Patent Grant
10032709
Traditional integrated circuit (IC) chips are generally thick and rigid. In addition, they are mounted on printed circuit boards (PCBs) that are as thick, if not thicker, than the chips and similarly rigid. Such processing using thick printed circuit boards are generally incompatible with chips that are thinned or have stretchable interconnects.
Many schemes have been proposed for embedding chips on PCBs in flexible polymers. Most of these schemes are based on an assumption that the chips are considerably thicker than the layers of the flexible polymer that makes up the PCBs. Such schemes are not compatible for thinner chips.
In view of the foregoing, various examples described herein are directed generally to methods for embedding thin device islands, including IC chips, and/or stretchable interconnects in a flexible polymer. Various examples described herein are also directed generally to apparatus and systems based on thin device islands, including IC chips, and/or stretchable interconnects embedded in flexible polymer.
According to the principles disclosed herein, an apparatus can include a substrate comprising a standoff well region. The substrate can include a layer of a first conductive material disposed on a layer of a flexible polymer, and a patterned portion of the first conductive material comprises a standoff bordering a portion of exposed flexible polymer, thereby forming the standoff well region. The apparatus can also include a thin chip disposed within the standoff well region on a portion of the exposed flexible polymer proximate to the standoff. The height of the standoff can be comparable to a height of the thin chip.
In an example, the apparatus can include an adhesive material disposed within the standoff well region at a portion of the exposed flexible polymer proximate to the standoff. The thin chip can be disposed on the adhesive material proximate to the standoff. The adhesive material can have a thickness of about 8 μm, about 10 μm, about 12 μm, about 15 μm, about 20 μm, about 25 μm, or about 30 μm. In some examples, the adhesive material comprises a conductive adhesive or a non-conductive adhesive.
In an example, the patterned portion of the first conductive material can be formed using laser ablation or etching. The flexible polymer can be a polyimide or a liquid crystal polymer.
In an example, the first conductive material includes copper, gold, aluminum, or some combination thereof. The substrate can be a copper-clad polyimide.
In certain examples, the layer of flexible polymer can have a thickness of about 8 μm, about 10 μm, about 15 μm, about 25 μm, about 35 μm, about 50 μm, about 60 μm, about 75 μm, or about 85 μm, and the layer of first conductive material can have a thickness of about 2 μm, about 5 μm, about 8 μm, about 12 μm, about 15 μm, about 25 μm, about 35 μm, about 50 μm, about 60 μm, or about 70 μm. In an example, the thin chip can have a thickness of about 2 μm, about 5 μm, about 8 μm, about 12 μm, about 15 μm, about 25 μm, about 35 μm, about 50 μm, about 60 μm, or about 70 μm.
In an example, the thin chip can be a thinned chip. The thinned chip can be formed from a chip that can be thinned using an etching process or a grinding process. In an example, the thin chip can be disposed within the standoff well region such that the height of the standoff can be greater than or about equal to the height of the thin chip. In another example, the thin chip can be disposed within the standoff well region such that the height of the standoff can be less than the height of the thin chip.
In an example, the thin chip can have a layer of first conductive material can have a thickness of about 2 μm, about 5 μm, about 8 μmin, about 12 μm, about 15 μm, about 25 μm, about 35 μm, about 50 μm, about 60 μm, or about 70 μm.
In one example, the apparatus can also include a polymer sheet disposed over the substrate. At least one via can be formed through the polymer sheet. The apparatus can also include a second conductive material disposed on a portion of the polymer sheet proximate to the at least one via, such that the second conductive material forms an electrical communication with an electrical contact of the thin chip.
In an example, the second conductive material can include titanium, tungsten, gold, nickel, chromium, or some combination thereof.
In an example, the standoff surrounds a portion of the thin chip. In another example, the standoff can completely surrounds the thin chip. In one example, a dielectric material can be disposed between the standoff and a portion of the thin chip.
In an example, at least one additional layer can be disposed on the first conductive material or on the flexible polymer, wherein the at least one additional layer positions the thin chip at a neutral mechanical plane of the apparatus.
According to the principles disclosed herein, a method for embedding thin chips can include providing a substrate comprising a standoff well region, wherein the substrate includes a layer of a first conductive material disposed on a layer of a flexible polymer. The substrate can also include at least a portion of the first conductive material can be patterned to form a standoff bordering a portion of exposed flexible polymer, thereby forming the standoff well region. The method can also include disposing a thin chip on a portion of the exposed flexible polymer proximate to the standoff such that a height of the standoff can be comparable to a height of the thin chip.
In an example, the method can also include disposing an adhesive material on a portion of the exposed flexible polymer proximate to the standoff, and disposing the thin chip on the adhesive material disposed on the portion of the exposed flexible polymer proximate to the standoff.
In some examples, the height of the standoff can be greater than or about equal to a height of a thin chip.
In certain examples, the disposing step can also include disposing the thin chip on a portion of the flexible polymer proximate to the standoff such that the height of the standoff can be greater than or about equal to the height of the thin chip.
In an example, the thin chip can be a thinned chip, and the thinning a chip can be provided by an etching process or a grinding process. The thinned chip can be disposed on a portion of the exposed flexible polymer proximate to the standoff such that a height of the standoff can be comparable to a height of the thinned chip.
In an example, the method can also include disposing a polymer sheet over the substrate and forming at least one via through the polymer sheet. The method can further include disposing a conductive material on a portion of the second polymer sheet proximate to the at least one via, such that the conductive material forms an electrical communication with an electrical contact of the thin chip.
In an example, the method can further include disposing at least one additional layer on the first conductive material or on the flexible polymer, wherein the at least one additional layer positions the thin chip at a neutral mechanical plane of the apparatus.
According to the principles disclosed herein, an apparatus can include a substrate with a polymer well region. The substrate can include a layer of a flexible polymer disposed on a layer of a first conductive material. The substrate can also include a cavity in at least a portion of the flexible polymer to form at least one polymer wall bordering a portion of exposed first conductive material, thereby forming the polymer well region. The apparatus can also include a thin chip disposed within the polymer well region on at least a portion of the exposed first conductive material proximate to the at least one polymer wall.
In an example, the apparatus can also include an adhesive material disposed within the polymer well region on at least a portion of the exposed first conductive material proximate to the at least one polymer wall, wherein the thin chip can be disposed on the adhesive material proximate to the at least one polymer wall.
In an example, the adhesive material can have a thickness of about 8 μm, about 10 μm, about 12 μm, about 15 μm, about 20 μm, about 25 μm, or about 30 μm. The adhesive material can include a conductive adhesive or a non-conductive adhesive.
