Generally, the conventional flip chip bumps have vertical or nearly vertical sidewalls and are connected to an underlying trace (such as on a substrate, a printed circuit board, an interposer, another chip, or the like) using a solder reflow process.
The solder joint method forms intermetallic compounds (IMCs) between the metal-solder interface. The IMCs may cause higher electrical resistivity (contact resistance). The higher electrical resistivity leads to increased electromigration, which further increases the contact resistance. In addition, with a small area under bump metallurgy (UBM), the solder/metal electromigration issue may be of greater concern.
As device packaging dimensions shrink, the smaller distance between the bump and an adjacent trace may lead to undesirable bridging during reflow. In addition, as device packaging dimensions shrink interconnect bump sizes also shrink. The reduction in bump size has led to an increase in interconnect resistance and capacitance (RC) that is the cause of signal transmission delay (RC delay). Smaller bump sizes also increases the risk of extremely low-k (ELK) dielectric delamination.
For a more complete understanding of the present disclosure, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
Corresponding numerals and symbols in the different figures generally refer to corresponding parts unless otherwise indicated. The figures are drawn to clearly illustrate the relevant aspects of the embodiments and are not necessarily drawn to scale.
The making and using of the presently preferred embodiments are discussed in detail below. It should be appreciated, however, that the present disclosure provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative and do not limit the scope of the disclosure.
The present disclosure will be described with respect to preferred embodiments in a specific context, namely a ladder bump structure for a bump on trace (BOT) assembly or a flip-chip chip scale package (FCCSP). The concepts in the disclosure may also apply, however, to other semiconductor structures or circuits.
Referring now to
In an embodiment, a passivation layer 26 overlies the integrated circuit 22 (and/or the insulating layer 24). As shown in
Various layers and features of the integrated circuit 22, including transistors, interconnect layers, post passivation interconnects, redistribution layers, and the like are omitted from the figures for the sake of clarity, as they are not necessary to an understanding of the present disclosure.
Still referring to
Still referring to
In an embodiment, the metal ladder bump 16 is formed from a suitable material such as, for example, copper (Cu), nickel (Ni), gold (Au), palladium (Pd), titanium (Ti), and so on, or alloys thereof. The mounted end 34 of the metal ladder bump 16, which is the end closest to the integrated circuit 22, has a greater width than the distal end 32 of the metal ladder bump 16, which is the end furthest from the integrated circuit 22. In an embodiment, the distal end 32 has a width of between about 10 μm to about 80 μm. In an embodiment, the mounted end 34 has a width of between about 20 μm to about 90 μm.
From the foregoing, it should be recognized that the mounted end 34 is wider or larger than the distal end 32. This condition may be satisfied by, for example, making the mounted end 34 of the metal ladder bump 16 larger relative to the distal end 32. This condition may also be satisfied by, for example, making the distal end 32 of the metal ladder bump 16 smaller relative to the mounted end 34.
One skilled in the art will recognize that it is not desirable to increase the pitch between adjacent bumps. This means that the width of the distal end 32 should not be increased beyond design dimensions. Hence, in order to get the truncated cone structure for the metal ladder bump 16, the width of the mounted end 34 should be increased in order to obtain the advantageous structure. The wider width of the mount end 34 may also serve to lessen the possibility of delamination between the metal ladder bump 16 and adjacent layers and may also serve to lessen stress impact on underlying layers such as underlying ELK layers (e.g., insulating layer 24). As shown in
In an embodiment, a photolithography process is used to shape the metal ladder bump 16 as shown in
Still referring to
In addition to the above, the substrate trace 18 is structurally and electrically coupled to the metal ladder bump 16 through direct metal-to-metal bonding. Indeed, ends of the metal ladder bump 16 and the substrate trace 18 are each free of solder. Because direct metal-to-metal bonding is used instead of solder, the metal ladder bump 16 is operably coupled to the substrate trace without forming any undesirably intermetallic compounds at or proximate the bonded joint. In addition, the absence of solder reduces the potential for undesirably bridging of the substrate trance 18 and/or the metal ladder bump 16 with an adjacent substrate trace 18.
