Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices

Information

  • Patent Grant
  • 11239128
  • Patent Number
    11,239,128
  • Date Filed
    Friday, August 16, 2019
    5 years ago
  • Date Issued
    Tuesday, February 1, 2022
    2 years ago
Abstract
Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices are described herein. In one embodiment, a set of stacked microelectronic devices includes (a) a first microelectronic die having a first side and a second side opposite the first side, (b) a first substrate attached to the first side of the first microelectronic die and electrically coupled to the first microelectronic die, (c) a second substrate attached to the second side of the first microelectronic die, (d) a plurality of electrical couplers attached to the second substrate, (e) a third substrate coupled to the electrical couplers, and (f) a second microelectronic die attached to the third substrate. The electrical couplers are positioned such that at least some of the electrical couplers are inboard the first microelectronic die.
Description
TECHNICAL FIELD

The present invention is related to microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices.


BACKGROUND

Microelectronic devices generally have a die (i.e., a chip) that includes integrated circuitry having a high density of very small components. In a typical process, a large number of dies are manufactured on a single wafer using many different processes that may be repeated at various stages (e.g., implanting, doping, photolithography, chemical vapor deposition, plasma vapor deposition, plating, planarizing, etching, etc.). The dies typically include an array of very small bond-pads electrically coupled to the integrated circuitry. The bond-pads are the external electrical contacts on the die through which the supply voltage, signals, etc., are transmitted to and from the integrated circuitry. The dies are then separated from one another (i.e., singulated) by dicing the wafer and backgrinding the individual dies. After the dies have been singulated, they are typically “packaged” to couple the bond-pads to a larger array of electrical terminals that can be more easily coupled to the various power supply lines, signal lines, and ground lines.


An individual die can be packaged by electrically coupling the bond-pads on the die to arrays of pins, ball-pads, or other types of electrical terminals, and then encapsulating the die to protect it from environmental factors (e.g., moisture, particulates, static electricity, and physical impact). In one application, the bond-pads are electrically connected to contacts on an interposer substrate that has an array of ball-pads. FIG. 1A schematically illustrates a conventional packaged microelectronic device 10 including an interposer substrate 20 and a microelectronic die 40 attached to the interposer substrate 20. The microelectronic die 40 has been encapsulated with a casing 30 to protect the die 40 from environmental factors.


Electronic products require packaged microelectronic devices to have an extremely high density of components in a very limited space. For example, the space available for memory devices, processors, displays, and other microelectronic components is quite limited in cell phones, PDAs, portable computers, and many other products. As such, there is a strong drive to reduce the surface area or “footprint” of the microelectronic device 10 on a printed circuit board. Reducing the size of the microelectronic device 10 is difficult because high performance microelectronic devices 10 generally have more bond-pads, which result in larger ball-grid arrays and thus larger footprints. One technique used to increase the density of microelectronic devices 10 within a given footprint is to stack one microelectronic device 10 on top of another.



FIG. 1B schematically illustrates the packaged microelectronic device (identified as 10a) of FIG. 1A stacked on top of a second similar microelectronic device 10b. The interposer substrate 20 of the first microelectronic device 10a is coupled to the interposer substrate 20 of the second microelectronic device 10b by large solder balls 50. One drawback of the stacked devices 10a-b is that the large solder balls 50 required to span the distance between the two interposer substrates 20 use valuable space on the interposer substrates 20, which increases the footprint of the microelectronic devices 10a-b.



FIG. 2 schematically illustrates another packaged microelectronic device 60 in accordance with the prior art. The device 60 includes a first microelectronic die 70a attached to a substrate 80 and a second microelectronic die 70b attached to the first die 70a. The first and second dies 70a-b are electrically coupled to the substrate 80 with a plurality of wire-bonds 90. The device further includes a casing 95 encapsulating the dies 70a-b and wire-bonds 90. One drawback of the packaged microelectronic device 60 illustrated in FIG. 2 is that if one of the dies 70a-b fails a post-encapsulation quality control test because it is not properly wire bonded to the substrate 80 or for some other reason, the packaged device 60, including the good die 70, is typically discarded. Accordingly, encapsulating multiple dies together reduces the yield of the resulting packages.





BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1A schematically illustrates a conventional packaged microelectronic device.



FIG. 1B schematically illustrates the packaged microelectronic device of FIG. 1A stacked on top of a second similar microelectronic device.



FIG. 2 schematically illustrates another packaged microelectronic device in accordance with the prior art.



FIGS. 3A-3D illustrate stages in one embodiment of a method for manufacturing a plurality of microelectronic devices.



FIG. 3A is a schematic side cross-sectional view of an assembly including a plurality of microelectronic dies arranged on a first interposer substrate.



FIG. 3B is a schematic side cross-sectional view of the assembly after attaching a plurality of second interposer substrates to corresponding microelectronic dies.



FIG. 3C is a schematic side cross-sectional view of the assembly after forming a casing and attaching a plurality of electrical couplers.



FIG. 3D is a schematic side cross-sectional view of an upper microelectronic device stacked on top of a lower microelectronic device.



FIG. 4 is a schematic side cross-sectional view of a microelectronic device in accordance with another embodiment of the invention.



FIGS. 5A-5C illustrate stages in another embodiment of a method for manufacturing a plurality of microelectronic devices.



FIG. 5A is a schematic side cross-sectional view of an assembly including a plurality of microelectronic dies arranged on a first interposer substrate.



FIG. 5B is a schematic side cross-sectional view of the assembly after attaching a plurality of second interposer substrates to corresponding microelectronic dies.



FIG. 5C is a schematic side cross-sectional view of the assembly after wire-bonding the second interposer substrates to the first interposer substrate and forming a casing.



FIGS. 6A-6D illustrate stages in another embodiment of a method for manufacturing a plurality of microelectronic devices.



FIG. 6A is a schematic side cross-sectional view of an assembly including a plurality of microelectronic dies arranged on a first interposer substrate.



