Connecting device for eletronic components

Abstract

A connecting device for the electrically conductive connection of electronic components and a substrate. The connecting device is formed as a film composite formed of at least one insulating film and at least two electrically conductive films disposed on opposite sides of the insulating film. The film composite is formed as a layer construction of a conductive film alternating with an insulating film, wherein at least one conductive film is structured and thus forms conductor tracks. Furthermore, at least one conductive film of a main area of the film composite is made of a first metal and has at least one film section having a layer of a second metal that is thinner in comparison with the thickness of the first layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings, like reference numerals denote similar elements.

FIG. 1 is a cross-section of a first embodiment of a connecting device in accordance with the invention, arranged with a substrate and components.

FIG. 2 is a top plan view of a second embodiment of a connecting device in accordance with the invention showing a detail of the first main area thereof.

FIG. 3 shows a further embodiment of a connecting device according to the invention in an arrangement with an unpackaged component in a plan view showing a detail of the second main area thereof.

FIG. 4 shows a detail of a still further, five-layer, embodiment of a connecting device according to the invention, with only the relevant layers illustrated for clarity.

Claims

1. A connecting device for electrically conductively connecting electronic components and at least one substrate, wherein the connecting device comprises: a first electrically conductive film, said first electrically conductive film being formed of a first metal, and having a first thickness;a second electrically conductive film, said second electrically conductive film being formed of a second metal, and having a second thickness, said first and second thicknesses being not substantially the same; anda first insulating film disposed between said first and second electrically conductive films;said first and second electrically conductive films and said first insulating film together forming a film composite;wherein at least one of said first and second electrically conductive films is structured and thereby forms at least one conductor track.

2. The connecting device of claim 1, wherein said insulating film has at least one cutout for permitting the electrically conductive connection of adjacent conductive films.

3. The connecting device of claim 1, wherein said film composite has at least one embossing bump.

4. The connecting device of claim 3, wherein an unpackaged power semiconductor component is spot welded to at least one of said embossing bumps on a first main area thereof.

5. The Connecting device according to claim 3, wherein said embossing bump is disposed in a film section having a layer of said second metal.

6. The connecting device of claim 5, wherein an unpackaged power semiconductor component is spot welded to at least one of said embossing bumps on a first main area thereof.

7. The connecting device of claim 5, wherein said at least one conductor track is soldered to said at least one embossing bump.

8. The connecting device of claim 1, wherein unpackaged components are attached to a second main area of said film composite by at least one of soldering and adhesive bonding.

9. The connecting device of claim 1, wherein packaged components are attached to a second main area of said film composite by at least one of soldering and adhesive bonding.

10. The connecting device of claim 9, wherein said unpackaged components are electrically conductively connected to said at least conductor track by at least one thin wire bonding connection.

11. The connecting device of claim 1, wherein said second electrically conductive film is formed by cold gas spraying.

12. The connecting device of claim 1, wherein said second electrically conductive film is formed by electrodeposition.

13. The connecting device of claim 1, wherein said first and second metals are different.

14. The connecting device of claim 13, wherein said first metal is aluminum, and said second metal is copper.

15. The connecting device of claim 1, wherein said first thickness is between about 50 μm and about 400 μm.

16. The connecting device of claim 15, wherein said second thickness is between about 20 μm and about 100 μm.

17. The connecting device of claim 1, wherein said first thickness is at least about twice as great as said second thickness.

18. The connecting device of claim 1, further comprising: a third electrically conductive film; anda second insulating film;wherein said first, second and third electrically conducting films and said first and second insulating films together form said film composite;wherein said second insulating film is disposed between said second and third electrically conducting films, forming thereby alternating layers of electrically conducting film and insulating film in said film composite.

19. The connecting device of claim 18, wherein said third electrically conductive film has a third thickness, greater than said second thickness.

20. The connecting device of claim 18, wherein said second electrically conductive film includes a connection for receiving a pre-defined potential during operation of said connecting device, to maintain said second electrically conductive film at said pre-defined potential.