Packaged microelectronic device for a package-on-package device

Abstract

Methods and apparatuses relate generally to a packaged microelectronic device for a package-on-package device (“PoP”) with enhanced tolerance for warping. In one such packaged microelectronic device, interconnect structures are in an outer region of the packaged microelectronic device. A microelectronic device is coupled in an inner region of the packaged microelectronic device inside the outer region. A dielectric layer surrounds at least portions of shafts of the interconnect structures and along sides of the microelectronic device. The interconnect structures have first ends thereof protruding above an upper surface of the dielectric layer a distance to increase a warpage limit for a combination of at least the packaged microelectronic device and one other packaged microelectronic device directly coupled to protrusions of the interconnect structures.

Description

FIELD

The following description relates to microelectronic devices. More particularly, the following description relates to a packaged microelectronic device for a package-on-package device to provide enhanced tolerance for warping.

BACKGROUND

Package-on-package microelectronic devices conventionally include two or more packaged microelectronic devices stacked on one another. More recently, one or more of these packaged microelectronic devices is so thin as to make warpage a more significant yield and/or reliability limiting factor.

BRIEF DESCRIPTION OF THE DRAWING(S)

Accompanying drawing(s) show exemplary embodiment(s) in accordance with one or more aspects of exemplary apparatus(es) or method(s). However, the accompanying drawings should not be taken to limit the scope of the claims, but are for explanation and understanding only.

FIGS. 1-1 through 1-10 are a progression of block diagrams illustratively depicting exemplary process flows and structures for a “redistribution layer first” formation of a packaged microelectronic device.

FIGS. 2-1 through 2-3 are block diagrams illustratively depicting a package-on-package device including the packaged microelectronic device of FIG. 1-10 at different states of warpage.

FIGS. 3-1 through 3-3 are a progression of block diagrams illustratively depicting exemplary process flows and structures for a “redistribution layer first” formation for another packaged microelectronic device for a package-on-package device.

FIGS. 4-1 through 4-3 are a progression of block diagrams illustratively depicting exemplary process flows and structures for a “redistribution layer first” formation for yet another packaged microelectronic device for a package-on-package device.

FIG. 5 is a flow diagram illustratively depicting an exemplary “redistribution layer first” process flow for a packaged microelectronic device in accordance with any and all of FIGS. 1-1 through 4-3.

FIGS. 6-1 through 6-4B are progressions of block diagrams illustratively depicting exemplary process flows and structures for a “redistribution layer last” formation for still yet another packaged microelectronic device for a package-on-package device.

FIGS. 7-1 and 7-2 are a progression of block diagrams illustratively depicting exemplary process flows and structures for a “redistribution layer-less” formation for further yet another packaged microelectronic device for a package-on-package device.

FIG. 8 is a flow diagram illustratively depicting an exemplary “redistribution layer last” and “redistribution layer-less” process flow for a packaged microelectronic device in accordance with any and all of FIGS. 6-1 through 7-2.

DETAILED DESCRIPTION

In the following description, numerous specific details are set forth to provide a more thorough description of the specific examples described herein. It should be apparent, however, to one skilled in the art, that one or more other examples or variations of these examples may be practiced without all the specific details given below. In other instances, well known features have not been described in detail so as not to obscure the description of the examples herein. For ease of illustration, the same number labels are used in different diagrams to refer to the same items; however, in alternative examples the items may be different.

Exemplary apparatus(es) and/or method(s) are described herein. It should be understood that the word “exemplary” is used herein to mean “serving as an example, instance, or illustration.” Any example or feature described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other examples or features.

The following description includes description of package-on-package microelectronic devices (“PoPs”). Along those lines, one microelectronic package of a PoP may be configured to accommodate warpage of another microelectronic package. Optionally, microelectronic packages of a PoP may be configured to accommodate warpage between directly coupled microelectronic packages of a PoP.

Some microelectronic packages are presently in a range of approximately 150 to 400 microns thick (0.150 to 0.400 millimeters (mm) thick), for a microelectronic package in total height, excluding solder ball or other external interconnects. Overall height of a PoP is presently conventionally approximately 800 to 1200 microns (0.800 to 1.200 mm). As one or more microelectronic packages in a PoP may be in a range of approximately 150 to 400 microns thick, likelihood of warping of such one or microelectronic packages may be higher than if such one or more microelectronic packages were thicker than 400 microns.

As described below in additional detail, one or more interconnect structures are provided with protruding ends (“protrusions”) above a molding or encapsulation surface of one or more of such microelectronic packages of a PoP. Heights of these protrusions allow for more surface area in a vertical or z-axis direction. However, height of these protrusions is limited by an overall height allowance of such PoPs.

Microelectronic packages of a PoP directly coupled to one another warp away one from the other. Furthermore, directly coupled microelectronic packages of a PoP may both warp in opposing directions away from one another. However, surface area of such protrusions may allow solder masses or other electrically conductive eutectic bonding masses (“bonding masses”) to more readily stay adhered in the presence of such warpage. Increased surface area provided by such protrusions to which such bonding masses are attached at least in part may allow for an increase in allowable warpage. Whether either or both microelectronic packages directly coupled to one another warp, height of protrusions therebetween in excess of convention allows for an increased tolerance for such warpage.

Along those lines, a method relates generally to forming a packaged microelectronic device. In such a method, at least one redistribution layer is formed having an inner region and an outer region outside the inner region. The forming of the at least one redistribution layer includes forming first interconnect pads in both the inner region and the outer region on a lower surface and second interconnect pads in the outer region on an upper surface of the at least one redistribution layer. Interconnect structures are formed on and extend away from corresponding upper surfaces of the second interconnect pads in the outer region. A microelectronic device is coupled to an upper surface of the at least one redistribution layer in the inner region. A dielectric layer is formed to surround at least portions of shafts of the interconnect structures. The interconnect structures have upper ends thereof protruding above an upper surface of the dielectric layer a distance to increase a warpage limit for a combination of at least the packaged microelectronic device and one other packaged microelectronic device directly coupled to protrusions of the interconnect structures.