In an embodiment, the direct metal-to-metal bonding process includes several steps. For example, the top portions or surfaces of the metal ladder bump 16 and/or substrate trace 18 are appropriately cleaned to remove debris or contaminants that may detrimentally affect bonding or bonding strength. Thereafter, the metal ladder bump 16 and the substrate trace 18 are aligned with each other. Once aligned, a permanent bonding process such as, for example, a thermo-compression bonding is performed to bond the metal ladder bump 16 to the substrate trace 18. In an embodiment, an annealing step may be performed to increase the bond strength. For example, the metal ladder bump 16 and the substrate trace 18 may be subjected to a temperature of about 100° C. to about 400° C. for about 1 hour to about 2 hours.
Referring now to
In an embodiment, the second integrated circuit 46 includes a second passivation layer 48, a second insulating layer 50 (e.g., ELK dielectric), and a second contact element 52 (e.g., aluminum pad). Various layers and features of the second integrated circuit 46, including transistors, interconnect layers, post passivation interconnects, redistribution layers, and the like are omitted from the figures for the sake of clarity, as they are not necessary to an understanding of the present disclosure. In addition, the second metal ladder bump 42 may be formed in similar fashion and with similar dimensions relative to the metal ladder bump 16 of
As shown in
As shown in
One skilled in the art will recognize that the specific dimensions for the various widths and spacing discussed herein are matters of design choice and are dependent upon the particular technology node, and application employed.
Referring now to
From the foregoing it should be recognized that embodiment BOT structure 10 and chip-to-chip structure 40 provide advantageous features. For example, without having to rely on solder bonding, the BOT structure 10 and chip-to-chip structure 40 are free of any undesirably intermetallic compounds (IMCs). In addition, the BOT structure 10 and chip-to-chip structure 40 provide lower electrical resistivity, lower risk of electromigration failure, and a significantly reduced interconnect RC delay relative to conventional devices. Moreover, the structures 10, 40 inhibit or prevent delamination of the insulating layer 24, 46 (the ELK dielectric). In addition, the smaller top surface area of the metal ladder bump 16, substrate trace 18, and/or second metal ladder bump 42 provide for easier bonding. Still further, the bonding time and the interfacial seam voids may be reduced using the structures 10, 40 and methods disclosed herein.
The following references are related to subject matter of the present application. Each of these references is incorporated herein by reference in its entirety:
An embodiment bump on trace (BOT) structure includes a contact element supported by an integrated circuit, an under bump metallurgy (UBM) feature electrically coupled to the contact element, a metal ladder bump mounted on the under bump metallurgy feature, the metal ladder bump having a first tapering profile, and a substrate trace mounted on a substrate, the substrate trace having a second tapering profile and coupled to the metal ladder bump through direct metal-to-metal bonding.
An embodiment chip-to-chip structure includes a first contact element supported by a first integrated circuit, a first under bump metallurgy (UBM) feature electrically coupled to the first contact element, a first metal ladder bump mounted on the first under bump metallurgy feature, the first metal ladder bump having a first tapering profile, and a second metal ladder bump mounted on a second under bump metallurgy feature of a second integrated circuit, the second metal ladder bump having a second tapering profile and coupled to the second metal ladder bump through direct metal-to-metal bonding.
An embodiment method of forming a bump on trace (BOT) structure includes forming a contact element on an integrated circuit, electrically coupling an under bump metallurgy (UBM) feature to the contact element, mounting a metal ladder bump on the under bump metallurgy feature, the metal ladder bump having a first tapering profile, mounting a substrate trace on a substrate, the substrate trace having a second tapering profile, and coupling the metal ladder bump and the substrate trace together through direct metal-to-metal bonding.
While this invention has been described with reference to illustrative embodiments, this description is not intended to be construed in a limiting sense. Various modifications and combinations of the illustrative embodiments, as well as other embodiments of the invention, will be apparent to persons skilled in the art upon reference to the description. It is therefore intended that the appended claims encompass any such modifications or embodiments.
