlying at least a portion of the surface to expose the surface of the dielectric region.
Step (c) may include applying the electrically conductive bonding material to the conductive pad, the electrically conductive bonding material bridging the exposed portion of the surface between the at least two adjacent segments. Step (c) may include assembling the component with the second component with the electrically conductive bonding material joining the conductive pad to the conductive pad of the second component, the electrically conductive bonding material bridging the exposed portion of the surface of the dielectric region between the at least two adjacent segments.
A fourth aspect of the present invention is a method of forming a first component assembly, the method including (a) plating a conductive pad onto a planar surface of a mandrel, the conductive pad defined by a conductive element extending along the surface and having at least a portion extending in a curved path along the surface; (b) at least partially embedding the conductive pad into a dielectric material; (c) removing the mandrel to form the first component having a dielectric region and the conductive pad exposed at a surface of the dielectric region for permitting electrical interconnection of the component with a second component, the conductive element of the conductive pad having at least a portion extending in at least one of an oscillating or spiral path along the surface of the dielectric region such that a theoretical straight line intersects at least three segments of the path, the conductive element having at least two adjacent segments thereof separated by a portion of the surface of the dielectric region, at least a portion of the surface of the dielectric region being exposed between the at least two segments, the conductive element having a length along the surface of the dielectric region that is at least ten times greater than the height; and (d) performing one of: applying an electrically conductive bonding material having a melting temperature below 300° C. to the conductive pad, the electrically conductive bonding material bridging the exposed portion of the surface between the at least two adjacent segments; or assembling the component with the second component with an electrically conductive bonding material having a melting temperature below 300° C. joining the conductive pad to a conductive pad of the second component, the electrically conductive bonding material bridging the exposed portion of the surface of the dielectric region between the at least two adjacent segments.
In accordance with certain embodiments of this fourth aspect, the mandrel may include a metal sheet, and step (c) may include etching the metal sheet to expose the pad of the first component. Step (b) may include embedding the conductive pad of the first component into an at least partially cured dielectric region which includes the dielectric material. Step (b) may include depositing the dielectric material to contact at least a portion of the conductive pad of the first component. Step (d) may include applying the electrically conductive bonding material to the conductive pad, the electrically conductive bonding material bridging the exposed portion of the surface between the at least two adjacent segments. Step (d) may include assembling the component with the second component with the electrically conductive bonding material joining the conductive pad to a conductive pad of the second component, the electrically conductive bonding material bridging the exposed portion of the surface of the dielectric region between the at least two adjacent segments.
A fifth aspect of the present invention is a method of forming a component assembly, the method including (a) providing a lead frame having a conductive pad, the conductive pad defined by a conductive element extending along the surface and having at least a portion extending in a curved path along the surface; (b) at least partially embedding the lead frame in a dielectric material, wherein the conductive pad may be exposed at a surface of the dielectric material for permitting electrical interconnection of the component with a second component, the conductive element of the conductive pad having at least a portion extending in at least one of an oscillating or spiral path along the surface of the dielectric region such that a theoretical straight line intersects at least three segments of the path, the conductive element having at least two adjacent segments thereof separated by a portion of the surface of the dielectric region, at least a portion of the surface of the dielectric region being exposed between the at least two segments, the conductive element having a length along the surface of the dielectric region that may be at least ten times greater than the height; and (c) performing one of: applying an electrically conductive bonding material having a melting temperature below 300° C. to the conductive pad, the electrically conductive bonding material bridging the exposed portion of the surface between the at least two adjacent segments; or assembling the component with the second component with an electrically conductive bonding material having a melting temperature below 300° C. joining the conductive pad to a conductive pad of the second component, the an electrically conductive bonding material bridging the exposed portion of the surface of the dielectric region between the at least two adjacent segments.
In accordance with certain embodiments of this fifth aspect, step (c) may include applying the conductive bonding material to the conductive pad, the conductive bonding material bridging the exposed portion of the surface between the at least two adjacent segments. Step (c) may include assembling the component with the second component with the electrically conductive bonding material joining the conductive pad to a conductive pad of the second component, the electrically conductive bonding material bridging the exposed portion of the surface of the dielectric region between the at least two adjacent segments.