FIG. 6B is a schematic side cross-sectional view of the assembly after attaching a plurality of second interposer substrates to the corresponding dies.



FIG. 6C is a schematic side cross-sectional view of the assembly after forming a casing.



FIG. 6D is a schematic side cross-sectional view of an upper microelectronic device stacked on top of a lower microelectronic device.



FIG. 7 is a schematic side cross-sectional view of a microelectronic device in accordance with another embodiment of the invention.





DETAILED DESCRIPTION

A. Overview


The following disclosure describes several embodiments of microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices. An embodiment of one such set of stacked microelectronic devices includes (a) a first microelectronic die having a first side and a second side opposite the first side, (b) a first substrate attached to the first side of the first microelectronic die and electrically coupled to the first microelectronic die, (c) a second substrate attached to the second side of the first microelectronic die, (d) a plurality of electrical couplers attached to the second substrate, (e) a third substrate coupled to the electrical couplers, and (f) a second microelectronic die attached to the third substrate. The electrical couplers are positioned such that at least some of the electrical couplers are inboard the first microelectronic die.


Another aspect of the invention is directed to microelectronic devices. In one embodiment, a microelectronic device includes (a) a microelectronic die having a first side, a second side opposite the first side, an integrated circuit, and a plurality of terminals electrically coupled to the integrated circuit, (b) a first interposer substrate coupled to the first side of the microelectronic die, and (c) a second interposer substrate coupled to the second side of the microelectronic die. The first interposer substrate has a plurality of first contacts and a plurality of second contacts. The first contacts are electrically coupled to corresponding terminals. The second interposer substrate has a plurality of contacts electrically coupled to corresponding second contacts of the first interposer substrate.


Another aspect of the invention is directed to methods for manufacturing a plurality of microelectronic devices. In one embodiment, a method includes mounting a plurality of microelectronic dies to a first interposer substrate with the dies arranged in an array, attaching a plurality of second interposer substrates to corresponding microelectronic dies with the microelectronic dies positioned between the first interposer substrate and the associated second interposer substrate, and electrically coupling the second interposer substrates to the first interposer substrate.


Another aspect of the invention is directed to methods for stacking microelectronic devices. In one embodiment, a method includes (a) providing a first microelectronic device having a microelectronic die, a first interposer substrate coupled to the microelectronic die, and a second interposer substrate coupled to the microelectronic die such that the die is positioned between the first and second interposer substrates, (b) providing a second microelectronic device having a microelectronic die and an interposer substrate coupled to the microelectronic die, and (c) stacking the second microelectronic device on top of the first microelectronic device with a plurality of electrical couplers positioned between the first and second microelectronic devices and inboard the die of the first microelectronic device. For example, the electrical couplers can be superimposed relative to the microelectronic die of the first microelectronic device and positioned in a zone within the perimeter of the die.


Many specific details of several embodiments of the invention are described below with reference to forming a plurality of microelectronic devices together in a single assembly, but in other embodiments each device can be formed separately. Several embodiments in accordance with the invention are set forth in FIGS. 3A-7 and the following text to provide a thorough understanding of particular embodiments of the invention. A person skilled in the art will understand, however, that the invention may have additional embodiments, or that the invention may be practiced without several of the details of the embodiments shown in FIGS. 3A-7.


B. Embodiments of Methods for Manufacturing Microelectronic Devices



FIGS. 3A-3D illustrate stages in one embodiment of a method for manufacturing a plurality of microelectronic devices. For example, FIG. 3A is a schematic side cross-sectional view of an assembly 100 including a plurality of microelectronic dies 110 (only three are shown) arranged in an array on a first interposer substrate 120. The individual dies 110 include an integrated circuit 112 (shown schematically), an active side 114, a plurality of terminals 116 (e.g., bond pads) arranged in an array on the active side 114, and a backside 118 opposite the active side 114. The backsides 118 of the dies 110 are attached to the first interposer substrate 120 with an adhesive 130, such as an adhesive film, epoxy, tape, paste, or other suitable material. Although the illustrated dies 110 have the same structure, in other embodiments, the dies 110 may have different features to perform different functions.


The first interposer substrate 120 can be a printed circuit board or other member for carrying the dies 110. In the illustrated embodiment, the first interposer substrate 120 includes (a) a first side 122 having a plurality of first contacts 126 and a plurality of second contacts 127, and (b) a second side 124 having a plurality of pads 128. The first contacts 126 can be arranged in arrays for electrical connection to corresponding terminals 116 on the dies 110; the second contacts 127 can be arranged in arrays for electrical connection to corresponding contacts on a second interposer substrate (shown in FIG. 3B); and the pads 128 can be arranged in arrays to receive a plurality of electrical couplers (e.g., solder balls). The first interposer substrate 120 further includes a plurality of conductive traces 129 electrically coupling the first and second contacts 126 and 127 to corresponding pads 128.



FIG. 3B is a schematic side cross-sectional view of the assembly 100 after attaching a plurality of second interposer substrates 140 to corresponding microelectronic dies 110. The individual second interposer substrates 140 include a first side 142 and a second side 144 attached to one of the dies 110 with an adhesive 132. The first side 142 includes (a) a plurality of contacts 146 arranged in an array for electrical connection to a corresponding array of second contacts 127 on the first interposer substrate 120, and (b) a plurality of pads 148 arranged in an array for attachment to a plurality of electrical couplers (e.g., solder balls). In several embodiments, the pads 148 are generally aligned with corresponding pads 128 on the first interposer substrate 120 such that the microelectronic device can be stacked on a similar device and a plurality of electrical couplers can electrically connect corresponding sets of pads 128 and 148, as described below with reference to FIG. 3D. The individual second interposer substrates 140 further include a plurality of conductive traces 149 electrically connecting the pads 148 to corresponding contacts 146. Although the footprint of the illustrated second interposer substrates 140 is smaller than the footprint of the individual dies 110, in other embodiments, such as the embodiment described below with reference to FIG. 4, the footprint of the second interposer substrates 140 can be the same as or larger than the footprint of the dies 110.