This application is a continuation application of U.S. patent application Ser. No. 15/351,184, filed Nov. 14, 2016, entitled “Solderless Interconnection Structure and Method of Forming Same,” which is a divisional application of U.S. patent application Ser. No. 13/744,361, filed Jan. 17, 2013, entitled “Interconnection Structure and Method of Forming Same,” which application claims the benefit of U.S. Provisional Application No. 61/707,609, filed on Sep. 28, 2012, entitled “Interconnection Structure Method of Forming Same,” of U.S. Provisional Application No. 61/707,644, filed on Sep. 28, 2012, entitled “Metal Bump and Method of Manufacturing Same,” of U.S. Provisional Application No. 61/702,624, filed on Sep. 18, 2012, entitled “Ladd Bump Structures and Methods of Making the Same,” and of U.S. Provisional Application No. 61/707,442, filed on Sep. 28, 2012, entitled “Bump Structure and Method of Forming Same,” which applications are hereby incorporated herein by reference.
Number | Name | Date | Kind |
---|---|---|---|
4258382 | Harris | Mar 1981 | A |
4536421 | Matsuzawa et al. | Aug 1985 | A |
4811082 | Jacobs et al. | Mar 1989 | A |
4830723 | Galvagni et al. | May 1989 | A |
4990462 | Sliwa, Jr. | Feb 1991 | A |
5075253 | Sliwa, Jr. | Dec 1991 | A |
5075965 | Carey et al. | Dec 1991 | A |
5130779 | Agarwala et al. | Jul 1992 | A |
5134460 | Brady et al. | Jul 1992 | A |
5277756 | Dion | Jan 1994 | A |
5334804 | Love et al. | Aug 1994 | A |
5380681 | Hsu | Jan 1995 | A |
5431328 | Chang et al. | Jul 1995 | A |
5440239 | Zappella et al. | Aug 1995 | A |
5470787 | Greer | Nov 1995 | A |
5481133 | Hsu | Jan 1996 | A |
5492266 | Hoebener et al. | Feb 1996 | A |
5508561 | Tago et al. | Apr 1996 | A |
5542601 | Fallon et al. | Aug 1996 | A |
5565379 | Baba | Oct 1996 | A |
5587337 | Idaka et al. | Dec 1996 | A |
5680187 | Nagayama et al. | Oct 1997 | A |
5743006 | Beratan | Apr 1998 | A |
5790377 | Schreiber et al. | Aug 1998 | A |
5796591 | Dalal et al. | Aug 1998 | A |
5796592 | Tanaka | Aug 1998 | A |
5816478 | Kaskoun et al. | Oct 1998 | A |
5889326 | Tanaka | Mar 1999 | A |
5922496 | Dalal et al. | Jul 1999 | A |
5977599 | Adrian | Nov 1999 | A |
6002172 | Desai et al. | Dec 1999 | A |
6002177 | Gaynes et al. | Dec 1999 | A |
6025650 | Tsuji et al. | Feb 2000 | A |
6051273 | Dalal et al. | Apr 2000 | A |
6082610 | Shangguan et al. | Jul 2000 | A |
6091141 | Heo | Jul 2000 | A |
6099935 | Brearley et al. | Aug 2000 | A |
6130476 | LaFontaine, Jr. et al. | Oct 2000 | A |
6137184 | Ikegami | Oct 2000 | A |
6181010 | Nozawa | Jan 2001 | B1 |
6187678 | Gaynes et al. | Feb 2001 | B1 |
6229216 | Ma et al. | May 2001 | B1 |
6229220 | Saitoh et al. | May 2001 | B1 |
6236115 | Gaynes et al. | May 2001 | B1 |
6249051 | Chang et al. | Jun 2001 | B1 |
6250541 | Shangguan et al. | Jun 2001 | B1 |
6259159 | Dalal et al. | Jul 2001 | B1 |