In an example, the cavity can be formed using laser ablation or etching. The flexible polymer can be a polyimide or a liquid crystal polymer. The first conductive material can include copper, gold, aluminum, or some combination thereof. The substrate can include a copper-clad polyimide.
In an example, the layer of flexible polymer can have a thickness of about 8 μm, about 10 μm, about 15 μm, about 25 μm, about 35 μm, about 50 μm, about 60 μm, about 75 μm, or about 85 μm. The layer of first conductive material can have a thickness of about 2 μm, about 5 μm, about 8 μm, about 12 μm, about 15 μm, about 25 μm, about 35 μm, about 50 μm, about 60 μm, or about 70 μm. The thin chip can have a thickness of about 2 μm, about 5 μm, about 8 μm, about 12 μm, about 15 μm, about 25 μm, about 35 μm, about 50 μm, about 60 μm, or about 70 μm.
In an example, the thin chip can be a thinned chip. The thinned chip can be formed from a chip that can be thinned using an etching process or a grinding process. The thin chip can be disposed within the polymer well region such that the height of the at least one polymer wall can be greater than or about equal to the height of the thin chip. In an example, the thin chip can be disposed within the polymer well region such that the height of the at least one polymer wall can be less than the height of the thin chip.
In an example, the thin chip can have a layer of first conductive material can have a thickness of about 2 μm, about 5 μm, about 8 μm, about 12 μm, about 15 μm, about 25 μm, about 35 μm, about 50 μm, about 60 μm, or about 70 μm.
In an example, the apparatus can also include a polymer sheet disposed over the substrate. The apparatus can further include at least one via formed through the polymer sheet, and a second conductive material disposed on a portion of the polymer sheet proximate to the at least one via, such that the second conductive material forms an electrical communication with an electrical contact of the thin chip.
In an example, the second conductive material can include titanium, tungsten, gold, nickel, chromium, or some combination thereof.
In an example, the at least one polymer wall can surround a portion of the thin chip. The at least one polymer wall can completely surround the thin chip in another example.
In an example, a dielectric material can be disposed between the at least one polymer wall and a portion of the thin chip. The apparatus can further include at least one additional layer disposed on the first conductive material or on the flexible polymer, wherein the at least one additional layer positions the thin chip at a neutral mechanical plane of the apparatus.
In an example, the thin chip can be a thinned chip, and the thin chip can be thinned using an etching process or a grinding process, and disposed within the polymer well region on at least a portion of the exposed first conductive material proximate to the at least one polymer wall such that a height of the least one wall can be comparable to a height of the thinned chip.
According to the principles described herein, a method for embedding thin chips can include providing a substrate comprising a polymer well region, the substrate comprising a layer of a flexible polymer and a layer of a first conductive material, the polymer well region comprising at least one polymer wall formed from a portion of the flexible polymer and a base region formed from at least a portion of the first conductive material, and disposing the thin chip within the polymer well region on a portion of the first conductive material proximate to the at least one polymer wall.
In an example, the method can also include disposing an adhesive material at the portion of the first conductive proximate to the at least one polymer wall, and disposing the thin chip on the adhesive material proximate to the at least one polymer wall.
In an example, the thin chip can be disposed within the polymer well region such that the height of the at least one polymer wall can be greater than or about equal to the height of the thin chip. In another example, the thin chip can be disposed within the polymer well region such that the height of the at least one polymer wall can be less than the height of the thin chip. In yet another example, thin chip can be disposed within the polymer well region such that the first conductive material can be in physical and electrical communication with the thin chip.
In an example, the method can further include disposing a polymer sheet over the substrate, forming at least one via through the polymer sheet, and disposing a second conductive material on a portion of the polymer sheet proximate to the at least one via, such that the second conductive material forms an electrical communication with an electrical contact of the thin chip.
In another example, the method can further include disposing at least one additional layer disposed on the first conductive material or on the flexible polymer, wherein the at least one additional layer positions the thin chip at a neutral mechanical plane of the apparatus.
According to the principled disclosed herein, an apparatus can include a flexible substrate including a well region. The flexible substrate can include a polyimide or a liquid crystal polymer, and the flexible substrate can include a cavity forming a well region in the flexible substrate. The apparatus can also include a thin chip disposed within the well region, wherein the height of at least one polymer wall of the well region can be comparable to a height of the thin chip. The apparatus can further include a polymer adhesive material disposed in the well region in substantial contact with at least a portion of the thin chip.
In an example, the apparatus can also include a polymer sheet disposed over the flexible substrate and at least one via formed through the polymer sheet. The apparatus can also include a conductive material disposed on a portion of the polymer sheet proximate to the at least one via, such that the second conductive material forms an electrical communication with an electrical contact of the thin chip.
In an example, the apparatus can also include at least one via formed through the polymer adhesive material, and a conductive material disposed on a portion of the polymer adhesive material proximate to the at least one via, such that the conductive material forms an electrical communication with an electrical contact of the thin chip.
In an example, an adhesive material can be disposed within the well region, wherein the thin chip can be disposed on the adhesive material.
In another example, the thin chip can be disposed within the well region such that the height of the at least one polymer wall can be greater than or about equal to the height of the thin chip. The thin chip can be disposed within the well region such that the height of the at least one polymer wall can be less than the height of the thin chip. In an example, a dielectric material can be disposed between the at least one polymer wall and a portion of the thin chip.
The following publications, patents, and patent applications are hereby incorporated herein by reference in their entirety:
It should be appreciated that all combinations of the foregoing concepts and additional concepts described in greater detail below (provided such concepts are not mutually inconsistent) are contemplated as being part of the inventive subject matter disclosed herein. It also should be appreciated that terminology explicitly employed herein that also may appear in any disclosure incorporated by reference should be accorded a meaning most consistent with the particular concepts disclosed herein.
The skilled artisan will understand that the figures, described herein, are for illustration purposes only, and that the drawings are not intended to limit the scope of the disclosed teachings in any way. In some instances, various aspects or features may be shown exaggerated or enlarged to facilitate an understanding of the inventive concepts disclosed herein (the drawings are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the teachings). In the drawings, like reference characters generally refer to like features, functionally similar and/or structurally similar elements throughout the various figures.
Following below are more detailed descriptions of various concepts related to, and embodiments of, an apparatus and systems for embedding thinned chips in a flexible polymer. It should be appreciated that various concepts introduced above and described in greater detail below may be implemented in any of numerous ways, as the disclosed concepts are not limited to any particular manner of implementation. Examples of specific implementations and applications are provided primarily for illustrative purposes.