After attaching the second interposer substrates 140, the microelectronic dies 110 and the second interposer substrates 140 are wire-bonded to the first interposer substrate 120. Specifically, a plurality of first wire-bonds 134 are formed between the terminals 116 of the dies 110 and corresponding first contacts 126 on the first interposer substrate 120, and a plurality of second wire-bonds 136 are formed between the contacts 146 on the second interposer substrates 140 and corresponding second contacts 127 on the first interposer substrate 120. In additional embodiments, the microelectronic dies 110 can be wire-bonded to the first interposer substrate 120 before the second interposer substrates 140 are attached to the dies 110. In other embodiments, the second interposer substrates 140 can be attached to the dies 110 before the dies 110 are attached to the first interposer substrate 120.



FIG. 3C is a schematic side cross-sectional view of the assembly 100 after forming a casing 150 and attaching a plurality of electrical couplers 160. The casing 150 encapsulates the microelectronic dies 110, the first and second wire-bonds 134 and 136, and a portion of the first and second interposer substrates 120 and 140. Specifically, the illustrated casing 150 encapsulates a perimeter portion of the first side 142 of the second interposer substrate 140 such that the contacts 146 are covered, and defines an opening 152 over a central portion of the first side 142 of the second interposer substrate 140 such that the pads 148 are exposed. The casing 150 can be formed by conventional injection molding, film molding, or other suitable processes. After forming the casing 150, the electrical couplers 160 can be attached to corresponding pads 128 on the first interposer substrate 120, and the assembly 100 can be cut along lines A-A to singulate a plurality of individual microelectronic devices 102.



FIG. 3D is a schematic side cross-sectional view of an upper microelectronic device 102a stacked on top of a lower microelectronic device 102b. The upper and lower devices 102a-b can be generally similar to the microelectronic devices 102 described above with reference to FIGS. 3A-3C. The upper device 102a is coupled to the lower device 102b by inserting the electrical couplers 160 of the upper device 102a into the opening 152 in the casing 150 of the lower device 102b and attaching the electrical couplers 160 to corresponding pads 148 on the second interposer substrate 140 of the lower device 102b. In other embodiments, the upper and lower devices 102a-b can be different devices. For example, the upper device 102a may not include the second interposer substrate 140 and the second wire-bonds 136. Moreover, the microelectronic dies 110 in the upper and lower microelectronic devices 102a-b can be the same or different types of dies. In other embodiments, additional microelectronic devices can be stacked on top of the upper device 102a and/or below the lower device 102b. In additional embodiments, the microelectronic devices 102 can be stacked before the assemblies are cut and the devices 102 are singulated. For example, a plurality of singulated devices 102 can be attached to corresponding devices 102 in the assembly 100 illustrated in FIG. 3C. Alternatively, the devices 102 in two or more assemblies can be attached and singulated together.


One advantage of the microelectronic devices 102 described above with reference to FIGS. 3A-3D is that the devices 102 can be stacked on top of each other. Stacking microelectronic devices increases the capacity and/or performance within a given surface area or footprint of a circuit board. For example, when the upper microelectronic device 102a is stacked on top of the lower microelectronic device 102b and the lower device 102b is attached to a circuit board, the upper microelectronic device 102a is electrically and operably coupled to the circuit board without using significantly more surface area on the circuit board.


Another feature of the microelectronic devices 102 illustrated in FIGS. 3A-3D is that the individual devices can be tested after packaging and before stacking. An advantage of this feature is that defective packaged devices can be detected and excluded from a stack of devices. Therefore, stacks of microelectronic devices can include only known good devices, which increases the yield of the device stacks and reduces the number of devices that are discarded.


Another feature of the stacked microelectronic devices 102 illustrated in FIG. 3D is that the lower microelectronic device 102b includes a second interposer substrate 140 with a plurality of exposed pads 148 inboard the die 110. An advantage of this feature is that the upper microelectronic device 102a can include a fully populated ball grid array, which increases the number of signals that can be passed from the upper device 102a to a circuit board without increasing the footprint on the circuit board.


C. Additional Embodiments of Microelectronic Devices and Methods for Manufacturing Microelectronic Devices



FIG. 4 is a schematic side cross-sectional view of a microelectronic device 202 in accordance with another embodiment of the invention. The microelectronic device 202 is generally similar to the microelectronic devices 102 described above with reference to FIGS. 3A-3D. For example, the microelectronic device 202 includes a microelectronic die 110 attached to a first interposer substrate 120. The illustrated microelectronic device 202, however, further includes a second interposer substrate 240 spaced apart from the die 110 by a stand-off 270. The second interposer substrate 240 includes (a) a first side 242 having a plurality of contacts 246 and a plurality of pads 248, and (b) a second side 244 opposite the first side 242. The contacts 246 are arranged in an array and electrically connected to corresponding second contacts 127 on the first interposer substrate 120 with a plurality of second wire-bonds 136. The pads 248 are arranged in an array and can be aligned with corresponding pads 128 on the first interposer substrate 120. Although the footprint of the illustrated second interposer substrate 240 is approximately the same as the footprint of the die 110, in other embodiments, the footprint of the second interposer substrate 240 can be larger or smaller than the footprint of the die 110.


The stand-off 270 is attached to the second side 244 of the second interposer substrate 240 with a first adhesive 232a and the active side 114 of the die 110 with a second adhesive 232b. The stand-off 270 is sized to space the second interposer substrate 240 apart from the die 110 so that the first wire-bonds 134 can extend between the terminals 116 and corresponding first contacts 126 on the first interposer substrate 120. The stand-off 270 can be a mirror wafer, tape, paste, or other suitable device. A casing 250 can fill the void between the second interposer substrate 240 and the microelectronic die 110.