An apparatus relates generally to a packaged microelectronic device. In such a packaged microelectronic device, at least one redistribution layer has an inner region and an outer region outside the inner region. The at least one redistribution layer includes first interconnect pads in both the inner region and the outer region on a lower surface and second interconnect pads in the outer region on an upper surface of the at least one redistribution layer. Interconnect structures are on and extend away from corresponding upper surfaces of the second interconnect pads in the outer region. A microelectronic device is coupled to an upper surface of the at least one redistribution layer in the inner region. A dielectric layer surrounds at least portions of shafts of the interconnect structures. The interconnect structures have upper ends thereof protruding above an upper surface of the dielectric layer a distance to increase a warpage limit for a combination of at least the packaged microelectronic device and one other packaged microelectronic device directly coupled to protrusions of the interconnect structures.

Another method relates generally to forming a packaged microelectronic device. In such other method, interconnect structures are formed in an outer region of the packaged microelectronic device. A microelectronic device is coupled in an inner region of the packaged microelectronic device inside the outer region. A dielectric layer is formed to surround at least portions of shafts of the interconnect structures and along sides of the microelectronic device. The interconnect structures have first ends thereof protruding above an upper surface of the dielectric layer a distance to increase a warpage limit for a combination of at least the packaged microelectronic device and one other packaged microelectronic device directly coupled to protrusions of the interconnect structures.

Another apparatus relates generally to another packaged microelectronic device. In such other packaged microelectronic device, interconnect structures are in an outer region of the packaged microelectronic device. A microelectronic device is coupled in an inner region of the packaged microelectronic device inside the outer region. A dielectric layer surrounds at least portions of shafts of the interconnect structures and along sides of the microelectronic device. The interconnect structures have first ends thereof protruding above an upper surface of the dielectric layer a distance to increase a warpage limit for a combination of at least the packaged microelectronic device and one other packaged microelectronic device directly coupled to protrusions of the interconnect structures.

Other features will be recognized from consideration of the remainder of the Detailed Description and Claims, which follow.

RDL First Examples with “Straight” Interconnect Structures

FIGS. 1-1 through 1-10 are a progression of block diagrams illustratively depicting exemplary process flows and structures for a packaged microelectronic device (“packaged device”) 100. With simultaneous reference to FIGS. 1-1 through 1-10, formation of a packaged device 100 is further described.

At 201, a carrier substrate 101 may be obtained having an upper surface 121 and a lower surface 104 opposite upper surface 121. Carrier substrate 101 may be any support platform, including without limitation a carrier wafer, used to provide temporary support for formation of a plurality of substrate assemblies thereon, including a plurality of packaged devices 100 even though formation of a single packaged device 100 is illustratively depicted for purposes of clarity and not limitation.

An adhesive layer 102, such as an adhesive tape or other adhesive layer, may optionally be formed, put upon or otherwise adhered to an upper surface 121 of carrier substrate 101 in direct contact therewith.

A metal layer 103, such as a metal foil including without limitation a copper foil, may be formed, put on or otherwise applied to an upper surface 122 of adhesive layer 102 in direct contact therewith. If optional adhesive layer 102 is not used, then metal layer 103 may be placed on upper surface 121 of carrier substrate 101 in direct contact therewith.

At 202, metal layer 103 may be patterned to form conductive pads 103. Formation of conductive pads 103 may be by masking, lithographic patterning and metal etching, direct write e-beam or laser patterning, or other suitable means for removing a part of metal layer 103 to form electrically conductive interconnect pads (“conductive pads”) 103.

Conductive pads 103 may generally be located in either of two regions, an inner region 104 or an outer region 129. Outer region 129 may generally be thought of as a peripheral layout region, and inner region 104 may generally be thought of as an area array layout region.

Formation of conductive pads 103 may be considered an initial metal layer for formation of a redistribution layer (“RDL”) 107. Conductive pads 103 may in whole or in part form an area array layout. Optionally, a dielectric layer may be used, and such dielectric layer may be patterned at 202 to form recesses for conductive pads 103 followed by deposition of a metal layer 103 including into such recesses followed by etching, polishing or grinding back for providing conductive pads 103.

At 203, one or more dielectric layers, such as one or more spin coat layers, may be used to form at least one dielectric layer 118 for a redistribution layer 107. As is known, a redistribution layer 107 may include one or more dielectric layers and one or more metal layers.

Dielectric layer 118 may be patterned to form recesses associated with conductive pads, illustratively depicted as recesses 156. A metal layer 119 may be conformally deposited onto an upper surface of such patterned dielectric layer 118.

At 204, such metal layer 119 may be polished or ground down to dielectric layer 118 to in effect provide electrically conductive vias (“vias”) 119V to conductive pads 103. Optionally, pad level electrically conductive traces (“traces”) 119T may be provided with metal layer 119. Optionally, recesses for surface traces may be formed in an upper surface of dielectric layer 118 for conformal deposition of metal layer 119 therein to form traces 119T, which may or may not be interconnected to vias 119V for electrical conductivity.

At 205, a capping dielectric layer 105 may be deposited to fill recesses formed, such as for forming vias 119V for example, for redistribution layer 107. Such capping dielectric layer 105 may be polished or ground back to provide an upper surface 123.

At 206, interconnect pads 108 of a redistribution layer 107 may be formed, such as in any of the above-described ways of forming conductive pads 103, on upper surface 123. Interconnect pads 108 in this example are formed only in outer region 129. In contrast, conductive pads 103 in this example are formed in both inner region 104 and outer region 129.

Optionally, a lower redistribution layer 107-1 may be formed followed by optional formation of an upper redistribution layer 107-2 interconnected to redistribution layer 107-1. However, for purposes of clarity by way of example and not limitation, it shall be assumed that a single redistribution layer 107 is used in this example.

Before or after formation of interconnect pads 108, at 207A contacts 111, which may include electrically conductive solder or other eutectic masses, may be formed or put in an inner region 104 on an upper surface 123 of dielectric layer 105. Contacts 111 may be for interconnection of an integrated circuit microelectronic device (“microelectronic device”) 109.