As used herein, the term “includes” means includes but is not limited to, the term “including” means including but not limited to. The term “based on” means based at least in part on. As used herein, the term “disposed on” or “disposed above” is defined to encompass “at least partially embedded in.”
With respect to substrates or other surfaces described herein in connection with various examples of the principles herein, any references to “top” surface and “bottom” surface are used primarily to indicate relative position, alignment and/or orientation of various elements/components with respect to the substrate and each other, and these terms do not necessarily indicate any particular frame of reference (e.g., a gravitational frame of reference). Thus, reference to a “bottom” of a substrate or a layer does not necessarily require that the indicated surface or layer be facing a ground surface. Similarly, terms such as “over,” “under,” “above,” “beneath” and the like do not necessarily indicate any particular frame of reference, such as a gravitational frame of reference, but rather are used primarily to indicate relative position, alignment and/or orientation of various elements/components with respect to the substrate (or other surface) and each other. The terms “disposed on” “disposed in” and “disposed over” encompass the meaning of “embedded in,” including “partially embedded in.” In addition, reference to feature A being “disposed on,” “disposed between,” or “disposed over” feature B encompasses examples where feature A is in contact with feature B, as well as examples where other layers and/or other components are positioned between feature A and feature B.
A system, apparatus and method described herein provides for embedding chips in well regions. The well region can be generated as a standoff well region or a polymer well region, as described herein.
Herein, a “thin chip” refers to chips or other device islands that are formed to have thicknesses of about 5 microns, about 8 microns, about 10 microns or more, or that have been thinned to thicknesses of about 5 microns, about 8 microns, about 10 microns or more. In various examples, the chips (or other device islands) can be fabricated as thin as (or be thinned to) about 5 microns, about 8 microns, about 15 microns, about 20 microns, about 25 microns, 30 microns, 37.5 microns, 42 microns, 50 microns or more.
An example standoff well region according to the principles described herein can be formed in a substrate that includes a layer of a conductive material disposed on a layer of a flexible polymer. Portion of the conductive material can be patterned to create standoffs bordering a portion of exposed flexible polymer, forming the standoff well region. According to the principles described herein, a thin chip can be disposed within the standoff well region on a portion of the exposed flexible polymer proximate to the standoff. Based on the thickness of the thin chips herein, the height of the standoff is comparable to the height of the thin chip.
In a non-limiting example, an adhesive can be disposed on the exposed portion of the flexible polymer prior to the thin chip being disposed in the standoff well region. The adhesive can be a non-conductive (dielectric) adhesive that is configured to withstand the temperatures of further processing.
In various examples, further processing can be performed on the apparatus including the thin chip disposed in the standoff well region. For example, an additional adhesive can be disposed over the thin chip to fill the void between the thin chip and the standoff of the standoff well region. As another example, at least one additional sheet of a flexible polymer can be disposed on the apparatus or vias can be generated to establish an electrical communication with the thin chip, as described in greater detail below.
The principles described herein can be applied to rigid or flexible printed circuit boards. The printed circuit boards are referred to herein as flex and/or PCB. As a non-limiting example, a PCB board or flex sheet that includes a metal clad polymer sheet can be patterned, including being etched, to generate at least one standoff well region in the metal layer that extends down to the polymer. A thin chip is disposed in the standoff well region on the exposed portions of the polymer sheet of the flex board. An adhesive can be placed above the nestled chip and a second flex sheet is placed above the polymer. The sandwiched structure can be subjected to further processing to cause the adhesive to flow around at least a portion of the chip. At least one via can be formed through the top flex board down to the chip, and filled with a conductive material, to provide electrical communication with the bond pads of the thin chip.
An example polymer well region according to the principles described herein can be formed in a layer of flexible polymer disposed on a layer of a conductive material. A cavity can be formed in at least a portion of the flexible polymer to form the at least one polymer wall bordering a portion of the exposed first conductive material to form the polymer well region. A thin chip can be disposed in the polymer well region on at least a portion of the exposed first conductive material proximate to the at least one polymer wall.
In various examples, based on the thickness of the flexible polymer of the substrate or the depth from the surface to which the cavity extends into the flexible polymer, the height of the polymer wall may be comparable to the height of the thin chip. In other examples, the thin chip can be mounted in the polymer well region such that the level of the top surface of the thin chip is comparable to the top surface of the thin chip.
In a non-limiting example, an adhesive can be disposed on the exposed portion of the conductive material prior to the thin chip being disposed in the polymer well region. The adhesive can be a conductive adhesive or a non-conductive (dielectric) adhesive that is configured to withstand the temperatures of further processing. The conductive adhesive can be used to establish electrical communication between the conductive material of the substrate and conductive contact pads on the bottom surface of the thin chip.
In various example, further processing can be performed on the apparatus including the thin chip disposed in the polymer well region. For example, an additional adhesive can be disposed over the thin chip to fill the void between the thin chip and the polymer wall of the polymer well region.
In another example, at least one additional sheet of a flexible polymer can be disposed on the apparatus including the thin chip disposed in the polymer well region. Vias can be generated to establish an electrical communication with the thin chip, as described in greater detail below. In this example, the additional sheet of a flexible polymer can include a layer of a conductive material, and can be disposed on the apparatus such that the side that includes the conductive material layer is directed away from the thin chip. In this example, the conductive layer of the substrate and the conductive layer of the additional sheet would be located on the outside of the “sandwich” with the thin chip embedded within the sandwich. Vias can be generated through the conductive material layers and the flexible polymer layers as described herein to facilitate the electrical communication to the thin chip.
In an example system, apparatus and method, an embedded device formed according to the principles herein can be encapsulated using an encapsulant, such as but not limited to a polymer, to form an encapsulated device. The encapsulated device can be placed on the skin to perform a measurement or other diagnostic or therapeutic procedure. In an example, the embedded device and the encapsulated device are is configured to withstand deformation in more than one direction (for example, in x, y and/or z-directions), torsion, compression, expansion, or other change in conformation.
In an example use, the encapsulated structure can be placed on a surface, such as but not limited to skin or other tissue. In an example use, the encapsulated structure can be configured such that it conforms to a contour of the surface.
