Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device and manufacturing method thereof improving moisture resistance of a FeRAM. After a probe test using a pad, a metal film is formed to cover the pad in an opening of a protective film and a region from the pad to an opening outer periphery of the protective film. On the metal film, a metal bump is formed. The metal film is formed to have a two-layer structure of the first and second metal films. Materials of the lower and upper layers are selected mainly in consideration of adhesion to the protective film and adhesion to the metal bump, respectively. Film formation conditions thereof are set to provide metal films with a desired quality and thickness. Thus, penetration of moisture from the pad or the periphery into a ferroelectric capacitor can be prevented and therefore, occurrence of potential inversion abnormalities due to penetrated moisture can be effectively suppressed.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic sectional view showing an essential part of a FeRAM element according to a first embodiment.

FIG. 2 shows a formation flow of a FeRAM element according to a first embodiment.

FIG. 3 is a schematic sectional view showing an essential part of a FeRAM element according to a second embodiment.

FIG. 4 is a schematic sectional view showing an essential part of a FeRAM element according to a third embodiment.

FIG. 5 is a schematic sectional view showing an essential part of a FeRAM element according to a fourth embodiment.

FIG. 6 is a schematic sectional view showing an essential part of a FeRAM element according to a fifth embodiment.

FIG. 7 is a schematic sectional view showing an essential part of a FeRAM element according to a sixth embodiment.

FIG. 8 is a schematic sectional view showing an essential part of a packaging structure according to a seventh embodiment.

FIG. 9 is a schematic sectional view showing an essential part of a packaging structure according to an eighth embodiment.

FIG. 10 is a schematic sectional view showing an essential part of a packaging structure according to a ninth embodiment.

FIG. 11 is a schematic sectional view showing an essential part of a packaging structure according to a tenth embodiment.

FIG. 12 is a schematic sectional view showing an essential part of a packaging structure according to an eleventh embodiment.

FIG. 13 is a schematic sectional view showing an essential part of a packaging structure according to a twelfth embodiment.

FIG. 14 schematically shows a state where in a FeRAM element, a metal wire is connected to an electrode pad after a probe test.

Claims

1. A semiconductor device, comprising: a semiconductor substrate;an electrode pad provided over the semiconductor substrate through an insulating film, the pad having a mechanical injury;a conductive film for covering the electrode pad; andan external connection terminal connected to the conductive film.

2. The semiconductor device according to claim 1, wherein the conductive film is composed of a plurality of conductive layers.

3. The semiconductor device according to claim 2, wherein a lowermost layer of the conductive film is a material capable of adhering to the insulating film.

4. The semiconductor device according to claim 2, wherein an uppermost layer of the conductive film is a material capable of adhering to a member electrically connected to the pad.

5. The semiconductor device according to claim 1, wherein the conductive film is a bump.

6. The semiconductor device according to claim 1, wherein the pad has a concave portion.

7. The semiconductor device according to claim 1, wherein the conductive film is extended and provided over an insulating layer around the electrode pad.

8. The semiconductor device according to claim 1, wherein the external connection terminal connected to the conductive film is a bump or a wire.

9. The semiconductor device according to claim 1, wherein the electrode pad is connected to a ferroelectric capacitive element provided over the semiconductor substrate through a conductive layer.

10. A manufacturing method of a semiconductor device, comprising the steps of: forming an electrode pad over a semiconductor substrate;bringing a probe into contact with the electrode pad;covering the electrode pad to form a conductive film; andconnecting an external connection terminal to the conductive film.

11. The manufacturing method according to claim 10, wherein, in the step of forming the conductive film, the conductive film is formed by a plurality of layers.

12. The manufacturing method according to claim 10, further comprising the step of extending and forming the conductive film over an insulating layer around the electrode pad.

13. The manufacturing method according to claim 12, wherein the conductive film is formed to cover the insulating layer in the length of at least 1 μm.

14. The manufacturing method according to claim 10, further comprising the step of forming, astride the insulating layer around the electrode pad and the end of the conductive film, a peeling preventive film for suppressing peeling of the end of the conductive film.

15. The manufacturing method according to claim 10, further comprising the step of connecting a bump or a wire on the conductive film.

16. The manufacturing method according to claim 10, wherein, in the step of forming the conductive film, a bump is formed as the conductive film.

17. A semiconductor device, comprising: a semiconductor substrate;an electrode pad provided over the semiconductor substrate through an insulating film, the pad having a mechanical injury; anda conductive film for covering the electrode pad.