As used in this disclosure, a statement that an electrically conductive element is “exposed at” a surface of a dielectric element indicates that the electrically conductive element is available for contact with a theoretical point moving in a direction perpendicular to the surface of the dielectric element toward the surface of the dielectric element from outside the dielectric element. Thus, a terminal or other conductive element which is exposed at a surface of a dielectric element may project from such surface; may be flush with such surface; or may be recessed relative to such surface and exposed through a hole or depression in the dielectric.
A first embodiment of an assembly 100, shown in
Groove 124 can be formed by removing a portion of dielectric region 120, which in one example can be done by laser ablation by directing a laser at surface 122. For example, a system, e.g., a computer, can be used to move an illumination spot produced by the laser to different locations of surface 122. The laser ablates or otherwise removes a portion of a sacrificial layer (if present) and a portion of dielectric region 120. Groove 124 is depicted with floor 126 being curved or rounded, though other cross-sections, such as rectangular, may be formed either purposefully or as a result of the constraints of using a laser.
Though not depicted, the sacrificial layer may be provided overlying surface 122 of dielectric region 120 prior to the step of ablating with the laser. The sacrificial layer typically can be a polymeric material and has an exposed surface that conforms to a contour of surface 122. The sacrificial layer can be applied by spray-coating, spin-coating, dipping, or other method. In a particular embodiment, the sacrificial layer is removable by chemical means, such as by using an etchant. In one embodiment, the sacrificial layer is removable by peeling. While a sacrificial layer can be used, formation of groove 124 does not require the use of a sacrificial layer.
After forming the groove, a conductive element is formed which extends in a direction of the groove along surface 122. In one embodiment, catalyst layer can be formed overlying the exposed portions of dielectric region 120 and/or the sacrificial layer, if present. The catalyst layer overlies at least floor 126 of groove 124 and is typically comprised of a thin layer of metal particles which can catalyze a subsequent metal deposition process, for example, a subsequent aqueous deposition process used in plating metal layers thereon. In one example, the catalyst layer can include platinum particles. In one example, the catalyst layer can be formed by providing a liquid containing the catalyst particles to the exposed surfaces of the sacrificial layer, for example, by dipping the substrate in a bath containing the catalyst particles. The catalyst layer typically uniformly coats first component 105. The sacrificial layer, if present, is removed from first component 105, thereby also removing the catalyst layer disposed on the sacrificial layer. In this way, after the sacrificial layer has been removed the catalyst layer is disposed only in groove 124. If no sacrificial layer is present, the catalyst layer can be deposited only in or along areas of first component 105 that are to be plated to form a conductive element, which, for example, can be only the area in groove 124.
A seed layer can then be selectively deposited onto the catalyst layer, and the process can continue with the deposition of one or more metal layers, which can include any of or all of an adhesion layer, a barrier metal layer, and a primary metal layer. Typically, such seed layer, adhesion layer, barrier metal layer or primary metal layer is deposited by plating. The result of this process of selectively depositing a metal onto an area where the catalyst layer is present is the formation of a conductive element 132, as seen in
In a variation of the above-described embodiment, the sacrificial layer can be removed after one or more or the metal layers is deposited which make up conductive element 132. For example, in one embodiment, the sacrificial layer can be removed after depositing any or all of a seed layer, an adhesion layer, a barrier metal layer or other metal layer provided before the primary metal layer is deposited. In such case, the sacrificial layer may be removed in a “lift-off” process from the dielectric region, such as by etching, peeling or other method. Then, after removing the sacrificial layer, the metal deposition can continue with the deposition of one or more subsequent metal layers including the primary metal layer to form conductive element 132.
As seen in
Pad 134 permits electrical interconnection of first component 105 with a second component 107, shown in
As shown in
First component 105 is shown and described in one configuration, although other configurations of assembly 100 and first component 105 may be realized by the present invention and will be described more thoroughly below. For example, first component 105 includes conductive element 132 that has a spiral path (as shown in
In another method of forming pad 134, a conductive material can be deposited overlying surface 122 of dielectric region 120 and at least a portion of groove 124. Certain of the conductive material overlying at least a portion of surface 122 can then be removed to expose surface 122 of dielectric region 120.