In various examples, the flexible polymer and/or the encapsulant can be formed from the same polymer or polymeric material or different polymers or polymeric materials. Non-limiting examples of applicable polymers or polymeric materials include, but are not limited to, a polyimide, a polyethylene terephthalate (PET), or a polyurethane. Other non-limiting examples of applicable polymers or polymeric materials include plastics, elastomers, thermoplastic elastomers, elastoplastics, thermostats, thermoplastics, acrylates, acetal polymers, biodegradable polymers, cellulosic polymers, fluoropolymers, nylons, polyacrylonitrile polymers, polyamide-imide polymers, polyarylates, polybenzimidazole, polybutylene, polycarbonate, polyesters, polyetherimide, polyethylene, polyethylene copolymers and modified polyethylenes, polyketones, poly(methyl methacrylate, polymethylpentene, polyphenylene oxides and polyphenylene sulfides, polyphthalamide, polypropylene, polyurethanes, styrenic resins, sulphone based resins, vinyl-based resins, or any combinations of these materials. In an example, a polymer or polymeric material herein can be a DYMAX® polymer (Dymax Corporation, Torrington, Conn.). or other UV curable polymer.
In an example, a method of embedding chips inside rigid or flexible printed circuit boards (flex, PCB) is provided. The method can be used to embed chips and/or other components, including but not limited to light emitting diodes (LEDs) or interconnects, inside polymers or polymeric materials. The embedding process provides for protection of the embedded device against the environment and for connecting them to each other to form larger electronic circuits, including integrated electronic circuits.
The conductive material of any of the examples described herein can be but is not limited to a metal, a metal alloy, or other conductive material. In an example, the metal or metal alloy of the coating may include but is not limited to aluminum or a transition metal (including copper, silver, gold, platinum, zinc, nickel, titanium, chromium, or palladium, or any combination thereof) and any applicable metal alloy, including alloys with carbon. In other non-limiting example, suitable conductive materials may include a semiconductor-based conductive material, including a silicon-based conductive material, indium tin oxide or other transparent conductive oxide, or Group III-IV conductor (including GaAs).
In any example herein, the layer of flexible polymer can have a thickness of about 8 μm, about 10 μm, about 15 μm, about 25 μm, about 35 μm, about 50 μm, about 60 μm, about 75 μm, or about 85 μm.
In any example herein, the layer of conductive material can have a thickness of about 2 μm, about 5 μm, about 8 μm, about 12 μm, about 15 μm, about 25 μm, about 35 μm, about 50 μm, about 60 μm, or about 70 μm.
In any example herein, the thin chip can have a thickness of about 2 μm, about 5 μm, about 8 μm, about 12 μm, about 15 μm, about 25 μm, about 35 μm, about 50 μm, about 60 μm, or about 70 μm
In any example herein, the adhesive material can have a thickness of about 8 μm, about 10 μm, about 12 μm, about 15 μm, about 20 μm, about 25 μm, or about 30 μm.
In the example systems, apparatus and methods described herein, the thin chip 101 can be one or more passive electronic components and/or active electronic components. Non-limiting examples of components that can be embedded according to any of the principles described herein include a transistor, an amplifier, a photodetector, a photodiode array, a display, a light-emitting device, a photovoltaic device, a sensor, a LED, a semiconductor laser array, an optical imaging system, a large-area electronic device, a logic gate array, a microprocessor, an integrated circuit, an electronic device, an optical device, an opto-electronic device, a mechanical device, a microelectromechanical device, a nanoelectromechanical device, a microfluidic device, a thermal device, or other device structures.
In an example, embedded devices according to the principles described herein can be formed by embedding a plurality of chips (or other device islands) and/or a plurality of the interconnects in the flexible polymer according to the principles herein. In an example, the embedded device (e.g., thin chip 101) can be formed from an integrated device, or formed from a plurality of chips (or other device islands) interconnected by a plurality of interconnects, that is embedded according to the principles herein.
The thin chip 101 (including an integrated device or device island as described herein) can be made thinner than the thickness of the conductive coating on the flexible polymer layer 104 from which the standoffs 103 of the standoff well region 102 is created. The conductive material coating can include, but is not limited to, metal traces or other metal coatings. The standoff well region 102 can be formed in the conductive coating through, e.g., patterning the conductive material coating on a flexible polymer and etching through to the surface of the flexible polymer 104. The etch process might include to the removal of some surface portion of the flexible polymer 104 as well. In another examples, the patterning may be performed with laser ablation or similar patterning process. After the conductive material coating on the polymer layer has been patterned and the standoff well region formed, the chip (including any device island) can be disposed and fixed between walls of the conductive coating “well,” creating features above the polymer that are roughly the same height as the walls of the standoff well region. In other examples, the height of the standoff 105 can be greater than or less than the height of the thin chip 101.
In various examples, the standoff well 102 can be formed such that the positioned chip or other device island is shorter than or approximately equal to the well height 104. In other examples, the well 102 can be formed such that the positioned the thin chip 101 (including a device island and/or an interconnect) is taller than the height of the walls of the well. The standoffs 103 of the standoff well region 103 can be about 80%, about 90%, about, 100%, about 110%, about 120%, about 140%, or about 150% of the thickness of the thin chip 101 (including a device island and/or interconnect). In other examples, the standoffs 103 of the standoff well region 103 can be about twice the thickness of the thin chip 101 or other device island and/or interconnect.
In some examples, and as described further in connection with
In an example, the embedded device is configured such that an embedded serpentine interconnect retains substantial range of motion and stretchability within the plane of the embedded device. In an example, the embedded device is configured such that an embedded serpentine interconnect retains substantial range of motion such that portions of it can rotate out of the plane to provide increased stretchability.
In an example process, metal traces, and accordingly the well wall height 105, can be typically 35 μm (“1 oz. copper”), 17.5 μm (“½ oz. copper”), 9 μm (“¼ oz. copper”) or 5 μm. Printed circuit boards specify copper thickness in ounces. This represents the thickness of 1 ounce of copper rolled out to an area of 1 square foot. The thickness of 1 oz. of copper is 1.4 mils or 35.56 microns.
In an example, the thin chips 101 (including any other device islands and/or interconnects) can be thinned to about 25 μm to be more suitable for 1 oz. copper traces (which determines the height of the standoff s). In an example, the thin chips 101 (including any other device islands and/or interconnects) can be thinned to 10 μm to be suitable for ½ oz. copper traces (which determines the well wall or standoff height).
In an example, some margin can be left between the thin chip and the standoff for disposing an adhesion layer, which is either dispensed on the flexible polymer layer 104 prior to placement of the thin chip 101 (including any other device island and/or interconnects)), or which is pre-adhered to the thin chips (including any other device islands and/or interconnects) prior to being disposed in the standoff well region 102.