Microelectronic device 109 may be positioned in inner region 104 in a “face-down” orientation for interconnection through contacts 111 with vias 119V and/or traces 119T. In an example, microelectronic device 109 may be an active device, such as for example an active area array microelectronic device. In another example, microelectronic device 109 may be a passive device, such as for example a passive area array microelectronic device. In yet another example, microelectronic device 109 may include an interposer having one or more integrated circuit dies coupled thereto. In still yet another example, microelectronic device 109 may include one or more stacks of integrated circuit dies.

Microelectronic device 109 may be a bare or packaged device. In an example, microelectronic device 109 may optionally include a backside redistribution layer 199. Backside redistribution layer 199 may or may not be interconnected internally within microelectronic device 109 to one or more active devices, such as an integrated circuit die component of microelectronic device 109. Such integrated backside redistribution layer 199 may for example be a passive device for routing of signals and/or voltages.

Optionally at 207B, before or after formation of interconnect pads 108, at 207B an adhesive layer 128, such as for a die attach pad for example, may be formed or positioned in an inner region 104 on an upper surface 123 of dielectric layer 105 for interconnection of microelectronic device 109. Microelectronic device 109 may be positioned in a “face-up” or a “face-down” orientation for attachment to an upper surface 123 of dielectric layer 105 through use of adhesive layer 128. For purposes of clarity by way of example and not limitation, a face-down orientation of microelectronic device 109 is further described.

At 208, interconnect structures 115 may be formed on and extending away from corresponding upper surfaces 124 of interconnect pads 108 in outer region 129. Generally, in this example interconnect structures 115 are “straight”, namely there is no intentional bend in interconnect structures 115 in this example. In an example, interconnect structures 115 can be formed as wire bond wires or other extruded electrical conductor bonded to upper surfaces 124.

In another example, interconnect structures 115 may be formed as plated wires. Plated wires may be formed including depositing a resist, masking and patterning such resist, removing portions of such resist to form holes with corresponding upper surfaces 124 as bottom surfaces respectively thereof. Such holes may be plated with one or more layers of material, including at least one electrically conductive material. Generally, solid or hollow metal posts may be formed in part by plating. In another example, metal coated dielectric posts may be formed.

Interconnect structures 115 implemented as wire bond wires may have a thickness 114 in a range of approximately 15 to 45 microns. Interconnect structures implemented as plated posts may have a thickness 114 in a range of approximately 1 to 45 microns.

In another example, additional surface area for plated posts may be formed by optionally forming contact pads 198. Contact pads 198 may be formed same or similar to plated posts, as bases of protrusions 220. However, for purposes of clarity by way of example and not limitation, it shall be assumed that optional contact pads 198 are not formed in this example.

Generally, interconnect structures 115 may be formed by dipping, transferring, depositing, placing, or a combination thereof, to form pins, posts, pillars, leads, wires, or other similar structures having a vertical orientation which may or may not be perpendicular to upper surfaces of corresponding interconnect pads 108.

Interconnect structures 115 may be solid or hollow, fully or partially electrically conductive, and/or supported partially by a semiconductor or dielectric material. For purposes of clarity by way of example and not limitation, an example with plating-formed posts for interconnect structures 115 is further described.

At 209, optionally with formation of interconnect structures 115 at 208, interconnect structures 116 may simultaneously be formed though extending away from an upper surface 129 of a microelectronic device 109. In an example, interconnect structures 116 may be interconnected to through-silicon-vias (not shown) of microelectronic device 109. Optionally, interconnect structures 116 may be formed in separate operations than interconnect structures 115.

For an optional backside redistribution layer 199 included with microelectronic device 109, a fan-in or fan-out pitch may be used by interconnect structures 116 for interconnection with such backside redistribution layer 199. Optionally, microelectronic device 109 may include a front side redistribution layer or interposer 197 for a fan-in or fan-out pitch for coupling to contacts 111. Optionally, both optional redistribution layers 197 and 199 may be included in microelectronic device 109.

Assuming no TSVs in microelectronic device 109, optional backside redistribution layer 199 may not be internally interconnected within microelectronic device 109 to an IC die thereof for signaling. However, a front side redistribution layer 197 may be internally interconnected within microelectronic device 199 to an IC die thereof for signaling.

Optionally, interconnect structures 115 may be straight but slanted or tilted, as generally indicated with dashed line 196, to increase pitch. For purposes of clarity by way of example and not limitation, it shall be assumed that optional redistribution layers 197 and 199 are not included in microelectronic device 109 and that interconnect structures 115 are not slanted.

For purposes of clarity by way of example and not limitation, an example of plating-formed posts for interconnect structures 116 is further described. Generally, solid or hollow metal posts may be formed in part by plating. In another example, metal coated dielectric posts may be formed. In yet another example, interconnect structures 116 may be wire bond wires or one or more of the other examples for interconnect structures 115. Optionally, a combination of two or more different forms of interconnect structures 115 and/or 116 may be implemented.

Interconnect structures 115 may be used to increase a warpage limit with respect to outer region 129. Inner interconnect structures 116 may be used to increase a warpage limit with respect to inner region 104.

At 210, a dielectric layer 117 may be formed surrounding at least portions of shafts 115S of interconnect structures 115 and along sides 167 of and over and on an upper surface 168 of microelectronic device 109. Optionally, dielectric layer 117 may be formed surrounding at least portions of shafts 116S of interconnect structures 116.

Interconnect structures 115 and/or 116 may respectively have corresponding upper ends 115E and/or 116E, as well as corresponding portions of shafts 115S and/or 116S, protruding above an upper surface 126 of dielectric layer 117. Interconnect structures 115 and/or 116 may protrude a distance of protrusion height 137 to provide protrusions 220 for at least some if not all of interconnect structures 115 and/or 116. Protrusions 220 may have portions of shafts 115S and 116S for providing wicking lengths for adherence of solder or other electrically conductive bonding masses 131 at 211.