One feature of the microelectronic device 202 illustrated in FIG. 4 is that the second interposer substrate 240 has a larger footprint than the second interposer substrate 140 discussed above with reference to FIGS. 3A-3D. An advantage of this feature is that the illustrated second interposer substrate 240 can include more pads 248 and accommodate a larger ball grid array, which increases the number of signals that can be passed from an upper microelectronic device to a lower microelectronic device in a device stack.



FIGS. 5A-5C illustrate stages in another embodiment of a method for manufacturing a plurality of microelectronic devices. For example, FIG. 5A is a schematic side cross-sectional view of an assembly 300 including a plurality of microelectronic dies 310 (only three are shown) arranged in an array on a first interposer substrate 120. The individual microelectronic dies 310 include an integrated circuit 112 (shown schematically), an active side 314, a plurality of terminals 316 arranged in an array on the active side 314, and a backside 318 opposite the active side 314. The backsides 318 of the microelectronic dies 310 are attached to the first interposer substrate 120 with an adhesive 130. The first interposer substrate 120 is generally similar to the first interposer substrate 120 described above with reference to FIGS. 3A-3D.



FIG. 5B is a schematic side cross-sectional view of the assembly 300 after attaching a plurality of second interposer substrates 340 to corresponding microelectronic dies 310 with interconnect elements 370. The individual second interposer substrates 340 include a first side 342, a second side 344 opposite the first side 342, a plurality of first contacts 345 on the first side 342, a plurality of second contacts 346 on the first side 342, a plurality of third contacts 347 on the second side 344, and a plurality of pads 348 on the first side 342. The first contacts 345 are arranged in an array for electrical connection to corresponding first contacts 126 on the first interposer substrate 120; the second contacts 346 are arranged in an array for electrical connection to corresponding second contacts 127 on the first interposer substrate 120; the third contacts 347 are arranged in an array and attached to corresponding interconnect elements 370; and the pads 348 are arranged in an array for attachment to a plurality of electrical couplers. The second interposer substrate 340 can further include a plurality of first conductive traces 349a electrically coupling the first contacts 345 to corresponding third contacts 347, and a plurality of second conductive traces 349b electrically coupling the second contacts 346 to corresponding pads 348. The interconnect elements 370 can be solder balls or other conductive members to electrically couple the terminals 316 of the microelectronic die 310 to corresponding third contacts 347 on the second interposer substrate 340. The assembly 300 may further include an underfill material 372 between the microelectronic dies 310 and the corresponding second interposer substrates 340 to bear some of the stress placed on the components and protect the components from moisture, chemicals, and other contaminants.



FIG. 5C is a schematic side cross-sectional view of the assembly 300 after wire-bonding the second interposer substrates 340 to the first interposer substrate 120 and forming a casing 350. A plurality of first wire-bonds 334 extend between the first contacts 345 of the second interposer substrates 340 and corresponding first contacts 126 on the first interposer substrate 120, and a plurality of second wire-bonds 335 extend between the second contacts 346 of the second interposer substrate 340 and corresponding second contacts 127 on the first interposer substrate 120. The first and second wire-bonds 334 and 335 accordingly electrically couple the terminals 316 of the microelectronic die 310 and the pads 348 of the second interposer substrate 340, respectively, to the pads 128 of the first interposer substrate 120.


The casing 350 encapsulates the microelectronic die 310 and a portion of the first and second interposer substrates 120 and 340. Specifically, the casing 350 encapsulates a perimeter portion of the second interposer substrate 340 such that the first and second contacts 345 and 346 are encapsulated and the pads 348 are exposed. After forming the casing 350, the assembly 300 can be cut along lines B-B to singulate a plurality of individual microelectronic devices 302.



FIGS. 6A-6D illustrate stages in another embodiment of a method for manufacturing a plurality of microelectronic devices. For example, FIG. 6A is a schematic side cross-sectional view of an assembly 400 including a plurality of microelectronic dies 410 (only three are shown) arranged in an array on a first interposer substrate 420. The individual microelectronic dies 410 include an integrated circuit 112, an active side 414 attached to the first interposer substrate 420, a plurality of terminals 416 on the active side 414, and a backside 418 opposite the active side 414.


The illustrated first interposer substrate 420 includes a first side 422, a second side 424 opposite the first side 422, a plurality of first contacts 426 on the first side 422, a plurality of second contacts 427 on the second side 424, a plurality of first pads 428a on the second side 424, a plurality of second pads 428b on the second side 424, and a plurality of slots 425 extending between the first and second sides 422 and 424. The first contacts 426 are arranged in arrays for electrical connection to corresponding contacts on a second interposer substrate (described below with reference to FIG. 6B); the second contacts 427 are arranged in arrays for electrical connection to corresponding terminals 416 on the dies 410; and the first and second pads 428a-b are arranged in arrays to receive a plurality of electrical couplers. The first interposer substrate 420 further includes a plurality of first conductive traces 429a electrically coupling the first contacts 426 to corresponding first pads 428a and a plurality of second conductive traces 429b electrically coupling the second contacts 427 to corresponding second pads 428b.



FIG. 6B is a schematic side cross-sectional view of the assembly 400 after attaching a plurality of second interposer substrates 440 to corresponding dies 410 with an adhesive 432. The second interposer substrates 440 include a first side 442, a second side 444 attached to one of the dies 410, a plurality of contacts 446 on the first side 442, a plurality of pads 448 on the first side 442, and a plurality of conductive traces 449 electrically coupling the contacts 446 to corresponding pads 448. The pads 448 are arranged in an array for attachment to electrical couplers and can be generally aligned with corresponding pads 428 on the first interposer substrate 420. Although the illustrated second interposer substrates 440 have a footprint generally similar to the footprint of the die 410, in other embodiments, the second interposer substrates can have a larger or smaller footprint than the die 410.


After attaching the second interposer substrates 440 to the dies 410, the dies 410 are wire-bonded to the first interposer substrate 420, and the first interposer substrate 420 is wire-bonded to the second interposer substrates 440. Specifically, a plurality of first wire-bonds 434 electrically connect the terminals 416 of the dies 410 to corresponding second contacts 427 on the first interposer substrate 420, and a plurality of second wire-bonds 436 electrically connect the contacts 446 on the second interposer substrates 440 to corresponding first contacts 426 on the first interposer substrate 420.



