SEMICONDUCTOR DEVICE WITH SOLDERABLE LOOP CONTACTS

Abstract

A method of easily manufacturing reliable solder contacts on semiconductor dies are made in the shape of a loop made from metal wires or ribbons that may be coated with other solderable metals. The loops can be in multi loop form, single loop forms or both on the semiconductor die. The loop contacts may be formed on the die using thermosonic or ultrasonic bonding. The die may also be packaged with encapsulating material leaving the die exposed through the encapsulating material as a solder-ready contact for the device.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of a semiconductor device in accordance with a first embodiment of the present invention;

FIG. 1 a is a sectional view taken along line 1a-1a in FIG. 1;

FIG. 1 b is a sectional view taken along line 1b-1b in FIG. 1;

FIG. 2 is a plan view of a semiconductor device in accordance with a second embodiment of the present invention;

FIG. 2 a is sectional view taken along line 2a-2a in FIG. 2;

FIG. 3 is a plan view of a semiconductor device in accordance with a third embodiment of the present invention;

FIG. 3 a is a sectional view taken along line 3a-3a in FIG. 3; and

FIG. 3 b is a sectional view taken along line 3b-3b in FIG. 3.

Claims

1. A semiconductor device comprising: a. a semiconductor die comprising a first surface having one or more terminals and a second surface having at least one terminal;b. a die attach pad with leads;c. at least one loop solderable contact to one of the terminals on the first surface of the semiconductor die; and

2. The device of claim 1, wherein the solderable loop contacts are formed from a metal wire.

3. The device of claim 2, wherein the wire is a metal selected from the group consisting of copper, aluminum, and gold.

4. The device of claim 3, wherein the wire is coated with a solderable material.

5. The device of claim 4, wherein the solderable material is a metal selected from the group consisting of copper, nickel, palladium, and platinum.

6. The device of claim 5, further comprising an application board.

7. The device of claim 3, wherein the solderable loop contacts are formed by thermosonic ball bonding.

8. The device of claim 3, wherein the solderable loop contacts are formed by ultrasonic wedge bonding.

9. The device of claim 4, wherein the solderable loop contacts are formed by thermosonic ball bonding.

10. The device of claim 4, wherein the solderable loop contacts are formed by ultrasonic wedge bonding.

11. The device of claim 1, wherein the solderable loop contacts are formed from a ribbon.

12. The device of claim 11, wherein the ribbon is a metal selected from the group consisting of copper, aluminum, and gold.

13. The device of claim 12, wherein the ribbon is coated with a solderable material.

14. The device of claim 13, wherein the solderable material is a metal selected from the group consisting of copper, nickel, palladium, and platinum.

15. The device of claim 14, wherein the solderable loop contacts are formed by ultrasonic bonding.

16. The device of claim 1, further comprising packaging material.

17. The device of claim 1, wherein the semiconductor die is one of a group consisting of diodes, MOSFETs, IGBTs, thyristors, and bipolar junction transistors.

18. A method of manufacturing a semiconductor device having loop post contacts comprising: a. providing a semiconductor die, a die attach pad with leads, and a solderable loop contact material in the form of a wire or ribbon;b. attaching the die to the die attach pad;c. bonding the loop post contact material in a loop shape to the die.

19. The method of claim 18, wherein the bonding step is thermosonic bonding, wherein the loop contacts are a solderable loop contact material is a metal wire selected from the group of copper, gold, and aluminum.

20. The method of claim 19, wherein the wire is coated with a solderable metal selected from the group consisting of copper, nickel, palladium, and platinum.

21. The method of claim 20, wherein the thermosonic bonding consists of a bond stitch over ball under multi stitch.

22. The method of claim 18, wherein the bonding step is ultrasonic bonding, wherein the loop post contacts are a metal wire or ribbon selected from the group consisting of aluminum, copper, and gold.

23. The method of claim 22, wherein the wire or ribbon is coated with a solderable metal selected from the group consisting of copper, nickel, palladium, and platinum.

24. The device of claim 18, wherein the semiconductor die is one of a group consisting of diodes, MOSFETs, IGBTs, thyristors, and bipolar junction transistors.