Protrusions 220 may increase a warpage limit for a combination of a packaged device 100 with another packaged device directly coupled to upper ends 115E and 116E respectively of corresponding interconnect structures 115 and/or 116 with bonding masses 131. While some numerical examples of heights for protrusions 220 are provided herein, generally protrusion height 137 is at least 30% of a distance 112 of separation between an upper surface 126 of packaged device 100 and a lower surface 120 of a package device 130.

Dielectric layer 117 may be injection molded with a mold assist film to leave protrusions 220 out of molding material to form an upper surface 126 of dielectric layer 117 below upper ends 115E and/or 116E by a distance or protrusion height 137. Optionally, dielectric layer 117 may be formed by an encapsulant, molding or composite material, which may be molded, potted, spun on, laminated, screen printed, applied, or otherwise suitably formed. If upper ends 115E and/or 116E are covered by a material used to form dielectric layer 117, subsequent polishing, grinding, and/or etching back may be used to reveal protrusions 220.

Protrusions 220 may have portions of shafts 115S at least temporarily exposed for wettable surfaces by an electrically conductive bonding material.

With additional reference to FIGS. 2-1 through 2-3, formation of a PoP 139 is described.

At 211, packaged device 100 may be singulated from carrier substrate 101. Carrier substrate 101 and adhesive layer 102 may be removed from packaged device 100.

Further, at 211 another package device 130 may be directly coupled to upper ends 115E and/or 116E and/or at least portions of shafts 115S and/or 116S of protrusions 220 with solder balls or other electrically conductive bonding masses 131 to provide a PoP 139. Bonding masses 131 may be deposited or otherwise formed over upper ends 115E and/or 116E as well as along at least portions of shafts 115S and/or 116S of protrusions 220.

Protrusion height 137 for wicking of bonding masses 131 may be in a range above a conventional height of micro pillars on pads for a PoP, which conventional height is generally in a range of approximately 30 to 40 microns. Protrusion height 137 may be in a range of approximately 75 to 120 microns or more. In other words, protrusion height 137 may be more than double the height of conventional micro pillars.

Generally height of bonding masses 131 is at least approximately 200 to 250 microns after collapse for approximately a 300 to 400 micron pitch of such bonding masses. Thus no additional height need be added by protrusions 220, as the entire length of protrusions 220 may be covered by bonding masses 131. In other words, protrusion height 137 is less than overall height of bonding masses 131, and so protrusions 220 may be used without adding to height or thickness of PoP 139.

Solder balls or other electrically conductive bonding masses 155 may be attached to corresponding undersides of conductive pads 103, which are exposed after removal of carrier substrate 101, as well as possibly optional adhesive layer 102. In another example, electrically conductive bonding masses 155 may be for a surface mount interconnection.

In this example, packaged device 130 is of a different configuration than packaged device 100. However, in another example packaged device 130 may have a same general configuration as packaged device 100.

In this example configuration of packaged device 130, packaged device 130 includes an interposer 133 having conductive routings 134 interconnected to an integrated circuit die 132 with under bump metalization 135. A molding/encapsulating layer 136 of packaged device 130 may be used to cover integrated circuit die 132.

Packaged device 130 may have a packaged device height or thickness 158 from an upper surface of molding/encapsulating layer 136 to upper ends 115E and 116E, namely including a portion, if any, of the thickness of bonding masses 131 trapped between upper ends 115E or 116E and a lower surface of interposer 133. packaged device height or thickness 158 for in such example may be in a range of approximately 800 to 1200 microns. Generally, packaged device 130 at least as thick as 800 microns is not as susceptible to warping as packaged device 100.

Packaged device 100 may have an overall height or thickness 157 from upper ends 115E and 116E to bottom surface 122 of redistribution layer 107, namely excluding bonding masses 155. A packaged device 100 may have a “body” thickness in a range of approximately 150 to 400 microns, excluding heights of conductive bonding masses 155 and protrusions 220. Assuming bonding masses 155 have a height in a range of approximately 300 to 400 microns, total height or thickness 159 of PoP 139 may thus be in a range of approximately 1350 (i.e., 800+150+100+300) microns to 2120 (i.e., 1200+400+120+400) microns.

For purposes of clarity by way of example and not limitation, assuming no warpage in packaged devices 100 and 130 in FIG. 2-1, PoP 139 of FIG. 2-1 may be in a state of no warpage and thus may be a reference for determining a warpage measurement 138. Warpage measurement 138 (illustratively depicted in FIGS. 2-2 and 2-3) may be for a greatest amount of warpage.

With reference to FIG. 2-2 for purposes of clarity by way of non-limiting example, packaged device 100 may be turned up at either or both ends with reference to packaged device 130, assuming packaged device 130 has no warpage for purposes of a reference. With reference to FIG. 2-3 for purposes of clarity by way of non-limiting example, packaged device 100 may be bowed upward in a middle section thereof with reference to packaged device 130, assuming packaged device 130 has no warpage for purposes of a reference.

In either of these examples, a warpage measurement 138 may be obtained. This warpage measurement 138 may be a bounded parameter to a maximum warpage of approximately 60 (i.e., 100-40) to 90 (i.e., 120-30) microns in excess of a conventional limit therefor due to use of protrusions 220. In other words, bonded masses 131 may be within tolerance for reliably maintaining a direct coupling of packaged device 100 and 130 one to another even with a warpage in excess of a conventional limit therefor.

For purposes of clarity by way of non-limiting example, if height of protrusions is 100 microns and warpage tolerance without such additional protrusion heights is 100 microns with 40 micron high micro pillars, then overall warpage tolerance may be increased to approximately 160 microns by use of protrusions as described herein. This is just one example, and other values may be used in accordance with the description herein.

By increasing tolerance for warpage between two packaged devices with no increase in overall height, yield and/or product reliability of PoPs may be increased. Additionally, if protrusions 220 do not include optional contact pads 198, then surface area for wicked adherence of bonding masses 131 may be limited to upper ends 115E and at least portions of shafts 115S of protrusions 220 for interconnect structures 115 for example. Thus, contact area reliability and warpage tolerance height are both dependent on protrusions 220. In contrast to conventional micro pillars, which use a pad to provide sufficient contact surface area for reliable adherence, protrusions 220 do not necessarily require use of a pad for contact area.