FIG. 6C is a schematic side cross-sectional view of the assembly 400 after forming a casing 450. The casing 450 encapsulates the microelectronic dies 410, the first and second wire-bonds 434 and 436, and a portion of the first and second interposer substrates 420 and 440. Specifically, the casing 450 encapsulates a perimeter portion of the individual second interposer substrates 440 such that the contacts 446 are covered by the casing 450, but the pads 448 are exposed. As such, the casing 450 defines an opening 452 for receiving electrical couplers from another microelectronic device. The casing 450 also covers the second contacts 427 and the slot 425 in the first interposer substrate 420. After forming the casing 450, a plurality of electrical couplers 460 can be placed on corresponding pads 428 of the first interposer substrate 420, and the assembly 400 can be cut along lines C-C to singulate a plurality of individual devices 402.



FIG. 6D is a schematic side cross-sectional view of an upper microelectronic device 402a stacked on top of a lower microelectronic device 402b. The upper device 402a is coupled to the lower device 402b by inserting the electrical couplers 460 of the upper device 402a into the opening 452 in the casing 450 of the lower device 402b and attaching the electrical couplers 460 to corresponding pads 448 on the second interposer substrates 440 of the lower device 402b.


One feature of the microelectronic devices 402 illustrated in FIGS. 6A-6D is that the electrical couplers 460 are positioned inboard the microelectronic dies 410. An advantage of this feature is that the footprint of the devices 402 is reduced. In contrast, in prior art devices, such as the devices 10a-b illustrated in FIGS. 1A and 1B, the solder balls 50 are positioned outboard the dies 40, and consequently, the devices 10a-b have a larger footprint than the microelectronic devices 402 illustrated in FIGS. 6A-6D. Devices with larger footprints use more space on printed circuit boards and other substrates in cell phones, PDAs, computers, and other products.



FIG. 7 is a schematic side cross-sectional view of a microelectronic device 502 in accordance with another embodiment of the invention. The microelectronic device 502 is generally similar to the microelectronic devices 402 described above with reference to FIGS. 6A-6D. For example, the illustrated microelectronic device 502 includes a microelectronic die 410 attached between a first interposer substrate 520 and a second interposer substrate 540. In the illustrated embodiment, however, the first interposer substrate 520 includes a plurality of first contacts on the second side 424, and the second interposer substrate 540 includes a plurality of contacts 546 on the second side 444. Moreover, the illustrated second interposer substrate 540 has a larger footprint than the die 410 and the first interposer substrate 520. The illustrated microelectronic device 502 further includes (a) a plurality of second wire-bonds 536 extending between the contacts 546 on the second interposer substrate 540 and corresponding first contacts 526 on the first interposer substrate 520, and (b) a casing 550 encapsulating the first and second wire-bonds 434 and 536.


One feature of the microelectronic device 502 illustrated in FIG. 7 is that the first and second wire-bonds 434 and 536 are formed on a single side of the device 502. An advantage of this feature is that the microelectronic device 502 can be wire-bonded in a single-pass process that is faster and easier than processes which require flipping a device over to form wire-bonds on both sides. Another feature of the microelectronic device 502 illustrated in FIG. 7 is that the casing 550 is formed on only a single side of the second interposer substrate 540. An advantage of this feature is that the casing 550 can be formed with a one-sided mold cavity, which is less complex and expensive than a two-sided mold cavity.


From the foregoing, it will be appreciated that specific embodiments of the invention have been described herein for purposes of illustration, but that various modifications may be made without deviating from the spirit and scope of the invention. For example, many of the elements of one embodiment can be combined with other embodiments in addition to or in lieu of the elements of the other embodiments. Accordingly, the invention is not limited except as by the appended claims.