6271059 | Bertin et al. | Aug 2001 | B1 |
6279815 | Correia et al. | Aug 2001 | B1 |
6291891 | Higashi et al. | Sep 2001 | B1 |
6336262 | Dalal et al. | Jan 2002 | B1 |
6344234 | Dalal et al. | Feb 2002 | B1 |
6346469 | Greer | Feb 2002 | B1 |
6355501 | Fung et al. | Mar 2002 | B1 |
6358847 | Li et al. | Mar 2002 | B1 |
6388322 | Goossen et al. | May 2002 | B1 |
6424037 | Ho et al. | Jul 2002 | B1 |
6426556 | Lin | Jul 2002 | B1 |
6434016 | Zeng et al. | Aug 2002 | B2 |
6448661 | Kim et al. | Sep 2002 | B1 |
6461895 | Liang et al. | Oct 2002 | B1 |
6469394 | Wong et al. | Oct 2002 | B1 |
6475897 | Hosaka | Nov 2002 | B1 |
6476503 | Imamura | Nov 2002 | B1 |
6492197 | Rinne | Dec 2002 | B1 |
6498308 | Sakamoto | Dec 2002 | B2 |
6562653 | Ma et al. | May 2003 | B1 |
6562657 | Lin | May 2003 | B1 |
6570248 | Ahn et al. | May 2003 | B1 |
6573598 | Ohuchi et al. | Jun 2003 | B2 |
6578754 | Tung | Jun 2003 | B1 |
6583846 | Yanagawa et al. | Jun 2003 | B1 |
6592019 | Tung | Jul 2003 | B2 |
6600222 | Levardo | Jul 2003 | B1 |
6607938 | Kwon et al. | Aug 2003 | B2 |
6661085 | Kellar et al. | Dec 2003 | B2 |
6713844 | Tatsuta | Mar 2004 | B2 |
6731003 | Joshi et al. | May 2004 | B2 |
6762076 | Kim et al. | Jul 2004 | B2 |
6790748 | Kim et al. | Sep 2004 | B2 |
6887769 | Kellar et al. | May 2005 | B2 |
6908565 | Kim et al. | Jun 2005 | B2 |
6908785 | Kim | Jun 2005 | B2 |
6924551 | Rumer et al. | Aug 2005 | B2 |
6940169 | Jin et al. | Sep 2005 | B2 |
6940178 | Kweon et al. | Sep 2005 | B2 |
6943067 | Greenlaw | Sep 2005 | B2 |
6946384 | Kloster et al. | Sep 2005 | B2 |
6972490 | Chang et al. | Dec 2005 | B2 |
6975016 | Kellar et al. | Dec 2005 | B2 |
6998216 | He et al. | Feb 2006 | B2 |
7037804 | Kellar et al. | May 2006 | B2 |
7056807 | Kellar et al. | Jun 2006 | B2 |
7087538 | Staines et al. | Aug 2006 | B2 |
7135766 | Costa et al. | Nov 2006 | B1 |
7151009 | Kim et al. | Dec 2006 | B2 |
7157787 | Kim et al. | Jan 2007 | B2 |
7192803 | Lin et al. | Mar 2007 | B1 |
7215033 | Lee et al. | May 2007 | B2 |
7245023 | Lin | Jul 2007 | B1 |
7251484 | Aslanian | Jul 2007 | B2 |
7271483 | Lin et al. | Sep 2007 | B2 |
7271484 | Reiss et al. | Sep 2007 | B2 |
7276799 | Lee et al. | Oct 2007 | B2 |
7279795 | Periaman et al. | Oct 2007 | B2 |
7307005 | Kobrinsky et al. | Dec 2007 | B2 |
7317256 | William et al. | Jan 2008 | B2 |
7320928 | Kloster et al. | Jan 2008 | B2 |
7345350 | Sinha | Mar 2008 | B2 |
7382049 | Ho et al. | Jun 2008 | B2 |
7402442 | Condorelli et al. | Jul 2008 | B2 |
7402508 | Kaneko | Jul 2008 | B2 |
7402515 | Arana et al. | Jul 2008 | B2 |
7410884 | Ramanathan et al. | Aug 2008 | B2 |
7432592 | Shi et al. | Oct 2008 | B2 |
7459785 | Daubenspeck et al. | Dec 2008 | B2 |
7470996 | Yoneyama et al. | Dec 2008 | B2 |
7494845 | Hwang et al. | Feb 2009 | B2 |
7495179 | Kubota et al. | Feb 2009 | B2 |
7528494 | Furukawa et al. | May 2009 | B2 |
