Claims
- 1. A semiconductor device comprising an IC chip, a tab onto which said IC chip is bonded through a junction portion formed of a solder, and leads each electrically bonded to said IC chip, said solder comprising balls of at least one kind selected from the group consisting of the Sn balls and In balls, and metal balls having a melting point higher than that of each of the Sn balls and the In balls.
- 2. A semiconductor device according to claim 1 wherein the metal balls comprise Cu balls.
- 3. A semiconductor device according to claim 1 wherein said solder further comprises plastic balls.
- 4. A semiconductor device according to claim 1, said solder further comprising Bi.
- 5. A semiconductor device according to claim 1, said metal balls being provided on a surface thereof with a coating of a metal selected from the group consisting of Sn and a Sn alloy.
- 6. A semiconductor device according to claim 1, said metal balls having a size ranging from about 5 μm to 10 μm.
- 7. A semiconductor device according to claim 1, said metal balls having a size ranging from about 20 μm to 40 μm.
- 8. A semiconductor device according to claim 1, a weight ratio of said Sn balls or In balls to said metal balls being in a range of about 0.6 to 1.4.
- 9. A semiconductor device according to claim 1, a weight ratio of said Sn balls or In balls to said metal balls being in a range of about 0.8 to 1.0.
- 10. A semiconductor device according to claim 1, substantially all of said Sn balls and In balls having a melting point lower than that of a Sn-Ag-Cu-based solder, said metal balls having a melting point higher than that of said Sn-Ag-Cu-based solder.
- 11. A semiconductor device according to claim 1, said metal balls in said junction portion formed of said solder being bonded to each other, said bonding of said metal balls being achieved by heating said solder at a melting point of a Sn-Ag-Cu-based solder.
- 12. A semiconductor device according to claim 2, said junction portion comprising said Cu balls, Sn with which spaces defined among said Cu balls are filled, and Cu6Sn5 formed by a reaction between said Cu balls and said Sn balls.
- 13. A semiconductor module comprising a semiconductor chip having pads and a rear face, an electronic component, and a substrate having pads on which substrate said semiconductor chip and said electronic part are mounted, each of said pads of said semiconductor chip being bonded to each of said pads of said substrate by a wire, said rear face of said semiconductor chip being mounted on the substrate through a first solder, said first solder comprising balls of at least one kind selected from the group consisting of Sn balls and In balls, and metal balls having a melting point higher than that of each of the Sn balls and the In balls.
- 14. A semiconductor module according to claim 13 wherein the metal balls comprise Cu balls.
- 15. A semiconductor module comprising a semiconductor chip having an electronic, and a substrate having pads on which substrate said semiconductor chip and said electronic part are mounted, each of said pads of said semiconductor chip being connected to each of said pads of said substrate, said semiconductor chip being mounted on the substrate through a junction portion, said junction portion comprising said Cu balls, Sn with which spaces defined among said Cu balls are filled, and Cu6Sn5 formed by a reaction between said Cu balls and said Sn balls.
- 16. A semiconductor module according to claim 13 wherein said electronic component is mounted on the substrate by said solder 0
- 17. A semiconductor module according to claim 13 wherein said electronic component is mounted on the substrate by a Sn-Sb solder.
- 18. A semiconductor module according to claim 13, said substrate being provided with through-holes filled with said first solder.
- 19. A semiconductor module according to claim 13, said substrate having second pads on an opposite side of a face on which the semiconductor chip is mounted, said second pads being adapted for said semiconductor module to be mounted on a second substrate by use of a second solder having a melting point higher than that of each of said Sn balls and In balls included in said first solder but lower than that of Cu balls included in said first solder.
- 20. A semiconductor module according to claim 19 wherein said second solder comprises an Sn-Ag-Cu-based solder.
- 21. A semiconductor module according to claim 13, said semiconductor module being resin-encapsulated.
- 22. A semiconductor module according to claim 13 wherein said semiconductor module comprises a RF module.
Priority Claims (2)
Number |
Date |
Country |
Kind |
2000-180719 |
Jun 2000 |
JP |
|
2000-396905 |
Dec 2000 |
JP |
|
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] The present application is a continuation application of U.S. application Ser. No. 09/880,773, filed Jun. 12, 2001, which claims priority from Japanese Patent Applications No. 2000-396905, filed Dec. 25, 2000, and No. 2000-180719, filed Jun. 12, 2000.
Continuations (1)
|
Number |
Date |
Country |
Parent |
09880733 |
Jun 2001 |
US |
Child |
10104826 |
Mar 2002 |
US |