In an example, an additional layer of conductive material may be added to the metallization on the chip or other device island. Some amount of metallization is generally provided at selected portions of the thin chip 101 (including any other device island and/or interconnects) to facilitate creating an electrical contact to the functional capability of the thin chip (including any other device island and/or interconnects). This metallization can be about 1 μm to about 2 μm thick. In some examples, the metallization is made of aluminum. However, other materials can be used for the metallization, such as any other metal or metal alloy described hereinabove in connection with the conductive material. Laser drilling may be used to create channels through the flexible polymer and the adhesive material to create access to the metallization of the thin chip 101 or other device island within the embedded device structure. It can be difficult to control the laser drilling so that it stops at the metallization and does not remove the metallization or puncture the thin chip 101 or other device island. For example, about 5 μm thickness of copper may be needed to terminate the laser drilling without the risk of removing the metallization or puncture. Other techniques for creating the through channels, including etching, can present similar risks of damage to the thin chip 101 or other device island. The additional layer of conductive material added to the metallization on the thin chip 101 or other device island in this example provides extra thickness that can help to withstand the laser drilling. In an example, the additional layer of conductive material (such as but not limited to added metal or metal stacks) is selected to have properties such as but not limited to adherence to the metallization of the chip or other device island; possible to be added to a thickness of about 2 μm to about 7 μm; and/or the ability to support, and form an electrical communication with, the material that is electroplated into via, such as but not limited to a metal or metal alloy electroplating (including Cu electroplating). The additional layer of conductive material (such as but not limited to the added metal) can be patterned and etched to form the standoffs 103.
The additional layer of conductive material may be added to the metallization on the chip or other device island in a variety of ways. For example, an under-bump metallization (UBM) suitable for copper micro-pillars could be carried out, without following through with the usual bumps that would be added, to generate the additional layer of conductive material on the metallization. The UBM can be carried out based on, e.g., a multilayer chromium-copper system (Cr:Cr—Cu:Cu), titanium-nickel-vanadium system (Ti—Ni—V), titanium-copper system (Ti—Cu), titanium-tungsten-gold system (Ti—W—Au), or a nickel-gold system (Ni—Au). In another example, the additional layer of conductive material may be added using electroplating on to the chip (or other device island) pads, after deposition of one or more suitable seed layers. The electroplating can be caused to deposit only on the regions of the chip (or other device island) where the metallization exists. In another example, conductive material can be added to larger portions of the chip (or other device island) and can be patterned and selectively removed (e.g., by etching) to be present only in the regions of the thin chip 101 (or other device island) with the original metallization to provide the additional layer of conductive material.
In an example, an embedded device formed according to the principles herein can be patterned or sliced to remove a portion of the flexible polymer that does not enclose a portion of the chip (or other device island) and/or the interconnect. For example, the embedded device can be patterned along the outline and/or contour of the device structure that is embedded within the flexible polymer. According to any of these examples, the embedded device can be patterned along the outline and/or contour of a serpentine interconnect of the embedded device.
The example systems, apparatus and methods described herein exploit chips or other device islands that are thinner than the surrounding standoffs or well walls to embed the chips or other device islands between flex board layers. In a non-limiting example, the surrounding standoffs or well walls are formed from metal traces.
In an non-limiting example, the surrounding standoffs or well walls are formed from a process of writing an “ink” of conductive material, rather than from patterning and etching a coating layer. In an non-limiting example, the “ink” of conductive material can be written using an inkjet printer device or other device.
The example systems, apparatus and methods described herein provide for good adhesion of layers, conformability of embedding material around the chip or other device islands, elimination of air pockets, and prevention of ingress of liquids from the outside.
The example systems, apparatus and methods described herein provide for embedding thin chips or other device islands and/or stretchable interconnects to provide entire assemblies that are flexible. In an example, the embedded device formed in the flexible polymer can be cut or otherwise formed into serpentine traces that can cause the entire assembly circuit to become even become stretchable, and not merely just flexible.
The example embedded devices according to the systems, apparatus and methods described herein present little or no possibility that a device component will “pop off” or be otherwise detached, if the embedded structure is bent, or otherwise deformed.
In a non-limiting example, the chip or other device island and/or the interconnect is disposed close to the neutral mechanical plane of the overall embedded device. Through choice of suitable flexible polymer layers above and/or below the chips or other device islands and/or stretchable interconnects, the strain on the functional layer of the embedded device can be minimized. A functional layer herein can include the chips or other device islands and/or stretchable interconnects. In an example, the flexible polymer can be formed of a material having a Young's modulus of about 3 GPa. Non-limiting examples of such flexible polymers include a polyimide, such as but not limited to KAPTON® (available from DuPont, Delaware).
In an example, any of the systems or apparatus according to the principles herein, the chips 101 or other device islands and/or stretchable interconnects can be positioned such that the functional layer of the embedded device lies at a neutral mechanical plane (NMP) or neutral mechanical surface (NMS) of the system or apparatus. The NMP or NMS lies at the position through the thickness of the device layers for the system or apparatus where any applied strains are minimized or substantially zero. In an example, the functional layer of a system or apparatus according to the principles described herein includes a plurality of chips or other device islands and/or stretchable interconnects.
The location of the NMP or NMS can be changed relative to the layer structure of the system or apparatus through introduction of materials that aid in strain isolation in various layers of the system or apparatus. In various examples, polymer materials described herein can be introduced to serve as strain isolation materials. For example, the encapsulating material described hereinabove also can be used to position the NMP or NMS, e.g., by varying the encapsulating material type and/or layer thickness. For example, the thickness of encapsulating material disposed over the functional layers described herein may be modified (i.e., decreased or increased) to depress the functional layer relative to the overall system or apparatus thickness, which can vary the position of the NMP or NMS relative to the functional layer. In another example, the type of encapsulating, including any differences in the elastic (Young's) modulus of the encapsulating material.
In another example, at least a partial intermediate layer of a material capable of providing strain isolation can be disposed between the functional layer and the flexible substrate to position the NMP or NMS relative to the functional layer. In an example, the intermediate layer can be formed from any of the polymer materials described herein, aerogel materials or any other material with applicable elastic mechanical properties.
Based on the principles described herein, the NMP or NMS can be positioned proximate to, coincident with or adjacent to a layer of the system or apparatus that includes the strain-sensitive component, such as but not limited to the functional layer. The layer can be considered “strain-sensitive” if it is prone to fractures or its performance can be otherwise impaired in response to a level of applied strain. In an example where the NMP or NMS is proximate to a strain-sensitive component rather than coincident with it, the position of the NMP or NMS may still provide a mechanical benefit to the strain-sensitive component, such as substantially lowering the strain that would otherwise be exerted on the strain-sensitive component in the absence of strain isolation layers. In various examples, the NMS or NMP layer is considered proximate to the strain-sensitive component that provides at least 10%, 20%, 50% or 75% reduction in strain in the strain-sensitive component for a given applied strain, e.g., where the embedded device is deformed.