Claims
  • 1. A microelectronic device, comprising: a first interposer substrate having an upper surface and a lower surface opposite the upper surface, wherein the first interposer substrate includes a first array of pads carried by the lower surface, and wherein each of the pads on the lower surface is positioned within a first longitudinal area;a microelectronic die carried on the upper surface of the first interposer substrate and electrically coupled to the first interposer substrate;a standoff disposed over the microelectronic die;a second interposer substrate disposed over the standoff and electrically coupled to the first interposer substrate, wherein the second interposer substrate includes a second array of pads carried by an upper surface of the second interposer substrate, and wherein each individual pad in the second array of pads is aligned with a corresponding individual pad in the first array of pads; anda casing at least partially encapsulating the microelectronic die, the standoff, and the second interposer substrate, wherein the casing includes an opening with a second longitudinal area greater than the first longitudinal area.
  • 2. The microelectronic device of claim 1, wherein the microelectronic die is electrically coupled to the first interposer substrate by a first plurality of wirebonds.
  • 3. The microelectronic device of claim 2, wherein the second interposer substrate is electrically coupled to the first interposer substrate by a second plurality of wirebonds.
  • 4. The microelectronic device of claim 3, wherein the casing further at least partially encapsulates the first and second pluralities of wirebonds.
  • 5. The microelectronic device of claim 1, wherein the first interposer substrate includes a perimeter array of bond-pads on an upper side thereof, and wherein the microelectronic die is positioned within an outline of the perimeter array.
  • 6. The microelectronic device of claim 1, wherein the microelectronic die includes a perimeter array of bond-pads on an upper side thereof, and wherein the standoff is positioned within an outline of the perimeter array.
  • 7. The microelectronic device of claim 1, wherein a backside of the microelectronic die is attached to the first interposer substrate by an adhesive.
  • 8. The microelectronic device of claim 1, wherein the standoff is attached to an upper side of the microelectronic die by a first adhesive and is attached to a lower side of the second interposer substrate by a second adhesive.
  • 9. The microelectronic device of claim 1, wherein each of the pads on the lower surface of the first interposer is positioned inboard of the microelectronic die.
  • 10. A microelectronic device, comprising: a first interposer substrate having an upper surface and a lower surface opposite the upper surface, wherein the first interposer substrate includes a first array of at least four pads carried by the lower surface;a microelectronic die carried on the upper surface of the first interposer substrate and electrically coupled to the first interposer substrate;a standoff disposed over the microelectronic die;a second interposer substrate disposed over the standoff and electrically coupled to the first interposer substrate, wherein the second interposer substrate includes a second array of at least four pads carried by an upper surface of the second interposer substrate; anda casing at least partially encapsulating the microelectronic die, the standoff, and the second interposer substrate,wherein each individual pad in the first array of pads has a centerline that is vertically aligned with a centerline of a corresponding individual pad in the second array of pads.
  • 11. A stacked microelectronic device, comprising: a first microelectronic device, including: a first lower substrate,a first microelectronic die carried on the first lower substrate and electrically coupled to the first lower substrate,a first standoff disposed over the first microelectronic die,a first upper substrate disposed over the first standoff and electrically coupled to the first lower substrate, anda casing at least partially encapsulating the first microelectronic die, the first standoff, and the first upper substrate; anda second microelectronic device, including: a second lower substrate,a second microelectronic die carried on the second lower substrate and electrically coupled to the second lower substrate,a second standoff disposed over the second microelectronic die,a second upper substrate disposed over the second standoff and electrically coupled to the second lower substrate, anda second casing at least partially encapsulating the second microelectronic die, the second standoff, and the second upper substrate,wherein the second lower substrate is disposed over the first upper substrate and electrically coupled to the first upper substrate by a plurality of electrical couplers.
  • 12. The stacked microelectronic device of claim 11, wherein the first microelectronic die includes a first perimeter array of bond-pads on an upper side thereof, and wherein the first standoff is positioned within an outline of the first perimeter array.
  • 13. The stacked microelectronic device of claim 11, wherein a first plurality of wirebonds attach the first perimeter array of bond-pads to a second perimeter array of bond-pads on an upper side of the first lower substrate.
  • 14. The stacked microelectronic device of claim 13, wherein the first microelectronic die is positioned within an outline of the second perimeter array.
  • 15. The stacked microelectronic device of claim 11, wherein the first casing exposes at least a portion of an upper surface of the first upper substrate, and wherein the portion includes a first plurality of pads arranged in a first array.
  • 16. The stacked microelectronic device of claim 15, wherein the first plurality of electrical couplers attach the first plurality of pads to a second plurality of pads arranged in a second array on a lower surface of the second lower substrate.
  • 17. The stacked microelectronic device of claim 11 wherein the second microelectronic die includes a second perimeter array of bond-pads on an upper side thereof, and wherein the second upper substrate is positioned within an outline of the second perimeter array.
  • 18. The stacked microelectronic device of claim 11, wherein: the first microelectronic die is electrically coupled to the first lower substrate by a first plurality of wirebonds,the first upper substrate is electrically coupled to the first lower substrate by a second plurality of wirebonds, andthe first casing further at least partially encapsulates the first and second pluralities of wirebonds.
  • 19. The stacked microelectronic device of claim 11, wherein a backside of the first microelectronic die is attached to the first lower substrate by an adhesive.
  • 20. The stacked microelectronic device of claim 11, wherein the first standoff is attached to an upper side of the first microelectronic die by a first adhesive and is attached to a lower side of the first upper substrate by a second adhesive.
Priority Claims (1)
Number Date Country Kind
200505312-9 Aug 2005 SG national
CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No. 15/583,826, filed May 1, 2017, now U.S. Pat. No. 10,431,513; which is a continuation of U.S. application Ser. No. 14/470,831, filed Aug. 27, 2014, now U.S. Pat. No. 9,640,458; which is a continuation of U.S. application Ser. No. 13/933,607, filed Jul. 2, 2013, now U.S. Pat. No. 8,823,159; which is a continuation of U.S. application Ser. No. 12/469,455, filed May 20, 2009, now U.S. Pat. No. 8,507,318; which is a divisional of U.S. application Ser. No. 11/217,627, filed Aug. 31, 2005, now U.S. Pat. No. 7,557,443; which claims foreign priority benefits of Republic of Singapore Application No. 200505312-9, filed Aug. 19, 2005, now Republic of Singapore Patent No. 130055; each of which is incorporated herein by reference in its entirety.