If, however, optional contact pads 198 are implemented, then surface areas for contact with bonding masses 131 may be substantially provided by such contact pads 198 in comparison with surface areas of protrusions 220. In this example, warpage tolerance height may be based primarily on protrusions 220. In other words, if optional contact pads 198 are used, then shorter protrusions 220 may be used. However, less warpage tolerance may be provided by use of shorter protrusions 220 in comparison to taller protrusions 220.

RDL First Examples with “Bent” Interconnect Structures

FIGS. 3-1 through 3-3 are a progression of block diagrams illustratively depicting exemplary process flows and structures for other examples of packaged device 100. FIG. 3-1 continues after FIG. 1-7B, and so the previous description is not repeated for purposes of clarity and not limitation.

Again, a face-down orientation for microelectronic device 109 is assumed for purposes of clarity and not limitation. Optional interconnect structures 116 whether intentionally straight and/or intentionally bent to have lateral sections may be implemented in accordance with the description herein. For these examples, it is assumed that optional interconnect structures 116 are not implemented.

With simultaneous reference to FIGS. 1-1 through 3-3, such exemplary process flows and structures for other examples of packaged device 100 are further described.

At 221, one or more bent interconnect structures 115 are formed with lateral sections 115L. Interconnect structures 115 in previously described examples were intentionally straight. For FIGS. 3-1 through 3-3, one or more of interconnect structures 115 may be intentionally formed with one or more bends 160 at one or more ends of lateral sections 115L of such interconnect structures 115.

Bases 115B of bent interconnect structures 115 may be ball, stitch or otherwise bonded to upper surfaces 124 of corresponding interconnect pads 108. A wire bond forming tool (not shown) may be used to extend bases 115B vertically away from upper surfaces 124 and then bend wire bond wires, right or left, to initiate a bend 160 at an end of a lateral section 115L within a shaft 115S of such a bent interconnect structure 115. Lateral sections 115L may be bent at an acute angle 161 with reference to a horizontal plane of an upper or lower surface of a redistribution layer 107.

Optionally, a portion of a lateral section 115L may overlap an upper surface 125 of microelectronic device 109, as illustratively indicated with a dashed line. Optionally, a portion of a lateral section 115L of a bent interconnect structure 115 may overlap a portion of an adjacent neighboring interconnect pad 108, as illustratively indicated with a dashed line. Optionally, a portion of a lateral section 115L of a bent interconnect structure 115 may overlap a portion of an adjacent neighboring bent interconnect structure 115, as illustratively indicated with a dashed line.

Pitch P1 between bases 115B of adjacent neighboring interconnect structures 115, including at least one bent interconnect structure 115 thereof, may be substantially narrower than pitch P2 between upper ends 115E of such adjacent neighboring interconnect structures 115. Along those lines, there may be more area for wider pitches by extending one or more upper ends 115E of interconnect structures from outer region 129 into inner region 104. Wider pitch P2 may be used to fan-out or fan-in signals and/or voltages from and/or to microelectronic device 109.

At 222, a dielectric layer 117 may be formed surrounding at least portions of shafts 115S of interconnect structures 115, as previously described. Interconnect structures 115 may have corresponding upper ends 115E, as well as corresponding portions of shafts 115S and/or 116S, protrude above an upper surface 126 of dielectric layer 117 a distance or height 137. Interconnect structures 115 may protrude a distance of protrusion height 137 to provide protrusions 220 for at least some if not all of straight and/or bent interconnect structures 115.

Protrusions 220 may increase a warpage limit for a combination of a packaged device 100 with one other packaged device directly coupled to upper ends 115E of corresponding bent and/or straight interconnect structures 115 with bonding masses 131. Protrusions 220 may be straight, whether perpendicular or not with respect to upper surface 126.

Upper ends 115E of protrusions 220 of bent interconnect structures 115 may be are laterally displaced a distance 224 with respect to corresponding bases 115B of such bent interconnect structures. Bent, slanted, and/or straight interconnect structures 115 may all have a same protrusion height 137.

Prior to attachment of upper ends 115E at least some, if not all, of bent interconnect structures 115 have cantilevered portions of shafts 115S. Cantilevered portions of shafts 115S may correspond to upper ends 115E and may be strait for interconnection with a packaged device 130.

At least some of bent interconnect structures 115 are wire bond wires bonded to upper surfaces 124 of interconnect pads 108 with cantilevered shafts being bonding tool formed. Optionally, a portion of such at least some of bent interconnect structures 115 may have cantilevered portions of shafts 115S extending over upper surface 125 of a microelectronic device 109. Again, microelectronic device 109 may be an area array microelectronic device.

Optionally, at least some of interconnect structures 115 may have different pitches as between ends 115E and bases 115B thereof. Optionally, at least some of interconnect structures 115 may be shaped leads.

At 223, packaged device 100 may be singulated from carrier substrate 101. Carrier substrate 101 and adhesive layer 102 may be removed from packaged device 100 as previously described for operations at 211.

At 223, another package device 130 may be directly coupled to upper ends 115E, and/or 116E, and at least portions of shafts 115S, and/or 116S, of protrusions 220 as previously described with reference to operations at 211. Bonding masses 131 may be deposited or otherwise formed as previously described.

Protrusion height 137 may be as previously described. Bonding masses 131 may be as previously described, so as to not add any additional height or thickness to PoP 139.

Solder balls or other electrically conductive bonding masses 155 may be attached as previously described. Packaged device 130 may be as previously described. Packaged device 100 may be as previously described with respect to an overall height or thickness 157 from upper ends 115E and 116E to bottom surface 122 of redistribution layer 107, namely excluding bonding masses 155.

FIGS. 4-1 through 4-3 are a progression of block diagrams illustratively depicting exemplary process flows and structures for still other examples of packaged device 100. FIG. 4-1 continues after FIG. 1-8 or optionally FIG. 1-9, and so the previous description is not repeated for purposes of clarity and not limitation.