After pad 134 is formed, an electrically conductive bonding material 140 can be deposited at least partly overlying pad 134, as shown in
As shown in
In accordance with the present invention, embodiments of the first component can be comprised of a single dielectric region, can include a substrate underlying a dielectric region, or can comprise more than one dielectric regions or layers in a stacked formation. The dielectric region can comprise two or more stacked layers of dielectric materials, with at least two adjacent layers thereof including different materials. The dielectric region typically includes one or more dielectric materials such as silicon dioxide in any form, other dielectric compound of silicon, a polymeric material, or other inorganic dielectric material, such as a ceramic material, among others. A substrate according to the present invention typically consists essentially of a monocrystalline semiconductor material such as, for example, silicon, an alloy of silicon with another material, one or more III-V semiconductor compounds such as gallium arsenide among others, or one or more II-VI semiconductor compounds. In a particular embodiment, the substrate can be a silicon-on-insulator substrate which includes a buried oxide (“BOX”) layer that separates an active semiconductor device layer at a front face from a bulk semiconductor region at a rear face.
In an embodiment shown in
Another embodiment of a first component 705 is shown in
Pad 734 allows for electrical connection between chip 750 and an external component that can be joined thereto as described above with reference to
A further embodiment is depicted in
In certain embodiments, mandrel 860 may be comprised of one or more metal sheets, and the step of removing mandrel 860 is conducted by etching away each metal sheet to expose the pad 834. In other embodiments, dielectric region 820 may not be pre-formed, but rather, a dielectric material may be deposited onto surface 862 of mandrel 860, and then mandrel 860 removed to form first component 805.
In any or all of the embodiments described herein, a first component having a spiral or oscillating path conductive pad as described above, or formed according to a technique described above, can be joined or electrically connected to a second component with an electrically conductive bonding material contacting surfaces of the conductive pad in a manner as described above, and contacting a terminal of the second component. The bonding material bridges the portion of the surface of the dielectric region between the at least two adjacent segments of the conductive pad. The bonding material can be applied to such conductive pad before assembling the first component with the second component, in which case the bonding material on the conductive pad will form part of the joint or electrically conductive connection between the first and second components. Alternatively, before assembling the first and second components the bonding material can be applied to a terminal of the second component and not applied to such conductive pad. During the assembling step, the bonding material from the terminal of the second component will flow onto surfaces of the conductive pad and will then bridge the portion of the surface of the dielectric region between the at least two adjacent segments. In one example, an electrically conductive joint can be formed by heating a bond metal such as solder to a temperature sufficient to cause the bond metal to flow, the bond metal then contacting surfaces of such pad and a terminal of the second component juxtaposed therewith. The bond metal then re-solidifies again to form the electrically conductive joint. In another example, a bonding material can be applied separately to such conductive pad and to a terminal of a second component, after which the first and second components can be brought together and joined as described above.
A first component according to the present invention can be a microelectronic element having a plurality of active semiconductor devices adjacent the surface of the dielectric region. In alternate embodiments, the first component can be a microelectronic element having a plurality of contacts at its surface, and can further include a trace electrically connecting the conductive pad with at least one of the plurality of contacts. In still other embodiments, the first component can be a microelectronic element having a plurality of contacts at surface, and the conductive pad can be electrically connected with at least one of the plurality of contacts.
In certain embodiments of the present invention, a substrate consists essentially of monocrystalline semiconductor material, and a dielectric region overlying the substrate includes a layer of dielectric material conforming to a contour of a sloped surface of the substrate. In alternative embodiments, the substrate may consist essentially of dielectric material, or may include a region consisting essentially of conductive material with a dielectric region overlying the region of conductive material.
The use of a laser to form conductive elements as an alternative to photolithography may permit the layout of the elements to be changed more easily. With the present method, changing the layout may only require a change to a computer program which controls the movement of the laser, since the laser's movement determines the shape and dimensions of the conductive element. This contrasts with the time and expense required to create and verify a photomask used to form traces by photolithography.