7531890 | Kim | May 2009 | B2 |
7554201 | Kang et al. | Jun 2009 | B2 |
7557597 | Anderson et al. | Jul 2009 | B2 |
7569935 | Fan | Aug 2009 | B1 |
7576435 | Chao | Aug 2009 | B2 |
7659631 | Kamins et al. | Feb 2010 | B2 |
7714235 | Pedersen et al. | May 2010 | B1 |
7804177 | Lu et al. | Sep 2010 | B2 |
7834450 | Kang | Nov 2010 | B2 |
7939939 | Zeng et al. | May 2011 | B1 |
7946331 | Trezza et al. | May 2011 | B2 |
8026128 | Pendse | Sep 2011 | B2 |
8076232 | Pendse | Dec 2011 | B2 |
8093729 | Trezza | Jan 2012 | B2 |
8120175 | Farooq et al. | Feb 2012 | B2 |
8130475 | Kawamori et al. | Mar 2012 | B2 |
8158489 | Huang et al. | Apr 2012 | B2 |
8207604 | Haba et al. | Jun 2012 | B2 |
8232640 | Tomoda et al. | Jul 2012 | B2 |
8258055 | Hwang et al. | Sep 2012 | B2 |
8313213 | Lin et al. | Nov 2012 | B2 |
8367939 | Ishido | Feb 2013 | B2 |
8435881 | Choi et al. | May 2013 | B2 |
8536458 | Darveaux et al. | Sep 2013 | B1 |
8576368 | Kim et al. | Nov 2013 | B2 |
8823166 | Lin et al. | Sep 2014 | B2 |
9105530 | Lin et al. | Aug 2015 | B2 |
9355980 | Chen et al. | May 2016 | B2 |
9425136 | Kuo et al. | Aug 2016 | B2 |
9496233 | Lin et al. | Nov 2016 | B2 |
9583687 | Hwang | Feb 2017 | B2 |
20010013423 | Dalal et al. | Aug 2001 | A1 |
20010038147 | Higashi et al. | Nov 2001 | A1 |
20020033412 | Tung | Mar 2002 | A1 |
20020084528 | Kim et al. | Jul 2002 | A1 |
20020100974 | Uchiyama | Aug 2002 | A1 |
20020106832 | Hotchkiss et al. | Aug 2002 | A1 |
20020197811 | Sato | Dec 2002 | A1 |
20030049886 | Salmon | Mar 2003 | A1 |
20030092219 | Ohuchi et al. | May 2003 | A1 |
20030094963 | Fang | May 2003 | A1 |
20030166331 | Tong et al. | Sep 2003 | A1 |
20030216025 | Lu et al. | Nov 2003 | A1 |
20030218250 | Kung et al. | Nov 2003 | A1 |
20030233133 | Greenberg et al. | Dec 2003 | A1 |
20040004284 | Lee et al. | Jan 2004 | A1 |
20040007779 | Arbuthnot et al. | Jan 2004 | A1 |
20040140538 | Harvey | Jul 2004 | A1 |
20040159944 | Datta et al. | Aug 2004 | A1 |
20040166661 | Lei | Aug 2004 | A1 |
20040212098 | Pendse | Oct 2004 | A1 |
20040251546 | Lee et al. | Dec 2004 | A1 |
20050017376 | Tsai | Jan 2005 | A1 |
20050062153 | Saito et al. | Mar 2005 | A1 |
20050158900 | Lee | Jul 2005 | A1 |
20050212114 | Kawano et al. | Sep 2005 | A1 |
20050224991 | Yeo | Oct 2005 | A1 |
20050253264 | Aiba et al. | Nov 2005 | A1 |
20050277283 | Lin et al. | Dec 2005 | A1 |
20060012024 | Lin et al. | Jan 2006 | A1 |
20060017160 | Huang | Jan 2006 | A1 |
20060038303 | Sterrett et al. | Feb 2006 | A1 |
20060051954 | Lin et al. | Mar 2006 | A1 |
20060055032 | Chang et al. | Mar 2006 | A1 |
20060076677 | Daubenspeck et al. | Apr 2006 | A1 |
20060209245 | Mun et al. | Sep 2006 | A1 |
20060223313 | Yoon et al. | Oct 2006 | A1 |
20060279881 | Sato | Dec 2006 | A1 |
20060292824 | Beyne et al. | Dec 2006 | A1 |
20070001280 | Hua | Jan 2007 | A1 |