US Referenced Citations (222)
Number Name Date Kind
729110 Young May 1903 A
5128831 Fox, III et al. Jul 1992 A
5138438 Masayuki et al. Aug 1992 A
5252857 Kane et al. Oct 1993 A
5258330 Khandros Nov 1993 A
5291061 Ball Mar 1994 A
5495398 Takiar et al. Feb 1996 A
5518957 Kim May 1996 A
5594275 Kwon Jan 1997 A
5744827 Jeong Apr 1998 A
5801439 Fujisawa Sep 1998 A
5864177 Sundstrom Jan 1999 A
5883426 Tokuno et al. Mar 1999 A
5904497 Akram May 1999 A
5921061 Weder Jul 1999 A
5923954 Cho Jul 1999 A
5946553 Wood et al. Aug 1999 A
5986209 Tandy Nov 1999 A
5990566 Farnworth et al. Nov 1999 A
6005778 Spielberger et al. Dec 1999 A
6006778 Kim Dec 1999 A
6020624 Wood et al. Feb 2000 A
6020629 Farnworth et al. Feb 2000 A
6028365 Akram et al. Feb 2000 A
6051878 Akram et al. Apr 2000 A
6055778 Ide et al. May 2000 A
6060373 Saitoh May 2000 A
6072233 Corisis et al. Jun 2000 A
6072236 Akram et al. Jun 2000 A
6175149 Akram Jan 2001 B1
6212767 Tandy Apr 2001 B1
6225689 Moden et al. May 2001 B1
6235554 Akram et al. May 2001 B1
6239496 Asada May 2001 B1
6252299 Masuda et al. Jun 2001 B1
6255899 Bertin et al. Jul 2001 B1
6258623 Moden et al. Jul 2001 B1
6281577 Oppermann et al. Aug 2001 B1
6285558 Frantz et al. Sep 2001 B1
6291061 LeMay et al. Sep 2001 B1
6294831 Shishido et al. Sep 2001 B1
6294839 Mess et al. Sep 2001 B1
6297547 Akram Oct 2001 B1
6303981 Moden Oct 2001 B1
6332766 Thummel Dec 2001 B1
6335491 Alagaratnam et al. Jan 2002 B1
6336491 Sakamoto Jan 2002 B1
6351028 Akram Feb 2002 B1
6370012 Adae-Amoakoh et al. Apr 2002 B1
6376904 Khalili et al. Apr 2002 B1
6400169 Hembree Jun 2002 B1
6414384 Lo et al. Jul 2002 B1
6418033 Rinne Jul 2002 B1
6424031 Glenn Jul 2002 B1
6429528 King et al. Aug 2002 B1
6441483 Akram Aug 2002 B1
6445064 Ishii et al. Sep 2002 B1
6452279 Shimoda Sep 2002 B2
6458617 Liao et al. Oct 2002 B1
6461895 Mosley et al. Oct 2002 B1
6472736 Yeh et al. Oct 2002 B1
6472758 Glenn et al. Oct 2002 B1
6503776 Pai et al. Jan 2003 B2
6506681 Grigg et al. Jan 2003 B2
6514794 Khalili et al. Feb 2003 B2
6518655 Morinaga et al. Feb 2003 B2
6528870 Fukatsu et al. Mar 2003 B2
6538332 Murayama et al. Mar 2003 B2
6545366 Michii et al. Apr 2003 B2
6548376 Jiang Apr 2003 B2
6552910 Moon et al. Apr 2003 B1
6558977 Nakaoka et al. May 2003 B2
6560117 Moon et al. May 2003 B2
6563206 Kamikuri et al. May 2003 B2
6566739 Moon May 2003 B2
6580611 Vandentop et al. Jun 2003 B1
6582991 Maeda Jun 2003 B1
6603072 Foster et al. Aug 2003 B1
6607937 Corisis Aug 2003 B1
6621155 Khalili et al. Sep 2003 B1
6653731 Kato et al. Nov 2003 B2
6664143 Zhang Dec 2003 B2
6686656 Koh et al. Feb 2004 B1
6724074 Song et al. Apr 2004 B2
6750551 Frutschy et al. Jun 2004 B1
6762488 Maeda et al. Jul 2004 B2
6774475 Blackshear et al. Aug 2004 B2
6777794 Nakajima Aug 2004 B2
6828665 Pu et al. Dec 2004 B2
6836002 Chikawa et al. Dec 2004 B2
6861288 Shim et al. Mar 2005 B2
6864566 Choi Mar 2005 B2
6885092 Sakuma et al. Apr 2005 B1
6885106 Damberg et al. Apr 2005 B1
6896760 Connell et al. May 2005 B1
6936499 Shibata et al. Aug 2005 B2
6937458 Seshan Aug 2005 B2
6953991 Hatada Oct 2005 B2
6979905 Nishida et al. Dec 2005 B2
7022418 Connell et al. Apr 2006 B2
7026709 Tsai et al. Apr 2006 B2
7030501 Yoshiba et al. Apr 2006 B2
7037751 Connell et al. May 2006 B2
7037756 Jiang et al. May 2006 B1
7067926 Yamazaki et al. Jun 2006 B2
7071421 Heng et al. Jul 2006 B2
7094630 Tomita et al. Aug 2006 B2
7148080 Kim et al. Dec 2006 B2
7205656 Kim et al. Apr 2007 B2
7226808 Aoyagi Jun 2007 B2
7230329 Sawamoto et al. Jun 2007 B2
7268418 Wang Sep 2007 B2
7276786 Cho et al. Oct 2007 B2
7279795 Ooi et al. Oct 2007 B2
7298032 Kim et al. Nov 2007 B2
7298033 Yoo Nov 2007 B2
7355290 Kurihara et al. Apr 2008 B2
7358600 d'Estries et al. Apr 2008 B1
7390700 Gerber et al. Jun 2008 B2
7390711 Byun et al. Jun 2008 B2
7391105 Yeom Jun 2008 B2
7393105 Bauer et al. Jul 2008 B2
7429786 Karnezos et al. Sep 2008 B2
7429787 Karnezos et al. Sep 2008 B2
7498667 Ha et al. Mar 2009 B2
7557443 Ye Jul 2009 B2
7573139 Gerber et al. Aug 2009 B2
7576435 Chao Aug 2009 B2
7619315 Kwon Nov 2009 B2
7629677 Youn Dec 2009 B2
7642636 Park et al. Jan 2010 B2
7687315 Carson Mar 2010 B2
7851119 Toshine et al. Dec 2010 B2
7859094 Chow Dec 2010 B2
7863723 Oh et al. Jan 2011 B2
7888185 Corisis Feb 2011 B2
7919871 Song et al. Apr 2011 B2
8101459 Derderian Jan 2012 B2
8106520 Keeth et al. Jan 2012 B2
8129824 St et al. Mar 2012 B1
8133761 Gerber et al. Mar 2012 B2
8143727 Oh et al. Mar 2012 B2
8227925 Song Jul 2012 B2
8253244 Kang Aug 2012 B2
