Claims
- 1. A method of growing an elemental thin film on a substrate from vapor phase reactants in an atomic layer deposition (ALD) process comprising:
introducing a vapor phase metal source compound into a reaction space containing the substrate such that no more than one molecular layer of the metal source compound adsorbs on the substrate; removing any vapor phase compounds from the reaction space; contacting the adsorbed metal source compound on the substrate with a vapor phase boron source compound such that no more than one atomic layer of elemental metal is formed on the substrate; and removing any gaseous compounds from the reaction space.
- 2. The method of claim 1, wherein the ALD process is repeated to form an elemental thin film of a desired thickness.
- 3. The method of claim 2, wherein the ALD process is repeated until an elemental thin film with a thickness of from one atomic layer to 1000 nm is formed.
- 4. The method of claim 1, wherein the boron source compound reduces the adsorbed metal source compound into its elemental state.
- 5. The method of claim 4, wherein gaseous reaction byproducts are formed by the reduction of the adsorbed metal source compound into its elemental state.
- 6. The method of claim 1, wherein the metal source compound and boron source compound are fed into the reaction chamber with the aid of an inert carrier gas.
- 7. The method of claim 1, further comprising feeding an inert gas pulse to the reaction chamber after each pulse of metal source compound and borane compound.
- 8. The method of claim 7, further comprising adding a mild reducing agent to the inert gas pulse.
- 9. The method of claim 8, wherein the inert gas pulse comprises 0.5% to 1% of the mild reducing agent by volume.
- 10. The method of claim 9, wherein the mild reducing agent is hydrogen.
- 11. The method of claim 1, wherein the boron source compound contains at least one carbon atom.
- 12. The method of claim 11, wherein the metal source compound comprises a metal selected from the group consisting of Cu, Ag, Au, Pd, Pt, Rh and Ir.
- 13. The method of claim 11, wherein the boron source compound is selected from the group consisting of carboranes according to the formula C2BnHn+x, wherein n is an integer from 1 to 10 and x is an even integer.
- 14. The method of claim 13, wherein the boron source compound is selected from the group consisting of closo-carboranes of the formula C2BnHn+2, nido-carboranes of the formula C2BnHn+4 and arachno-carboranes of the formula C2BnHn+6, wherein n is an integer from 1 to 10.
- 15. The method of claim 11, wherein the boron source compound is selected from the group consisting of amine-borane adducts according to the formula R3NBX3 wherein R is linear or branched C1 to C10 or H and X is linear or branched C1 to C10, H or a halogen.
- 16. The method of claim 11, wherein the boron source compound is selected from the group consisting of aminoboranes, wherein one or more of the substituents is an amino group according to the formula R2N, wherein R is linear or branched C1 to C10 or a substituted or unsubstituted aryl group.
- 17. The method of claim 11, wherein the boron source compound is selected from the group consisting of alkyl borons and alkyl boranes, wherein the alkyl is a linear or branched C1 to C10 alkyl.
- 18. The method of claim 1, wherein the boron source compound contains no carbon atoms.
- 19. The method of claim 18, wherein the metal source compound comprises at least one metal selected from the group consisting of Cu, Ag, Au, Pd, Pt, Rh, Ir, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W.
- 20. The method of claim 18, wherein the boron source compound is selected from the group consisting of boranes of formula BnHn+x, wherein n is an integer from 1 to 10 and x is an even integer.
- 21. The method of claim 20, wherein the boron source compound is selected from the group consisting of nido-boranes of formula BnHn+4, arachno-boranes of the formula BnHn+6, hypho-boranes of the formula BnHn+8 and conjuncto-boranes BnHm, wherein n is an integer from 1 to 10 and m is an integer from 1 to 10 that is different from n.
- 22. The method of claim 18, wherein the boron source compound is selected from the group consisting of boron halides and complexes thereof.
- 23. The method of claim 22, wherein the boron source compound is selected from the group consisting of boron halides having a high boron/halide ratio.
- 24. The method of claim 23, wherein the boron source compound is selected from the group consisting of B2F4, B2Cl4 and B2Br4.
- 25. The method of claim 18, wherein the boron source compound is selected from the group consisting of halogenoboranes of the formula BnXn, wherein X is Cl or Br and n is 4 or an integer from 8 to 12 when X is Cl or n is an integer from 7 to 10 when X is Br.
- 26. The method of claim 1, wherein the boron source compound is selected from the group consisting of cyclic borazine and volatile derivatives thereof.
- 27. The method of claim 1, wherein the boron source compound is in the form of a complex.
- 28. The method of claim 1, wherein the metal source compound comprises a metal selected from the group consisting of Cu, Ag, Au, Pd, Pt, Rh, Ir, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W.
- 29. The method of claim 28, wherein the metal source compound is a tungsten compound.
- 30. The method of claim 29, wherein the tungsten compound is tungsten hexafluoride (WF6).
- 31. The method of claim 1, wherein the elemental thin film forms an electrodeposition seed layer in an integrated circuit metallization scheme.