The embodiments described above can include grooves and apertures formed such as by a direct writing method, e.g., using a laser to define a path. However, other methods can be used to form such features according to the present invention. Mechanical milling can be utilized, wherein a small diameter element, which can be referred to as a hammer, repeatedly strikes the sacrificial layer, if present, and the dielectric region to loosen and remove such material to form a groove or aperture. Another method that can be utilized is a sandblasting technique together with a metal stencil, which is positioned to overlie sacrificial layer and/or dielectric region and includes openings that are shaped in accordance with a desired final pattern of the conductive elements. A sandblasting technique is employed by directing a sand-based material at the dielectric region in a direction such that the sand-based material will strike the sacrificial layer and/or the dielectric region in the areas exposed through the openings. One or more grooves are thereby formed in the dielectric region. These particular techniques of mechanical milling and sand-blasting can be considered “non-photolithographic techniques” because they do not rely primarily on patterning using exposure of a photoresist through a photomask. Description of such patterning techniques and other structures which can be formed therewith is found in commonly owned U.S. application Ser. No. 12/842,669 filed Jul. 23, 2010, the disclosure of which is incorporated by reference herein. The remaining steps of the method of constructing a structure in accordance with the present invention are as set forth above.
In one embodiment, the methods herein disclosed can achieve a top surface of a pad having greater planarity than those formed by existing methods, such as rastering. As the pads according to the present invention typically include segments separated by gaps, the planarity of the top surface can be achieved by top surfaces of adjacent segments being co-planar or substantially defining a single plane.
It is noted that certain methods of removing sacrificial layer require the sacrificial layer to be more brittle in nature. For instance, the sandblasting technique described above is more effectively carried out with a more brittle sacrificial layer, so that the sand-based material does not become embedded in the sacrificial layer rather than breaking and removing same.
In particular embodiments discussed above, the resulting assemblies can be or include a microelectronic unit having active circuit elements, e.g., transistors, diodes, or other microelectronic or microelectromechanical devices therein, among others, and can have traces which are formed by one or more of the techniques, e.g., even non-photolithographic techniques, as described above. Also in certain embodiments discussed above, the resulting assemblies can be or include an interposer structure having a substrate of at least one of semiconductor or dielectric material which has traces formed as described above but which does not have active circuit elements therein. An interposer structure or component in accordance such embodiments can have conductive elements exposed at one or more of the front and rear faces for interconnection with one or more external components such as, for example, a microelectronic element, substrate or circuit panel.
In particular embodiments discussed above, the resulting assemblies can be or include a microelectronic unit having active circuit elements, e.g., transistors, diodes, or other microelectronic or microelectromechanical devices therein, among others, and have traces formed by one or more of the methods described above. Also in certain embodiments discussed above, the resulting assemblies can be or include an interposer structure having a substrate of at least one of semiconductor or dielectric material which has traces formed by one or more of the above-described methods, but which does not have active circuit elements therein. An interposer structure or component in accordance such embodiments can have conductive elements exposed at one or more of the front and rear faces for interconnection with one or more external components such as, for example, a microelectronic element, substrate or circuit panel.
The structures discussed above provide extraordinary three-dimensional interconnection capabilities. These capabilities can be used with chips of any type. Merely by way of example, the following combinations of chips can be included in structures as discussed above: (i) a processor and memory used with the processor; (ii) plural memory chips of the same type; (iii) plural memory chips of diverse types, such as DRAM and SRAM; (iv) an image sensor and an image processor used to process the image from the sensor; (v) an application-specific integrated circuit (“ASIC”) and memory. The structures discussed above can be utilized in construction of diverse electronic systems. For example, a system 900 in accordance with a further embodiment of the invention includes a structure 906 as described above in conjunction with other electronic components 908 and 910. In the example depicted, component 908 is a semiconductor chip whereas component 910 is a display screen, but any other components can be used. Of course, although only two additional components are depicted in
Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 10-2010-0113272 | Nov 2010 | KR | national |
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