8309397 Shim Nov 2012 B2
8395251 Shim et al. Mar 2013 B2
8471376 Liou et al. Jun 2013 B1
8507318 Ye Aug 2013 B2
8519523 Ye Aug 2013 B2
8519537 Shih et al. Aug 2013 B2
8617924 Kim Dec 2013 B2
8624372 Hetzel et al. Jan 2014 B2
8685792 Chow et al. Apr 2014 B2
8686570 Goel et al. Apr 2014 B2
8686579 Barney et al. Apr 2014 B2
8803327 Oh Aug 2014 B2
8823159 Ye Sep 2014 B2
8970023 Hsieh et al. Mar 2015 B2
8999754 Chow Apr 2015 B2
9147668 Lin et al. Sep 2015 B2
9245772 Yang et al. Jan 2016 B2
9640458 Ye May 2017 B2
10315513 Cunningham et al. Jun 2019 B2
10431513 Ye Oct 2019 B2
20010000053 Suh et al. Mar 2001 A1
20010008306 Kamei et al. Jul 2001 A1
20020014689 Lo et al. Feb 2002 A1
20020027295 Kikuma et al. Mar 2002 A1
20020079567 Lo et al. Jun 2002 A1
20020079667 Pohill et al. Jun 2002 A1
20020090753 Pai et al. Jul 2002 A1
20020149097 Lee et al. Oct 2002 A1
20020171136 Hiraoka et al. Nov 2002 A1
20020190391 Ichikawa Dec 2002 A1
20030015721 Slater, Jr. et al. Jan 2003 A1
20030124766 Kim et al. Jul 2003 A1
20040038449 Corisis Feb 2004 A1
20040150084 Nishida et al. Aug 2004 A1
20040159954 Hetzel et al. Aug 2004 A1
20040178488 Bolken et al. Sep 2004 A1
20040178499 Mistry et al. Sep 2004 A1
20040178508 Nishimura et al. Sep 2004 A1
20040201087 Lee Oct 2004 A1
20040251536 Hatada et al. Dec 2004 A1
20050001305 Kyung Jan 2005 A1
20050023657 Tsai Feb 2005 A1
20050054140 Kim et al. Mar 2005 A1
20050087852 Chen et al. Apr 2005 A1
20050104182 Kim May 2005 A1
20050133932 Pohl Jun 2005 A1
20050263868 Aoyagi Dec 2005 A1
20060043603 Ranade et al. Mar 2006 A1
20060044773 Akram et al. Mar 2006 A1
20060108676 Punzalan et al. May 2006 A1
20060159947 Connell et al. Jul 2006 A1
20060172510 Connell et al. Aug 2006 A1
20060201704 Heng et al. Sep 2006 A1
20060244117 Karnezos Nov 2006 A1
20060270104 Trovarelli et al. Nov 2006 A1
20070045796 Ye et al. Mar 2007 A1
20070045803 Ye et al. Mar 2007 A1
20070045862 Corisis et al. Mar 2007 A1
20070181989 Corisis et al. Aug 2007 A1
20080012110 Chong et al. Jan 2008 A1
20080179729 Shim et al. Jul 2008 A1
20080217767 Tago Sep 2008 A1
20080308950 Yoo et al. Dec 2008 A1
20090127689 Ye et al. May 2009 A1
20090160065 Haba et al. Jun 2009 A1
20090239337 Ye et al. Sep 2009 A1
20100065949 Thies et al. Mar 2010 A1
20110049694 Chandrasekaran et al. Mar 2011 A1
20110049695 Shin et al. Mar 2011 A1
20110140268 Cheah et al. Jun 2011 A1
20120018887 Ye et al. Jan 2012 A1
20130000968 Zhao et al. Jan 2013 A1
20130187292 Semmelmeyer et al. Jul 2013 A1
20140217604 Chou et al. Aug 2014 A1
20150064850 Yeh et al. Mar 2015 A1
20150137364 Said et al. May 2015 A1
20160064320 Li et al. Mar 2016 A1
20170301598 Ye Oct 2017 A1
Foreign Referenced Citations (15)
Number Date Country
0782191 Jul 1997 EP
1560267 Aug 2005 EP
02005553 Jan 1990 JP
2003-86733 Mar 2003 JP
200386733 Mar 2003 JP
2004172157 Jun 2004 JP
2004273938 Sep 2004 JP
2004281920 Oct 2004 JP
2005150719 Jun 2005 JP
2006024842 Jan 2006 JP
236744 Dec 1994 TW
I236744 Jul 2005 TW
2004027823 Apr 2004 WO
2005059967 Jun 2005 WO
2007024483 Mar 2007 WO
Non-Patent Literature Citations (11)
Entry
Hunter, Lloyd P. (editor), Handbook of Semiconductor Electronics, New York, McGraw-Hill, 1970, Section 9, pp. 9-1 to 9-25.
Office Action dated Aug. 13, 2014 in European Application No. 06801011.5, 6 pages.
Office Action dated Feb. 23, 2010 in Republic of Korea Application No. 10-2008-7005359.
Office Action dated Oct. 14, 2009 for Taiwan Application No. 095130498.
Office Action dated Sep. 14, 2010 in Japan Application No. 2008-526996, 9 pages.
Search Report and Written Opinion for International Application No. PCT/US2006/030969, 11 pages, dated Apr. 12, 2007.
Search Report and Written Opinion for Singapore Application No. 200505312-9, 9 pages, dated Nov. 22, 2006.
Written Opinion dated Aug. 14, 2008 for Singapore Application No. 200505312-9.
Written Opinion dated Jul. 7, 2009 for Singapore Application No. 200505312-9.
Written Opinion dated Oct. 17, 2007 for Singapore Application No. 200505312-9.
EP Patent Application No. 06801011.5—European Office Action (Summons to Attend Oral Proceedings Pursuant to Rule 115(1) EPC), dated Oct. 20, 2017, 6 pages.
Related Publications (1)
Number Date Country
20190371693 A1 Dec 2019 US
Divisions (1)
Number Date Country
Parent 11217627 Aug 2005 US
Child 12469455 US
Continuations (4)
Number Date Country
Parent 15583826 May 2017 US
Child 16543430 US
Parent 14470831 Aug 2014 US
Child 15583826 US
Parent 13933607 Jul 2013 US
Child 14470831 US
Parent 12469455 May 2009 US
Child 13933607 US