At 231, a stiffening or other reinforcing layer (“reinforcing layer”) 127 may be dispensed, deposited, spun on, or otherwise used to coat an in-process packaged device 100. Reinforcing layer 127 may be a stiffener material. Reinforcing layer 127 may be deposited as a wicking layer to exposed surfaces of an in-process packaged device 100. Reinforcing layer 127 may be used prior to formation of dielectric layer 117 to be beneath dielectric layer 117. Stiffener material may adhere to exterior surfaces, including in at least in part exterior surfaces of interconnect structures 115. Stiffener material may adhere to at least sides of microelectronic device 109.

Reinforcing layer 127 may be a dielectric composition stiffener material which wets exterior surfaces, including exterior surfaces of shafts 115S of interconnect structures 115. Such a stiffener material may be a viscous material. Along those lines, reinforcing layer 127 may wick-up sides of shafts 115S of interconnect structures 115. For example, a stiffener material may be an epoxy or other suitable polymeric material.

Optionally, at 231 an etch back 234 may be used to remove upper residual stiffener material on sides of protrusions 220, including upper ends 115E.

At 232, a dielectric layer 117 may be formed surrounding at least remaining portions of shafts 115S of interconnect structures 115. Optionally, dielectric layer 117 may be formed surrounding at least remaining portions of shafts 116S of interconnect structures 116. The remainder of the above-description of formation of dielectric layer 117 and other description for any and all operations at 232 is the same as at 210, and thus is not repeated.

At 233, packaged device 100 may be singulated from carrier substrate 101. Carrier substrate 101 and adhesive layer 102 may be removed from packaged device 100 as previously described for operations at 211.

At 233 another package device 130 may be directly coupled to upper ends 115E, and/or 116E, and at least portions of shafts 115S, and/or 116S, of protrusions 220, as previously described for operations at 211.

Protrusion height 137 may be as previously described. Bonding masses 131 may be as previously described, so as to not add any additional height or thickness to PoP 139.

Solder balls or other electrically conductive bonding masses 155 may be attached as previously described. Packaged device 130 may be as previously described. Packaged device 100 may be as previously described with respect to an overall height or thickness 157 from upper ends 115E and 116E to bottom surface 122 of redistribution layer 107, namely excluding bonding masses 155.

With reference to FIG. 5, a flow diagram illustrative depicts an exemplary “redistribution layer first” process flow (“process flow”) 140 for a packaged device 100. Process flow 140 follows from one or more of the above-described operations, and thus is a general recapitulation thereof for purposes of clarity and not limitation.

At 141, at least one redistribution layer 107 having an inner region and an outer region outside the inner region is formed. Such forming of at least one redistribution layer 107 may include forming first interconnect pads 103 in both the inner region and the outer region at a lower surface and second interconnect pads 108 in the outer region at an upper surface of at least one redistribution layer 107. Formation at 141 may include at least some of operations 151 through 154.

At 151, a carrier substrate having an upper surface and a lower surface opposite the upper surface is obtained. At 152, an adhesive layer 102 is optionally adhered to the upper surface of carrier substrate 101. At 153, a metal layer 103 is applied to either an upper surface of adhesive layer 102 or the upper surface of carrier substrate 101. At 154, first interconnect pads 103 are patterned out of metal layer 103. Patterning at 154 may include forming an area array layout for a subset of first interconnect pads 103 in the inner region.

After 141, at 142 interconnect structures 115 are formed directly or indirectly on and extend away from corresponding upper surfaces of the second interconnect pads in the outer region. At 143, a microelectronic device 109 is coupled to an upper surface of at least one redistribution layer 107 in the inner region.

Optionally at 144, a stiffening layer 127 may be formed with a stiffener material. Optionally, at 145, residual portions of the stiffener material at upper ends of interconnect structures 115 are etched back.

At 146, a dielectric layer 117 is formed surrounding at least portions of shafts of interconnect structures 115. At 147, optionally residual portions of dielectric layer 117 at the upper ends of interconnect structures 115 are etched back.

At this juncture, interconnect structures 115 have upper ends protruding above an upper surface of dielectric layer 117 a distance to increase a warpage limit. Increased warpage limit is for a combination of at least packaged device 100 and one other packaged device 130 directly coupled to protrusions 220 of interconnect structures 115.

At 148, a packaged device 100 may be singulated from carrier substrate 101. At 149, carrier substrate 101 and adhesive layer 102 can be removed from packaged device 100. For forming a PoP 139, optionally at 150 another packaged device 130 is coupled to the upper ends of interconnect structures 115 with electrically conductive bonding masses 131 to provide a PoP 139.

“RDL Last” or “RDL-Less” Examples with “Straight” and/or “Bent” Interconnect Structures

With reference to FIG. 6-1, at 241 a carrier substrate 101 having an upper surface 171 and a lower surface opposite thereof has formed on an upper surface 171 thereof a metal layer 179. As many features of the following description have been previously described, though in different sequences, multiple operations are combined at 241 for purposes of clarity and not limitation.

Optionally, metal layer 179 may be patterned to form interconnect pads 108 in outer region 129 and a heat spreader 176 in inner region 104. For purposes of clarity and not limitation, it shall be assumed that interconnect pads 108 and heat spreader 176 are not formed of metal layer 179.

A same metal layer 179, or optionally another metal layer 177, may be formed. For purposes of clarity by way of example and not limitation, it shall be assumed that another metal layer 177 is formed on an upper surface 172 of metal layer 179. In this example, metal layer 179 is a sacrificial metal layer.

Metal layer 177 may be patterned on metal layer 179 to form interconnect pads 108 in outer region 129. Metal layer 177 may be at least essentially removed from inner region 104.

An adhesive or die pad layer 162 may be deposited or otherwise adhered to an upper surface 172 of metal layer 179 in inner region 104. An upper surface 173 of adhesive layer 162 may be above or taller than an upper surface 174 of interconnect pads 108. In an example, adhesive layer 162 is an adhesive tape.

