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Manufacture or treatment of micro-structural devices or systems
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Industry
CPC
B81C2201/00
This industry / category may be too specific. Please go to a parent level for more data
Parent Industries
B
PERFORMING OPERATIONS TRANSPORTING
B81
Micro-structural technology
B81C
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICRO-STRUCTURAL DEVICES OR SYSTEMS
Current Industry
B81C2201/00
Manufacture or treatment of micro-structural devices or systems
Sub Industries
B81C2201/01
in or on a substrate
B81C2201/0101
Shaping material Structuring the bulk substrate or layers on the substrate Film patterning
B81C2201/0102
Surface micromachining
B81C2201/0104
Chemical-mechanical polishing [CMP]
B81C2201/0105
Sacrificial layer
B81C2201/0107
Sacrificial metal
B81C2201/0108
Sacrificial polymer, ashing of organics
B81C2201/0109
Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
B81C2201/0111
Bulk micromachining
B81C2201/0112
Bosch process
B81C2201/0114
Electrochemical etching, anodic oxidation
B81C2201/0115
Porous silicon
B81C2201/0116
Thermal treatment for structural rearrangement of substrate atoms
B81C2201/0118
Processes for the planarization of structures
B81C2201/0119
involving only addition of materials
B81C2201/0121
involving addition of material followed by removal of parts of said material
B81C2201/0122
Selective addition
B81C2201/0123
Selective removal
B81C2201/0125
Blanket removal
B81C2201/0126
Processes for the planarization of structures not provided for in B81C2201/0119 - B81C2201/0125
B81C2201/0128
Processes for removing material
B81C2201/0129
Diamond turning
B81C2201/013
Etching
B81C2201/0132
Dry etching
B81C2201/0133
Wet etching
B81C2201/0135
Controlling etch progression
B81C2201/0136
by doping limited material regions
B81C2201/0138
Monitoring physical parameters in the etching chamber
B81C2201/0139
with the electric potential of an electrochemical etching
B81C2201/014
by depositing an etch stop layer
B81C2201/0142
Processes for controlling etch progression not provided for in B81C2201/0136 - B81C2201/014
B81C2201/0143
Focussed beam
B81C2201/0145
Spark erosion
B81C2201/0146
Processes for removing material not provided for in B81C2201/0129 - B81C2201/0145
B81C2201/0147
Film patterning
B81C2201/0149
Forming nanoscale microstructures using auto-arranging or self-assembling material
B81C2201/015
Imprinting
B81C2201/0152
Step and Flash imprinting, UV imprinting
B81C2201/0153
Imprinting techniques not provided for in B81C2201/0152
B81C2201/0154
other processes for film patterning not provided for in B81C2201/0149 - B81C2201/015
B81C2201/0156
Lithographic techniques
B81C2201/0157
Gray-scale mask technology
B81C2201/0159
Lithographic techniques not provided for in B81C2201/0157
B81C2201/016
Passivation
B81C2201/0161
Controlling physical properties of the material
B81C2201/0163
Controlling internal stress of deposited layers
B81C2201/0164
by doping the layer
B81C2201/0166
by ion implantation
B81C2201/0167
by adding further layers of materials having complementary strains
B81C2201/0169
by post-annealing
B81C2201/017
Methods for controlling internal stress of deposited layers not provided for in B81C2201/0164 - B81C2201/0169
B81C2201/0171
Doping materials
B81C2201/0173
Thermo-migration of impurities from a solid
B81C2201/0174
for making multi-layered devices, film deposition or growing
B81C2201/0176
Chemical vapour Deposition
B81C2201/0177
Epitaxy
B81C2201/0178
Oxidation
B81C2201/018
Plasma polymerization
B81C2201/0181
Physical Vapour Deposition [PVD]
B81C2201/0183
Selective deposition
B81C2201/0184
Digital lithography
B81C2201/0185
Printing
B81C2201/0187
Controlled formation of micro- or nanostructures using a template positioned on a substrate
B81C2201/0188
Selective deposition techniques not provided for in B81C2201/0184 - B81C2201/0187
B81C2201/019
Bonding or gluing multiple substrate layers
B81C2201/0191
Transfer of a layer from a carrier wafer to a device wafer
B81C2201/0192
by cleaving the carrier wafer
B81C2201/0194
the layer being structured
B81C2201/0195
the layer being unstructured
B81C2201/0197
Processes for making multi-layered devices not provided for in groups B81C2201/0176 - B81C2201/0192
B81C2201/0198
for making a masking layer
B81C2201/03
Processes for manufacturing substrate-free structures
B81C2201/032
LIGA process
B81C2201/034
Moulding
B81C2201/036
Hot embossing
B81C2201/038
Processes for manufacturing substrate-free structures not provided for in B81C2201/034 - B81C2201/036
B81C2201/05
Temporary protection of devices or parts of the devices during manufacturing
B81C2201/053
Depositing a protective layers
B81C2201/056
Releasing structures at the end of the manufacturing process
B81C2201/11
Treatments for avoiding stiction of elastic or moving parts of MEMS
B81C2201/112
Depositing an anti-stiction or passivation coating
B81C2201/115
Roughening a surface
B81C2201/117
Using supercritical fluid
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