20070012337 | Hillman et al. | Jan 2007 | A1 |
20070018294 | Sutardja | Jan 2007 | A1 |
20070020906 | Chiu et al. | Jan 2007 | A1 |
20070023483 | Yoneyama et al. | Feb 2007 | A1 |
20070045840 | Varnau | Mar 2007 | A1 |
20070057022 | Mogami et al. | Mar 2007 | A1 |
20070114663 | Brown et al. | May 2007 | A1 |
20070200234 | Gerber et al. | Aug 2007 | A1 |
20080003402 | Haba et al. | Jan 2008 | A1 |
20080003715 | Lee | Jan 2008 | A1 |
20080023850 | Lu et al. | Jan 2008 | A1 |
20080087998 | Kamins | Apr 2008 | A1 |
20080128911 | Koyama | Jun 2008 | A1 |
20080150135 | Oyama et al. | Jun 2008 | A1 |
20080169544 | Tanaka et al. | Jul 2008 | A1 |
20080180376 | Kim et al. | Jul 2008 | A1 |
20080194095 | Daubenspeck et al. | Aug 2008 | A1 |
20080217047 | Hu | Sep 2008 | A1 |
20080218061 | Chao et al. | Sep 2008 | A1 |
20080277785 | Hwan et al. | Nov 2008 | A1 |
20090025215 | Murakami et al. | Jan 2009 | A1 |
20090042144 | Kitada et al. | Feb 2009 | A1 |
20090045499 | Kim et al. | Feb 2009 | A1 |
20090075469 | Furman et al. | Mar 2009 | A1 |
20090087143 | Jeon | Apr 2009 | A1 |
20090091024 | Zeng et al. | Apr 2009 | A1 |
20090096092 | Patel | Apr 2009 | A1 |
20090108443 | Jiang | Apr 2009 | A1 |
20090146316 | Jadhav et al. | Jun 2009 | A1 |
20090149016 | Park | Jun 2009 | A1 |
20090166861 | Lehr et al. | Jul 2009 | A1 |
20090174067 | Lin | Jul 2009 | A1 |
20090218702 | Beyne et al. | Sep 2009 | A1 |
20090233436 | Kim et al. | Sep 2009 | A1 |
20090250814 | Pendse et al. | Oct 2009 | A1 |
20100007019 | Pendse | Jan 2010 | A1 |
20100044860 | Haba et al. | Feb 2010 | A1 |
20100052473 | Kimura | Mar 2010 | A1 |
20100084763 | Yu | Apr 2010 | A1 |
20100141880 | Koito et al. | Jun 2010 | A1 |
20100193944 | Castro et al. | Aug 2010 | A1 |
20100200279 | Kariya et al. | Aug 2010 | A1 |
20100252926 | Kato et al. | Oct 2010 | A1 |
20100258950 | Li et al. | Oct 2010 | A1 |
20100270458 | Lake et al. | Oct 2010 | A1 |
20100276787 | Yu et al. | Nov 2010 | A1 |
20100314745 | Masumoto et al. | Dec 2010 | A1 |
20100327422 | Lee et al. | Dec 2010 | A1 |
20110001250 | Lin et al. | Jan 2011 | A1 |
20110024902 | Lin et al. | Feb 2011 | A1 |
20110038147 | Lin et al. | Feb 2011 | A1 |
20110074022 | Pendse | Mar 2011 | A1 |
20110084386 | Pendse | Apr 2011 | A1 |
20110101519 | Hsiao et al. | May 2011 | A1 |
20110101526 | Hsiao et al. | May 2011 | A1 |
20110169158 | Varanasi | Jul 2011 | A1 |
20110177686 | Zeng et al. | Jul 2011 | A1 |
20110186986 | Chuang et al. | Aug 2011 | A1 |
20110193220 | Kuo et al. | Aug 2011 | A1 |
20110227219 | Alvarado et al. | Sep 2011 | A1 |
20110244675 | Huang et al. | Oct 2011 | A1 |
20110248399 | Pendse | Oct 2011 | A1 |
20110260317 | Lu et al. | Oct 2011 | A1 |
20110285011 | Hwang et al. | Nov 2011 | A1 |
20110285023 | Shen et al. | Nov 2011 | A1 |
20120007230 | Hwang et al. | Jan 2012 | A1 |
20120007231 | Chang | Jan 2012 | A1 |
20120007232 | Haba | Jan 2012 | A1 |