In various examples, the encapsulating material and/or the intermediate layer material may be disposed at positions relative to the embedded device that are coincident with the strain-sensitive component. For example, portions of the encapsulating material and/or the intermediate layer material may be interspersed with portions of the strain-sensitive component, through the embedding layer, including at positions within the functional layer.
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In the example systems, apparatus and methods described herein, the thin chip 401 can be one or more passive electronic components and/or active electronic components. Non-limiting examples of components that can be embedded according to any of the principles described herein include a transistor, an amplifier, a photodetector, a photodiode array, a display, a light-emitting device, a photovoltaic device, a sensor, a LED, a semiconductor laser array, an optical imaging system, a large-area electronic device, a logic gate array, a microprocessor, an integrated circuit, an electronic device, an optical device, an opto-electronic device, a mechanical device, a microelectromechanical device, a nanoelectromechanical device, a microfluidic device, a thermal device, or other device structures.
In an example, embedded devices according to the principles described herein can be formed by embedding a plurality of chips (or other device islands) and/or a plurality of the interconnects in the polymer well region formed in the flexible polymer according to the principles herein. In an example, the embedded device (e.g., thin chip 401) can be formed from an integrated device, or formed from a plurality of chips (or other device islands) interconnected by a plurality of interconnects, that is embedded according to the principles herein.
The thin chip 401 (including an integrated device or device island as described herein) can be made thinner than the thickness of the flexible polymer layer 404 from which the polymer walls 403 of the polymer well region 402 is created. The conductive material coating can include, but is not limited to, metal traces or other metal coatings. The polymer well region 402 can be formed in the flexible polymer through, e.g., etching through to the surface of the conductive material 404, drilling, or laser ablation of the flexible polymer. After the conductive material coating on the polymer layer has been patterned and the polymer well region formed, the chip (including any device island) can be disposed and fixed between walls of the polymer “well,” creating features above the polymer that are roughly the same height as the walls of the polymer well region. In other examples, the height 405 of the polymer wall 403 can be greater than or less than the height of the thin chip 401.
In various examples, the polymer well region 402 can be formed such that the positioned chip or other device island is shorter than or approximately equal to the well height 405. In other examples, the polymer well region 402 can be formed such that the positioned thin chip 401 (including a device island and/or an interconnect) is taller than the height of the walls of the well. The polymer walls 403 of the polymer well region 403 can be about 80%, about 90%, about, 100%, about 110%, about 120%, about 140%, or about 150% of the thickness of the thin chip 401 (including a device island and/or interconnect). In other examples, the polymer walls 403 of the polymer well region 403 can be about twice the thickness of the thin chip 401 or other device island and/or interconnect.
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In another example, the polymer layer 505 does not include a base conductive material layer 506. In this example, the cavity generated to create the polymer wall 503 and the polymer well region 507 does not extend completely through the polymer layer 505. Rather, the cavity is created through a portion of the thickness of the polymer layer 505, into which the die 504 is later embedded. This example can be used to provide embedded thin chips based on commercially-available polyimides or liquid crystal polymers, including the polymers of PCB boards, without need for the more expensive processing of a photo-definable spin-on polyimide.
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While various inventive embodiments have been described and illustrated herein, those of ordinary skill in the art will readily envision a variety of other means and/or structures for performing the function and/or obtaining the results and/or one or more of the advantages described herein, and each of such variations and/or modifications is deemed to be within the scope of the inventive embodiments described herein. More generally, those skilled in the art will readily appreciate that all parameters, dimensions, materials, and configurations described herein are meant to be examples and that the actual parameters, dimensions, materials, and/or configurations will depend upon the specific application or applications for which the inventive teachings is/are used. Those skilled in the art will recognize, or be able to ascertain using no more than routine experimentation, many equivalents to the specific inventive embodiments described herein. It is, therefore, to be understood that the foregoing embodiments are presented by way of example only and that inventive embodiments may be practiced otherwise than as specifically described. Inventive embodiments of the present disclosure are directed to each individual feature, system, article, material, kit, and/or method described herein. In addition, any combination of two or more such features, systems, articles, materials, kits, and/or methods, if such features, systems, articles, materials, kits, and/or methods are not mutually inconsistent, is included within the inventive scope of the present disclosure.
The above-described embodiments of the invention may be implemented in any of numerous ways. For example, some embodiments may be implemented using hardware, software or a combination thereof. When any aspect of an embodiment is implemented at least in part in software, the software code may be executed on any suitable processor or collection of processors, whether provided in a single device or computer or distributed among multiple devices/computers.
Also, the technology described herein may be embodied as a method, of which at least one example has been provided. The acts performed as part of the method may be ordered in any suitable way. Accordingly, embodiments may be constructed in which acts are performed in an order different than illustrated, which may include performing some acts simultaneously, even though shown as sequential acts in illustrative embodiments.
All definitions, as defined and used herein, should be understood to control over dictionary definitions, definitions in documents incorporated by reference, and/or ordinary meanings of the defined terms.
The indefinite articles “a” and “an,” as used herein in the specification, unless clearly indicated to the contrary, should be understood to mean “at least one.”
The phrase “and/or,” as used herein in the specification, should be understood to mean “either or both” of the elements so conjoined, i.e., elements that are conjunctively present in some cases and disjunctively present in other cases. Multiple elements listed with “and/or” should be construed in the same fashion, i.e., “one or more” of the elements so conjoined. Other elements may optionally be present other than the elements specifically identified by the “and/or” clause, whether related or unrelated to those elements specifically identified. Thus, as a non-limiting example, a reference to “A and/or B”, when used in conjunction with open-ended language such as “comprising” can refer, in one embodiment, to A only (optionally including elements other than B); in another embodiment, to B only (optionally including elements other than A); in yet another embodiment, to both A and B (optionally including other elements); etc.
As used herein in the specification, “or” should be understood to have the same meaning as “and/or” as defined above. For example, when separating items in a list, “or” or “and/or” shall be interpreted as being inclusive, i.e., the inclusion of at least one, but also including more than one, of a number or list of elements, and, optionally, additional unlisted items. Only terms clearly indicated to the contrary, such as “only one of” or “exactly one of,” or “consisting of,” will refer to the inclusion of exactly one element of a number or list of elements. In general, the term “or” as used herein shall only be interpreted as indicating exclusive alternatives (i.e. “one or the other but not both”) when preceded by terms of exclusivity, such as “either,” “one of,” “only one of,” or “exactly one of.”
