Manufacture or treatment of micro-structural devices or systems

Industry

  • CPC
  • B81C2201/00
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Sub Industries

B81C2201/01in or on a substrate B81C2201/0101Shaping material Structuring the bulk substrate or layers on the substrate Film patterning B81C2201/0102Surface micromachining B81C2201/0104Chemical-mechanical polishing [CMP] B81C2201/0105Sacrificial layer B81C2201/0107Sacrificial metal B81C2201/0108Sacrificial polymer, ashing of organics B81C2201/0109Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108 B81C2201/0111Bulk micromachining B81C2201/0112Bosch process B81C2201/0114Electrochemical etching, anodic oxidation B81C2201/0115Porous silicon B81C2201/0116Thermal treatment for structural rearrangement of substrate atoms B81C2201/0118Processes for the planarization of structures B81C2201/0119involving only addition of materials B81C2201/0121involving addition of material followed by removal of parts of said material B81C2201/0122Selective addition B81C2201/0123Selective removal B81C2201/0125Blanket removal B81C2201/0126Processes for the planarization of structures not provided for in B81C2201/0119 - B81C2201/0125 B81C2201/0128Processes for removing material B81C2201/0129Diamond turning B81C2201/013Etching B81C2201/0132Dry etching B81C2201/0133Wet etching B81C2201/0135Controlling etch progression B81C2201/0136by doping limited material regions B81C2201/0138Monitoring physical parameters in the etching chamber B81C2201/0139with the electric potential of an electrochemical etching B81C2201/014by depositing an etch stop layer B81C2201/0142Processes for controlling etch progression not provided for in B81C2201/0136 - B81C2201/014 B81C2201/0143Focussed beam B81C2201/0145Spark erosion B81C2201/0146Processes for removing material not provided for in B81C2201/0129 - B81C2201/0145 B81C2201/0147Film patterning B81C2201/0149Forming nanoscale microstructures using auto-arranging or self-assembling material B81C2201/015Imprinting B81C2201/0152Step and Flash imprinting, UV imprinting B81C2201/0153Imprinting techniques not provided for in B81C2201/0152 B81C2201/0154other processes for film patterning not provided for in B81C2201/0149 - B81C2201/015 B81C2201/0156Lithographic techniques B81C2201/0157Gray-scale mask technology B81C2201/0159Lithographic techniques not provided for in B81C2201/0157 B81C2201/016Passivation B81C2201/0161Controlling physical properties of the material B81C2201/0163Controlling internal stress of deposited layers B81C2201/0164by doping the layer B81C2201/0166by ion implantation B81C2201/0167by adding further layers of materials having complementary strains B81C2201/0169by post-annealing B81C2201/017Methods for controlling internal stress of deposited layers not provided for in B81C2201/0164 - B81C2201/0169 B81C2201/0171Doping materials B81C2201/0173Thermo-migration of impurities from a solid B81C2201/0174for making multi-layered devices, film deposition or growing B81C2201/0176Chemical vapour Deposition B81C2201/0177Epitaxy B81C2201/0178Oxidation B81C2201/018Plasma polymerization B81C2201/0181Physical Vapour Deposition [PVD] B81C2201/0183Selective deposition B81C2201/0184Digital lithography B81C2201/0185Printing B81C2201/0187Controlled formation of micro- or nanostructures using a template positioned on a substrate B81C2201/0188Selective deposition techniques not provided for in B81C2201/0184 - B81C2201/0187 B81C2201/019Bonding or gluing multiple substrate layers B81C2201/0191Transfer of a layer from a carrier wafer to a device wafer B81C2201/0192by cleaving the carrier wafer B81C2201/0194the layer being structured B81C2201/0195the layer being unstructured B81C2201/0197Processes for making multi-layered devices not provided for in groups B81C2201/0176 - B81C2201/0192 B81C2201/0198for making a masking layer B81C2201/03Processes for manufacturing substrate-free structures B81C2201/032LIGA process B81C2201/034Moulding B81C2201/036Hot embossing B81C2201/038Processes for manufacturing substrate-free structures not provided for in B81C2201/034 - B81C2201/036 B81C2201/05Temporary protection of devices or parts of the devices during manufacturing B81C2201/053Depositing a protective layers B81C2201/056Releasing structures at the end of the manufacturing process B81C2201/11Treatments for avoiding stiction of elastic or moving parts of MEMS B81C2201/112Depositing an anti-stiction or passivation coating B81C2201/115Roughening a surface B81C2201/117Using supercritical fluid