20120012997 | Shen et al. | Jan 2012 | A1 |
20120025365 | Haba | Feb 2012 | A1 |
20120040524 | Kuo | Feb 2012 | A1 |
20120049346 | Lin et al. | Mar 2012 | A1 |
20120091577 | Hwang et al. | Apr 2012 | A1 |
20120098120 | Yu et al. | Apr 2012 | A1 |
20120098124 | Wu | Apr 2012 | A1 |
20120145442 | Gupta et al. | Jun 2012 | A1 |
20120146168 | Hsieh et al. | Jun 2012 | A1 |
20120223428 | Pendse | Sep 2012 | A1 |
20120306080 | Yu et al. | Dec 2012 | A1 |
20130026622 | Chuang et al. | Jan 2013 | A1 |
20130026629 | Nakano | Jan 2013 | A1 |
20130087920 | Jeng et al. | Apr 2013 | A1 |
20130093079 | Tu et al. | Apr 2013 | A1 |
20130181340 | Uehling et al. | Jul 2013 | A1 |
20130252418 | Arvin et al. | Sep 2013 | A1 |
20130270699 | Kuo et al. | Oct 2013 | A1 |
20130277830 | Yu et al. | Oct 2013 | A1 |
20130288473 | Chuang et al. | Oct 2013 | A1 |
20130341785 | Fu et al. | Dec 2013 | A1 |
20140048929 | Cha et al. | Feb 2014 | A1 |
20140054764 | Lu et al. | Feb 2014 | A1 |
20140054769 | Yoshida et al. | Feb 2014 | A1 |
20140054770 | Yoshida et al. | Feb 2014 | A1 |
20140061897 | Lin et al. | Mar 2014 | A1 |
20140061924 | Chen et al. | Mar 2014 | A1 |
20140077358 | Chen et al. | Mar 2014 | A1 |
20140077359 | Tsai et al. | Mar 2014 | A1 |
20140077360 | Lin et al. | Mar 2014 | A1 |
20140077365 | Lin et al. | Mar 2014 | A1 |
20140117533 | Lei et al. | May 2014 | A1 |
20140264890 | Breuer et al. | Sep 2014 | A1 |
20140346669 | Wang | Nov 2014 | A1 |
20140353820 | Yu et al. | Dec 2014 | A1 |
20150091160 | Reber | Apr 2015 | A1 |
20150325542 | Lin et al. | Nov 2015 | A1 |
20160190090 | Yu et al. | Jun 2016 | A1 |
20160254240 | Chen | Sep 2016 | A1 |
20160329293 | Cha et al. | Nov 2016 | A1 |
Number | Date | Country |
---|---|---|
101080138 | Nov 2007 | CN |
101188219 | May 2008 | CN |
102254871 | Nov 2011 | CN |
102386158 | Mar 2012 | CN |
102468197 | May 2012 | CN |
102543898 | Jul 2012 | CN |
1387402 | Feb 2004 | EP |
1020110002816 | Jan 2011 | KR |
1020110128532 | Nov 2011 | KR |
200826265 | Jun 2008 | TW |
200915452 | Apr 2009 | TW |
201133662 | Oct 2011 | TW |
201143007 | Dec 2011 | TW |
2009140238 | Nov 2009 | WO |
Entry |
---|
Garrou, Phil, “IFTLE 58 Fine Pitch Microjoints, Cu Pillar Bump-on-Lead, Xillinx Interposer Reliability,” Solid State Technology, Insights for Electronic Manufacturing, Jul. 18, 2011, 3 pages. |
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20190295971 A1 | Sep 2019 | US |
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---|---|---|---|
61707609 | Sep 2012 | US | |
61707644 | Sep 2012 | US | |
61707442 | Sep 2012 | US | |
61702624 | Sep 2012 | US |
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Parent | 13744361 | Jan 2013 | US |
Child | 15351184 | US |
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Parent | 15351184 | Nov 2016 | US |
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