As used herein in the specification, the phrase “at least one,” in reference to a list of one or more elements, should be understood to mean at least one element selected from any one or more of the elements in the list of elements, but not necessarily including at least one of each and every element specifically listed within the list of elements and not excluding any combinations of elements in the list of elements. This definition also allows that elements may optionally be present other than the elements specifically identified within the list of elements to which the phrase “at least one” refers, whether related or unrelated to those elements specifically identified. Thus, as a non-limiting example, “at least one of A and B” (or, equivalently, “at least one of A or B,” or, equivalently “at least one of A and/or B”) can refer, in one embodiment, to at least one, optionally including more than one, A, with no B present (and optionally including elements other than B); in another embodiment, to at least one, optionally including more than one, B, with no A present (and optionally including elements other than A): in yet another embodiment, to at least one, optionally including more than one, A, and at least one, optionally including more than one, B (and optionally including other elements); etc
This application is a continuation of U.S. patent application Ser. No. 14/859,112, filed Sep. 18, 2015, now U.S. Pat. No. 9,583,428, which is a continuation of U.S. patent application Ser. No. 13/844,638, filed Mar. 15, 2013, now U.S. Pat. No. 9,171,794, which claims priority to and the benefits of U.S. provisional application Ser. No. 61/711,629, filed Oct. 9, 2012, entitled “Embedding Thinned Chips and Interconnects in Flex Polymer,” each of which are hereby incorporated by reference herein in their entireties, including drawings.
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| 20130197319 | Monty | Aug 2013 | A1 |
| 20130200268 | Rafferty | Aug 2013 | A1 |
| 20130211761 | Brandsma | Aug 2013 | A1 |
| 20130214300 | Lerman | Aug 2013 | A1 |
| 20130215467 | Fein | Aug 2013 | A1 |
| 20130225965 | Ghaffari | Aug 2013 | A1 |
| 20130237150 | Royston | Sep 2013 | A1 |
| 20130245388 | Rafferty | Sep 2013 | A1 |
| 20130253285 | Bly | Sep 2013 | A1 |
| 20130274562 | Ghaffari | Oct 2013 | A1 |
| 20130285836 | Proud | Oct 2013 | A1 |
| 20130313713 | Arora | Nov 2013 | A1 |
| 20130316442 | Meurville | Nov 2013 | A1 |
| 20130316487 | De Graff | Nov 2013 | A1 |
| 20130316645 | Li | Nov 2013 | A1 |
| 20130320503 | Nuzzo | Dec 2013 | A1 |
| 20130321373 | Yoshizumi | Dec 2013 | A1 |
| 20130325357 | Walerow | Dec 2013 | A1 |
| 20130328219 | Chau | Dec 2013 | A1 |
| 20130331914 | Lee | Dec 2013 | A1 |
| 20140001058 | Ghaffari | Jan 2014 | A1 |
| 20140012160 | Ghaffari | Jan 2014 | A1 |
| 20140012242 | Lee | Jan 2014 | A1 |
| 20140022746 | Hsu | Jan 2014 | A1 |
| 20140039290 | De Graff | Feb 2014 | A1 |
| 20140097944 | Fastert | Apr 2014 | A1 |
| 20140110859 | Rafferty | Apr 2014 | A1 |
| 20140125458 | Bachman | May 2014 | A1 |
| 20140140020 | Rogers | May 2014 | A1 |
| 20140188426 | Fastert | Jul 2014 | A1 |
| 20140191236 | Nuzzo | Jul 2014 | A1 |
| 20140206976 | Thompson | Jul 2014 | A1 |
| 20140216524 | Rogers | Aug 2014 | A1 |
| 20140240932 | Hsu | Aug 2014 | A1 |
| 20140240985 | Kim | Aug 2014 | A1 |
| 20140249520 | Ghaffari | Sep 2014 | A1 |
| 20140275835 | Lamego | Sep 2014 | A1 |
| 20140303452 | Ghaffari | Oct 2014 | A1 |
| 20140303680 | Donnelly | Oct 2014 | A1 |
| 20140308930 | Tran | Oct 2014 | A1 |
| 20140340857 | Hsu | Nov 2014 | A1 |
| 20140350883 | Carter | Nov 2014 | A1 |
| 20140371547 | Gutenberg | Dec 2014 | A1 |
| 20140374872 | Rogers | Dec 2014 | A1 |
| 20140375465 | Fenuccio | Dec 2014 | A1 |
| 20150001462 | Rogers | Jan 2015 | A1 |
| 20150019135 | Kacyvenski | Jan 2015 | A1 |
| 20150025394 | Hong | Jan 2015 | A1 |
| 20150035680 | Li | Feb 2015 | A1 |
| 20150035743 | Rosener | Feb 2015 | A1 |
| 20150069617 | Arora | Mar 2015 | A1 |
| 20150099976 | Ghaffari | Apr 2015 | A1 |
| 20150100135 | Ives | Apr 2015 | A1 |
| 20150164377 | Nathan | Jun 2015 | A1 |
| 20150181700 | Rogers | Jun 2015 | A1 |
| 20150194817 | Lee | Jul 2015 | A1 |
| 20150237711 | Rogers | Aug 2015 | A1 |
| 20150241288 | Keen | Aug 2015 | A1 |
| 20150248833 | Arne | Sep 2015 | A1 |
| 20150260713 | Ghaffari | Sep 2015 | A1 |
| 20150272652 | Ghaffari | Oct 2015 | A1 |
| 20150286913 | Fastert | Oct 2015 | A1 |
| 20150320472 | Ghaffari | Nov 2015 | A1 |
| 20150335254 | Fastert | Nov 2015 | A1 |
| 20150342036 | Elolampi | Nov 2015 | A1 |
| 20160015962 | Shokoueinejad Maragheh | Jan 2016 | A1 |
| 20160027834 | de Graff | Jan 2016 | A1 |