At 241 “straight” interconnect structures 115 and/or “bent” interconnect structures 115, as indicated in a dashed line, may be formed in an outer region 129 for a packaged device 100. Interconnect structures 115 may for example be plated posts or wire bond wires with same or different pitches, as previously described. For purposes of clarity and not limitation, it shall be assumed that “straight” interconnect structures 115 are formed at 241.

Still at 241, a microelectronic device 109 may be coupled in a face-up orientation to upper surface 173 of adhesive layer 162 in an inner region 104 of packaged device 100 inside outer region 129. In another example, microelectronic device 109 may be coupled in a face-down orientation.

In this example, microelectronic device 109 is pre-bumped with bumps 175. In another example, microelectronic device 109 may not be pre-bumped with bumps 175. However, in this example, a front-side surface of microelectronic device 109 has bumps 175 residing thereon.

Continuing at 241, a dielectric layer 117 may be formed surrounding at least portions of shafts 115S of interconnect structures 115 and along sides of microelectronic device 109. Optionally, prior to formation of dielectric layer 117, a reinforcing layer 127 may be formed as previously described including wicking along sides of microelectronic device 109.

At 241, a polishing or grinding operation 163 may be used to remove a portion of dielectric layer 117 down to upper surfaces 164 of bumps 175 and upper ends 115E of interconnect structures 115, namely upper surface 165 of dielectric layer 117. Optionally, an etch back operation may be used for such removal of a portion of dielectric layer 117. Optionally, a mold assist film may be used to form dielectric layer 117 below bumps 175 and upper ends 115E.

With reference to FIG. 6-2, at 242, at least one redistribution layer 107 may be formed over upper ends 115E of interconnect structures 115 and over bumps of microelectronic device 109. At a lower surface of such at least one redistribution layer 107, traces 166 and/or vias 119V may be formed for interconnection of one or more bumps 175 to one or more interconnect structures 115. Formation of at least one redistribution layer 107 may include formation of upper interconnect pads 103 in both inner region 104 and outer region 129 along an upper surface of such at least one redistribution layer 107.

With reference to FIG. 6-3A, at 243A carrier 101 and metal layer 179 may be removed, and packaged device 100 may be inverted. Lower ends or bases 115B of interconnect structures 115 opposite upper ends 115E may protrude above an upper surface of dielectric layer 117, after inversion from the view illustratively depicted in FIG. 6-2. A distance or height 137 of such protrusions 220 may be to increase a warpage limit for a combination of at least packaged device 100 and one other packaged device 130 directly coupled to such protrusions 220 of interconnect structures 115. Thus, bases 115B after inversion may have interconnect pads 108 located thereon and thereabove with ends 108E of interconnect pads 108 opposite and over bases 115B.

At 243A adhesive layer 162 may be removed. Further, at 243A an upper portion of dielectric layer 117 may be etched back to lower upper surface 126 of dielectric layer 117. In this example, upper surface 126 is lowered down to an upper surface of microelectronic device 109 (as illustratively depicted) to provide a protrusion height 137. In this example, protrusion height 137 of protrusions 220 may be from upper surface 126 to bases 115B.

With reference to FIG. 6-3B, 243B is an optional example where interconnect pads 108 are not formed, such as for no metal layer 177 and metal layer 179 as a sacrificial layer. The remainder of operations at 243B are the same as at 243A, except in this example, upper surface 126 is lowered down to just above an upper surface (i.e., a lower surface prior to inversion) of microelectronic device 109 to provide a protrusion height 137. Again, protrusion height 137 of protrusions 220 may be from upper surface 126 to bases 115B.

With reference to operations at 244A and 244B respectively illustratively depicted in FIGS. 6-4A and 6-4B, a packaged device 130 may be coupled to protrusions 220 of interconnect structures 115 with electrically conductive bonding masses 131 to provide respective PoPs 139. Same description is not repeated with respect to formation of PoPs 139 for purposes of clarity and not limitation.

With reference to FIG. 7-1, packaged device 100 at 241 of FIG. 6-1 may be formed without interconnect pads 108 and without a redistribution layer 107 at 301. Moreover, in this example microelectronic device 109 is not pre-bumped, but may be pre-bumped in another implementation. Along those lines, lower ends 115E, previously upper ends, may be generally at a same level with a front-side surface of microelectronic device 109. Ends 115E and microelectronic device 109 may optionally be bumped for subsequent interconnection, such as a surface mount interconnection.

At 301 adhesive layer 162 may be removed. The remainder of operations at 301 are the same as at 243B, except in this example, upper surface 126 is lowered down to an upper surface (i.e., a lower surface prior to inversion) of microelectronic device 109 to provide a protrusion height 137. Again, protrusion height 137 of protrusions 220 may be from upper surface 126 to bases 115B.

With reference to operation at 302 illustratively depicted in FIG. 7-2, a packaged device 130 may be coupled to protrusions 220 of interconnect structures 115 with electrically conductive bonding masses 131 to provide a PoP 139. Same description is not repeated with respect to formation of PoP 139 for purposes of clarity and not limitation.

With reference to FIG. 8, a flow diagram illustratively depicts an exemplary “redistribution layer last” and “redistribution layer-less” process flow (“process flow”) 340 for a packaged device 100. Process flow 340 follows from one or more of the above-described operations, and thus is a general recapitulation thereof for purposes of clarity and not limitation.

At 341 interconnect structures 115 are formed directly or indirectly on and extend away from corresponding upper surfaces of interconnect pads 108 in outer region 129. Formation at 341 may include at least some of operations 351 through 354.

At 351, a carrier substrate 101 having an upper surface and a lower surface opposite the upper surface is obtained. At 352, a metal layer 179 is optionally applied to an upper surface of carrier substrate 101.

At 353, an adhesive layer 102 is adhered to either the upper surface of carrier substrate 101 or metal layer 179. At 354, interconnect pads 108 are optionally patterned out of metal layer 177 and/or 179. Patterning at 354 may include forming an area array layout for a subset of first interconnect pads 103 in the inner region.