- 32. The method of claim 31, wherein the seed layer consists essentially of tungsten metal.
- 33. The method of claim 1, wherein the reaction space is maintained at a constant temperature during the ALD process.
- 34. The method of claim 33, wherein the temperature is between about 100° C. and about 700° C.
- 35. The method of claim 34, wherein the temperature is between about 250° C. and about 500° C.
- 36. The method of claim 1, wherein the reaction space is maintained at a constant pressure during the ALD process.
- 37. The method of claim 36, wherein the pressure is between about 0.01 mbar and about 20 mbar.
- 38. A method of growing an elemental metal thin film in a dual damascene structure by an atomic layer deposition (ALD) process comprising:
introducing a vapor phase metal source compound into a reaction space containing the substrate with an inert carrier gas; contacting the substrate with the vapor phase metal source compound such that no more than one molecular layer of the metal source compound adsorbs on the substrate; removing any vapor phase compounds from the reaction space; introducing a vapor phase boron source compound into the reaction space with the inert carrier gas; contacting the adsorbed metal source compound on the substrate with the vapor phase boron source compound; and removing any gaseous compounds from the reaction space, wherein the inert carrier gas comprises a mild reducing agent.
- 39. The method of claim 38, wherein the inert carrier gas comprises about 0.5% to about 1% of the mild reducing agent by volume.
- 40. The method of claim 39, wherein the mild reducing agent is hydrogen.
- 41. The method of claim 38, wherein the boron source compound does not comprise a carbon atom.
- 42. The method of claim 38, wherein the metal source compound comprises at least one metal selected from the group consisting of Cu, Ag, Au, Pd, Pt, Rh, Ir, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W.
- 43. The method of claim 38, wherein the boron source compound comprises at least one carbon atom.
- 44. The method of claim 43, wherein the metal source compound comprises at least one metal selected from the group consisting of Cu, Ag, Au, Pd, Pt, Rh and Ir.
- 45. A method of producing an electron conductor in an integrated circuit by an atomic layer deposition (ALD) process, comprising adsorbing less than a monolayer of a metal complex on a substrate and exposing the adsorbed metal complex on the substrate to a boron compound, thereby reducing the metal complex to its elemental metal state.
- 46. The method of claim 45, wherein the boron compound does not comprise a carbon atom.
- 47. The method of claim 46, wherein the metal complex comprises at least one metal selected from the group consisting of Cu, Ag, Au, Pd, Pt, Rh, Ir, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W.
- 48. The method of claim 45, wherein the boron compound comprises at least one carbon atom.
- 49. The method of claim 48, wherein the metal complex comprises at least one metal selected from the group consisting of Cu, Ag, Au, Pd, Pt, Rh and Ir.
- 50. A method of producing an interconnect in an integrated circuit, the method comprising:
contacting a substrate in a reaction space with a metal source gas such that less than a monolayer of metal source gas adsorbs on the substrate surface; removing any unreacted portion of the metal source gas and any gaseous reaction byproduct from the reaction space; introducing a vapor-phase boron source gas into the reaction space; and removing any unreacted portion of the boron source gas and any gaseous reaction byproduct from the reaction space.
- 51. The method of claim 50, wherein the boron source gas comprises a boron compound that does not comprise a carbon atom.
- 52. The method of claim 51, wherein the metal source gas comprises a metal selected from the group consisting of Cu, Ag, Au, Pd, Pt, Rh, Ir, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W.
- 53. The method of claim 50, wherein the boron source gas comprises a boron compound that comprises at least one carbon atom.
- 54. The method of claim 53, wherein the metal source gas comprises a metal selected from the group consisting of Cu, Ag, Au, Pd, Pt, Rh and Ir.
Priority Claims (4)
Number |
Date |
Country |
Kind |
FI20000564 |
Mar 2000 |
FI |
|
FI19990233 |
Oct 1999 |
FI |
|
FI19990234 |
Oct 1999 |
FI |
|
FI19990235 |
Oct 1999 |
FI |
|
REFERENCE TO RELATED APPLICATIONS
[0001] The present application claims the priority benefit under 35 U.S.C. §120 as a continuation of U.S. application Ser. No. 09/687,205 and under 35 U.S.C. §119(e) to U.S. Provisional Application Nos. 60/176,948, filed Jan. 18, 2000, and 60/159,799 filed Oct. 15, 1999 and under 35 U.S.C. §119(a) to Finnish application Nos. FI 19992233, filed Oct. 15, 1999, FI19992234 filed Oct. 15, 1999, FI19992235, filed Oct. 15, 1999 and FI20000564, filed Mar. 10, 2000.
Provisional Applications (2)
|
Number |
Date |
Country |
|
60176948 |
Jan 2000 |
US |
|
60159799 |
Oct 1999 |
US |
Continuations (1)
|
Number |
Date |
Country |
Parent |
09687205 |
Oct 2000 |
US |
Child |
10210715 |
Jul 2002 |
US |