| 20160045162 | De Graff | Feb 2016 | A1 |
| 20160081192 | Hsu | Mar 2016 | A1 |
| 20160086909 | Garlock | Mar 2016 | A1 |
| 20160095652 | Lee | Apr 2016 | A1 |
| 20160099214 | Dalal | Apr 2016 | A1 |
| 20160099227 | Dalal | Apr 2016 | A1 |
| 20160111353 | Rafferty | Apr 2016 | A1 |
| 20160135740 | Ghaffari | May 2016 | A1 |
| 20160178251 | Johnson | Jun 2016 | A1 |
| 20160213262 | Ghaffari | Jul 2016 | A1 |
| 20160213424 | Ghaffari | Jul 2016 | A1 |
| 20160228640 | Pindado | Aug 2016 | A1 |
| 20160232807 | Ghaffari | Aug 2016 | A1 |
| 20160240061 | Li | Aug 2016 | A1 |
| 20160249174 | Patel | Aug 2016 | A1 |
| 20160256070 | Murphy | Sep 2016 | A1 |
| 20160284544 | Nuzzo | Sep 2016 | A1 |
| 20160287177 | Huppert | Oct 2016 | A1 |
| 20160293794 | Nuzzo | Oct 2016 | A1 |
| 20160309594 | Hsu | Oct 2016 | A1 |
| 20160322283 | McMahon | Nov 2016 | A1 |
| 20160338646 | Lee | Nov 2016 | A1 |
| 20160361015 | Wang | Dec 2016 | A1 |
| 20160371957 | Ghaffari | Dec 2016 | A1 |
| 20160381789 | Rogers | Dec 2016 | A1 |
| 20170019988 | McGrane | Jan 2017 | A1 |
| 20170049397 | Sun | Feb 2017 | A1 |
| 20170071491 | Litt | Mar 2017 | A1 |
| 20170079588 | Ghaffari | Mar 2017 | A1 |
| 20170079589 | Ghaffari | Mar 2017 | A1 |
| 20170083312 | Pindado | Mar 2017 | A1 |
| 20170086747 | Ghaffari | Mar 2017 | A1 |
| 20170086748 | Ghaffari | Mar 2017 | A1 |
| 20170086749 | Ghaffari | Mar 2017 | A1 |
| 20170095670 | Ghaffari | Apr 2017 | A1 |
| 20170095732 | Ghaffari | Apr 2017 | A1 |
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| 1604723 | Apr 2005 | CN |
| 101276794 | Oct 2008 | CN |
| 102113089 | Jun 2011 | CN |
| 202068986 | Dec 2011 | CN |
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| 2005-052212 | Mar 2005 | JP |
| 2005108942 | Apr 2005 | JP |
| 2007294724 | Nov 2007 | JP |
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| 2009-170173 | Jul 2009 | JP |
| 2011517370 | Jun 2011 | JP |
| 2011176112 | Sep 2011 | JP |
| 2012023237 | Feb 2012 | JP |
| WO 1999038211 | Jul 1999 | WO |
| WO 2003021679 | Mar 2003 | WO |
| WO 2005083546 | Sep 2005 | WO |
| WO 2005122285 | Dec 2005 | WO |
| WO 2007003019 | Jan 2007 | WO |
| WO 2007024983 | Mar 2007 | WO |
| WO 2007116344 | Oct 2007 | WO |
| WO 2007136726 | Nov 2007 | WO |
| WO 2008030960 | Mar 2008 | WO |
| WO2008056499 | May 2008 | WO |
| WO 2009111641 | Sep 2009 | WO |
| WO 2009114689 | Sep 2009 | WO |
| WO 2010036807 | Apr 2010 | WO |
| WO 2010042653 | Apr 2010 | WO |
| WO 2010042957 | Apr 2010 | WO |
| WO 2010046883 | Apr 2010 | WO |
| WO 2010056857 | May 2010 | WO |
| WO 2010081137 | Jul 2010 | WO |
| WO 2010082993 | Jul 2010 | WO |
| WO 2010102310 | Sep 2010 | WO |
| WO 2010132552 | Nov 2010 | WO |
| WO 2011003181 | Jan 2011 | WO |
| WO 2011041727 | Apr 2011 | WO |
| WO 2011084450 | Jul 2011 | WO |
| WO 2011084709 | Jul 2011 | WO |
| WO 2011124898 | Oct 2011 | WO |
| WO 2011127331 | Oct 2011 | WO |
| WO 2012125494 | Sep 2012 | WO |
| WO 2012166686 | Dec 2012 | WO |
| WO 2013010171 | Jan 2013 | WO |
| WO 2013022853 | Feb 2013 | WO |
| WO 2013033724 | Mar 2013 | WO |
| WO 2013034987 | Mar 2013 | WO |
| WO 2013049716 | Apr 2013 | WO |
| WO 2013052919 | Apr 2013 | WO |
| WO 2013144738 | Oct 2013 | WO |
| WO 2013170032 | Nov 2013 | WO |
| WO 2014007871 | Jan 2014 | WO |
| WO 2014058473 | Apr 2014 | WO |
| WO 2014059032 | Apr 2014 | WO |
| WO 2014106041 | Jul 2014 | WO |
| WO 2014110176 | Jul 2014 | WO |
| WO 2014124044 | Aug 2014 | WO |
| WO 2014124049 | Aug 2014 | WO |
| WO 2014130928 | Aug 2014 | WO |
| WO 2014130931 | Aug 2014 | WO |
| WO 2014186467 | Nov 2014 | WO |
| WO 2014197443 | Dec 2014 | WO |
| WO 2014205434 | Dec 2014 | WO |
| WO 2015021039 | Feb 2015 | WO |
| WO 2015054312 | Apr 2015 | WO |
| WO 2015077559 | May 2015 | WO |
| WO 2015080991 | Jun 2015 | WO |
| WO 2015102951 | Jul 2015 | WO |
| WO 2015103483 | Jul 2015 | WO |
| WO 2015103580 | Jul 2015 | WO |
| WO 2015127458 | Aug 2015 | WO |
| WO 2015134588 | Sep 2015 | WO |
| WO 2015138712 | Sep 2015 | WO |
| WO 2015145471 | Oct 2015 | WO |
| WO 2016048888 | Mar 2016 | WO |
| WO 2016054512 | Apr 2016 | WO |
| WO 2016057318 | Apr 2016 | WO |
| WO 2016081244 | May 2016 | WO |
| WO 20160127050 | Aug 2016 | WO |
| WO 2016134306 | Aug 2016 | WO |
| WO 2016-140961 | Sep 2016 | WO |
| WO 2016205385 | Dec 2016 | WO |
| WO 2017015000 | Jan 2017 | WO |
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| Number | Date | Country | |
|---|---|---|---|
| 20170200670 A1 | Jul 2017 | US |
| Number | Date | Country | |
|---|---|---|---|
| 61711629 | Oct 2012 | US |
| Number | Date | Country | |
|---|---|---|---|
| Parent | 14859112 | Sep 2015 | US |
| Child | 15412993 | US | |
| Parent | 13844638 | Mar 2013 | US |
| Child | 14859112 | US |