At 342, a microelectronic device 109 is coupled to an upper surface of adhesive layer 162 in inner region 104.

Optionally at 343, a stiffening layer 127 may be formed with a stiffener material. Optionally, at 344, residual portions of the stiffener material at upper or first ends of interconnect structures 115 are etched back.

At 345, a dielectric layer 117 is formed surrounding at least portions of shafts of interconnect structures 115. At 346, optionally residual portions of dielectric layer 117 at the upper ends of interconnect structures 115 are etched back.

At 347, at least one redistribution layer 107 in inner region 104 and outer region 129 outside the inner region is optionally formed on an upper surface of dielectric layer 117. At least one redistribution layer 107 may be formed to include interconnection with upper ends of interconnect structures 115. Such forming of at least one redistribution layer 107 may include forming interconnect pads 103, traces 166, and/or vias 119V in inner region 104 and/or outer region 129 of at least one redistribution layer 107.

At 348, carrier substrate 101, optional metal layer 179 and adhesive layer 162 can be removed from packaged device 100.

At 349, such in-process substrate assembly for packaged device 100 may be etched back to remove a lower portion of dielectric layer 117 to expose protrusions 220 of interconnect structures 115. Operations at 349 may include inversion of such packaged device 100 for removal of what was a lower portion of dielectric layer 117.

At this juncture, interconnect structures 115 have what were lower ends, now upper ends, protruding above what is now an upper surface of dielectric layer 117 a distance to increase a warpage limit. Increased warpage limit is for a combination of at least packaged device 100 and one other packaged device 130 directly coupled to protrusions 220 of interconnect structures 115.

At 350, a packaged device 100 may be singulated from a wafer or panel of such packaged devices 100. For forming a PoP 139, optionally another packaged device 130 is coupled to what were lower ends 115E, now upper ends 115E, of interconnect structures 115 with electrically conductive bonding masses 131 to provide a PoP 139, such as previously described and not repeated for purposes of clarity.

While the foregoing describes exemplary embodiment(s) in accordance with one or more aspects of the disclosure, other and further embodiment(s) in accordance with the one or more aspects of the disclosure may be devised without departing from the scope thereof, which is determined by the claim(s) that follow and equivalents thereof. Each claim of this document constitutes a separate embodiment, and embodiments that combine different claims and/or different embodiments are within the scope of the disclosure and will be apparent to those of ordinary skill in the art after reviewing this disclosure. Claim(s) listing steps do not imply any order of the steps. Trademarks are the property of their respective owners.

Claims

1. A method for forming a packaged microelectronic device, comprising: forming interconnect structures in and coupled to an outer region of a redistribution layer of the packaged microelectronic device;providing a microelectronic device in and coupled to an inner region of a redistribution layer of the packaged microelectronic device inside the outer region;forming a dielectric layer surrounding at least portions of shafts of the interconnect structures and along sides of the microelectronic device; andthe interconnect structures having first ends thereof protruding above an upper surface of the dielectric layer a distance and having second ends thereof coupled to the redistribution layer, the first ends and the second ends corresponding thereto facing away from one another.

2. The method according to claim 1, further comprising: forming the redistribution layer over the second ends of the interconnect structures and over the microelectronic device, the second ends of the interconnect structures being opposite the first ends of the interconnect structures, the redistribution layer including interconnect pads in both the inner region and the outer region along a surface of the redistribution layer.

3. The method according to claim 1, wherein the interconnect structures include plating-formed posts.

4. The method according to claim 1, wherein the interconnect structures include wire bond wires.

5. The method according to claim 1, further comprising forming interconnect pads located on the first ends of the interconnect structures.

6. The method according to claim 1, wherein the packaged microelectronic device is a first packaged microelectronic device, the method further comprising coupling a second packaged microelectronic device to protrusions associated with the first ends of the interconnect structures with electrically conductive bonding masses to provide a package-on-package device.

7. The method according to claim 1, wherein the first ends of at least some of the interconnect structures protruding above the upper surface of the dielectric layer are laterally displaced with respect to corresponding ones of the second ends of the interconnect structures.

8. A packaged microelectronic device, comprising: interconnect structures in and coupled to an outer region of a redistribution layer of the packaged microelectronic device;a microelectronic device provided in and coupled to an inner region of a redistribution layer of the packaged microelectronic device inside the outer region; anda dielectric layer surrounding at least portions of shafts of the interconnect structures and along sides of the microelectronic device;the interconnect structures having first ends thereof protruding above an upper surface of the dielectric layer a distance and having second ends thereof coupled to the redistribution layer, the first ends and the second ends corresponding thereto facing away from one another.

9. The packaged microelectronic device according to claim 8, further comprising: the redistribution layer coupled to the second ends of the interconnect structures and over the microelectronic device; andthe redistribution layer comprising interconnect pads in both the inner region and the outer region along a surface of the redistribution layer.

10. The packaged microelectronic device according to claim 8, wherein the interconnect structures include plating-formed posts.

11. The packaged microelectronic device according to claim 8, wherein the interconnect structures include wire bond wires.

12. The packaged microelectronic device according to claim 8, further comprising interconnect pads located on the first ends of the interconnect structures.

13. The packaged microelectronic device according to claim 8, wherein the packaged microelectronic device is a first packaged microelectronic device, and the first packaged microelectronic device further comprising a second packaged microelectronic device directly coupled to protrusions associated with the first ends of the interconnect structures with electrically conductive bonding masses to provide a package-on-package device.

14. The packaged microelectronic device according to claim 8, wherein the first ends of at least some of the interconnect structures protruding above the upper surface of the dielectric layer are laterally displaced with respect to corresponding ones of the second ends of the interconnect structures.

15. The packaged microelectronic device according to claim 8, further comprising a reinforcing layer with a stiffener material beneath the dielectric layer.

16. The packaged microelectronic device according to claim 8, wherein the first ends protrude at least 100 microns beyond the dielectric layer.

17. The packaged microelectronic device according to claim 13, wherein the first ends protrude to a length sufficient to accommodate warpage of the first packaged microelectronic device or the second packaged microelectronic device.